Extremely low driving voltage electrophosphorescent green organic light-emitting diodes based on a host material with small singlet–triplet exchange energy without p- or n-doping layer

In order to achieve low driving voltage, electrophosphorescent green organic light-emitting diodes (OLEDs) based on a host material with small energy gap between the lowest excited singlet state and the lowest excited triplet state (ΔE_ST) have been fabricated. 2-biphenyl-4,6-bis(12-phenylindolo[2,3-a] carbazole-11-yl)- 1,3,5-triazine (PIC–TRZ) with ΔE_ST of only 0.11 eV has been found to be bipolar and used as the host for green OLEDs based on tris(2-phenylpyridinato) iridium(III) (Ir(ppy)₃). A very low onset voltage of 2.19 V is achieved in devices without p- or n-doping. Maximum current and power efficiencies are 68 cd/A and 60 lm/W, respectively, and no significant roll-off of current efficiency (58 cd/A at 1000 cd/m² and 62 cd/A at 10,000 cd/m²) have been observed. The small roll-off is due to the improved charge balance and the wide charge recombination zone in the emissive layer.     

Dual enhancing properties of LiF with varying positions inside organic light-emitting devices

A multilayer organic light-emitting device (OLED) has been fabricated with a thin (0.3 nm) lithium fluoride (LiF) layer inserted inside an electron transport layer (ETL), aluminum tris(8-hydroxyquinoline) (Alq₃). The LiF electron injection layer (EIL) has not been used at an Al/Alq₃ interface in the device on purpose to observe properties of LiF. The electron injection-limited OLED with the LiF layer inside 50 nm Alq₃ at a one forth, a half or a three forth position assures two different enhancing properties of LiF. When the LiF layer is positioned closer to the Al cathode, the injection-limited OLED shows enhanced injection by Al interdiffusion. The Al interdiffusion at least up to 12.5 nm inside Alq₃ rules out the possible insulating buffer model in a small molecule bottom-emission (BE) OLED with a thin, less than one nanometer, electron injection layer (EIL). If the position is further away from the Al cathode, the Al diffusion reaches the LiF layer no longer and the device shows the electroluminescence (EL) enhancement without an enhanced injection. The suggested mechanism of LiF EL efficiency enhancer is that the thin LiF layer induces carrier trap sites and the trapped charges alters the distribution of the field inside the OLED and, consequently, gives a better recombination of the device. By substituting the Alq₃ ETL region with copper phthalocyanine (CuPc), all of the electron injection from the cathode of Al/CuPc interface, the induced recombination at the Alq₃ emitting layer (EML) by the LiF EL efficiency enhancer, and the operating voltage reduction from high conductive CuPc can be achieved. The enhanced property reaches 100 mA/cm² of current density and 1000 cd/m² of luminance at 5 V with its turn-on slightly larger than 2 V. The enhanced device is as good as our previously reported non-injection limited LiF EIL device [Yeonjin Yi, Seong Jun Kang, Kwanghee Cho, Jong Mo Koo, Kyul Han, Kyongjin Park, Myungkeun Noh, Chung Nam Whang, Kwangho Jeong, Appl. Phys. Lett. 86 (2005) 213502].     

Improved hole-transporting properties of Ir complex-doped organic layer for high-efficiency organic light-emitting diodes

We have investigated the hole-transporting properties of three different Ir complexes doped 4,4′,4″-tri (N-carbazolyl) triphenylamine (TCTA) using a series of hole-only devices. The improvement of hole-transporting ability was depended on the species of Ir complexes and their doping concentrations. We attributed the improved performance to their strong electron-accepting abilities or hole-transfer capabilities. Yellow organic light-emitting diodes (OLEDs) based on bis(2-phenylbenzothiazolato)(acetylacetonate)iridium bt₂Ir(acac) were fabricated by utilizing this method with optimized doping concentration. The best electroluminescent (EL) performance of maximum 83.6 lm/W was obtained for the yellowing-emitting OLED by doping of Firpic into TCTA hole transport layer, compared with the cases of doping of Ir(ppy)₃ into TCTA and doping of Ir(bpiq)₂acac into TCTA. Moreover, the turn-on voltage of device decreased to 2.2 V, which was corresponding to the optical band gap of the emitter.     

Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer

There is an emission peak at 494 nm in the electroluminescence (EL) of PVK [poly(n-vinylcarbazole)]: Eu(o-BBA)₃(phen) besides PVK exciton emission and Eu³⁺ characteristic emissions. Both the peaking at 494 nm emission and PVK emission influenced the color purity of red emission from Eu(o-BBA)₃(phen). In order to restrain these emissions and obtain high intensity red emission, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7,-tetramethyljulolidy-9-enyl)-4Hpyran (DCJTB) and Eu(o-BBA)₃(phen) were co-doped in PVK solution and used as the active emission layer. The EL intensity of co-doped devices reached to 420 cd/m² at 20 V driving voltage. The chromaticity coordinates of EL was invariable (x = 0.55, y = 0.36) with the increase of driving voltage. For further improvement of EL intensity, organic–inorganic hybrid devices (ITO/active emission layer/ZnS/Al) were fabricated. The EL intensity was increased by a factor of 2.5 [(420 cd/m²)/(168 cd/m²)] when the Eu complex was doped with an efficient dye DCJTB, and by a factor of ≈4 [(650 cd/m²)/(168 cd/m²)] when in addition ZnS layer was deposited on such an emitting layer prior to evaporation of the Al cathode.     

Color stable phosphorescent white organic light-emitting diodes with double emissive layer structure

In this paper, we report color stable phosphorescent white organic light-emitting diodes (OLEDs) based on a double emissive layer (EML) structure composed of blue and red/green phosphorescent units. Deep hole trapping situation of red and green dopants at the red/green EML could induce less voltage dependent white spectral characteristics by restricting the change of exciton generation zone. A wide band-gap host material, 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), was used for achieving such deep-trap generation. Fabricated phosphorescent white OLED shows a slight color coordinate change of (?0.002, +0.002) from 1000 cd/m² to 5000 cd/m² with power efficiency of 38.7 lm/W and current efficiency of 46.4 cd/A at 1000 cd/m². In addition, negligible color changes were observed by delaying red dopant saturation time using optimum red dopant concentration.     

New hole blocking material for green-emitting phosphorescent organic electroluminescent devices

The new amorphous molecular material, 2,5-bis(4-triphenylsilanyl-phenyl)-[1,3,4]oxadiazole, that functions as good hole blocker as well as electron transporting layer in the phosphorescent devices. The obtained material forms homogeneous and stable amorphous film. The new synthesized showed the reversible cathodic reduction for hole blocking material and the low reduction potential for electron transporting material in organic electroluminescent (EL) devices. The fabricated devices exhibited high performance with high current efficiency and power efficiency of 45 cd/A and 17.7 lm/W in 10 mA/cm², which is superior to the result of the device using BAlq (current efficiency: 31.5 cd/A and power efficiency: 13.5 lm/W in 10 mA/cm²) as well-known hole blocker. The ITO/DNTPD/α-NPD/6% Ir(ppy)₃ doped CBP/2,5-bis(4-triphenylsilanyl-phenyl)-[1,3,4]oxadiazole as both hole blocking and electron transporting layer/Al device showed efficiency of 45 cd/A and maximum brightness of 3000 cd/m² in 10 mA/cm².     

Highly efficient bluish green phosphorescent organic light-emitting diodes based on heteroleptic iridium(III) complexes with phenylpyridine main skeleton

A new series of heteroleptic iridium(III) complexes, bis(2-phenylpyridinato-N,C2′)iridium (2-(2′,4′-difluorophenyl)-4-methylpyridine), (ppy)₂Ir(dfpmpy) and bis(2-(2′,4′-difluorophenyl)-4-methylpyridinato-N,C2′)iridium (2-phenylpyridine) (dfpmpy)₂Ir(ppy), have been synthesized by using phenylpyridine as a main skeleton for bluish green phosphorescent organic light-emitting diodes (PhOLEDs). The Ir(III) complexes showed high thermal stability and high photoluminescent (PL) quantum yields of 95% ± 4% simultaneously. As a result, the PhOLEDs with the heteroleptic Ir(III) complexes showed excellent performances approaching 100% internal quantum efficiency with a very high external quantum efficiency (EQE) of ∼27%, a low turn-on voltage of 2.4 V, high power efficiency of ∼85 lm/W, and very low efficiency roll-off up to 20,000 cd/m².     

