Investigation of n-ohmic contact of vertical GaN-based light-emitting diodes on graphite substrate with Ag-In bonding

Vertical light-emitting diodes (VLEDs) were successfully transferred from a GaN-based sapphire substrate to a graphite substrate by using low-temperature and cost-effective Ag-In bonding, followed by the removal of the sapphire substrate using a laser lift-off (LLO) technique. One reason for the high thermal stability of the AgIn bonding compounds is that both the bonding metals and Cr/Au n-ohmic contact metal are capable of surviving annealing temperatures in excess of 600 °C. Therefore, the annealing of n-ohmic contact was performed at temperatures of 400 °C and 500 °C for 1 min in ambient air by using the rapid thermal annealing (RTA) process. The performance of the n-ohmic contact metal in VLEDs on a graphite substrate was investigated in this study. As a result, the final fabricated VLEDs (chip size: 1000 µm×1000 µm) demonstrated excellent performance with an average output power of 538.64 mW and a low operating voltage of 3.21 V at 350 mA, which corresponds to an enhancement of 9.3% in the light output power and a reduction of 1.8% in the forward voltage compared to that without any n-ohmic contact treatment. This points to a high level of thermal stability and cost-effective Ag-In bonding, which is promising for application to VLED fabrication.     

Effect of type of thermo-mechanical excursion on growth of interfacial intermetallic compounds in Cu/Sn-Ag-Cu solder joints

This study reports the effect of different types of thermo-mechanical excursion (TME) on growth of intermetallic compound (IMC) layer formed at the interface of Sn-3.0%Ag-0.5%Cu solder and Cu substrate. 1 mm thick solder joints were prepared by reflowing at 270 °C for either 60 or 90 s. Solder joints were then exposed to one of the following TME: (i) isothermal aging at 60 °C for 48, 96 and 144 h, (ii) thermal cycling between − 25 and 125 °C for 100, 200 and 400 cycles, and (iii) thermo-mechanical cycling between − 25 and 125 °C for 100, 200 and 400 cycles, wherein a shear strain of 10% per cycle was imposed on the joint. Finite element analysis (FEA) was performed to ascertain the effects of imposed shear strain and volumetric expansion due to the formation of IMC on the stress field in the solder joint. Irrespective of the type of TME, the thickness of the IMC layer increased with time. However, IMC thickness increased relatively more rapidly under thermo-mechanical cycling condition, indicating strain enhanced coarsening of the interfacial IMC layer. FEA showed that high stresses were generated in the IMC layer and near solder-IMC interface due to the formation of IMC layer as well as imposed external strain, which might then not only enhance the IMC growth kinetics, but also affect the morphology of the IMC layer.     

Effect of trace platinum additions on the interfacial morphology of Sn–3.8Ag–0.7Cu alloy aged for long hours

While the Sn–Ag–Cu (SAC) family of solders are considered good candidate as lead-free solder replacement materials, their relatively short processing history and application result in a host of materials as well as reliability problems. For good metallurgical bonding and electrical connection, a thin, even layer of intermetallic compound (IMC) is required but excessive growth of the IMC layer will cause various reliability problems. This is especially critical for miniaturized solder pitches in very large scale integration circuits. This work adopts the composite approach of adding 0.15 and 0.30 wt.% of Pt into Sn–3.8Ag–0.7Cu alloy to study the effect of these additions to the IMC layer thickness between the solder and substrate. Alloys were isothermally aged at 150 °C for up to 1000 h to observe contribution of Pt in suppressing excessive IMC growth. It was found that when more Pt was added to the alloy, the IMC layer became more even and continuous. Voids and IMC layer thickness were reduced. This is attributed to the role of Pt in replacing Cu in the solder and thus impeding excessive diffusion.     

Non-conductive film with Zn-nanoparticles (Zn-NCF) for 40 μm pitch Cu-pillar/Sn–Ag bump interconnection

