CVD金刚石薄膜(111)与(100)取向生长的热力学分析

用非平衡热力学耦合模型计算了CVD金刚石薄膜生长过程中C2H2与CH3浓度之比[C2H2]/[CH3]随衬底温度和CH4浓度的变化关系,从理论上探讨了金刚石薄膜（111）面和（100）面取向生长与淀积条件的关系。在衬底温度和CH4浓度由低到高的变化过程中,[C2H2]/[CH3]逐渐升高,导致金刚石薄膜的形貌从（111）晶面转为（100）晶面。添加氧后C2H2与CH3浓度都将下降,但C2H2下降得更多,因而添加氧也使[C2H2]/[CH3]下降,从而有利于生长（111）晶面的金刚石薄膜。     

生长参数对Si_(1-x)Ge_x∶C合金薄膜中元素分布的影响

用化学气相淀积方法在Si(100)衬底上外延生长Ge组分渐变的Si1-xGex∶C合金薄膜。本文通过能量色散谱仪(EDS)和扫描电子显微镜(SEM)对合金薄膜的元素深度分布和表面形貌进行了表征,分析研究了外延层的生长温度、生长时间对Si1-xGex∶C合金薄膜性质的影响。结果表明,Si1-xGex∶C外延层生长温度和生长时间一定范围内的增加加强了岛与岛之间的合并,促进了衬底Si原子向表面扩散、表面Ge原子向衬底扩散,且生长温度比生长时间对Si、Ge原子互扩散的影响大。     

用PECVD制备高抗腐蚀性能SiNx薄膜的工艺研究

研究了一种可抗高温强碱溶液腐蚀的氮化硅薄膜的等离子增强化学气相淀积(PECVD)生长工艺。通过X射线光电子能谱(XPS)、椭圆偏振仪、湿法腐蚀等手段分析了所生长薄膜的元素含量、折射率、抗腐蚀特性等性质随淀积工艺条件的改变所产生的变化。制备出的氮化硅薄膜可在高温强碱溶液(70℃、33.3%KOH溶液)中支撑12h而无明显变化,并实现自支撑全镂空薄膜。     

低介电常数含氟氧化硅薄膜的研究

综述了近十年来低介电常数含氟氧化硅薄膜的研究状况,详细介绍了该薄膜在化学键结构、热性质、湿稳定性以及介电常数四个方面的特性,同时也简单介绍了薄膜的台阶覆盖度、填隙能力和漏电流特性,指出经硅薄膜是一种可有于集成电路中的极富应用前景的低介电常数材料。     

PECVD法生长的氧化锡薄膜的结构与性能研究

非化学计量的二氧化锡是一种 n 型半导体材料,具有良好的光电特性。本文用等离子增强化学气相沉积(PECVD)法生长 SnO_(2-x)薄膜,并进行了生长条件与其结构和性能的研究。结果表明:不同的淀积条件,可以获得从多晶到非晶态不同结构、化学稳定性良好、可见光透射率高、具有不同电导率的 SnO_(2-x)薄膜材料。     

生长温度对Si基Ge量子点VLP-CVD自组织生长的影响

对利用超低压化学气相淀积技术在Ｓｉ上自组织生长Ｇｅ量子点的特征进行了研究,发现生长温度对Ｇｅ量子点尺寸分布和密度的影响不同于分子束外延的结果,这种现象与ＶＬＰ－ＣＶＤ表面控制反应模式有关,实验表明,选择适当的生长温度可以在Ｓｉ上自组织生长具有窄尺寸分布和高密度和Ｇｅ量子点。     

低压化学气相淀积多晶硅薄膜膜厚的分子动力学模拟

从分子动力学的观点出发，引入了吸附因子，建立了势壁低压化学气相淀积多晶硅薄膜的膜厚模型，在此进行计算机模拟。模拟结果与Ｒ．Ｓ．Ｒｏｓｌｅｒ的实验结果相似，该模型从分子动力学的角度阐明了多晶硅薄膜的生长过程。     

线形微波等离子体CVD金刚石薄膜沉积技术

本文将讨论一种新型的微波等离子体CVD设备———线形微波等离子体CVD设备和其在金刚石薄膜制备技术中的应用。利用Langmuir探针方法对线形微波等离子体CVD设备产生的H2等离子体进行的等离子体参数测量表明,在工频半波激励的条件下,H2等离子体的电子温度和等离子体密度分别约为6 eV和1×1010/cm3。尝试利用线形微波等离子体CVD设备,在直径为0.5 mm的小尺寸硬质合金微型钻头上进行了金刚石涂层的沉积,获得了质量良好的金刚石涂层。由于线形微波等离子体CVD设备产生的等离子体面积具有容易扩大的优点,因而在需要使用较大面积等离子体的场合,它将有着很好的应用前景。     

