Fine tuning hole injection for high-performance polyfluorene-based blue emitting device by adjusting work function of anode via deposition of CFx layer with proper ionization potential on indium tin oxide

By introducing CF_x thin film as hole injection layer on top of indium tin oxide (ITO) anode via plasma polymerization of CHF₃, the device with poly(9,9-dioctylfluorene) (PFO) as emitting layer, ITO/CF_x(35 W)/PFO/CsF/Ca/Al, is prepared. At the optimal C/F atom ratio using the radio frequency power 35 W, the device performance is optimal having the maximum current efficiency 3.1 cd/A and maximum brightness 8400 cd/m². This is attributed to a better balance between hole and electron fluxes, resulting from a decrease in hole injection barrier as manifested by ultraviolet photoelectron spectroscopy and scanning surface potential microscopy.     

Fabrication of high efficiency and color stable white organic light-emitting diodes by an alignment free mask patterning

Small molecule based white organic light-emitting diodes were fabricated by using an alignment free mask patterning method. A phosphorescent red/green emitting layer was patterned by a metal mask without any alignment and a blue phosphorescent emitting layer was commonly deposited on the patterned red/green emitting layer. A white emission could be obtained due to separate emission of red/green and blue emitting layers. A maximum current efficiency of 30.7 cd/A and a current efficiency of 26.0 cd/A at 1000 cd/m² were obtained with a color coordinate of (0.39, 0.45). In addition, there was little change of emission spectrum according to luminance because of balanced red/green and blue emissions.     

High-efficiency low color temperature organic light emitting diodes with solution-processed emissive layer

Low color temperature (CT) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency low CT organic light emitting diode can be easily fabricated by spin coating a single white emission layer. The resultant white device shows an external quantum efficiency (EQE) of 22.8% (34.9 lm/W) with CT 2860 K at 100 cd/m², while is shown 18.8% (24.5 lm/W) at 1000 cd/m². The high efficiency may be attributed to the use of electroluminescence efficient materials and the ambipolar-transport host. Besides, proper device architecture design enables excitons to form on the host and allows effective energy transfer from host to guest or from high triplet guest to low counterparts. By decreasing the doping concentration of blue dye in the white emission layer, the device exhibited an orange emission with a CT of 2280 K. An EQE improvement was observed for the device, whose EQE was 27.4% (38.8 lm/W) at 100 cd/m² and 20.4% (24.6 lm/W) at 1000 cd/m².     

New hole blocking material for green-emitting phosphorescent organic electroluminescent devices

The new amorphous molecular material, 2,5-bis(4-triphenylsilanyl-phenyl)-[1,3,4]oxadiazole, that functions as good hole blocker as well as electron transporting layer in the phosphorescent devices. The obtained material forms homogeneous and stable amorphous film. The new synthesized showed the reversible cathodic reduction for hole blocking material and the low reduction potential for electron transporting material in organic electroluminescent (EL) devices. The fabricated devices exhibited high performance with high current efficiency and power efficiency of 45 cd/A and 17.7 lm/W in 10 mA/cm², which is superior to the result of the device using BAlq (current efficiency: 31.5 cd/A and power efficiency: 13.5 lm/W in 10 mA/cm²) as well-known hole blocker. The ITO/DNTPD/α-NPD/6% Ir(ppy)₃ doped CBP/2,5-bis(4-triphenylsilanyl-phenyl)-[1,3,4]oxadiazole as both hole blocking and electron transporting layer/Al device showed efficiency of 45 cd/A and maximum brightness of 3000 cd/m² in 10 mA/cm².     

Small molecule interlayer for solution processed phosphorescent organic light emitting device

Using a 4,4′,4′′-tris(N-carbazolyl)-triphenylamine (TCTA) small molecule interlayer, we have fabricated efficient green phosphorescent organic light emitting devices by solution process. Significantly a low driving voltage of 3.0 V to reach a luminance of 1000 cd/m² is reported in this device. The maximum current and power efficiency values of 27.2 cd/A and 17.8 lm/W with TCTA interlayer (thickness 30 nm) and 33.7 cd/A and 19.6 lm/W with 40 nm thick interlayer are demonstrated, respectively. Results reveal a way to fabricate the phosphorescent organic light emitting device using TCTA small molecule interlayer by solution process, promising for efficient and simple manufacturing.     

