Effects of self-aligned electroplating Cu pillar/Sn-xAg bump on dense Al lines for chip-to-package connection

Self-aligned electroplating is applied to form the Cu pillar/Sn-Ag bump for semiconductor device packaging, while passivation SiN cracks are usually observed at the bump edge on the bump of the array (BOA). In this paper, the simulation method was used to investigate the mechanism of SiN cracks and then, the bump process was optimized to improve the mechanical properties of the Cu pillar/Sn-Ag bump. It was found that higher reflow rounds could improve the shear strength due to the large degree of contact between the rugged scallop-like shape of the Cu₆Sn₅ and the Sn-Ag solder. The fracture plane cleaved between the Sn-Ag and Cu₆Sn₅ interface is consistent with the simulation results. The hardness of the Sn‒Ag solder is proportional to the reflow rounds, and the amount of Ag₃Sn phase precipitation within the Sn-Ag solder contributes to the hardness value. In contrast, the disadvantage is that thermal residual stress could deteriorate the SiN crack, especially for a BOA structure The study concludes that an optimal bump process, including Sn-2%Ag solders at 260 °C for 30 s, could obtain a high shear strength and appropriate solder hardness without passivated SiN cracking.     

Consideration of temperature and current stress testing on flip chip solder interconnects

This work discusses the experimental set-up and data interpretation for high temperature and current stress tests of flip chip solder joints using the four-point Kelvin measurement technique. The single solder joint resistance responses are measured at four different four-point Kelvin structure locations in a flip chip package. Various temperatures (i.e., 125–165 °C) and electric current (i.e., 0.6–1.0 A) test conditions are applied to investigate the solder joint resistance degradation behavior and its failure processes. Failure criterion of 20% and 50% joint resistance increases, corresponding to solder and interfacial voiding, are employed to evaluate the solder joint electromigration reliability. The absolute resistance value is substantially affected by the geometrical layout of the metal lines in the four-point Kelvin structure, and this is confirmed by finite element simulation.Different current flow directions and strengths yielded different joint resistance responses. The anode joint, where electrons flow from the die to the substrate, usually measured an earlier resistance increase than the cathode joint, where electrons flow in the opposite direction. The change in measured joint resistances can be related to solder and interfacial voiding in the solder joint except for ±1 A current load, where resistance drop mainly attributed to the broken substrate Cu metallization as a result of “hot-spot” phenomenon. The solder joint temperature increases above the oven ambient temperature by ～25 °C, ～40 °C and ～65 °C for 0.6 A, 0.8 A and 1.0 A stress current, respectively. It is found that two-parameter log-normal distribution gives a better lifetime data fitting than the two-parameter Weibull distribution. Regardless of failure criterion used, the anode joint test cells usually calculated a shorter solder joint mean life with a lower standard variation of 0.3–0.6, as compared to the cathode joint test cells with a higher standard variation of 0.8–1.2. For a typical flip chip solder joint construction, electromigration reliability is mainly determined by the under bump metallization consumption and dissolution, with intermetallic compound formation near the die side of an anode joint.     

Interfacial Reaction and Die Attach Properties of Zn-Sn High-Temperature Solders

Interfacial reaction and die attach properties of Zn-xSn (x = 20 wt.%, 30 wt.%, and 40 wt.%) solders on an aluminum nitride–direct bonded copper substrate were investigated. At the interface with Si die coated with Au/TiN thin layers, the TiN layer did not react with the solder and worked as a good protective layer. At the interface with Cu, CuZn₅, and Cu₅Zn₈ IMC layers were formed, the thicknesses of which can be controlled by joining conditions such as peak temperature and holding time. During multiple reflow treatments at 260°C, the die attach structure was quite stable. The shear strength of the Cu/solder/Cu joint with Zn-Sn solder was about 30 MPa to 34 MPa, which was higher than that of Pb-5Sn solder (26 MPa). The thermal conductivity of Zn-Sn alloys of 100 W/m K to 106 W/m K was sufficiently high and superior to those of Au-20Sn (59 W/m K) and Pb-5Sn (35 W/m K).     

Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices

The eutectic Au₈₀Sn₂₀ solder alloy has been applied in semiconductor assemblies and other industries for years. Due to some superior physical properties, Au/Sn alloy gradually becomes one of the best materials for soldering in electronic devices and components packaging but the voids growth in AuSn solder joints is one of the many critical factors governing the solder joint reliability. Voids may degrade the mechanical robustness of the die attach and consequently affect the reliability and thermal conducting performance of the assembly. Severe thermal cycles [− 55 °C/+175 °C] have highlighted degradations in AuSn die attach solder. The inspection of as-prepared die-attachments by X-ray and SEM (observation of cross-section) shows that the initial voids sizes were increased and a propagation of transverse cracks inside the joint between voids has appeared after ageing, it was featured also the existence of the IMC typical scallop-shape morphology with the phase structure of (Ni, Au)₃Sn₂ on as-reflowed joints. In this paper, we evaluate the origin of these degradations and ways to address them.     

