2.5Gb/s单片时钟恢复数据判决与1∶4分接集成电路的设计(英文)

用0.25μmCMOS工艺实现一个复杂的高集成度的2.5Gb/s单片时钟数据恢复与1∶4分接集成电路.对应于2.5Gb/s的PRBS数据(231-1),恢复并分频后的625MHz时钟的相位噪声为-106.26dBc/Hz@100kHz,同时2.5Gb/s的PRBS数据分接出4路625Mb/s数据.芯片面积仅为0.97mm×0.97mm,电源电压3.3V时核心功耗为550mW.     

2.5 Gbit/s光接收机电路的全集成

提供了应用于光纤传输系统同步数字体系(SDH)STM-16级别(2.5 Gb it/s)的全集成光接收机电路的设计。采用TSMC 0.25μm CMOS工艺进行流片。芯片对应于5μA的2.5 Gb it/s的PRBS输入码流(231-1),可恢复出一路1.25 GHz时钟,同时将2.5 Gb it/s的PRBS数据分接成4路625 Mb it/s数据,输出的时钟与数据均为标准的400 mV的PCML电平。芯片面积为1.04 mm×0.97 mm,电源电压为3.3 V时功耗为850 mW。     

2.5Gb/s Monolithic IC of Clock Recovery,Data Decision，and 1∶4 Demultiplexer

A high integrated monolithic IC，with functions of clock recovery,data decision,and 1∶4 demultiplexer，is implemented in 0.25μm CMOS process for 2.5Gb/s fiberoptic communications.The recovered and frequency divided 625MHz clock has a phase noise of －106.26dBc/Hz at 100kHz offset in response to a 2.5Gb/s PRBS input data (2~31-1).The 2.5Gb/s PRBS data are demultiplexed to four 625Mb/s data.The 0.97mm×0.97mm IC consumes 550mW under a single 3.3V power supply (not including output buffers).     

10Gb/s CMOS时钟和数据恢复电路的设计

介绍了利用0.18μmCMOS工艺实现了应用于光纤传输系统SDHSTM-64级别的时钟和数据恢复电路。采用了电荷泵锁相环(CPPLL)结构,CPPLL中的鉴相器能够鉴测相位产生超前滞后逻辑,采样数据具有1∶2分接的功能。振荡器采用全集成LC压控振荡器,鉴相器采用半速率的结构。对应于10Gb/s的PRBS数据(231-1),恢复出的5GHz时钟的相位噪声为-112dBc/Hz@1MHz,同时10Gb/s的PRBS数据分接出两路5Gb/s数据。芯片面积仅为1.00mm×0.8mm,电源电压1.8V时功耗为158mW。     

2.5Gb/s/ch 0.18μm CMOS数据恢复电路

设计了一个应用于SFI-5接口的2.5Gb/s/ch数据恢复电路.应用一个延迟锁相环,将数据的眼图中心调整为与参考时钟的上升沿对准,因而同步了并行恢复数据,并降低了误码率.采用TSMC标准的0.18μm CMOS工艺制作了一个单通道的2.5Gb/s/ch数据恢复电路,其面积为0.46mm2.输入231-1伪随机序列,恢复出2.5Gb/s数据的均方抖动为3.3ps.在误码率为10-12的条件下,电路的灵敏度小于20mV.     

12Gb/s 0.25μm CMOS低功耗1:4分接器

实现了一种能运用于光传输系统SONET OC-192的低功耗单级分接器,其工作速率高达12Gb/s.该电路采用了特征栅长为0.25μm的TSMC混和信号CMOS工艺.所有的电路都采用了源极耦合逻辑,在抑制共模噪声的同时达到尽可能高的工作速率.该分接器具有利用四分之一速率的正交时钟来实现单级分接的特征,减少了分接器器件,降低了功耗.通过在晶圆测试,该芯片在输入12Gb/s长度为231-1伪随机码流时,分接功能正确.芯片面积为0.9mm×0.9mm,在2.5V单电源供电的情况下的典型功耗是210mW.     

