Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V_oc), short-circuit current density (J_sc), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm² heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V_oc of 690 mV, J_sc of 33.62 mA/cm², and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells.     

Electrical transport characteristics of Au/n-GaN Schottky diodes

The current–voltage measurements were performed in the temperature range (80–300 K) on Au/ n-GaN Schottky barrier type diodes. The Schottky diode shows non-ideal I(V_G) behaviour with ideality factors n equals to 1.18 and 1.81 at 300 K and 80 K, respectively, and are thought to have a metal-interface layer-semiconductor configuration. Under forward bias and for T ≥ 200 K, the electrical current transport was controlled by the thermionic emission (TE) process. However, for T ≤ 200 K, The current was controlled by the thermionic field emission (TFE). The characteristic energy E₀₀ = 3.48 meV was obtained from the I(V_G, T) measurements and agreed very well with the value of E₀₀ = 3.62 meV calculated theoretically. The zero-bias barrier height ϕ_B0 determined from the I(V_G) measurements was 0.84 eV at 300 K and decreases to 0.49 eV at 80 K.     

Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (R_s) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, R_s, G_m and Schottky leakage current values are seen to be strongly temperature dependent.     

Microstructural,electrical and optical properties of indium tin oxide (ITO) nanoparticles synthesized by co-precipitation method

In the present study, the synthesis of Tin doped indium oxide (ITO) nanopowder at different compositions (In/Sn = 0, 5, 10, 15 at %) was carried out by co-precipitation method. The decomposition of precipitated indium tin acetylacetonate precursor to form In₂O₃–SnO₂ (Sn_1?xIn_xO₂) at 400 °C was confirmed by the thermal and FTIR studies. The changes in strain and grain size of the synthesized particle with respect to dopant concentration were determined from the X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) images support to confirm the grain size. The optical properties on ITO nanoparticles were analyzed with UV–visible spectroscopy, and band gap was found to vary from 3.62 to 3.89 eV with Sn dopant concentration. This variation was ascribed to the quantum confinement effect.     

Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V_OC = 1.041 V, J_SC = 2.97 mA/cm², FF = 32.3%) to 2.6% (V_OC = 1.336 V, J_SC = 4.65 mA/cm², FF = 41.98%) due to the eliminated interfacial series resistance.     

ITO/p+nc-Si:H contact barrier effects on n-i-p′-p silicon solar cell performances

The computer program AMPS-1D (analysis of microelectronic and photonic structures) has been used to explore the effect of front contact barrier heights for electrons (φ_b0) or holes (φ_h) on the performances of n-i-p′-p amorphous/nanocrystalline silicon based solar cell, with a p type hydrogenated nanocrystalline silicon double layer and with no back reflector. φ_b0 is the result of band bending at the indium tin oxide (ITO)/p⁺doped hydrogenated nanocrystalline silicon (p nc-Si:H) interface. This paper presents results for a n-i-p′-p device, when the p nc-Si:H layer is used as a window and the p′-nc-Si:H layer as a buffer. Band diagram at thermodynamic equilibrium and current–voltage characteristics (J–V), under dark and illumination conditions, for the considered solar cell structure, are calculated. The modeling showed that the reverse bias currents do not depend on the front contact barrier heights. However, in the forward direction, this contact barrier influences strongly the J–V characteristic in the dark and under illumination. As a result, when φ_b0 increases, output cell parameters, like open circuit voltage (V_OC), fill factor (FF) and efficiency (E_ff) increase. The best values obtained are 0.893 V, 0.757 and 8.04%, respectively. These values correspond to a front contact barrier height (φ_b0) equal to 1.65 eV. Such a value of φ_b0 can be realized experimentally by using an indium tin oxide (ITO) front contact electrode, with a work function value about 5.35 eV.     

