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1.
一个59mW 10位40MHz流水线A/D转换器   总被引:6,自引:2,他引:4  
设计了一个工作在3.0V的10位40MHz流水线A/D转换器,采用了时分复用运算放大器,低功耗的增益自举telescopic运放,低功耗动态比较器,器件尺寸逐级减小优化功耗.在40MHz的采样时钟,0.5MHz的输入信号的情况下测试,可获得8.1位有效精度,最大积分非线性为2.2LSB,最大微分非线性为0.85LSB,电路用0.25μm CMOS工艺实现,面积为1.24mm2,功耗仅为59mW,其中同时包括为A/D转换器提供基准电压和电流的一个带隙基准源和缓冲电路.  相似文献   

2.
提出了一种基于两步转换法(5 6)的高速高精度A/D转换器体系结构,其优点是可以大幅度降低芯片的功耗及面积。采用这种结构,设计了一个10位40 MHz的A/D转换器,并用0.6μm BiCMOS工艺实现。经过电路模拟仿真,在40 MHz转换速率,1 V输入信号(Vp-p),5 V电源电压时,信噪比(SNR)为63.3 dB,积分非线性(INL)和微分非线性(DNL)均小于10位转换器的±0.5 LSB,电源电流为85.4 mA。样品测试结果:SNR为55 dB,INL和DNL小于10位转换器的±1.75 LSB。  相似文献   

3.
提出一种基于运算跨导放大器共享技术的流水线操作A/D转换器体系结构,其优点是可以大幅度降低芯片的功耗和面积.采用这种结构设计了一个10位20MS/s转换速率的全差分流水线操作A/D转换器,并用CSMC 0.6μm工艺实现.测试结果表明,积分非线性为1.95LSB,微分非线性为1.75LSB;在6MHz/s采样频率下,对1.84MHz信号转换的无杂散动态范围为55.8dB;在5V工作电压、20MHz/s采样频率下,功耗为65mW.  相似文献   

4.
介绍了高速12位D/A转换器的电路设计,采用2μm等平面高速双极工艺,研制出数据更新率≥80MHz,线性误差≤3LSB,微分非线性≤3LSB的12位D/A转换器电路.  相似文献   

5.
介绍了高速12位D/A转换器的电路设计,采用2μm等平面高速双极工艺,研制出数据更新率≥80MHz,线性误差≤3LSB,微分非线性≤3LSB的12位D/A转换器电路.  相似文献   

6.
基于TSMC O.25μm CMOS工艺,采用分段开关电流结构,设计了一种基于2.5 V电源电压的14位400MS/s D/A转换器.该D/A转换器内置高精度带隙基准源、高速开关驱动电路和改进的Cascode单位电流源电路,以提高性能.D/A转换器的积分非线性(INL)和微分非线性(DNL)均小于0.5 LSB.在400 MHz采样频率、199.8 MHz输出信号频率时,其无杂散动态范围(SFDR)达到85.4 dB.  相似文献   

7.
介绍了高速12位D/A转换器的电路设计,采用2μm等平面高速双极工艺,研制出数据更新率≥80MHz,线性误差≤3LSB,微分非线性≤3LSB的12位D/A转换器电路.  相似文献   

8.
设计了应用于无线传感网络SoC解决方案的10位150 kS/s 逐次逼近A/D转换器.通过失调消除技术、合理的时序控制和版图设计,实现了电路的高精度和低功耗.设计的A/D转换器积分非线性和微分非线性分别为0.54 LSB和0.8 LSB;在150 kS/s采样率、14.3 kHz输入信号频率时,信噪比为60.8 dB,无杂散动态范围83.1 dB.设计实现基于TSMC 0.18 μm混合信号CMOS工艺,IP核面积为0.083 mm2,1.8 V工作电压下功耗为0.56 mW.  相似文献   

9.
设计并实现了一种12位40 MSPS流水线A/D转换器,并在0.18 μm HJTC CMOS工艺下流片.芯片工作电压为3.3 V,核心部分功耗为99.1 mW.为优化ADC功耗,采用多位/级的系统结构和套筒式运放结构,并采用逐级按比例缩小的设计方法进一步节省功耗.测试结果表明,A/D转换器的DNL小于0.46 LSB,INL小于0.86 LSB;采样率为40 MSPS时,输入19.1 MHz信号,SFDR超过80 dB,SNDR超过65 dB.  相似文献   