Low-temperature low-pressure die attach with hybrid silver particle paste

New types of die attach pastes comprising micron-sized Ag particles hybridized with submicron-sized Ag particles were considered as lead-free die attach materials for SiC power semiconductors. Micron-sized Ag particles in alcohol solvent were prepared by mixing the die attach paste with submicron-sized Ag particles. The alcohol vaporizes completely during sintering and no residue exists in the bonding layer. The Ag layer has a uniform porous structure. The electrical resistivity of the printed tracks decreases below 1 × 10^?5 Ω cm when sintered above 200 °C. When sintered at 200 °C for 30 min, the average resistivity reaches 5 × 10^?6 Ω cm, which is slightly higher than the value obtained by using Ag nanoparticle paste. A SiC die was successfully bonded to a direct bonded copper substrate and the die-shear strength gradually increases with the increase in bonding temperature up to 300 °C. The Ag die attach bond layer was stable against thermal cycles between ?40 °C and 300 °C.     

Mechanical reliability of Sn-rich Au–Sn/Ni flip chip solder joints fabricated by sequential electroplating method

In this study, we evaluated the mechanical reliability of Sn-rich, Au–Sn/Ni flip chip solder bumps by using a sequential electroplating method with Sn and Au. After reflowing, the average diameter of the solder bump was approximately 80 μm and only a (Ni,Au)₃Sn₄ intermetallic compound (IMC) layer was formed at the interface. Due to the preferential consumption of Sn atoms within the solder matrix during aging, the solder matrix was transformed sequentially in the following order: β-Sn and η-phase, η-phase, and η-phase and ε-phase. In the bump shear test, the shear force was not significantly changed despite aging at 150 °C for 1000 h and most of the fractures occurred at the interfaces. The interfacial fracture was significantly related to the formation of brittle IMCs at the interface. The Sn-rich, Au–Sn/Ni flip chip joint was mechanically much weaker than the Au-rich, Au–Sn/Ni flip chip joint. The study results demonstrated that the combination of Sn-rich, Au–Sn solder and Ni under bump metallization (UBM) is not a viable option for the replacement of the conventional, Au-rich, Au–20Sn solder.     

Investigation of soldering process and interfacial microstructure evolution for the formation of full Cu3Sn joints in electronic packaging

Within electronic products, solder joints with common interfacial structure of Cu/IMCs/Sn-based solders/IMCs/Cu cannot be used under high temperature for relatively low melting points of Sn-based solders (200–300 °C). However, there is a trend for solder joints to service under high temperature because of the objective for achieving multi-functionality of electronic products.With the purpose of ensuring that solder joints can service under high temperature, full Cu₃Sn solder joints with the interfacial structure of Cu/Cu₃Sn/Cu can be a substitute due to the high melting point of Cu₃Sn (676 °C). In this investigation, soldering process parameters were optimized systematically in order to obtain such joints. Further, interfacial microstructure evolution during soldering was analyzed. The soldering temperature of 260 °C, the soldering pressure of 1 N and the soldering time of 5 h were found to be the optimal parameter combination. During soldering of 260 °C and 1 N, the Cu₆Sn₅ precipitated first in a planar shape at Cu-Sn interfaces, which was followed by the appearance of planar Cu₃Sn between Cu and Cu₆Sn₅. Then, the Cu₆Sn₅ at opposite sides continued to grow with a transition from a planar shape to a scallop-like shape until residual Sn was consumed totally. Meanwhile, the Cu₃Sn grew with a round-trip shift from a planar shape to a wave-like shape until the full Cu₃Sn solder joint was eventually formed at 5 h. The detailed reasons for the shape transformation in both Cu₆Sn₅ and Cu₃Sn during soldering were given. Afterwards, a microstructure evolution model for Cu-Sn-Cu sandwich structure during soldering was proposed. Besides, it was found that no void appeared in the interfacial region during the entire soldering process, and a discuss about what led to the formation of void-free joints was conducted.     