Efficient simplified orange and white phosphorescent organic light-emitting devices with reduced efficiency roll-off

Efficient orange phosphorescent organic light-emitting devices based on simplified structure with maximum efficiencies of 46.5 lm/W and 51.5 cd/A were reported. One device had extremely low efficiency roll-off with efficiencies of 50.6 cd/A, 45.0 cd/A and 39.2 cd/A at 1000 cd/m², 5000 cd/m² and 10,000 cd/m² respectively. The reduced efficiency roll-off was attributed to more balanced carrier injection and broader recombination zone. The designed simplified white device showed much lower efficiency roll-off than the control one based on multiple emitting layers. The efficiency of simplified white device was 40.8 cd/A at 1000 cd/m² with Commission Internationale de I’Eclairage coordinates of (0.39, 0.46).     

A low drive voltage,transparent, metal-free n–i–p electrophosphorescent light emitting diode

We demonstrate a transparent, inverted, electrophosphorescent n–i–p organic light emitting diode (OLED) exhibiting a luminance of 500 cd/m² at 3.1 V, and with a luminous power efficiency of 23 lm/W when light emitted from both top and bottom surfaces is summed. We find that 10% more light is emitted from the top surface; hence a power efficiency of 12 lm/W is obtained for a device viewed through the top, transparent contact. This device, with applications to head-up and displays employing n-type Si driver circuitry, has significantly higher power efficiency and lower drive voltage than undoped fluorescent inverted OLEDs. Efficient injection of both electrons and holes is made possible by controlled n- and p-doping of the transport layers with high doping levels. The light emitting region is protected from ITO sputtering damage by a 210 nm thick p-doped hole transport layer. The transparency of the device at the peak OLED emission wavelength of 510 nm is (80 ± 5)%.     

Fluorene-based Tröger’s base analogues: Potential electroluminescent materials

Two new Λ-shaped fluorene-based Tröger’s base (TB) analogues with aryl substitutions are successfully synthesized and their photophysical and electroluminescent properties are examined in detail. Both compounds exhibit strong fluorescence emission in dilute solutions and aggregated states. Some abnormal photophysical behaviors have been observed; that is, the amorphous films of the two TB analogues show multiple blue–green emissions similar to the emissions of some polyfluorenes and oligofluorenes, while both the dilute solutions and the polycrystalline powders of two compounds show single blue–violet emission. Furthermore, the emissions of the amorphous film are obviously red-shifted in comparison with the polycrystalline powders. Organic light emitting diodes (OLEDs) using the two compounds as non-doped emitters with device structure of ITO/NPB (30 nm)/TBFB-BP or TBFB-FB (40 nm)/TPBI (40 nm)/LiF (1 nm)/Al (80 nm) were fabricated and high brightness (22047 cd/m² for TBFB-BP and 13434 cd/m² for TBFB-FB), high efficiency (2.78 cd/A, 1.82 lm/W for TBFB-BP and 2.76 cd/A, 1.93 lm/W for TBFB-FB) and low turn-on voltage (4.6 V for TBFB-BP and 4.5 V for TBFB-FB) were obtained. Our studies suggest that TB analogues could be excellent light emitting materials for OLED applications.     

Transparent conductors with an ultrathin nickel layer for high-performance photoelectric device applications

A thin nickel (Ni) layer of thickness 5 nm was inserted in between the indium tin oxide (ITO) layers of thickness 50 nm each so as to increase the conductivity of ITO without affecting much of its transmittance nature. ITO layers with and without Ni film were prepared by reactive DC sputtering on both Si and glass substrates. The influence of Ni layer on the optical and electrical properties of prepared devices was investigated. Due to the insertion of thin Ni layer, the resistivity of ITO/Ni/ITO sample (3.2×10⁻⁴ Ω cm) was reduced 10 times lesser than that of ordinary ITO layer (38.6×10⁻⁴ Ω cm); consequently it increased the mobility of ITO/Ni/ITO device. The external and internal quantum efficiencies (EQE and IQE) of ITO/Ni/ITO device exhibited better performance when compared to ITO layer that has no Ni film. At wavelengths of 350 and 600 nm, the photoresponses of ITO/Ni/ITO device were predominant than that of reference ITO device. This highly conductive and photoresponsive Ni inserting ITO layers would be a promising device for various photoelectric applications.     

