室温连续激射1.59μm GaInNAsSb量子阱激光器

研究了原位和非原位退火对分子束外延生长的GaInNAsSb/GaNAs/GaAs量子阱激光器的作用.通过快速热退火量子阱质量得到很大提高,这一方法还很少被应用于激光器的制作,特别是波长在1.55μm波段的激光器.生长量子阱时采用的生长速率、Sb诱导等,将量子阱激光器发光波长拓展到1.59μm,并制作了脊型波导FP腔GaInNAsSb单阱激光器,成功实现了室温连续激射,激射波长达到1.59μm,阈值电流为2.6kA/cm2.     

室温连续激射1.59μm GaInNAsSb量子阱激光器

研究了原位和非原位退火对分子束外延生长的GaInNAsSb/GaNAs/GaAs量子阱激光器的作用.通过快速热退火量子阱质量得到很大提高,这一方法还很少被应用于激光器的制作,特别是波长在1.55μm波段的激光器.生长量子阱时采用的生长速率、Sb诱导等,将量子阱激光器发光波长拓展到1.59μm,并制作了脊型波导FP腔GaInNAsSb单阱激光器,成功实现了室温连续激射,激射波长达到1.59μm,阈值电流为2.6kA/cm2.     

高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器

成功制备出2.6μm GaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到更好的光学质量, 将量子阱的生长温度优化至500℃, 并将量子阱的压应变调节为1.3%.制备了脊宽100 μm 、腔长1.5 mm的激光单管器件.在未镀膜下该激光器实现了最大328 mW室温连续工作, 阈值电流密度为402 A/cm2, 在脉冲工作模式下, 功率达到700 mW.     

无制冷高速直调1.5 μm AlGaInAs-InP DFB激光器

利用AlGaInAs-InP应变多量子阱(MQW)材料导带偏移量大的特点,制作了基于AlGaInAs-InP材料的无制冷脊波导分布反馈式(DFB)激光器.为提高器件调制速度,制作了2 μm宽的脊波导结构,并在脊波导两侧填充1.5 μm厚的SiO2层,从而有效降低器件寄生电容.室温条件下,DFB激光器典型阈值为15 mA,特征温度达88 K,边模抑制比大于50 dB,3 dB小信号调制响应带宽超过15 GHz.     

高效率976nm激光器材料

使用自洽二维数字模拟软件优化半导体激光器的外延结构,对GaInAs/AlGaAs分别限制压应变单量子阱结构进行了模拟,研究了包层和波导层的Al组分对工作电压的影响。根据模拟结果,采用金属有机化学淀积(MOCVD)技术,外延生长了单量子阱976nm激光器材料。利用该材料制作成2mm腔长的连续(CW)单管器件,采用C-mount载体标准封装,并进行了测试。测试结果表明,模拟与实验的结论一致,降低优化包层和波导层的Al组分可以减小工作电压,从而提高了976nm半导体激光器的转换效率。室温下,当工作电流为500A/cm2时,包层和波导层Al组分分别为0.35和0.15时,激光器的工作电压降低为1.63V,使得电光转换效率达到67%。     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

InGaAs／InP分别限制量子阱激光器的阱数优化设计和实验制备

根据对ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构的注入效率的分析和利用Ｘ射线衍射结ＩｎＧａＡｓＰ－ＩｎＰ２０个周期的多量子阱结构异质界面的研究，设计，制备了４个阱的ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构，利用质子轰击制得条形激光器，阈值电流为１００ｍＡ，直流室温连续工作，单面输出外微分子效率为３６％。     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

980nm大功率半导体激光器的MOCVD外延生长条件优化

为了对980 nm大功率半导体激光器的波导层和有源层外延材料进行快速表征,设计了相应的双异质结(DH)结构和量子阱(QW)结构,并在不同条件下进行了MOCVD外延生长,通过室温荧光谱测试分析,得到Alo.1Ga0.9As波导层的最佳生长温度为675℃,InGaAs QW的最佳长温度为575℃.为了兼顾波导层需高温生长和QW层需低温生长的需求,提出在InGaAsQW附近引入Alo.1Gao.9As薄间隔层的变温停顿生长方法,通过优化间隔层的厚度,InGaAs QW在室温下的PL谱的峰值半高宽只有23 meV.基于优化的外延工艺参数,进行了980 nm大功率半导体激光器的外延生长,并制备了腔长4 mm、条宽95 μm的脊形器件.结果显示,在没有采取任何主动散热情况下,器件在30A注入电流下仍未出现腔面灾变损伤,输出功率达到23.6W.     