Y_2O_3稳定的 ZrO_2薄膜材料的制备和电导性质的研究

以金属有机螯合物为源物质,采用低压等离子体化学气相淀积工艺(PCVD),成功地生长了 Y_2O_3稳定的 ZrO_3氧离子导体薄膜,对薄膜的化学组成、结构以及电导性能进行了研究。通过实验测量了等离子体条件下不同淀积参数对淀积速率的影响,探讨了各种参数对淀积过程的控制作用,进而为改进化学气相淀积工艺提供依据。     

Combinatorial initiated chemical vapor deposition (iCVD) for polymer thin film discovery

Initiated chemical vapor deposition (iCVD) is a technique used to synthesize polymer thin films and coatings from the vapor phase in situ on solid substrates via free-radical mechanisms. It is a solventless, low-temperature process capable of forming very thin conformal layers on complex architectures. By implementing a combinatorial approach that examines five initiation temperatures simultaneously, we have realized at least a five-fold increase in efficiency. The combinatorial films were compared to a series of blanket films deposited over the same conditions to ensure the combinatorial system provided the same information. Direct synthesis from the vapor phase allows for in situ control of film morphology, molecular weight and crosslinking, and the combinatorial system decreases the time required to find the relationship between these interrelated properties. Some coatings were tested for antimicrobial performance against E. coli and B. subtilis.     

定向碳纳米管的化学气相沉积制备法

报道了一种简便有效的合成定向碳纳米管 (CNTs)的化学气相沉积 (CVD)制备方法。以铁为催化剂 ,乙炔为碳源 ,采用单一反应炉 ,直接在石英基底上沉积催化剂颗粒薄膜 ,成功合成了定向性好、管径均匀的高质量大密度的碳纳米管     

等离子热丝化学气相沉积金刚石膜工艺参数研究

采用等离子热丝化学气相沉积(PHFCVD)装置进行了金刚石薄膜的制备实验。实验条件为：氢气流量为200sccm,甲烷流量为2～12sccm,基体温度为700～900℃,偏压为0～400V,真空室压力为4kPa。通过实验得出了甲烷含量、基体温度和偏压对沉积金刚石膜的影响,并运用扫描电子显微镜(SEM)、原子力显微镜(AFM)和X射线衍射(XRD)等测试方法对金刚石薄膜进行了观察分析。     

Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition

Lithium niobate films grown epitaxially on sapphire substrate were prepared using a thermal chemical vapor deposition method from the metalorganic compounds Li(C₁₁H₁₉O₂) and Nb(OC₂H₅)₅. The range of operating conditions for obtaining pure epitaxially grown LiNbO₃ without other oxides is within that for obtaining pure polycrystalline LiNbO₃ grown on silicon substrate. On analyzing the composition of the epitaxially grown LiNbO₃ film, the composition of the film was similar to that of the LiNbO₃ solid solution in the phase diagram of the Li-Nb composite oxide obtained for crystal growth from a molten solution.     

Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition (CVD) at relatively low temperatures. 3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates, and the nanowires are 20–80 nm in diameter and several μm in length, with a growth direction of [200]. The growth of the nanowires agrees well on vapor-liquid-solid (VLS) process and the film deposited on the substrates plays an important role in the formation of nanowires.     

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Homoepitaxial Si films have been deposited at a high rate of 200 nm s⁻¹ over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1–0.3 nm (1 × 1 μm²) and a Hall mobility of ∼240 cm² V⁻¹ s⁻¹. The results suggested that under the MPCVD the deposition precursors formed at the plasma edge could be small enough not to influence either epitaxial film structure or the film quality provided the substrate temperature is maintained above 500 °C.     

直流热阴极CVD金刚石薄膜生长特性研究

为了获得高质量的金刚石薄膜,采用直流热阴极化学气相沉积系统分别在不同基片温度和不同碳源气体含量条件下生长金刚石薄膜,利用Raman光谱、SEM和XRD检测方法研究了基片温度和碳源气体含量对金刚石薄膜生长特性的影响.结果表明,金刚石薄膜与基片Mo之间有Mo2C的过渡层存在;1000℃的温度能够促进金刚石晶体的生长,抑制其他碳杂质的形成,CH4体积分数为2%适于快速生长高纯度的金刚石薄膜.     

Crystallographic and electrical properties of platinum film grown by chemical vapor deposition using (methylcyclopentadienyl)trimethylplatinum

Platinum thin films grown by chemical vapor deposition (CVD) using a liquid precursor of (methylcyclopentadienyl)trimethylplatinum were characterized in terms of crystallographic nature, morphology, contaminants, and their influence on electrical properties. The lattice constant of these CVD films (3.91–3.92 Å) is smaller than that of bulk platinum. A high oxygen contaminant is observed, irrespective of the oxygen ratio during growth. A film grown at low oxygen content consists of randomly oriented micro-grains and contains a large amount of carbon contaminants. When the film is grown under oxidative conditions, it shows a 111-textured cylindrical morphology with increasing thickness. The electric resistivity is higher than the bulk standard, and it increases with decreasing oxygen ratio during the film growth. These results indicate that the carbon contaminant causes the randomly oriented micro-grains and contributes to the high residual resistivity.