Non-conductive film with Zn nano-particles (Zn-NCF) is an effective solution for fine-pitch Cu-pillar/Sn–Ag bump interconnection in terms of manufacturing process and interfacial reliability. In this study, NCFs with Zn nano-particles of different acidity, viscosity, and curing speed were formulated and diffused Zn contents in the Cu pillar/Sn–Ag bumps were measured after 3D TSV chip-stack bonding. Amount of Zn diffusion into the Cu pillar/Sn–Ag bumps increased as the acidity of resin increased, as the viscosity of resin decreased, as the curing speed of resin decreased, and as the bonding temperature increased. Diffusion of Zn nano-particles into the Cu pillar/Sn–Ag bumps are maximized when the resin viscosity became lowered and the solder oxide layer was removed. To analyze the effects of Zn-NCF on IMC reduction, IMC height depending on aging time was measured and corresponding activation energies for IMC growth were calculated. For the evaluation of joint reliabilities, test vehicles were bonded using NCFs with 0 wt%, 1 wt%, 5 wt%, and 10 wt% of Zn nano-particles and aged at 150 °C up to 500 h. NCF with 10 wt% Zn nano-particle showed remarkable suppression in Cu₆Sn₅ and (Cu,Ni)₆Sn₅ IMC compared to NCFs with 0 wt%, 1 wt%, and 5 wt% of Zn nano-particles. However, in terms of Cu₃Sn IMC suppression, which is the most critical goal of this experiment NCFs with 1 wt%, 5 wt%, and 10 wt% showed an equal amount of IMC suppression. As a result, it was successfully demonstrated that the suppression of Cu–Sn IMCs was achieved by the addition of Zn nano-particles in the NCFs resulting an enhanced reliability performance in the Cu/Sn–Ag bumps bonding in 3D TSV interconnection.     

High temperature ageing of microelectronics assemblies with SAC solder joints

In some applications, electronic systems are expected to operate at high ambient temperature (e.g. 150 °C). In this paper, we investigate the failure mechanism and microstructure evolution of solder-free (SAC) solder joints at a maximum temperature of 175 °C. It is found that no new failure mechanisms are triggered, and that ageing tests for solder can be accelerated at 175 °C. In particular, the growth rate of the interfacial intermetallic compound (IMC) is found to be consistent with that observed at lower temperatures.     

Development of chip-on-flex bonding using Sn-based bumps and non-conductive adhesive

We developed a reliable and low cost chip-on-flex (COF) bonding technique using Sn-based bumps and a non-conductive adhesive (NCA). Two types of bump materials were used for the bonding process: Sn bumps and Sn–Ag bumps. The bonding process was performed at 180 °C for 10 s using a thermo-compression bonder after dispensing the NCA. Sn-based bumps were easily deformed to contact Cu pads during the bonding process. A thin layer of Cu₆Sn₅ intermetallic compound was observed at the interface between Sn-based bumps and Cu pads. After bonding, electrical measurements showed that all COF joints had very low contact resistance, and there were no failed joints. To evaluate the reliability of COF joints, high temperature storage tests (150 °C, 1000 h), thermal cycling tests (−25 °C/+125 °C, 1000 cycles) and temperature and humidity tests (85 °C/85% RH, 1000 h) were performed. Although contact resistance was slightly increased after the reliability test, all COF joints passed failure criteria. Therefore, the metallurgical bond resulted in good contact and improved the reliability of the joints.     

Effects of acrylic adhesives property and optimized bonding parameters on Sn58Bi solder joint morphology for flex-on-board assembly

Acrylic resin with a fast curable property has been used in low temperature ACFs applications. However, its poor thermo-mechanical property was a concern for solder ACFs applications. In this study, a novel thermomechanical analysis (TMA) method was introduced to measure its polymer rebound amounts due to pressures removal after a thermo-compression (TC) bonding process. Polymer resin was laminated between two silicon chips (7 1 7 mm²), and then a compressive mode TMA measurement was done on the prepared samples. Constant compressive pressures were applied until the temperature was gradually increased to target temperature, and the forces were removed at the target temperatures. The polymer rebound was measured by monitoring the z-axis dimension change after the compressive forces was removed. In addition, the effects of bonding temperatures (from 150 to 250 °C) and the bonding pressures (1, 2 and 3 MPa) on the SnBi58 (139 °C melting point) solder joints morphologies and joint resistances were evaluated to investigate acrylic resin property and find out the optimized bonding conditions for low Tg acrylic-based solder ACFs applications.     

