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1.
本方案整合开发了发电调度、过程管理和发电后评估的综合管理平台,同时提出了“是否发电”、“何时发电”及“发电过程分析”等一系列算法,在充分利用历史大数据的基础上,为油机发电调度、发电稽核提出了一套创新的思路。  相似文献   

2.
Negative bias temperature instability is studied in thick and thin gate oxide p-MOSFETs. The relative contributions of interface- and bulk-trap generation to this device degradation mode are analyzed for a wide range of stress bias and stress temperature. The effects of gate voltage and oxide field, as well as those of inversion layer holes, impact ionized hot holes, and hot electrons on interface- and bulk-trap generation, are identified. The bulk-trap generation process is interpreted within the modified anode-hole injection model and the mechanism of interface-trap generation is modeled within the framework of the classical reaction-diffusion theory. The diffusion species for interface-trap generation is unambiguously identified. Moreover, a high-temperature, diffusion-triggered, enhanced interface-trap generation mechanism is discussed for thin gate oxide p-MOSFETs. Finally, a novel scaling methodology is proposed for interface-trap generation that helps in obtaining a simple, analytical model useful for reliability projection.  相似文献   

3.
The authors propose a new technique for the automatic generation of test cases for predicates. Earlier, they proposed an efficient effective test generation strategy for Boolean expressions. They now extend this strategy to predicates. Their new strategy addresses several issues, including: analysis of dependencies between relational expressions in a predicate 𝒫; generation of test constraints for 𝒫 based on the detection of Boolean and relational operator faults in 𝒫; and generation of actual tests according to the generated test constraints for 𝒫. They propose: the use of constraint logic programming (CLP) to automate test-data generation for a predicate; and an incremental approach to apply CLP techniques to solve a constraint system. Since their technique is specification-based, it can facilitate generation of anticipated outputs for actual tests  相似文献   

4.
The build-up of thermally generated carriers in a charge-coupled device shift register is characterized by constructing a model for the generation inside a single shift-register bit. Using the model, theoretical response curves are constructed for two practical modes of operation where the contribution from the generation of carriers can be substantial. Experiments are presented which confirm all aspects of the theoretical response curves, including the presence of an initial period of reduced generation in one of the two modes. Procedures for determining generation parameters directly from observed CCD characteristics are presented and implemented. One generation parameter, the minority carrier lifetime τ, is determined by employing the CCD connected in a gate-controlled diode configuration; two others, the depleted surface generation velocity s0, and the general shape of the depletion layer, are determined utilizing a curve fitting procedure. The spatial variation in generation rates is also investigated and found to possess a distribution which is skewed positively and not Gaussian.  相似文献   

5.
The different components of thermal generation in a gate controlled diode are studied theoretically and experimentally. Expressions for the generation current in the space charge layer, the diffusion current from the quasi-neutral bulk and the surface generation current are derived for a gated-diode. The width of the generation zone within the space charge layer is calculated as a function of the energy level of the trap and the diode reverse voltage. This leads to a characteristic of the leakage current as a function of the space charge layer width. It is pointed out that the diffusion current can influence the leakage current and cannot be neglected in structures with a low dark current. In the second part the gate controlled diode is used to characterize the thermal generation in structures with a homogeneous and low dark current. A generation lifetime of 5.5 msec and a surface generation velocity at a depleted surface of 1.5 cm/sec is derived. The generation lifetime is found to be constant as a function of depth into the substrate. A considerable diffusion current is measured which is comparable to the generation current in the space charge layer.  相似文献   

6.
研究未来基于IP的第三代移动通信系统的网络平台。首先讨论第三代移动通信系统业务和网络能力需求;然后给出基于IP的第三代移动通信系统的网络平台(IP^2)的一般结构。  相似文献   

7.
This article discusses the various schemes for generating typical advanced modulation formats in terms of configuration and cost, and particularly presents some recently proposed configurations for optical data generation with better performance or reduced components, including pulsed multichannel source generation for return-to-zero (RZ)-based WDM application, multichannel dual-mode pulse source for carrier-suppressed RZ (CSRZ)-based WDM application, CSRZ and CSRZ differential phase shift keyed (DPSK) signal generation using a single Mach-Zehnder modulator (MZM) together with an electrical mixer, chirped RZ generation with reduced modulator number, and RZ/CSRZ-DPSK generation using a single dual-drive MZM and optical minimum shift keying (MSK).  相似文献   