Highly efficient green top-emitting organic light-emitting devices with metal electrode structure

In this work, the electrical and optical characteristics of top-emitting organic light-emitting device (TEOLED) using metal Ag as anode with different thicknesses have been investigated. The emission peak of fabricated TEOLED is 512 nm for a full-width at half-maximum (FWHM) of 48 nm in forward direction. The TEOLED turns on at 3 V with luminance of 2.38 cd/m² and reaches 16,300 cd/m² at 9 V. The maximum of current efficiency is 5.2 cd/A at 7 V, corresponding to the external quantum efficiency of 1.72%.     

Highly efficient single-layer organic light-emitting devices using cationic iridium complex as host

Highly efficient single-layer organic light-emitting devices (OLEDs) based on blended cationic Ir complexes as emitting layer have been demonstrated using narrow band gap cationic Ir complex [Ir(Meppy)₂(pybm)](PF₆) (C1) as guest and wide band gap cationic Ir complex [Ir(dfppy)₂(tzpy-cn)](PF₆) (C2) as host. As compared with single cationic Ir complex emitting layer, these host–guest systems exhibit highly enhanced efficiencies, with maximum luminous efficiency of 25.7 cd/A, external quantum efficiency of 8.6%, which are nearly 3-folds of those of pure C1-based device. Compared with a multilayer host-free device containing C1 as emitting layer and TPBI as electron-transporting and hole-blocking layer, the above single-layer devices also show 2-folds enhancement efficiencies. The high efficiencies achieved in these host–guest systems are among the highest values reported for ionic Ir complexes-based solid-state light-emitting devices. In addition, a white-similar emission with CIE of (0.36, 0.47) has also been achieved with luminous efficiency of 4.2 cd/A as the C1 concentration is 0.1 wt.%. The results demonstrate that the ionic Ir complexes-based host–guest system provides a new approach to achieve highly efficient OLEDs upon single-layer device structure and solution-processing technique.     

Highly efficient green phosphorescent organic light emitting diodes with simple structure

A series of simple structures is investigated for realization of the highly efficient green phosphorescent organic light emitting diodes with relatively low voltage operation. All the devices were fabricated with mixed host system by using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and 1,3,5-tri(p-pyrid-3-yl-phenyl)benzene (TpPyPB) which were known to be hole and electron type host materials due to their great hole and electron mobilities [μ_h(TAPC): 1 × 10^?2 cm²/V s and μ_e(TpPyPB): 7.9 × 10^?3 cm²/V s] [1]. The optimized device with thin TAPC (5–10 nm) as an anode buffer layer showed relatively high current and power efficiency with low roll-off characteristic up to 10,000 cd/m². The performances of the devices; with buffer layer were compared to those of simple devices with single layer and three layers. Very interestingly, the double layer device with TAPC buffer layer showed better current and power efficiency behavior compared to that of three layer device with both hole and electron buffer layers (TAPC, TpPyPB, respectively).     

Pyrene functioned diarylfluorenes as efficient solution processable light emitting molecular glass

In this paper, we described a new category of solution processable small molecule organic light emitting materials, the pyrene functioned diarylfluorenes: 2PE-PPF and DPE-PPF. They emit blue light in solution and green light in film, and show high thermal stability with the 5% weight loss temperature (T_d) over 400 °C. The glass transition temperature (T_g) for 2PE-PPF and DPE-PPF is 102 °C and 147 °C, respectively. These molecules are interesting molecular glass and they have good film forming abilities. Smooth and uniform film could be obtained by spin-coating. This character enables them able to be used in solution processed OLEDs by spin-coating or jet-printing. Single layered device using 2PE-PPF as the active material shows a turn-on voltage of 3.2 V, brightness over 8000 cd/m² and current efficiency up to 2.55 cd/A. Double layered device by inserting TPBI as the hole-blocking electron-transporting layer increases the maximum efficiency to 5.83 cd/A.     