Low driving voltage white organic light-emitting diodes with high efficiency and low efficiency roll-off

Single emission layer white organic light-emitting diodes (WOLEDs) showing high color stability, low turn-on voltage, high efficiency and low efficiency roll-off by incorporating iridium(III) bis[(4,6-difluo-rophenyl)-pyridinato-N,C2] (FIrpic) and bis(2-phenylbenzothiazolato) (acetylacetonate)iridium(III) (Ir(BT)₂(acac)) phosphors dyes have been demonstrated. Our WOLEDs without any out-coupling schemes as well as n-doping strategies show low operating voltages, low turn-on voltage (defined for voltage to obtain a luminance of 1 cd/m²) of 2.35 V, 79.2 cd/m² at 2.6 V, 940.5 cd/m² at 3.0 V and 10 300 cd/m² at 4.0 V, respectively, and achieve a current efficiency of 40.5 cd/A, a power efficiency of 42.6 lm/W at a practical brightness of 1000 cd/m², and a low efficiency roll-off 14.7% calculated from the maximum efficiency value to that of 5000 cd/m². Such improved properties are attributed to phosphors assisted carriers transport for achieving charge carrier balance in the single light-emitting layer (EML). Meanwhile the host–guest energy transfer and direct exciton formation process are two parallel pathways serve to channel the overall excitons to dopants, greatly reduced the unfavorable energy losses.     

Device performances of third order micro-cavity green top-emitting organic light emitting diodes

Results on the device performances of 3rd order micro-cavity effects in green top emitting organic light emitting diodes (TEOLEDs) with optical spacer layer are reported. The performances of fabricated 3rd order micro-cavity green devices using fac-tris(2-phenylpyridine)iridium [Ir(ppy)₃] green phosphorescent emitter and magnesium silver alloy semi-transparent cathode are systematically compared with the 2nd order cavity device. The optical and electrical simulation results of the 3rd order cavity device with emissive layer (EML) located near the semi-transparent cathode shows a current efficiency (CE) of 71.0 cd/A (70% value of the 2nd order device) and more serious color coordinates shift as compared to the 2nd order cavity device. With the center EML positioned 3rd order cavity device similar color variation behavior is observed but the CE value is 73.8 cd/A (73% value of the 2nd order device). The fabricated 3rd order TEOLEDs exhibit about 65–75% CE values of the 2nd order device as the simulation. Additionally, the viewing angle characteristics are significantly improved in the 3rd order center EML TEOLEDs as the simulation. The performances of fabricated TEOLEDs with 3rd order micro-cavity conditions are in quite good agreement with the optical and electrical simulation results.     

Concentration-insensitive and low-driving-voltage OLEDs with high efficiency and little efficiency roll-off using a bipolar phosphorescent emitter

A series of simplified trilayer phosphorescent organic light-emitting diodes (PHOLEDs) with high efficiency and little efficiency roll-off based on a bipolar iridium emitter Iridium(III) bis(2-phenylpyridinato)-N,N′-diisopropyl-diisopropyl-guanidinate (ppy)₂Ir(dipig) has been demonstrated. They are dominated by the efficient direct-exciton-formation mechanism and show gratifying concentration-insensitive and low-driving-voltage features. In particular, very high and stable electroluminescence (EL) efficiencies (maximum power efficiency and external quantum efficiency >98 lm W^?1 and 25% respectively, and external quantum efficiency >20% over a wide luminance range of 1–15,000 cd m^?2) are achieved in the PHOLEDs based on emitting layers (EMLs) consisting of (ppy)₂Ir(dipig) codeposited with common host CBP in an easily controlled doping concentration range (15–30 wt%). The EL performance of the PHOLEDs is comparable to the highest PHOLEDs reported in scientific literature.     