Effect of elevated temperature on PCB responses and solder interconnect reliability under vibration loading

In this paper, vibration tests are conducted to investigate the influence of temperature on PCB responses. A set of combined tests of temperature and vibration is designed to evaluate solder interconnect reliability at 25 °C, 65 °C and 105 °C. Results indicate that temperature significantly affects PCB responses, which leads to remarkable differences in vibration loading intensity. The PCB eigenfrequency shifts from 290 Hz to 276 Hz with an increase of test temperature from 25 °C to 105 °C, during which the peak strain amplitude is almost the same.Vibration reliability of solder interconnects is greatly improved with temperature rise from 25 °C to 105 °C. Mean time to failure (MTTF) of solder joint at 65 °C and 105 °C is increased by 70% and 174% respectively compared to that of solder joint at 25 °C. Temperature dominates crack propagation path of solder joint during vibration test. Crack propagation path is changed from the area between intermetallic compound (IMC) layer and Cu pad to the bulk solder with temperature increase.     

Effect of substrate temperature on the properties of ZnO thin films prepared by spray pyrolysis

Sprayed ZnO films were grown on glass at different substrate temperatures from 200 °C to 500 °C and their structural, optical and electrical properties were investigated. All films are polycrystalline with hexagonal wurtzite structure. ZnO films at substrate temperatures above 400 °C appear to be better crystalized with (002) plane as preferential orientation. Optical transmission spectrum shows that ZnO films have high transmission (above 80%) in visible region for substrate temperatures above 400 °C. Photoluminescence spectra at room temperature show an ultraviolet emission and two visible emissions at 2.82 eV and 2.37 eV. The resistivity of ZnO films increases with increasing substrate temperatures (above 400 °C). The ZnO film deposited at 400 °C shows highest figure of merit.     

Thermal desorption of Ge native oxides and loss of Ge from the surface

The authors have identified oxidation and desorption processes of Ge native oxide by chemical bonding states measured by X-ray photoemission spectroscopy. Ge oxidation occurs at the temperatures of 450–500 °C in an oxidizing ambient. Ge desorption in nitrogen ambient is observed at the temperatures of 500–550 °C, which is higher than the oxidation temperature by 50 °C. Combined oxidation and desorption processes proceed subsequently and cause a loss of Ge from the surface when Ge is annealed in oxidizing ambient at a temperature higher than desorption temperature. The surface loss is avoided when Ge is annealed with SiO₂ cap layer in an identical annealing condition.     

Insight into the charge transport and degradation mechanisms in organic transistors operating at elevated temperatures in air

Operational stability of organic devices at above-room-temperatures in ambient environment is of imminent practical importance. In this report, we have investigated the charge transport and degradation mechanisms in pentacene based organic field effect transistors (OFETs) operating in the temperatures ranging from 25 °C to 150 °C under ambient conditions. The thin film characterizations techniques (X-ray photoelectron spectroscopy, X-ray diffraction and atomic force microscopy) were used to establish the structural and chemical stability of pentacene thin films at temperatures up to 150 °C in ambient conditions. The electrical behavior of OFETs varies differently in different temperature bracket. Mobility, at temperatures below 110 °C, is found to be thermally activated in presence of traps and temperature independent in absence of traps. At temperatures above 110 °C mobility degrades due to polymorphism in pentacene or interfacial properties. The degradation of mobility is compensated with the decrease in threshold voltage at high temperatures and OFETs are operational at temperatures as high as 190 °C. 70 °C has been identified as the optimum temperature of operation for our OFETs where both device behavior and material properties are stable enough to ensure sustainable performance.     

High thermal annealing effect on structural and optical properties of ZnO–SiO2 nanocomposite

The effect of annealing temperature on photoluminescence (PL) of ZnO–SiO₂ nanocomposite was investigated. The ZnO–SiO₂ nanocomposite was annealed at different temperatures from 600 °C to 1000 °C with a step of 100 °C. High Resolution Transmission Electron Microscope (HR-TEM) pictures showed ZnO nanoparticles of 5 nm are capped with amorphous SiO₂ matrix. Field Emission Scanning Electron Microscope (FE-SEM) pictures showed that samples exhibit spherical morphology up to 800 °C and dumbbell morphology above 800 °C. The absorption spectrum of ZnO–SiO₂ nanocomposite suffers a blue-shift from 369 nm to 365 nm with increase of temperature from 800 °C to 1000 °C. The PL spectrum of ZnO–SiO₂ nanocomposite exhibited an UV emission positioned at 396 nm. The UV emission intensity increased as the temperature increased from 600 °C to 700 °C and then decreased for samples annealed at and above 800^°C. The XRD results showed that formation of willemite phase starts at 800 °C and pure willemite phase formed at 1000 °C. The decrease of the intensity of 396 nm emission peak at 900 °C and 1000 °C is due to the collapse of the ZnO hexagonal structure. This is due to the dominant diffusion of Zn into SiO₂ at these temperatures. At 1000 °C, an emission peak at 388 nm is observed in addition to UV emission of ZnO at 396 nm and is believed to be originated from the willemite.     

