基于同一外延层结构的10Gb/s单片集成光发射模块

利用同一外延层集成工艺方法制作了10Gb/s电吸收调制器/分布反馈(DFB)半导体激光器单片集成光发射模块.在器件中引入增益耦合机制以提高单模成品率,并采用感应耦合等离子体干法刻蚀技术以降低调制器电容.集成器件阈值电流为12mA,在-2V偏置时的消光比为15dB,器件的小信号调制带宽超过10GHz.在10Gb/s调制速率下经过35km单模光纤传输后,误码率为10-12时的功率代价小于1dB.     

同一外延层结构高速DFB激光器/EA调制器集成光源的研究

对利用同一外延层结构实现DFB激光器与EA调制器的集成机理进行了理论分析,指出该集成方法有可能获得激光器激射波长与调制器工作波长之间的良好匹配.在理论分析的基础上,研制出了基于同一外延层结构的高速集成光源,该器件具有良好的静态特性,并达到了约8GHz的小信号调制带宽.     

同一外延层结构高速DFB激光器/EA调制器集成光源的研究

对利用同一外延层结构实现ＤＦＢ激光器与ＥＡ调制器的集成机理进行了理论分析,指出该集成方法有可能获得激光器激射波长与调制器工作波长之间的良好匹配．在理论分析的基础上,研制出了基于同一外延层结构的高速集成光源,该器件具有良好的静态特性,并达到了约８ＧＨｚ的小信号调制带宽．     

隔离电阻对集成光源特性的影响分析

提出了一种分布反馈(DFB)激光器与电吸收(EA)调制器集成光源(EML)的等效电路模型。该模型考虑了由于隔离电阻不够大而导致的激光器与调制器之间的电耦合,通过对电路模型进行仿真可以看出,对于不同隔离电阻的EML,激光器的阈值电流、调制器的频率响应带宽、集成器件的小信号调制和脉冲调制等多方面特性均有明显不同。分析得到,EML的隔离电阻阻值只有达到10kQ量级,才能够忽略电泄漏对器件特性的影响。并指出EML在更高的偏置下,将对隔离电阻提出更高的要求。     

电吸收调制器和DFB激光器一种改进的双有源层堆积集成方法

提出了一种改进型的双有源层堆积方法制作单片集成电吸收调制的DFB激光器,报道了器件的制作过程和主要性能,初步结果为:阈值电流38mA,激光器在100mA下出光功率4.5mW左右,调制器消光比约9dB(从+0.5V到-3.0V).对比此前国外报道的具有常规双量子阱堆层结构的器件结果(出光功率仅1.5mW),我们制作的器件的出光功率有了明显的提高.     

基于SAG和QWI结合技术的电吸收调制器与可调谐DBR激光器的单片集成

报道了基于选择区域生长和量子阱混杂结合技术的电吸收调制器与可调谐DBR激光器的单片集成.集成器件显示出了良好的静态特性:阈值电流为37mA;100mA激光器增益区偏置电流下,直流输出功率为3.5mW;当使用单模光纤耦合(耦合效率15%),调制器偏压在0～-2V之间时,静态消光比大于20dB;波长调谐范围为4.4nm,覆盖了6个100GHz间隔的WDM信道.     

基于SAG和QWI结合技术的电吸收调制器与可调谐DBR激光器的单片集成

报道了基于选择区域生长和量子阱混杂结合技术的电吸收调制器与可调谐DBR激光器的单片集成.集成器件显示出了良好的静态特性:阈值电流为37mA;100mA激光器增益区偏置电流下,直流输出功率为3.5mW;当使用单模光纤耦合(耦合效率15%),调制器偏压在0～-2V之间时,静态消光比大于20dB;波长调谐范围为4.4nm,覆盖了6个100GHz间隔的WDM信道.     

脊型超宽带行波光调制器微波特性分析

针对光纤通信和光传感中常用的集成光学LiNbO3调制器,运用有限元法分析了脊型结构光调制器的微波静态和动态特性.数值计算表明,脊型结构光调制器比普通结构调制器有更大的调制带宽和较小的半波电压.在中心电极宽度为8 μm,高度为10 μm,脊高为3.3 μm时,调制带宽为78.6 GHz,半波电压为6.23 V,与相关文献中报道的测试结果符合较好.     

电吸收调制器和DFB激光器一种改进的双有源层堆积集成方法

提出了一种改进型的双有源层堆积方法制作单片集成电吸收调制的 DFB激光器 ,报道了器件的制作过程和主要性能 ,初步结果为 :阈值电流 38m A ,激光器在 10 0 m A下出光功率 4 .5 m W左右 ,调制器消光比约 9d B(从+0 .5 V到 - 3.0 V) .对比此前国外报道的具有常规双量子阱堆层结构的器件结果 (出光功率仅 1.5 m W) ,我们制作的器件的出光功率有了明显的提高 .     