Sn addition on the tensile properties of high temperature Zn–4Al–3Mg solder alloys

The Zn–4Al–3Mg based solder alloy is a promising candidate to replace the conventional Pb–5Sn alloy in high-temperature electronic packaging. In this study, the tensile properties of Zn–4Al–3Mg–xSn alloys (x = 0, 6.8 and 13.2 wt.%) at high temperatures (e.g., 100 °C, and 200 °C) were investigated. It was found that the uniaxial tensile strength (UTS) of Zn–4Al–3Mg–xSn solder alloys all decrease monotonously with the increment of temperature. The elongation ratio at 100 °C is superior to that at room temperature whereas follows a significant drop at 200 °C. The microstructure observations show that a typical brittle fracture of Zn–4Al–3Mg alloy occurs at room temperature and 200 °C under normal tension, whereas a ductile fracture is found at 100 °C. The 6.8 wt.% Sn addition in Zn–4Al–3Mg alloy causes a dramatic decrease of yield strength, and a slight deterioration of the ductility.     

Effect of elevated temperature on PCB responses and solder interconnect reliability under vibration loading

In this paper, vibration tests are conducted to investigate the influence of temperature on PCB responses. A set of combined tests of temperature and vibration is designed to evaluate solder interconnect reliability at 25 °C, 65 °C and 105 °C. Results indicate that temperature significantly affects PCB responses, which leads to remarkable differences in vibration loading intensity. The PCB eigenfrequency shifts from 290 Hz to 276 Hz with an increase of test temperature from 25 °C to 105 °C, during which the peak strain amplitude is almost the same.Vibration reliability of solder interconnects is greatly improved with temperature rise from 25 °C to 105 °C. Mean time to failure (MTTF) of solder joint at 65 °C and 105 °C is increased by 70% and 174% respectively compared to that of solder joint at 25 °C. Temperature dominates crack propagation path of solder joint during vibration test. Crack propagation path is changed from the area between intermetallic compound (IMC) layer and Cu pad to the bulk solder with temperature increase.     

Vertical InGaN light-emitting diodes with Ag paste as bonding layer

Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140 °C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au–Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au–Sn eutectic bonding layer.     

Failure and stress analysis of through-aluminum-nitride-via substrates during thermal reliability tests for high power LED applications

The objective of this study is to evaluate the reliability of through-aluminum-nitride-via (TAV) substrate by comparing those experimental results with the finite element simulation associated with measurements of aluminum nitride (AlN) strength and the thermal deformation of Cu/AlN bi-material plate. Two reliability tests for high-power LED (Light emitting diode) applications are used in this study: one is a thermal shock test from − 40 °C to 125 °C, the other is a pressure cook test. Also, the strength of AlN material is measured by using three-point bending test and point load test. The reliability results show that TAV substrates with thicker Cu films have delamination and cracks after the thermal shock test, but there are no failure being found after the pressure cook test. The determined strengths of AlN material are 350 MPa and 650 MPa from three-point bending test and point load test, respectively. The measurement of thermal deformation shows that the bi-material plate has residual-stress change after the solder reflow process, also indicating that a linear finite element model with the stress-free temperature at 80 °C can reasonably represent the stress state of the thermal shock test from − 40 °C to 125 °C without considering Cu nonlinear effect. The further results of the finite element simulation associated with strength data of AlN material have successfully described those of the reliability test.     

Interaction Between Ni and Cu Across 95Pb-5Sn High-Lead Layer

Ni/95Pb-5Sn/Cu ternary diffusion couples were used to investigate the cross-interaction between Ni and Cu across a layer of 95Pb-5Sn solder. High-lead solder layers with a thickness of 100 μm or 400 μm were electroplated over Cu foils. A pure Ni layer (20 μm) was then deposited over the as-deposited high-lead solder surface. The diffusion couples were then aged at 150°C to 250°C for different periods of time. With this technique, the diffusion couples were assembled without experiencing any high-temperature process such as reflow, which would have accelerated the interaction and caused difficulties in analysis. This study revealed that massive spalling also occurred during aging even though reflow was not used. The massive spalling began with the formation of microvoids. When the microvoids had congregated into large enough voids, intermetallic compounds (Cu₃Sn) started to spall from the interface. This spalling phenomenon occurred sooner with increasing temperature and decreasing solder volume.     