8.
太阳能发电可分为光发电和热发电两种,其中光发电是不通过热转换直接将太阳光转换成电的方式,也称为光伏发电。太阳能光伏发电是新能源利用的重要领域。文中基于实例分析了屋顶光伏发电系统的大量实际数据,表明了太阳能屋顶光伏发电系统具有良好的社会、经济效益和广阔的发展前景,为今后屋顶光伏发电系统设计和推广提供参考依据。  相似文献   

9.
A contactless Zerbst method has been developed to characterize the generation lifetime and the surface generation velocity of a semiconductor wafer. This characterization is unaffected by the gate leakage current or the device fabrication process. In this study, this contactless Zerbst method was used to characterize the generation lifetime and the surface generation velocity of a partially Au-doped Si wafer. The results demonstrate that the contactless Zerbst method is a powerful technique for characterizing the generation lifetimes and the surface recombination velocities of semiconductor wafers.  相似文献   

10.
The key issue of original implementation for Gentry-style homomorphic encryption scheme is the so called slow key generation algorithm. Ogura proposed a key generation algorithm for Gentry-style somewhat homomorphic scheme that controlled the bound of the evaluation circuit depth by using the relation between the evaluation circuit depth and the eigenvalues of the primary matrix. However, their proposed key generation method seems to exclude practical application. In order to address this problem, a new key generation algorithm based on Gershgorin circle theorem was proposed. The authors choose the eigenvalues of the primary matrix from a desired interval instead of selecting the module. Compared with the Ogura's work, the proposed key generation algorithm enables one to create a more practical somewhat homomorphic encryption scheme. Furthermore, a more aggressive security analysis of the approximate shortest vector problem (SVP) against lattice attacks is given. Experiments indicate that the new key generation algorithm is roughly twice as efficient as the previous methods.  相似文献   

11.
热载流子应力下超薄栅p MOS器件氧化层陷阱电荷的表征   总被引:2,自引:0,他引:2  
利用电荷泵技术研究了 4nmpMOSFET的热载流子应力下氧化层陷阱电荷的产生行为 .首先 ,对于不同沟道长度下的热载流子退化 ,通过直接的实验证据 ,发现空穴陷阱俘获特性与应力时间呈对数关系 .然后对不同应力电压、不同沟道长度下氧化层陷阱电荷 (包括空穴和电子陷阱俘获 )的产生做了进一步的分析 .发现对于 pMOSFET的热载流子退化 ,氧化层陷阱电荷产生分两步过程 :在较短的应力初期 ,电子陷阱俘获是主要机制 ;而随着应力时间增加 ,空穴陷阱俘获作用逐渐显著 ,最后主导了氧化层陷阱电荷的产生.  相似文献   

12.
Conditions for the generation of Dicke supperradiation are studied for two types of quantum dot nanoheterostructures: a planar waveguide and a microdisk. The domain model for the generation of superradiation suggested earlier for quantum wells is generalized to inhomogeneous quantum dot arrays. Different scenarios of the generation of superradiation in a semiconductor microdisk are classified.  相似文献   

13.
利用电荷泵技术研究了4nm pMOSFET的热载流子应力下氧化层陷阱电荷的产生行为.首先,对于不同沟道长度下的热载流子退化,通过直接的实验证据,发现空穴陷阱俘获特性与应力时间呈对数关系.然后对不同应力电压、不同沟道长度下氧化层陷阱电荷(包括空穴和电子陷阱俘获)的产生做了进一步的分析.发现对于pMOSFET的热载流子退化,氧化层陷阱电荷产生分两步过程:在较短的应力初期,电子陷阱俘获是主要机制;而随着应力时间增加,空穴陷阱俘获作用逐渐显著,最后主导了氧化层陷阱电荷的产生.  相似文献   