Effect of annealing temperature on optical and electrical properties of lead sulfide thin films

Lead sulfide (PbS) thin films with 150 nm thickness were prepared onto ultra-clean quartz substrate by the RF-sputtering deposition method. Deposited thin films of PbS were annealed at different temperatures 100 °C, 150 °C, 200 °C, 250 °C and 300 °C. X-ray diffraction pattern of thin films revealed that thin films crystallized at 150 °C. Crystalline thin films had cubic phase and rock salt structure. The average crystallite size of crystalline thin films was 22 nm, 28 nm and 29 nm for 150 °C, 200 °C and 250 °C respectively. From 150 °C to 250 °C increase in annealing temperature leads to increase in crystallite arrangement. FESEM images of thin films revealed that crystallite arrangement improved by increasing annealing temperature up to 250 °C. Increase in DC electrical conductivity by increasing temperature confirmed the semiconductor nature of crystalline thin films. Increase in dark current by increasing annealing temperature showed the effect of crystallite arrangement on carrier transport. Photosensitivity decreased by increasing annealing temperature for crystalline thin films that it was explained at the base of thermal quenching of photoconductivity and adsorption of oxygen at the surface of thin films that leads to the formation of PbO at higher temperatures.     

Low-temperature low-pressure die attach with hybrid silver particle paste

New types of die attach pastes comprising micron-sized Ag particles hybridized with submicron-sized Ag particles were considered as lead-free die attach materials for SiC power semiconductors. Micron-sized Ag particles in alcohol solvent were prepared by mixing the die attach paste with submicron-sized Ag particles. The alcohol vaporizes completely during sintering and no residue exists in the bonding layer. The Ag layer has a uniform porous structure. The electrical resistivity of the printed tracks decreases below 1 × 10^?5 Ω cm when sintered above 200 °C. When sintered at 200 °C for 30 min, the average resistivity reaches 5 × 10^?6 Ω cm, which is slightly higher than the value obtained by using Ag nanoparticle paste. A SiC die was successfully bonded to a direct bonded copper substrate and the die-shear strength gradually increases with the increase in bonding temperature up to 300 °C. The Ag die attach bond layer was stable against thermal cycles between ?40 °C and 300 °C.     

Design,development and reliability testing of a low power bridge-type micromachined hotplate

In this paper, the development and reliability of a platinum-based microheater with low power consumption are demonstrated. The microheater is fabricated on a thin SiO₂ bridge-type suspended membrane supported by four arms. The structure consists of a 0.6 μm-thick SiO₂ membrane of size 50 μm × 50 μm over which a platinum resistor is laid out. The simulation of the structure was carried out using MEMS-CAD Tool COVENTORWARE. The platinum resistor of 31.0 Ω is fabricated on SiO₂ membrane using lift-off technique. The bulk micromachining technique is used to create the suspended SiO₂ membrane. The temperature coefficient of resistance (TCR) of platinum used for temperature estimation of the hotplate is measured and found to be 2.2 × 10⁻³/°C. The test results indicate that the microhotplate consumes only 11.8 mW when heated up to 400 °C. For reliability testing, the hotplate is continuously operated at higher temperatures. It was found that at 404 °C, 508 °C and 595 °C, the microhotplate continuously operated up to 16.5 h, 4.3 h and 4 min respectively without degrading its performance. It can sustain at least 53 cycles pulse-mode of operation at 540 °C with ultra-low resistance and temperature drifts. The structure has maximum current capability of 19.06 mA and it can also sustain the ultrasonic vibration at least for 30 min without any damage.     

Phase transformation-dependent sensing performance of multi-walled carbon nanotube–alumina nanocomposite-based gas sensors

Alumina (Al₂O₃) exists in three different phases having different physical properties. In view of this fact, a systematic study has been carried out for the first time to investigate how its various phases influence the sensing performance of a MWCNTs–alumina nanocomposite based trace level gas sensor. A series of composite sensing film were prepared by dispersing MWCNTs in alumina solution followed by a sol–gel process, where the phase of alumina is controlled by specific temperatures set for an annealing process. The analysis revealed that porosity as well as the surface area varies from phase to phase in the composite film and it is the key factor which governs the sensing performance. Brunaur, Emmet and Teller (BET) analysis showed the significant increase in specific surface area of the composite film when boehmite (β-phase) was transformed into γ-phase. X-ray diffraction (XRD) results confirmed the presence of γ-, mixed δ- θ- and α-alumina phases when the annealing temperature of the composite film raised from room temperature to 450 °C, 800 °C and 1000 °C respectively. Field emission scanning electron microscopy (FESEM), BET and Atomic force microscopy (AFM) techniques were employed to examine the resultant porous structure and surface area of the annealed composite films in various phases. The composite having γ-alumina phase (annealed at 450 °C) was found to have maximum response, where the composite having α-alumina phase (annealed at 1000 °C) had the least.     