12Gb/s 0.25μm CMOS低功耗1:4分接器

实现了一种能运用于光传输系统SONET OC-192的低功耗单级分接器,其工作速率高达12Gb/s.该电路采用了特征栅长为0.25μm的TSMC混和信号CMOS工艺.所有的电路都采用了源极耦合逻辑,在抑制共模噪声的同时达到尽可能高的工作速率.该分接器具有利用四分之一速率的正交时钟来实现单级分接的特征,减少了分接器器件,降低了功耗.通过在晶圆测试,该芯片在输入12Gb/s长度为231-1伪随机码流时,分接功能正确.芯片面积为0.9mm×0.9mm,在2.5V单电源供电的情况下的典型功耗是210mW.     

1212Gb/s 0.25μm CMOS低功耗1∶4分接器(英文)

实现了一种能运用于光传输系统SONET OC-192的低功耗单级分接器,其工作速率高达12Gb/s.该电路采用了特征栅长为0.25μm的TSMC混和信号CMOS工艺.所有的电路都采用了源极耦合逻辑,在抑制共模噪声的同时达到尽可能高的工作速率.该分接器具有利用四分之一速率的正交时钟来实现单级分接的特征,减少了分接器器件,降低了功耗.通过在晶圆测试,该芯片在输入12Gb/s长度为231-1伪随机码流时,分接功能正确.芯片面积为0.9mm×0.9mm,在2.5V单电源供电的情况下的典型功耗是210mW.     

利用太赫兹光非对称解复用器对归零伪随机码占空比压缩的全光速率倍增

利用太赫兹非对称解复用器(TOAD)对伪随机比特序列(PRBS)归零(RZ)码占空比压缩后经多路延迟叠加来实现速率倍增。实验上将周期为2~7-1、速率为2.5 Gb/s的伪随机RZ码占空比由50%压缩至12.5%后经4路精确延时叠加,保持码型不变,速率提升4倍至10 Gb/s,相对于原伪随机码,保证误码率10~(-9)的功率代价为2 dB。     

2.5Gbps/ch两通道并行时钟数据恢复电路

采用TSMC公司标准的0.18μm CMOS工艺,结合锁相环和延迟锁相环技术,设计并制作了一个全集成的2.5Gbps/ch并行时钟数据恢复电路.与传统并行数据恢复电路相比,该电路不需要本地参考时钟,并且恢复出的并行数据是位同步的.输入2路并行的231-1 PRBS数据,恢复出的2.5GHz时钟的均方抖动值为2.6ps,恢复出的两路2.5Gb/s数据的均方抖动值分别为3.3ps和3.4ps.     

2.5-Gb/s low-jitter low-power monolithically integrated optical receiver

A high-scale integrated optical receiver including a preamplifier, a limiting amplifier, a clock and data recovery (CDR) block, and a 1:4 demultiplexer (DEMUX) has been realized in a 0.25???m CMOS technology. Using the loop parameter optimization method and the low-jitter circuit design technique, the rms and peak-to-peak jitter of the recovered 625-MHz clock are 9.4 and 46.3?ps, respectively, which meet the jitter specifications stipulated in ITU-T recommendation G.958. The recovered and frequency divided 625?MHz clock has a phase noise of ?83.8 dBc/Hz at 20?kHz offset in response to 2.5?Gb/s PRBS input data (2²³?C1), and the 2.5?Gb/s PRBS data has been demultiplexed into four 625?Mb/s data. The power dissipation is only 0.3?W under a single 3.3 V supply (excluding output buffers).     

43 Gb/s decision circuits in InP DHBT technology

Packaged master-slave D-flip-flops designed in InP DHBT technology with 150 GHz f/sub t/ and 180 GHz f/sub max/ are presented. Measurement results using a 43.2 Gb/s nonreturn to zero (NRZ), pseudo random binary sequence (PRBS) data (generated from 4 channels of 10.8 Gb/s, 2/sup 31/-1, PRBS data) and a 43.2 GHz clock, show a clock phase margin of 190/spl deg/. 2:1 Static frequency dividers designed using the D-flip-flops have been tested up to 50 GHz and show normal operation. These circuits are key building blocks in numerous front-end circuits used for 40 Gb/s optical communication systems.     