InP基长波长光发射OEIC材料的MOCVD生长

为了生长制作器件所需的外延片,采用低压金属有机物化学气相沉积方法在半绝缘InP衬底上生长了InP/InGaAs异质结双极晶体管(HBT)结构、1.55μm多量子阱激光二极管以及两者集成的光发射光电集成电路材料结构.激光器结构的生长温度为655℃,有源区为5个周期的InGaAsP/ InGaAsP多量子阱(阱区λ＝1.6μm,垒区λ＝1.28μm);HBT结构则采用550℃低温生长,其中基区采用Zn掺杂,掺杂浓度约为2×1019cm-3.对生长的各种结构分别进行了X射线双晶衍射,光致发光谱和二次离子质谱仪的测试,结果表明所生长的材料结构已满足制作器件的要求.     

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the fullwidth half maximum of 180″ and 185″ for (0002) symmetric reflection and (10-12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.     

Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

Two kinds of continuous-wave GaN-based ultraviolet laser diodes (LDs) operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metalorganic chemical vapor deposition,with a 10×600 μm2 ridge waveguide structure.The electrical and optical characteristics of the ultraviolet LDs are investigated under direct-current injection at room temperature. The stimulated emission peak wavelength of first LD is 392.9 nm,the threshold current density and voltage is 1.5 kA/cm² and 5.0 V,respectively.The output light power is 80 mW under the 4.0 kA/cm² injection current density. The stimulated emission peak wavelength of second LD is 381.9 nm,the threshold current density the voltage is 2.8 kA/cm² and 5.5 V,respectively.The output light power is 14 mW under a 4.0 kA/cm² injection current density.     

Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h

GaN-based continuous-wave operated blue-violet laser diodes (LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm² ridge waveguide structure. The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature (25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively. In addition, the threshold current density and voltage are as small as 1.46 kA/cm² and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.     

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200 μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.     

1.53 /spl mu/m GaInNAsSb laser diodes grown on GaAs(100)

GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm/sup -2/ per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.     

1.3μm GaAs基GaInNAs量子阱生长与激光器研制

报道了中国第一只1.30μm单量子阱边发射激光器的材料生长、器件制备及特性测试.通过优化分子束外延生长参数,调节In和N组分含量使GaInNAs量子阱的发光波长覆盖1.3μm范围.脊形波导条形结构单量子阱边发射激光器,实现了室温连续激射,激射波长为1.30μm,阈值电流密度为1kA/cm2,输出功率为30mW.     

Low threshold current density 1.3 μm metamorphic InGaAs/GaAs quantum well laser diodes

Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mum is centered at 1337.2 nm; the threshold current density is 205 A/cm² at room temperature under continuous-wave operation.     

Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth?0.5 kA/cm2 at 300 K)

Double heterostructure InGaAsP/InP lasers with a three-layer waveguide (or `separate-confinement? DH) have been prepared by the LPE method with a thin active layer. A decrease in threshold current density has been observed up to 512 A/cm2 in a four-sided cleaved diode at room temperature. CW operation of broad-area diodes is obtained in the pumping current range up to 2.5 A. Calculations of threshold current density for these laser structures are presented.     

Single-mode laser diode at 778-nm wavelength: effect of p-doping

An AlGaAs-GaAs double quantum well structure has been grown by metal-organic chemical vapor deposition. High p-doping of the cladding layer (4×10¹⁸ cm^-3) is used to optimize the performance of ridge waveguide laser diodes. A stable single-mode operation is obtained with output power of 120 mW at room temperature. The temperature constant T₀ is ~230 K. Improvements are explained by reduction of electron leakage and by the current self-distribution effect     

n波导层铟组分对GaN基绿光激光二极管光电性能的影响

高功率GaN基激光二极管外延结构理论仿真对提高GaN基激光二极管的光电性能具有重要的指导意义。设计了一种n侧双波导结构的绿光激光二极管外延结构，讨论了激光器外延结构中n-In_xGa_1?xN波导层中铟组分对其光电性能的影响，揭示了n-In_xGa_1?xN波导层对激光二极管光电性能的影响机制。通过调控n-In_xGa_1?xN波导层中铟组分，调控外延层中的光场分布，使光场发生了偏移。结果表明，当n侧In_xGa_1?xN波导层中铟组分最佳值为0.07时，将光子损耗降低了0.2 cm?1，阈值电流由193.49 mA降低到115.98 mA，此外，器件的光子损耗最少，阈值电流最小，工作电压最低，从而提高了激光二极管的输出功率和电光转换效率。因此，当绿光激光二极管的注入电流密度为6 kA/cm2时，功率输出达234.95 mW。n侧双波导结构设计为制备高功率绿光激光二极管提供了理论指导和数据支撑。