高灵敏度CMOS光电集成接收机设计

设计了一个由调节型级联跨阻抗放大器(TIA)和双光电二极管(DPD)构成的CMOS光电集成(OEIC)接收机.具体分析了这个光电集成接收机的噪声和灵敏度及其相互关系.接收机中的噪声主要是电路中电阻的热噪声和MOS器件的闪烁噪声.提出了优化接收机灵敏度的方法.通过低成本的CSMC 0.6μm CMOS工艺流片并对芯片进行了测试.从测试眼图可知,该CMOS光电集成接收机可工作在1.25GB/s的传输速率下,灵敏度为-12dBm.     

高速12路并行CMOS单片光电集成接收机设计与实现

设计并实现了一个高速12路并行CMOS单片光电集成接收机.其每一路都包括一个光探测器、一个跨阻放大器以及后续放大电路.双光电二极管(DPD)结构可以提高接收机速度,但同时降低了响应度.在跨阻放大器电路中采用有源电感来展宽-3dB带宽.通过无锡上华(CSMC)0.6μm CMOS工艺流片并对芯片进行了测试.测试结果显示该接收机单路传输比特率可达0.8～1.4 Gb/s,总的12路可传输15Gb/s数据.     

高灵敏度CMOS光电集成接收机设计

设计了一个由调节型级联跨阻抗放大器(TIA)和双光电二极管(DPD)构成的CMOS光电集成(OEIC)接收机.具体分析了这个光电集成接收机的噪声和灵敏度及其相互关系.接收机中的噪声主要是电路中电阻的热噪声和MOS器件的闪烁噪声.提出了优化接收机灵敏度的方法.通过低成本的CSMC 0.6μm CMOS工艺流片并对芯片进行了测试.从测试眼图可知,该CMOS光电集成接收机可工作在1.25GB/s的传输速率下,灵敏度为-12dBm.     

高速12路并行CMOS单片光电集成接收机设计与实现

设计并实现了一个高速12路并行CMOS单片光电集成接收机.其每一路都包括一个光探测器、一个跨阻放大器以及后续放大电路.双光电二极管(DPD)结构可以提高接收机速度,但同时降低了响应度.在跨阻放大器电路中采用有源电感来展宽-3dB带宽.通过无锡上华(CSMC)0.6μm CMOS工艺流片并对芯片进行了测试.测试结果显示该接收机单路传输比特率可达0.8～1.4 Gb/s,总的12路可传输15Gb/s数据.     

1Gb/s CMOS调节型共源共栅光接收机

基于特许0.35μm EEPROM CMOS标准工艺设计了一种单片集成光接收机芯片,集成了双光电探测器(DPD)、调节型共源共栅(RGC)跨阻前置放大器(TIA)、三级限幅放大器(LA,limiting amplifier)和输出电路,其中RGCTIA能够隔离光电二极管的电容影响,并可以有效地扩展光接收机的带宽。测试结果表明,光接收机的3dB带宽为821MHz,在误码率为10-9、灵敏度为-11dBm的条件下,光接收机的数据传输速率达到了1Gb/s;在3.3V电压下工作,芯片的功耗为54mW。     

一种与标准CMOS工艺兼容的光电集成接收机设计与实现

设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机,并采用0.6μm标准CMOS工艺流片. 测试结果表明,该光电集成接收机的性能已接近实用要求. 探测器的频率响应带宽为1.11GHz,光电集成接收机的3dB带宽为733MHz;在误码率为10-12条件下,对波长为850nm的输入光信号,灵敏度达到-9dBm.     

光收发器中光电集成接收芯片的实现

针对应用于850nm光通信中的10/100Mbit/s收发器,提出采用0.5μm标准CMOS工艺对其光接收芯片实现Si基单片集成。整体芯片面积为0.6mm2,共集成了一个双光电二极管的(DPD)光电探测器和一个跨阻前置放大电路,功耗为100mW,并给出了具体的测试性能结果。结果表明,在850nm光照下,光接收芯片带宽达到53MHz,工作速率为72Mbit/s。重点介绍了DPD光电探测器的原理和结构,并给出了相应的制造过程和电路等效模型,对整个光接收芯片进行了多种实用性测试,可以满足系统的性能要求。     

一种与标准CMOS工艺兼容的光电集成接收机设计与实现

设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机,并采用0.6μm标准CMOS工艺流片. 测试结果表明,该光电集成接收机的性能已接近实用要求. 探测器的频率响应带宽为1.11GHz,光电集成接收机的3dB带宽为733MHz;在误码率为10-12条件下,对波长为850nm的输入光信号,灵敏度达到-9dBm.     