10.
提出了一种12位80MHz采样率具有梯度误差补偿的电流舵D/A转换器实现电路.12位DAC采用分段式结构,其中高8位采用单位电流源温度计码DAC结构,低4位采用二进制加权电流源DAC结构,该电路中所给出的层次式对称开关序列可以较好地补偿梯度误差.该D/A转换器采用台湾UMC 2层多晶硅、2层金属(2P2M)5V电源电压、0.5μm CMOS工艺生产制造,其积分非线性误差小于±0.9LSB,微分非线性误差小于±0.6LSB,芯片面积为1.27mm×0.96mm,当采样率为50MHz时,功耗为91.6mW.  相似文献   

11.
为了提高模数转换器的采样频率并降低其功耗,提出一种10 bit双通道流水线逐次逼近型(SAR)模数转换器(ADC)。提出的ADC包括两个高速通道,每个通道都采用流水线SAR结构以便低功率和减小面积。考虑到芯片面积、运行速度以及电路复杂性,提出的处于第二阶段的SAR ADC由1 bit FLASH ADC和6 bit SAR ADC组成。提出的ADC由45 nm CMOS工艺制作而成,面积为0.16 mm2。ADC的微分非线性和积分非线性分别小于0.36 最低有效位(LSB)和0.67 LSB。当电源为1.1 V时,ADC的最大运行频率为260 MS/s。运行频率为230 MS/s和260 MS/s的ADC的功率消耗分别为13.9 mW和17.8 mW。  相似文献   

12.
王韧  刘敬波  秦玲  陈勇  赵建民 《微电子学》2006,36(5):651-654,658
设计了一种3.3 V 9位50 MS/s CMOS流水线A/D转换器。该A/D转换器电路采用1.5位/级,8级流水线结构。相邻级交替工作,各级产生的数据汇总至数字纠错电路,经数字纠错电路输出9位数字值。仿真结果表明,A/D转换器的输出有效位数(ENOB)为8.712位,信噪比(SNR)为54.624 dB,INL小于1 LSB,DNL小于0.6 LSB,芯片面积0.37 mm2,功耗仅为82 mW。  相似文献   

13.
A monolithic 12-b 1 MHz, two-step flash analog-to-digital converter (ADC) has been implemented in standard 3-μm CMOS technology. A 12-b accurate reference bank incorporating a switched-capacitor integrator and a bank of 66 sample-and-hold amplifiers is discussed. Self-calibration techniques are used to correct for the converter offset, gain, and nonlinearity errors. The converter differential nonlinearity errors below 1/2 LSB and the S/(N+D) signal to noise is 70 dB for 100-kHz analog input  相似文献   

14.
A 14-b 12-MS/s CMOS pipeline ADC with over 100-dB SFDR   总被引:6,自引:0,他引:6  
A 1.8-V 14-b 12-MS/s pseudo-differential pipeline analog-to-digital converter (ADC) using a passive capacitor error-averaging technique and a nested CMOS gain-boosting technique is described. The converter is optimized for low-voltage low-power applications by applying an optimum stage-scaling algorithm at the architectural level and an opamp and comparator sharing technique at the circuit level. Prototyped in a 0.18-/spl mu/m 6M-1P CMOS process, this converter achieves a peak signal-to-noise plus distortion ratio (SNDR) of 75.5 dB and a 103-dB spurious-free dynamic range (SFDR) without trimming, calibration, or dithering. With a 1-MHz analog input, the maximum differential nonlinearity is 0.47 LSB and the maximum integral nonlinearity is 0.54 LSB. The large analog bandwidth of the front-end sample-and-hold circuit is achieved using bootstrapped thin-oxide transistors as switches, resulting in an SFDR of 97 dB when a 40-MHz full-scale input is digitized. The ADC occupies an active area of 10 mm/sup 2/ and dissipates 98 mW.  相似文献   

15.
莫太山  叶甜春  马成炎   《电子器件》2008,31(3):853-858
首先对用于CMOS低中频GPS接收机的模数转换器(ADC)进行了设计考虑.由ADC引入的信噪比降低与四个因素有关:中频带宽,采样率,ADC的比特数及ADC的最大阈值与噪声均方根比值.在设计考虑的基础上,采用TSMC 0.25tan CMOS单层多晶硅五层金属工艺实现了一个4 bit 16.368 MHz闪烁型模数转换器,并将重点放在了前置放大器和提出的新的比较器的设计和优化上.在时钟采样率16.368 MHz和输入信号频率4.092 MHz的条件下,转换器测试得到的信噪失真比为24.7 dB,无杂散动态范围为32.1 dB,积分非线性为 0.31/-0.46LSB,差分非线性为 0.66/-0.46LSB,功耗为3.5mW.ADC占用芯片面积0.07 mm2.  相似文献   