Improved efficiency in fluorescent blue organic light emitting diode with a carrier confining structure

A blue organic light emitting device (OLED) with improved efficiency and good color purity is reported. The highest occupied molecular orbital (HOMO) level of the hole transport layer (HTL) and that of the emissive layer (EML) differs by 0.3 eV. This energy level mismatch confines the carriers at the HTL/EML interface. Conventional devices have only one HTL/EML interface, with a current efficiency of 2.9 cd/A. Without adding a separate hole blocking layer, incorporating multi-layers of the same HTL and EML increases this efficiency to 5.8 cd/A, with only a small increase in operating voltage yielding increased power efficiency also. But, there are an optimum number of layers, beyond which efficiency loss results. Also, including the multilayer structure simultaneously improves the blue color co-ordinates. To gain insight into the role of multilayer structures in modifying charge transport and recombination zone a simulator was developed. The simulated results could qualitatively explain the experimental observations.     

Green and blue–green light-emitting electrochemical cells based on cationic iridium complexes with 2-(4-ethyl-2-pyridyl)-1H-imidazole ancillary ligand

The ionic iridium complexes, [Ir(ppy)₂(EP-Imid)]PF₆ (Complex 1) and [Ir(dfppy)₂(EP-Imid)]PF₆ (Complex 2) are used as the light-emitting material for the fabrication of light-emitting electrochemical cells (LECs). These complexes have been synthesized, employing 2-(4-ethyl-2-pyridyl)-1H-imidazole (EP-Imid) as the ancillary ligand, 2-phenylpyridine (ppy) and 2-(2,4-difluorophenyl)pyridine (dfppy) as the cyclometalated ligands, which were characterized by various spectroscopic, photophysical and electrochemical methods. The photoluminescence (PL) emission spectra in acetonitrile solution show blue–green and blue light emission for Complexes 1 and 2 respectively. However, LECs incorporating these complexes resulted in green (522 nm) light emission for Complex 1 with the Commission Internationale de L’Eclairage (CIE) coordinates of (0.33, 0.56) and blue–green (500 nm) light emission for Complex 2 with the CIE coordinates of (0.24, 0.44). Using Complex 1, a maximum luminance of 1191 cd m⁻² and current efficiency of 1.0 cd A⁻¹ are obtained while that of Complex 2 are 741 cd m⁻² and 0.88 cd A⁻¹ respectively.     

Tandem white organic light-emitting device using non-modified Ag layer as cathode and interconnecting layer

Tandem white organic light-emitting device (WOLED) using non-modified Ag film as cathode and interconnecting layer is demonstrated. Effective electron injection is achieved when Ag is deposited on 4,7-diphenyl-1,10-phenanthroline electron transporting layer without any modified layer. Single OLED with Ag cathode shows comparable performance to that of device with Mg:Ag cathode. Such tandem WOLED exhibits low driving voltage, high power efficiency (15.1 lm/W at 1000 cd/m²) and low efficiency roll-off. The working mechanisms of single and tandem devices were discussed in detail. These results could provide a simple method to fabricate high performance tandem white OLED.     

A hybrid white organic light-emitting diode with stable color and reduced efficiency roll-off by using a bipolar charge carrier switch

A hybrid white organic light-emitting diode (WOLED) with an emission layer (EML) structure composed of red phosphorescent EML/green phosphorescent EML/spacer/blue fluorescent EML was demonstrated. This hybrid WOLED shows high efficiency, stable spectral emission and low efficiency roll-off at high luminance. We have attributed the significant improvement to the wide distribution of excitons and the effective control of charge carriers in EMLs by using mixed 4,4′,4″-tri(9-carbazoyl) triphenylamine (TCTA) and bis[2-(2-hydroxyphenyl)-pyridine] beryllium (Bepp₂) as the host of phosphorescent EMLs as well as the spacer. The bipolar mixed TCTA:Bepp_2, which was proved to be a charge carrier switch by regulating the distribution of charge carriers and then the exciton recombination zone, plays an important role in improving the efficiency, stabilizing the spectrum and reducing the efficiency roll-off at high luminous. The hybrid WOLED exhibits a current efficiency of 30.2 cd/A, a power efficiency of 32.0 lm/W and an external quantum efficiency of 13.4% at a luminance of 100 cd/m², and keeps a current efficiency of 30.8 cd/A, a power efficiency of 27.1 lm/W and an external quantum efficiency of 13.7% at a 1000 cd/m². The Commission Internationale de l’Eclairage (CIE) coordinates of (0.43, 0.43) and the color rendering index (CRI) of 89 remain nearly unchanged in the whole range of luminance.     