可应用于光互连的新型高带宽、高灵敏度差分光接收机的概念提出与设计

提出了一种可应用于高速光通信和光互连的新型高带宽、高灵敏度差分光接收机.其中,高带宽和高灵敏度分别通过输入负载平衡的全差分跨阻前置放大器和将入射光信号转换成一对差分光生电流信号的两个光电探测器来实现.与常用光接收机相比,这种新型光接收机无任何附加成本.设计了一种相应的、与0.35μm标准CMOS工艺完全兼容的光电集成接收机.其中,光电探测器采用面积为60μm×30μm、结电容为1.483pF的插指型p+/n-well/p-substrate光电二极管.仿真结果表明:该光电集成接收机的带宽为1.37GHz;跨阻增益为81.9dBΩ;面积为0.198mm2;数据传输率至少可达2Gb/s;对于215-1位的输入伪随机码序列(PRBS),在误码率为10-12条件下,灵敏度至少可达-13dBm.     

可应用于光互连的新型高带宽、高灵敏度差分光接收机的概念提出与设计

提出了一种可应用于高速光通信和光互连的新型高带宽、高灵敏度差分光接收机.其中,高带宽和高灵敏度分别通过输入负载平衡的全差分跨阻前置放大器和将入射光信号转换成一对差分光生电流信号的两个光电探测器来实现.与常用光接收机相比,这种新型光接收机无任何附加成本.设计了一种相应的、与0.35μm标准CMOS工艺完全兼容的光电集成接收机.其中,光电探测器采用面积为60μm×30μm、结电容为1.483pF的插指型p /n-well/p-substrate光电二极管.仿真结果表明:该光电集成接收机的带宽为1.37GHz;跨阻增益为81.9dBΩ;面积为0.198mm2;数据传输率至少可达2Gb/s;对于215-1位的输入伪随机码序列(PRBS),在误码率为10-12条件下,灵敏度至少可达-13dBm.     

11 GHz ultrawide-bandwidth monolithic photoreceiver using InGaAspin PD and InAlAs/InGaAs HEMTs

A very-wide-bandwidth long-wavelength monolithically integrated photoreceiver is presented which comprises an InGaAs pin PD and a transimpedance amplifier. The receiver uses epilayers grown by one-step MOVPE. The InGaAs channel high-electron-mobility field effect transistor (HEMT) employs an Si planar-doped carrier supplying layer to obtain larger transconductance and uniform threshold voltage. The 0.5 μm gate length is used for HEMTs to enhance the speed of operation. This receiver shows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s NRZ signal. This is the first demonstration of a long-wavelength monolithic photoreceiver receiving a 15 Gbit/s light signal     

A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<>     

Monolithically integrated multichannel SiGe/Si p-i-n-HBTphotoreceiver arrays

A low-power, short-wavelength eight-channel monolithically integrated photoreceiver array, based on SiGe/Si heterojunction bipolar transistors, is demonstrated. The photoreceiver consists of a photodiode, three-stage transimpedance amplifier, and passive elements for feedback, biasing and impedance matching. The photodiode and transistors are grown by molecular beam epitaxy in a single step. The p-i-n photodiode exhibits a responsivity of 0.3A/W and a bandwidth of 0.8 GHz at λ=0.88 μm. The three-stage transimpedance amplifier demonstrates a transimpedance gain of 43 dBΩ and a -3 dB bandwidth of 5.5 GHz. A single channel monolithically integrated photoreceiver consumes a power of 6 mW and demonstrates an optical bandwidth of 0.8 GHz. Eight-channel photoreceiver arrays are designed for massively parallel applications where low power dissipation and low crosstalk are required. The array is on a 250-μm pitch and can be easily scaled to much higher density. Large signal operation up to 1 Gb/s is achieved with crosstalk less than -26 dB. A scheme for time-to-space division multiplexing is proposed and demonstrated with the photoreceiver array     

A monolithically integrated InGaAs/InP photoreceiver operating witha single 5-V power supply

A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase the yield of the photoreceivers. A circuit transimpedance of 965 Ω and a 3-dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved     

27-GHz bandwidth high-speed monolithic integrated optoelectronicphotoreceiver consisting of a waveguide fed photodiode and anInAlAs/InGaAs-HFET traveling wave amplifier

A monolithic integrated photoreceiver for 1.55-μm wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-μm gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dBΩ. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10^-9) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10^-9) [including erbium doped fiber amplifiers (EDFA)]     

InP-InGaAs single HBT technology for photoreceiver OEIC's at 40Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ω/380 Ω and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value     

Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Ω, a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth     

A 3 GHz transimpedance OEIC receiver for 1.3-1.55 μm fiber-opticsystems

A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55-μm-wavelength OEIC receivers