Doping-free orange and white phosphorescent organic light-emitting diodes with ultra-simply structure and excellent color stability

We demonstrate simplified doping-free orange phosphorescent organic light-emitting diodes (OLEDs) based on ultrathin emission layer. The optimized orange device has the maximum current efficiency of 52.1 cd/A and power efficiency of 36.3 lm/W, respectively. Efficient simplified doping-free white OLEDs employing blue and orange ultrathin emission layers have excellent color stability, which is attributed to the avoidance of the movement of charges recombination zone and no differential color aging. One white device exhibits high efficiency of 33.6 cd/A (30.1 lm/W). Moreover, the emission mechanism of doping-free orange and white OLEDs is also discussed.     

Optoelectronic characteristics of MEH-PPV polymer LEDs with thin,doped composition-graded a-SiC:H carrier injection layers

The optoelectronic characteristics of poly(2-methoxy-5-(2′ethyl-hexoxy)-1,4-phenylene-vinylene) (MEH-PPV) polymer LEDs (PLEDs) have been improved by employing thin doped composition-graded (CG) hydrogenated amorphous silicon–carbide (a-SiC:H) films as carrier injection layers and O₂-plasma treatment on indium–tin-oxide (ITO) transparent electrode, as compared with previously reported ones having doped constant-optical-gap a-SiC:H carrier injection layers. For PLEDs with an n-type a-SiC:H electron injection layer (EIL) only, the electroluminescence (EL) threshold voltage and brightness were improved from 7.3 V, 3162 cd/m² to 6.3 V, 5829 cd/m² (at a current density J = 0.6 A/cm²), respectively, by using the CG technique. The enhancement of EL performance of the CG technique was due to the increased electron injection efficiency resulting from a smoother barrier and reduced recombination of charge carriers at the EIL and MEH-PPV interface. Also, surface modification of the ITO transparent electrode by O₂-plasma treatment was used to further improve the EL threshold voltage and brightness of this PLED to 5.1 V, 6250 cd/m² (at J = 0.6 A/cm²). Furthermore, by employing the CG n[p]-a-SiC:H film as EIL [hole injection layer (HIL)] and O₂-plasma treatment on the ITO electrode, the brightness of PLEDs could be enhanced to 9350 cd/m² (at a J = 0.3 A/cm²), as compared with the 6450 cd/m² obtained from a previously reported PLED with a constant-optical-gap n-a-SiCGe:H EIL and p-a-Si:H HIL.     

Organic light-emitting diodes fabricated on recessed anodes for light extraction enhancement

Circular recesses have been fabricated on indium tin oxide (ITO) anodes to enhance light extraction of organic light-emitting diodes (OLEDs). The effects of recess depth and recess coverage ratio on the performance of a green OLED were systematically investigated. Results showed that the current efficiency could be enhanced from 40.7 cd/A of a planar device to 47.2 cd/A of the device with a recess depth of 100 nm and a recess coverage ratio of 14.1%. The enhanced light extraction by the recess wall effect was realized to be the major factor leading to the improved efficiency. The efficiency is however limited by the accompanying increase in electrical resistivity of the ITO films at deep recesses and high recess coverage ratios. Despite of the insignificant efficiency enhancement (up to 16%) in this study, this recessed ITO approach provides a simple architecture to enhance waveguide mode light extraction without adding an internal medium.     

Hydroxyethyl cellulose filled with M2+ chelate complexes with ethylenediaminetetraacetic acid (EDTA) as an effective electron-injection layer for polymer light-emitting diodes

An effective electron-injection layer (EIL) is crucial to the development of highly efficient polymer light-emitting diodes (PLEDs) using stable, high work-function aluminium as the cathode. This work presents the first investigation using hydroxyethyl cellulose (HEC), filled with chelate complexes [(CH₃COO)₂-M, EDTA-M; M: Ca²⁺, Mg²⁺], as an electron-injection layer (EIL) to fabricate multilayer polymer light-emitting diodes (ITO/PEDO:PSS/HY-PPV/EIL/Al) by spin-coating processes. Devices based on HEC doped with EDTA-M provided the best performance. The maximum luminance and maximum current efficiency of polymer light-emitting diodes with EDTA-Ca in an HEC layer were 7502 cd/m² and 2.85 cd/A, respectively, whereas those with EDTA-Mg were 8443 cd/m² and 3.12 cd/A, which was approximately seven- to eight-fold of that without EIL. This performance enhancement was attributed to electron donation from the chelator that reduces metal cations to a “pseudo-metallic state”, enabling it to act as an intermediate step to facilitate electron injection. The results demonstrate that chelates of bivalent cations with EDTA can potentially serve as electron-injection materials for optoelectronic applications.     