Optoelectronic characteristics of MEH-PPV polymer LEDs with thin,doped composition-graded a-SiC:H carrier injection layers

The optoelectronic characteristics of poly(2-methoxy-5-(2′ethyl-hexoxy)-1,4-phenylene-vinylene) (MEH-PPV) polymer LEDs (PLEDs) have been improved by employing thin doped composition-graded (CG) hydrogenated amorphous silicon–carbide (a-SiC:H) films as carrier injection layers and O₂-plasma treatment on indium–tin-oxide (ITO) transparent electrode, as compared with previously reported ones having doped constant-optical-gap a-SiC:H carrier injection layers. For PLEDs with an n-type a-SiC:H electron injection layer (EIL) only, the electroluminescence (EL) threshold voltage and brightness were improved from 7.3 V, 3162 cd/m² to 6.3 V, 5829 cd/m² (at a current density J = 0.6 A/cm²), respectively, by using the CG technique. The enhancement of EL performance of the CG technique was due to the increased electron injection efficiency resulting from a smoother barrier and reduced recombination of charge carriers at the EIL and MEH-PPV interface. Also, surface modification of the ITO transparent electrode by O₂-plasma treatment was used to further improve the EL threshold voltage and brightness of this PLED to 5.1 V, 6250 cd/m² (at J = 0.6 A/cm²). Furthermore, by employing the CG n[p]-a-SiC:H film as EIL [hole injection layer (HIL)] and O₂-plasma treatment on the ITO electrode, the brightness of PLEDs could be enhanced to 9350 cd/m² (at a J = 0.3 A/cm²), as compared with the 6450 cd/m² obtained from a previously reported PLED with a constant-optical-gap n-a-SiCGe:H EIL and p-a-Si:H HIL.     

Green and blue-green phosphorescent heteroleptic iridium complexes containing carbazole-functionalized β-diketonate for non-doped organic light-emitting diodes

Two novel iridium complexes both containing carbazole-functionalized β-diketonate, Ir(ppy)₂(CBDK) [bis(2-phenylpyridinato-N,C²)iridium(1-(carbazol-9-yl)-5,5-dimethylhexane-2,4-diketonate)], Ir(dfppy)₂(CBDK) [bis(2-(2,4-difluorophenyl)pyridinato-N,C²)iridium(1-(carbazol-9-yl)-5,5-dimethylhexane-2,4-diketonate)] and two reported complexes, Ir(ppy)₂(acac) (acac = acetylacetonate), Ir(dfppy)₂(acac) were synthesized and characterized. The electrophosphorescent properties of non-doped device using the four complexes as emitter, respectively, with a configuration of ITO/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-diphenyl-4,4′-diamine (NPB) (20 nm)/iridium complex (20 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (5 nm)/tris(8-hydroxyquinoline)aluminum (AlQ) (45 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) were examined. In addition, a most simplest device, ITO/Ir(ppy)₂(CBDK) (80 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm), and two double-layer devices with configurations of ITO/NPB (30 nm)/Ir(ppy)₂(CBDK) (30 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) and ITO/Ir(ppy)₂(CBDK) (30 nm)/AlQ (30 nm)/Mg_0.9Ag_0.1 (200 nm)/Ag (80 nm) were also fabricated and examined. The results show that the non-doped four-layer device for Ir(ppy)₂(CBDK) achieves maximum lumen efficiency of 4.54 lm/W and which is far higher than that of Ir(ppy)₂(acac), 0.53 lm/W, the device for Ir(dfppy)₂(CBDK) achieves maximum lumen efficiency of 0.51 lm/W and which is also far higher than that of Ir(dfppy)₂(acac), 0.06 lm/W. The results of simple devices involved Ir(ppy)₂(CBDK) show that the designed complex not only has a good hole transporting ability, but also has a good electron transporting ability. The improved performance of Ir(ppy)₂(CBDK) and Ir(dfppy)₂(CBDK) can be attributed to that the bulky carbazole-functionalized β-diketonate was introduced, therefore the carrier transporting property was improved and the triplet–triplet annihilation was reduced.     