A 10-Gb/s silicon bipolar IC for PRBS testing

A 10 Gb/s silicon bipolar IC for pseudorandom binary sequence (PRBS) testing was fabricated and tested. The IC features PRBS generation of the sequences of length 2¹⁵-1 and 2²³-1 b up to 10 Gb/s according to CCITT recommendations. Furthermore, the IC is capable of analyzing PRB sequences of the same length and generation polynomials so that a full test of components is possible. In addition, a new PRBS test word synchronization can be provided between two chips for external multiplexing of the sequences up to 40 Gb/s. The IC can be connected to a standard PC, so evaluation of the error test data can be performed in a flexible way. The IC was fabricated with the HP25 process of Hewlett Packard company, the chip size is 32 mm², and it consumes 6.2 W at the nominal supply voltage of -5 V     

A 10-Gb/s CDR/DEMUX with LC delay line VCO in 0.18-/spl mu/m CMOS

A monolithic 10-Gb/s clock/data recovery and 1:2 demultiplexer are implemented in 0.18-/spl mu/m CMOS. The quadrature LC delay line oscillator has a tuning range of 125 MHz and a 60-MHz/V sensitivity to power supply pulling. The circuit meets SONET OC-192 jitter specifications with a measured jitter of 8 ps p-p when performing error-free recovery of PRBS 2/sup 31/-1 data. Clock and data recovery (CDR) is achieved at 10 Gb/s, demonstrating the feasibility of a half-rate early/late PD (with tri-state) based CDR on 0.18-/spl mu/m CMOS. The 1.9/spl times/1.5 mm/sup 2/ IC (not including output buffers) consumes 285 mW from a 1.8-V supply.     

Design and Implementation of Open‐Loop Clock Recovery Circuit for 39.8 Gb/s and 42.8 Gb/s Dual‐Mode Operation

This paper proposes an open‐loop clock recovery circuit (CRC) using two high‐Q dielectric resonator (DR) filters for 39.8 Gb/s and 42.8 Gb/s dual‐mode operation. The DR filters are fabricated to obtain high Q‐values of approximately 950 at the 40 GHz band and to suppress spurious resonant modes up to 45 GHz. The CRC is implemented in a compact module by integrating the DR filters with other circuits in the CRC. The peak‐to‐peak and RMS jitter values of the clock signals recovered from 39.8 Gb/s and 42.8 Gb/s pseudo‐random binary sequence (PRBS) data with a word length of 2³¹?1 are less than 2.0 ps and 0.3 ps, respectively. The peak‐to‐peak amplitudes of the recovered clocks are quite stable and within the range of 2.5 V to 2.7 V, even when the input data signals vary from 150 mV to 500 mV. Error‐free operation of the 40 Gb/s‐class optical receiver with the dual‐mode CRC is confirmed at both 39.8 Gb/s and 42.8 Gb/s data rates.     

100-Gb/s 2/sup 7/-1 and 54-Gb/s 2/sup 11/-1 PRBS generators in SiGe bipolar technology

This paper presents two monolithic pseudorandom bit sequence (PRBS) generators. One circuit uses a seven-stage shift register operating with a half-rate clock and provides output signals up to 100 Gb/s. The second circuit contains an eleven-stage shift register operating with a full-rate clock up to 54 Gb/s. Both PRBS generators provide a wide range of data rates down to below 1 Gb/s simply by changing the frequency of the external clock signal without the need of any further adjustments. The integrated circuits provide a trigger output which can be switched between eye and pattern display. Furthermore, they contain additional circuitry to guarantee automatic start after power-on. The circuits are manufactured in a 200-GHz f/sub T/ SiGe bipolar technology. They each have a chip size of 900/spl times/700 /spl mu/m/sup 2/ and consume 1.5 and 1.9 W, respectively.     

2.5 Gb／s 16：1 MUX IC Design with CMOS

A low--power and high--speed 16.-1 MUX IC designed for optical fiber communication based on TSMC 0.25μm CMOS technology is presented. A tree—type architecture was utilized. The output data bit rate is 2.5 Gb/s at input clock rate of 1.25 GHz. The simulation results show that the output signal has peak—to—peak amplitude of 400 mV, the power dissipation is less than 200 mW and the power dissipation of core circuit is less than 20 mW at the 2.5 Gb/s standard bit rate and supply voltage of 2.5 V. The chip area is 1.8mm^2.     

A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

A 33.6–33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2 $^{11} -$1 PRBS. The measured bit error rate is less than $10^{-8}$ for a 33.72 Gb/s, 2$^{7} -$1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.