基于直接调制和外调制的高速半导体激光光源

直接调制和外调制的半导体激光光源在现代光纤通信系统中有着重要的应用。首先介绍了应用于10 Gb/s接入网系统的直接调制AlGaInAs多量子阱DFB激光器。由于AlGaInAs量子阱的导带不连续性较大,因此基于该材料的半导体激光器具有良好的温度特性,其特征温度达到了88 K。同时,该直接调制激光器的3 dB小信号调制响应带宽超过15 GHz。随后介绍面向40 Gb/s干线传输系统的高速DFB激光器/EA调制器集成光源。该集成光源采用同一外延层集成方案,并采用Al2O3高速微波热沉进行了管芯级封装,在3 V反向偏压下获得大于13 dB的静态消光比,3 dB小信号调制带宽超过40 GHz。     

Butt-Joint Monolithically Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission

This paper reports on the design,fabrication，and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.     

10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at －2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 1e－12 after transmission through 35km single mode fiber.     

Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy

Monolithic integration of a 1.55-μm InGaAsP/InP distributed feedback (DFB) laser and an electroabsorption (EA) modulator was studied. The difference between the lasing photon energy and the bandgap energy of the modulator waveguide was designed to be 30-40 meV, taking into account the linewidth-enhancement factor and the zero-bias absorption loss. The integrated devices were grown by three-step vapor phase epitaxy (VPE). The CW threshold current at 20°C of the DFB laser part with a buried heterostructure was 30-60 mA and the breakdown voltage of the modulator part with a strip-loaded stripe geometry was 20-40 V, and these values indicated satisfactory crystal quality in the VPE epitaxial layers. The operating voltage of the modulator to give on:off ratios of 10:1 and 100:1 was 1.5- 4 V and 2.5-6.5 V, respectively, depending on the length in the range200-500 mum. A 3-dB bandwidth of about 2.5 GHz and a linewidth-enhancement factor of about 1.6 were obtained for the integrated modulator.     

5-Gb/s performance of integrated light source consisting ofλ/4-shifted DFB laser and EA modulator with SI InP BH structure

The fabrication process and characteristics, including 5-Gb/s transmission, of an integrated light source consisting of a λ/4-shifted distributed feedback laser and an electroabsorption (EA) modulator are discussed. By introducing a semi-insulating (SI) InP on the butt-joint region, both the large electrical isolation resistance (>10 MΩ) between the laser and the modulator and a high optical coupling efficiency (>80%) between them are achieved. A typical threshold current was 50-70 mA, and single-mode operation at 1.576 μm was maintained up to 5.5-mW output power. The modulation voltage to swing between 90% transmission and 10% transmission was 6.2-12 V, depending on the modulator length in the range 1000-400 μm. The 3-dB bandwidth is 7.7 GHz and a linewidth enhancement factor (α) of 0.9 is estimated from the sideband-to-carrier ratio of the spectra     

单片集成电吸收调制分布反馈激光器

提出一种选择区域外延双有源区叠层(SAG-DSAL)结构新技术,基于此技术设计研制了单片集成电吸收调制激光器(EML),SAG-DSAL-EML管芯的阈值电流为20mA,工作电流为100mA时的出光功率为10mw,由吸收调制器(EAM)加-3V偏压时的消光比为12dB,实现了简化制作工艺并提高器件性能的预期目的,有望用...     

40 Gbit/s electroabsorption modulated distributed feedback laser

A 40 Gbit/s multi-quantum well (MQW) electroabsorption modulator (EAM) with a lumped electrode monolithically integrated with a distributed feedback (DFB) laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 18 mA, over 40 dB side-mode suppression ratio at 1 550 nm and more than 30 dB extinction ratio when coupled into a single-mode fiber. By adopting deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene (BCB), the capacitance of the EAM is reduced down to 0.18 pF and over 33 GHz modulation bandwidth at a small signal has been demonstrated. Negative chirp operation is realized when the bias voltage is beyond 1.6 V.     

40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB dc extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.      

A Four‐Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non‐return to zero operation with 12 dB extinction ratio is obtained. A four‐channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.     

Monolithically integrated transverse-junction-stripe laser with anexternal waveguide in GaAs/AlGaAs

This device consists of a five-layer transverse-junction-stripe laser structure monolithically integrated with an external three-layer waveguide. The transverse p-n junction within the laser cavity permits the use of a vertical p-n junction in the external waveguide for future implementation of a modulator without disturbing the laser operation. As a result, this structure allows for flexibility in the design of the external waveguide/modulator without resorting to complicated regrowth procedures. Design curves for two different types of optical cavities are presented, and the reflectivity and transmission of the etched facet as a function of active layer thickness is modeled in detail using an excitation field approach. Finally, integrated laser/waveguide devices are fabricated based on this design and are compared to the theoretical curves. Most devices had threshold currents between 60 and 80 mA, while laser-to-waveguide transmission coefficients were as high as 38%