Development of chip-on-flex bonding using Sn-based bumps and non-conductive adhesive

We developed a reliable and low cost chip-on-flex (COF) bonding technique using Sn-based bumps and a non-conductive adhesive (NCA). Two types of bump materials were used for the bonding process: Sn bumps and Sn–Ag bumps. The bonding process was performed at 180 °C for 10 s using a thermo-compression bonder after dispensing the NCA. Sn-based bumps were easily deformed to contact Cu pads during the bonding process. A thin layer of Cu₆Sn₅ intermetallic compound was observed at the interface between Sn-based bumps and Cu pads. After bonding, electrical measurements showed that all COF joints had very low contact resistance, and there were no failed joints. To evaluate the reliability of COF joints, high temperature storage tests (150 °C, 1000 h), thermal cycling tests (−25 °C/+125 °C, 1000 cycles) and temperature and humidity tests (85 °C/85% RH, 1000 h) were performed. Although contact resistance was slightly increased after the reliability test, all COF joints passed failure criteria. Therefore, the metallurgical bond resulted in good contact and improved the reliability of the joints.     

Discrete phase method particle simulation of ultra-fine package assembly with SAC305-TiO2 nano-reinforced lead free solder at different weighted percentages

This paper presents a 3D numerical simulation of nano-reinforced lead (Pb)-free solder at the ultra-fine joint component for 01005 capacitor with dimension of 0.2 × 0.2 × 0.4 mm³. The nano-reinforced particles introduced in the Sn-3.0Ag-0.5Cu (SAC305) solder is titanium oxide (TiO₂) nanoparticles with approximate diameter of ≈ 20 nm at different weight percentages of 0.01, 0.05 and 0.15 wt% respectively. The 3D model developed is based on the reflow thermal profile of nano-reinforced Pb-free solder in the wetting zone temperature of 217 °C–239 °C. A two way interactions utilizing both volume of fluid method (VOF) and discrete phase method (DPM) are introduced in the current study. The study effectively shows the distribution of the nanoparticles as it is being doped in the molten solder after undergoing soldering process. Based on the findings, it was shown that good agreement can be seen between experimental data obtained using High Resolution Transmission Electron Microscope (HRTEM) system as compared to multiphase DPM based simulation. At weight percentage of SAC305 + 0.05% TiO₂ nanoparticles, the nanoparticles are well distributed. The fillet height of nano-reinforced solder also meets the minimum requirement for 01005 capacitor. Additionally, as the weight percentage of the doped nanoparticles increases, the time required for the formation of wetted solder also increases. In terms of the velocity and pressure distribution of the nano-reinforced lead (Pb)-free solder, higher weight percentage of doped nanoparticles have higher velocity distribution and lower pressure distributions.     

Effect of nano Al2O3 particles doping on electromigration and mechanical properties of Sn–58Bi solder joints

In the present study, the effect of Al₂O₃ nanoparticles on performances of Sn–58Bi solder were investigated in aspects of electro-migratio, shear strength and microhardness. The experimental results show that the Al₂O₃ nanoparticles significantly improved microstructure and mechanical performances of solder joints. With the addition of 0.5 wt% Al₂O₃, the intermetallic compounds (IMC) reduced from 2.5 μm to 1.27 μm after 288 aging hours at 85 °C. Furthermore, after electromigration test under a current density of 5 × 10³ A/cm² at 85 °C, Bi-rich layers formed at the anode side of both Al₂O₃ doped and plain solder. Moreover, the addition of Al₂O₃ nanoparticles reduced the mean thickness of Bi-rich layer. In addition, the growth rate of the IMC layer of Al₂O₃ doped solder decreased by 8% compared with the plain solder. Besides, the Al₂O₃ doped solder exhibited better performance than plain solder in microhardness after different aging times. While, the addition of Al₂O₃ significantly impeded the degradation of the shear strength of solder joint after aging for 48 and 288 h. Furthermore, it was worth noting that the fracture surface of doped solder showed a typical rough and ductile structure. However, plain solder exhibited a relatively smooth and fragile surface.     

Growth competition between layer-type and porous-type Cu3Sn in microbumps

Experimental study of growth competition between the co-existing layer-type and porous-type Cu₃Sn in solder microbumps of Cu/SnAg/Cu is reported. The thickness of the SnAg solder is about 14 μm and the Cu column on both sides is 20 μm. Upon wetting-reflow, the solder is reacted completely to form CuSn intermetallic compounds in a multi-layered structure of Cu/Cu₃Sn/Cu₆Sn₅/Cu₃Sn/Cu. Upon further annealing at 220 °C and 260 °C, we obtain Cu/Cu₃Sn/porous Cu₃Sn/Cu₃Sn/Cu, in which both types of Cu₃Sn co-exist and form an interface. In the layer-type growth, we assume Cu to be the dominant diffusing species, coming from the Cu column. The Cu reacts with Cu₆Sn₅ to grow the Cu₃Sn layer. In the porous-type growth, we assume Sn to be the dominant diffusing species, coming from the depletion of Sn in Cu₆Sn₅. The depleted Cu₆Sn₅ transforms to the porous-type Cu₃Sn. At the same time, the Sn diffuses to the side-wall of Cu column to form a coating of Cu₃Sn. Experimental observations of 3-dimensional distribution of voids in the porous-type Cu₃Sn are performed by synchrotron radiation tomography; the voids are interconnected for the out-diffusion of Sn. The competing growth between the layer-type and the porous-type Cu₃Sn is analyzed.     