Voltage-tunable SiO2-isolated a-SiC:H and/or a-SiN:H p–i–n thin-film LEDs fabricated on c-Si

A voltage-tunable amorphous p–i–n thin-film light emitting diodes (TFLEDs) with SiO₂-isolation on n⁺-type crystalline silicon (c-Si) has been proposed and fabricated successfully. The structure of the device with i-a-SiC:H and i-a-SiN:H luminescent layers is indium–tin–oxide (ITO)/p⁺-a-Si:H/p⁺-a-SiC:H/i-a-SiC:H/i-a-SiN:H/n⁺-a-SiCGe: H/n⁺-a-SiC:H/n⁺-c-Si/Al. This device revealed a brightness of 695 cd/m² at an injection current density of 300 mA/cm². Its EL (electroluminescence) peak wavelength exhibited blue-shift from 655 to 565 nm with applied forward-bias (V) increasing from 15 to 19 V, but the EL peak wavelength was red-shifted from 565 to 670 nm with further increase of V from 19 to 23 V. By comparing with the EL spectra from p–i–n TFLEDs with i-a-SiC:H or i-a-SiN:H luminescent layer only, the EL spectrum of this TFLED could consist of three bands of radiations from the tail-to-tail-state recombinations in (1) i-a-SiC:H layer, (2) i-a-SiN:H layer, and (3) i-a-SiC:H/p⁺-a-SiC:H junction.     

Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer

There is an emission peak at 494 nm in the electroluminescence (EL) of PVK [poly(n-vinylcarbazole)]: Eu(o-BBA)₃(phen) besides PVK exciton emission and Eu³⁺ characteristic emissions. Both the peaking at 494 nm emission and PVK emission influenced the color purity of red emission from Eu(o-BBA)₃(phen). In order to restrain these emissions and obtain high intensity red emission, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7,-tetramethyljulolidy-9-enyl)-4Hpyran (DCJTB) and Eu(o-BBA)₃(phen) were co-doped in PVK solution and used as the active emission layer. The EL intensity of co-doped devices reached to 420 cd/m² at 20 V driving voltage. The chromaticity coordinates of EL was invariable (x = 0.55, y = 0.36) with the increase of driving voltage. For further improvement of EL intensity, organic–inorganic hybrid devices (ITO/active emission layer/ZnS/Al) were fabricated. The EL intensity was increased by a factor of 2.5 [(420 cd/m²)/(168 cd/m²)] when the Eu complex was doped with an efficient dye DCJTB, and by a factor of ≈4 [(650 cd/m²)/(168 cd/m²)] when in addition ZnS layer was deposited on such an emitting layer prior to evaporation of the Al cathode.     

Near infra-red transparent Mo-doped In2O3 by hetero targets sputtering for phosphorescent organic light emitting diodes

We report a highly near infrared (NIR) transparent MoO₃-doped In₂O₃ (IMO) film prepared by hetero target sputtering for use as a transparent anode in phosphorescent organic light emitting diodes (OLEDs). Effective activation of Mo dopant in the In₂O₃ matrix and good crystallinity with the (2 2 2) preferred orientation from by rapid thermal annealing (RTA) led to the lowest resistivity of 4.25 × 10^?4 Ohm cm and sheet resistance of 16.9 Ohm/square, comparable to a conventional ITO anode without lose of transparency in the NIR region. Due to high carrier mobility in the IMO matrix, IMO film exhibited higher transmittance in the visible and NIR regions compared to ITO film even though it has a similar resistivity. Both synchrotron X-ray scattering and high resolution transmission electron microscope examinations showed that the optimized IMO film annealed at 600 °C had a rectangular shaped columnar structure with a strongly preferred (2 2 2) orientation. Identical current density–voltage–luminance and quantum efficiency of the phosphorescent OLED fabricated on an IMO anode were comparable to those of the OLED on a reference ITO anode due to the high transparency and low resistivity of the IMO anode.