Customized glass sealant for ceramic substrates for high temperature electronic application

This study investigates the ceramic to ceramic bonding, using composite glass frit as the binding layer that is able to tolerate a high temperature environment for ruggedized microelectronic applications. Shear strength measurements were carried out at both room and high temperature (i.e. 250 °C) to evaluate room and high temperature performance of the joints. The glass joints in both the Al₂O₃/glass/Al₂O₃ and AlN/glass/AlN systems maintained their integrity even when shear-tested at 250 °C. The results of the mechanical and microstructural characterizations demonstrate that Bi-based two phase glass frit bonding is an effective ceramic bonding method for harsh-environment electronic packaging.     

Solderless bonding with nanoporous copper as interlayer for high-temperature applications

The Cu₄₀Al₆₀ alloy has been developed as the precursor alloy to fabricate nanoporous copper (NPC) sheets through chemical dealloying in 1.6 mol/L dilute hydrochloric acid solution at various temperatures. A nanoporous structure with uniform pore distribution and size formed after the bath temperature exceeded 80 °C. The CuCu interconnection was achieved by inserting the NPC sheet as an interlayer and reflowing without solder under a pressure of 10 MPa. After bonding, the thickness of NPC layer was greatly reduced and the porous structure was densified. The average shear strength of the bondlines was measured to be 22.10 MPa, and the bondlines exhibit a low electrical resistivity of 9.65 μΩ·cm. The Vickers hardness and shear strength of the bondline increased after aging at 150 °C for different time due to the densified porous structure. This work demonstrated that the NPC sheets can be used to achieve the CuCu interconnection, which is a potential bonding technology for power devices operating at high temperature.     

Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition

n-ZnO/p-Si heterojunctions were grown by atomic layer deposition (ALD) on (100) p-Si substrates at different growth temperatures in the range of ~100–250 °C. The current-voltage characterization of all the heterojunctions showed typical rectifying behavior, a true signature of a p-n junction diode. The diode grown at 100 °C were having significantly lower reverse saturation current (~21 nA) and high rectification factor (~120) compared to those grown at relatively higher temperatures such as 200 or 250 °C. From capacitance-voltage measurements, it was found that the depletion width in the ZnO side of n-ZnO/p-Si diode was maximum (~60 nm) for the diode grown at 100 °C and decreased gradually to ~3 nm for the diodes grown at high temperatures of 250 °C. The electron concentration in ZnO films was found to increase significantly on increasing the growth temperature from ~100 to 250 °C. The junction capacitance also showed an increasing trend with increase in the growth temperature. The variation of diode parameters with growth temperature has been discussed in terms of carrier concentration in ZnO films and associated growth mechanisms of the ALD. Such low temperature grown n-ZnO/p-Si diodes with lower reverse saturation current and large depletion width may be suitable for photo detection applications.     

Empirical prediction model for Li/SOCl2 cells based on the accelerated degradation test

The empirical prediction model of residual capacity (Cap) for D-size Li/SOCl₂ cells has been developed and validated based on the accelerated degradation test (ADT) data. In this experiment, a series of constant storage temperatures (25 °C, 55 °C, 70 °C, and 85 °C) was selected and the residual capacity of each cell was monitored continuously during the aging test. The model was established by fitting twice. Firstly, time dependence of Cap (t, T) was investigated. Secondly, the generalized model of residual capacity was built. The prediction model, as a function of storage time and temperature, can precisely predict the value of residual capacity. The generalized empirical model of Cap, involving two aging processes, is valid for the degradation condition of temperatures from 25 °C to 70 °C. The first aging process completed rapidly within 7 days. The second aging process was accelerated by temperature with time^1/2 kinetics. For the cells stored at 85 °C, another failure mechanism may exist based on the departure of linear fitting coefficients.