Effect of trace platinum additions on the interfacial morphology of Sn–3.8Ag–0.7Cu alloy aged for long hours

While the Sn–Ag–Cu (SAC) family of solders are considered good candidate as lead-free solder replacement materials, their relatively short processing history and application result in a host of materials as well as reliability problems. For good metallurgical bonding and electrical connection, a thin, even layer of intermetallic compound (IMC) is required but excessive growth of the IMC layer will cause various reliability problems. This is especially critical for miniaturized solder pitches in very large scale integration circuits. This work adopts the composite approach of adding 0.15 and 0.30 wt.% of Pt into Sn–3.8Ag–0.7Cu alloy to study the effect of these additions to the IMC layer thickness between the solder and substrate. Alloys were isothermally aged at 150 °C for up to 1000 h to observe contribution of Pt in suppressing excessive IMC growth. It was found that when more Pt was added to the alloy, the IMC layer became more even and continuous. Voids and IMC layer thickness were reduced. This is attributed to the role of Pt in replacing Cu in the solder and thus impeding excessive diffusion.     

Effects of salt spray test on lead-free solder alloy

This paper starts with a bibliographic survey about solder corrosion and experimental results of the corrosion on lead-free solder balls during salt spray tests. Focus is made on the SnAgCu solder alloy. Ball Grid Array assemblies and “Package on Package” components were put up to 96 h in a salt spray chamber at 35 °C with 5% sodium chloride (NaCl) aqua according to the ASTM B117-09 standard. The weight is measured during the test. The solder alloys are observed and analysed along the ageing with optical microscope and scanning electron microscope equipped with an energy-dispersive x-ray system. The solder alloy deterioration is visible after 48 h. The microstructure is analysed in order to determine the corroded residues found on the surface solder balls after the salt spray test. Tin oxychloride (Sn(OH)Cl) is found on BGA solder joints after reflow and on PoP solder balls before reflow. The size of the solder balls has an influence on the corrosion state. Finally a method is developed in order to measure the corrosion product growth on the same sample during the salt environment exposure.     

Effect of type of thermo-mechanical excursion on growth of interfacial intermetallic compounds in Cu/Sn-Ag-Cu solder joints

This study reports the effect of different types of thermo-mechanical excursion (TME) on growth of intermetallic compound (IMC) layer formed at the interface of Sn-3.0%Ag-0.5%Cu solder and Cu substrate. 1 mm thick solder joints were prepared by reflowing at 270 °C for either 60 or 90 s. Solder joints were then exposed to one of the following TME: (i) isothermal aging at 60 °C for 48, 96 and 144 h, (ii) thermal cycling between − 25 and 125 °C for 100, 200 and 400 cycles, and (iii) thermo-mechanical cycling between − 25 and 125 °C for 100, 200 and 400 cycles, wherein a shear strain of 10% per cycle was imposed on the joint. Finite element analysis (FEA) was performed to ascertain the effects of imposed shear strain and volumetric expansion due to the formation of IMC on the stress field in the solder joint. Irrespective of the type of TME, the thickness of the IMC layer increased with time. However, IMC thickness increased relatively more rapidly under thermo-mechanical cycling condition, indicating strain enhanced coarsening of the interfacial IMC layer. FEA showed that high stresses were generated in the IMC layer and near solder-IMC interface due to the formation of IMC layer as well as imposed external strain, which might then not only enhance the IMC growth kinetics, but also affect the morphology of the IMC layer.     

Development of reliable low temperature wafer level hermetic bonding using composite seal joint

A reliable composite metal seal comprising both intermetallic compounds (IMC) and solder joints, which are formed by transient liquid phase bonding and soldering respectively, is proposed and demonstrated in wafer level bonding experiments. Hermetic sealing is demonstrated on 8-in. wafers using low volume Cu/Sn materials at process temperatures as low as 280 °C. It is shown that the composite seal is stable when subjected to temperatures of 250 °C, and that it provides better hermeticity and reliability than an IMC seal alone.