14.
Many software compilers for embedded processors produce machine code of insufficient quality. Since for most applications software must meet tight code speed and size constraints, embedded software is still largely developed in assembly language. In order to eliminate this bottleneck and to enable the use of high-level language compilers also for embedded software, new code generation and optimization techniques are required. This paper describes a novel code generation technique for embedded processors with irregular data path architectures, such as typically found in fixed-point DSPs. The proposed code generation technique maps data flow graph representation of a program into highly efficient machine code for a target processor modeled by instruction set behavior. High code quality is ensured by tight coupling of different code generation phases. In contrast to earlier works, mainly based on heuristics, our approach is constraint-based. An initial set of constraints on code generation are prescribed by the given processor model. Further constraints arise during code generation based on decisions concerning code selection, register allocation, and scheduling. Whenever possible, decisions are postponed until sufficient information about a good decision has been collected. The constraints are active in the "background" and guarantee local satisfiability at any point of time during code generation. This mechanism permits to simultaneously cope with special-purpose registers and instruction level parallelism. We describe the detailed integration of code generation phases. The implementation is based on the constraint logic programming (CLP) language ECLiPSe. For a standard DSP, we show that the quality of generated code comes close to hand-written assembly code. Since the input processor model can be edited by the user, also retargetability of the code generation technique is achieved within a certain processor class. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   

15.
RSA public key cryptosystem is extensively used in information security systems.However, key generation for RSA cryptosystem requires multiplicative inversion over finite field, which has higher computational complexity, compared with either multiplication in common sense or modular multiplication over fnite field. In order to improve the performance of key generation, we propose a batch private keys generation method in this paper. The method derives efficiency from cutting down multiplicative inversions over finite field. Theoretical analysis shows that the speed of batch private keys generation for s users is faster than that of s times solo private key generation. It is suitable for applications in those systems with large amount of users.  相似文献   

16.
本文为了研究提高风光互补发电系统的效率,引入了双转子发电机结构,有效提高了发电效率和电力输出的稳定性。以期为国内风光混合发电系统优化问题的合理解决提供参考。  相似文献   

17.
Renewable energy generation cannot be consistently predicted or controlled. Therefore, it is currently not widely used in the electricity market, which requires dependable production. In this study, reliability- and variance-based controls of energy storage strategies are proposed to utilize renewable energy as a steady contributor to the electricity market. For reliability-based control, photovoltaic (PV) generation is assumed to be registered in the power generation plan. PV generation yields a reliable output using energy storage units to compensate for PV prediction errors. We also propose a runtime state-of-charge management method for sustainable operations. With variance-based controls, changes in rapid power generation are limited through ramp rate control. This study introduces new reliability and variance indices as indicators for evaluating these strategies. The reliability index quantifies the degree to which the actual generation realizes the plan, and the variance index quantifies the degree of power change. The two strategies are verified based on simulations and experiments. The reliability index improved by 3.1 times on average over 21 days at a real power plant.  相似文献   

18.
采用形式简单但较为精确的Pierret的产生区宽度模型,分析了线性扫描电压作用下MOS电容器的电容一时间(C—t)瞬态特性。在此基础上,建议了一种通过两次不同电压扫描率的线性电压扫描来测定半导体的体产生寿命和表面产生速度的方法。  相似文献   

19.
一种可用于直接计算产生寿命的产生区宽度模型   总被引:2,自引:0,他引:2  
本文在分析已有的深耗尽态下半导体表面产生区宽度模型的基础上,提出了一个可用于由MOS结构的电容时间瞬态特性直接计算产生寿命的新模型。该新模型可以看作是Rabbani Rabbani模型的一种简化,但同时又可看作是对Zerbst模型的一个改进。实验数据的分析表明,用该模型得到的产生寿命值与Rabbani模型的结果基本一致。  相似文献   

20.
谢国坤  张培培  郝森 《激光杂志》2021,42(3):184-187
传统光伏发电系统最大功率点定位精度较差,导致光伏发电系统的功率增益较差,为此提出基于激光点跟踪定位的光伏发电系统最大功率点激光定位方法。构建光伏发电系统的电路阻抗参数分析模型,通过滤波电感和滤波电容联合参数估计的方法,进行光伏发电系统最大功率控制和潮流逆流点跟踪控制,根据控制器参数和功率变化量跟踪定位进行功率突变诱发的激光点,采用激光点扫描方法进行光伏发电系统的受控源参数分析,建立光伏发电系统的端电压分析等效模型,通过光伏并网逆变稳态控制对光伏发电系统最大功率点进行控制,通过激光点定位方法,实现光伏发电系统最大功率点激光定位系统的优化设计。仿真结果表明,采用该方法进行光伏发电系统最大功率点激光定位的精度可达99.96%,功率突变引发的电路过渡过程得到优化控制,提高了光伏发电系统的稳定性和输出增益。  相似文献   

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