16.
A systematic design approach for low-power 10-bit, 100 MS/s pipelined analog-to-digital converter (ADC) is presented. At architectural level various per-stage-resolution are analyzed and most suitable architecture is selected for designing 10-bit, 100 MS/s pipeline ADC. At Circuit level a modified wide-bandwidth and high-gain two-stage operational transconductance amplifier (OTA) proposed in this work is used in track-and-hold amplifier (THA) and multiplying digital-to-analog converter (MDAC) sections, to reduce power consumption and thermal noise contribution by the ADC. The signal swing of the analog functional blocks (THA and MDAC sections) is allowed to exceed the supply voltage (1.8 V), which further increases the dynamic range of the circuit. Charge-sharing comparator is proposed in this work, which reduces the dynamic power dissipation and kickback noise of the comparator circuit. The bootstrap technique and bottom plate sampling technique is employed in THA and MDAC sections to reduce the nonlinearity error associated with the input signal resulting in a signal-to-noise-distortion ratio of 58.72/57.57 dB at 2 MHz/Nyquist frequency, respectively. The maximum differential nonlinearity (DNL) is +0.6167/−0.3151 LSB and the maximum integral nonlinearity (INL) is +0.4271/−0.4712 LSB. The dynamic range of the ADC is 58.72 dB for full-scale input signal at 2 MHz input frequency. The ADC consumes 52.6 mW at 100 MS/s sampling rate. The circuit is implemented using UMC-180 nm digital CMOS technology.  相似文献   

17.
An 8-bit 20-MS/s time-domain analog-to-digital data converter (ADC) using the zero-crossing-based circuit technique is presented. Compared with the conventional ADCs, signal processing is executed in both the voltage and time domains. Since no high-gain operational amplifier is needed, this time-domain ADC works well in a low supply voltage. The proposed ADC has been fabricated in a 0.18-mum CMOS process. Its power dissipation is 4.64 mW from a supply voltage of 1.8 V. This active area occupies 1.2 times 0.7 mm2. The measured signal-to-noise-distortion ratio achieves 44.2 dB at an input frequency of 10 MHz. The integral nonlinearity is less than plusmn1.07 LSB, and the differential nonlinearity is less than plusmn0.72 LSB. This time-domain ADC achieves the effective bits of 7.1 for a Nyquist input frequency at 20 MS/s.  相似文献   

18.
This paper describes an 8-bit 125 Mhzlow-powerCMOS fully-foldinganalog-to-digital converter(ADC).A novel mixed-averaging distributed T/H circuit is proposed to improve the accuracy. Folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchronization block to reduce the number of comparators for low power. This ADC is implemented in 0.5μm CMOS technology and occupies a die area of 2 × 1.5 mm~2. The measured differential nonlinearity and integral nonlinearity are 0.6 LSB/-0.8 LSB and 0.9 LSB/-1.2 LSB, respectively. The ADC exhibits 44.3 dB of signal-to-noise plus distortion ratio and 53.5 dB of spurious-free dynamic range for 1 MHz input sine-wave. The power dissipation is 138 mW at a sampling rate of 125 MHz at a 5 V supply.  相似文献   

19.
An 8-bit 80-Msample/s pipelined analog-to-digital converter (ADC) uses monolithic background calibration to reduce the nonlinearity caused by interstage gain errors. Test results show that the ADC achieves a peak signal-to-noise-and-distortion ratio of 43.8 dB, a peak integral nonlinearity of 0.51 least significant bit (LSB), and a peak differential nonlinearity of 0.32 LSB with active background calibration. It dissipates 268 mW from a 3 V supply and occupies 10.3 mm 2 in a single-poly 0.5 μm CMOS technology  相似文献   

20.
This paper presents a differential successive approximation register analog-to-digital converter(SAR ADC) with a novel time-domain comparator design for wireless sensor networks.The prototype chip has been implemented in the UMC 0.18-μm 1P6M CMOS process.The proposed ADC achieves a peak ENOB of 7.98 at an input frequency of 39.7 kHz and sampling rate of 180 kHz.With the Nyquist input frequency,68.49-dB SFDR,7.97-ENOB is achieved.A simple quadrate layout is adopted to ease the routing complexity of the co...  相似文献   

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