An efficient bis(2-phenylquinoline) (acetylacetonate) iridium(III)-based red organic light-emitting diode with alternating guest:host emitting layers

We report a highly efficient electrophosphorescent bis(2-phenylquinoline) (acetylacetonate) iridium(III) [Ir(2-phq)₂(acac)]-based red organic light-emitting diode. The emission layer consists of a periodic thin layer of guest material of Ir(2-phq)₂(acac) separated by host material of 4,4′-Bis(carbazol-9-yl)biphenyl. The guest and host thicknesses were optimized independently to obtain the best performance. The current efficiency reaches to a maximum of 16.2 cd/A then drops to 15 and 11 cd/A at brightness of 10 and 100 cd/m², respectively. By reducing the thickness of the host layer, the power efficiency was further improved. Device with a maximum power efficiency of 8.3 lm/W was obtained. We also found that the concentration quenching in Ir(2-phq)₂(acac) is dominated by molecular aggregation. Excitonic quenching by radiationless Förster process is miniscule.     

p-Doped p-phenylenediamine-substituted fluorenes for organic electroluminescent devices

Two novel p-phenylenediamine-substituted fluorenes have been designed and synthesized. Their applications as hole injection materials in organic electroluminescent devices were investigated. These materials show a high glass transition temperature and a good hole-transporting ability. It has been demonstrated that the 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped p-phenylene-diamine-substituted fluorenes, in which F4-TCNQ acts as p-type dopant, are highly conducting with a good hole-transporting property. The organic light emitting devices (OLEDs) utilizing these F4-TCNQ-doped materials as a hole injection layer were fabricated and investigated. The pure Alq₃-based OLED device shows a current efficiency of 5.2 cd/A at the current density of 20 mA/cm² and the operation lifetime is 1500 h with driving voltage increasing only about 0.7 mV/h. The device performance and stability of this hole injection material meet the benchmarks for the commercial requirements for OLED materials.     

Charge conduction study of phosphorescent iridium compounds for organic light-emitting diodes application

The charge conduction properties of a series of iridium-based compounds for phosphorescent organic light-emitting diodes (OLEDs) have been investigated by thin-film transistor (TFT) technique. These compounds include four homoleptic compounds: Ir(ppy)₃, Ir(piq)₃, Ir(Tpa-py)₃, Ir(Cz-py)₃, and two heteroleptic compounds Ir(Cz-py)₂(acac) and FIrpic. Ir(ppy)₃, Ir(piq)₃ and FIrpic are commercially available compounds, while Ir(Tpa-py)₃, Ir(Cz-py)₃ and Ir(Cz-py)₂(acac) are specially designed to test their conductivities with respect to the commercial compounds. In neat films, with the exception of FIrpic, all Ir-compounds possess significant hole transporting capabilities, with hole mobilities in the range of about 5 × 10⁻⁶–2 × 10⁻⁵ cm² V⁻¹ s⁻¹. FIrpic, however, is non-conducting as revealed by TFT measurements. We further investigate how Ir-compounds modify carrier transport as dopants when they are doped into a phosphorescent host material CBP. The commercial compounds are chosen for the investigation. Small amounts of Ir(ppy)₃ and Ir(piq)₃ (<10%) behave as hole traps when they are doped into CBP. The hole conduction of the doped CBP films can be reduced by as much as 4 orders of magnitude. Percolating conduction of Ir-compounds occurs when the doping concentrations of the Ir-compounds exceed 10%, and the hole mobilities gradually increase as their values reach those of the neat Ir films. In contrast to Ir(ppy)₃ and Ir(piq)₃, FIrpic does not participate in hole conduction when it is doped into CBP. The hole mobility decreases monotonically as the concentration of FIrpic increases due to the increase of the average charge hopping distance in CBP.     

High efficiency and non-color-changing orange organic light emitting diodes with red and green emitting layers

We report a high performance orange organic light-emitting diode (OLED) where red and green phosphorescent dyes are doped in an exciplex forming co-host as separate red and green emitting layers (EMLs). The OLED shows a maximum external quantum efficiency (EQE) of 22.8%, a low roll-off of efficiency with an EQE of 19.6% at 10,000 cd/m², and good orange color with a CIE coordinate of (0.442, 0.529) and no color change from 1000 to 10,000 cd/m². The exciplex forming co-host system distributes the recombination zone all over the EMLs and reduces the triplet exciton quenching processes.