Structural and optical properties of BaTi2O5 thin films prepared by pulsed laser deposition at different substrate temperatures

BaTi₂O₅ thin films were prepared on MgO (1 0 0) substrates by pulsed laser deposition. The effect of substrate temperature (T_sub) on the structural and optical properties of the films, such as crystal phase, preferred orientation, crystallinity, surface morphology, optical transmittance and bandgap energy, was investigated. The preferred orientation of the films changed form (7 1 0) to (0 2 0) depending on T_sub, and the b-axis oriented BaTi₂O₅ thin film could be obtained at T_sub = 973–1023 K. The surface morphology of the films was different with changing T_sub, which showed a dense surface with an elongated granular texture at T_sub = 973–1023 K. The crystallinity and surface roughness increased at the elevated substrate temperatures. The as-deposited BaTi₂O₅ thin films were highly transparent with an optical transmittance of ～70%. The bandgap energy was found to decrease with increasing substrate temperature, from 3.76 eV for T_sub = 923 K to 3.56 eV for T_sub = 1023 K.     

Quantitative effects of fuel on the synthesis of Ni/NiO particles using a microwave-induced solution combustion synthesis in air atmosphere

Microwave-induced solution combustion process for the synthesis of Ni and NiO powders were described. The exothermic redox reaction and the heat evolved from the reaction completely convert the precursors into their corresponding products at temperatures below 400 °C in an oxidizing atmosphere. The characteristics of synthesized powders were investigated with types and amounts of fuel. Nickel particles were directly synthesized through solution combustion synthesis with fuel-rich (Φ_e = 0.65) composition in air atmosphere without further reducing calcinations process. In the fuel-lean composition range (Φ_e > 1) and stoichiometric composition (Φ_e = 1), only NiO phase crystallized from the precursor mixture without forming any intermediate phases. Primary crystallite size of the as-synthesized Ni and NiO were about 30 nm.     

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

The effect of substrate temperature (T_s) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T_s was varied from 300 °C to 500 °C, with a step of 50 °C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 °C and 500 °C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T_s. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 °C is the optimal T_s. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T_s until 400 °C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T_s. The optical band gap calculated from the absorption edge showed that the films deposited with T_s of 300 °C and 350 °C possess higher values than those deposited at higher T_s.     

Preparation and characterization of LiFe1/2Ni1/2VO4

A layered ceramic oxide, LiFe_1/2Ni_1/2VO₄ has been prepared using solid-state reaction technique. The preparation conditions have been optimized using thermogravimmetric analysis (TGA) studies. The formation of the material sample under the reported condition has been confirmed by X-ray diffraction (XRD) analysis. XRD analysis indicates the crystal structure to be orthorhombic with lattice parameter: a = 3.5637 Å, b = 17.7486 Å, c = 12.2884 Å. The phase morphology and surface properties studied using scanning electron microscopy (SEM), suggest a polycrystalline texture with reasonable number of the voids. Complex impedance analysis of the sample has indicated: (i) conduction due to bulk contribution at T ≤ 200 °C, (ii) the presence of grain boundary effects at T ≥ 200 °C, (iii) negative temperature coefficient of resistance (NTCR) behaviour and (iv) evidence of temperature dependent electrical relaxation phenomena in the sample. The DC conductivity (σ_DC) shows typical Arrhenius behaviour when observed as a function of the temperature. The activation energy value has been estimated to be 0.42 eV. σ_DC, as evaluated from complex impedance spectrum, shows a jump of nearly ∼4 orders of magnitude in the value at higher temperature when compared to that of the room temperature value. AC conductivity spectrum obeys Jonscher's universal power law. The results of σ_AC as a function of frequency are also discussed.     

Local solid particle behavior inside the upper zone of a circulating fluidized bed riser

The solid phase behavior is studied in the upper zone of a circulating fluidized bed riser with glass particle of mean diameter 107 μm, using a Phase Doppler Anemometer. Superficial gas velocities U_g > U_c are investigated covering the turbulent and the fast fluidization regimes and this for three static bed heights (H_s = 50 mm, H_s = 100 mm and H_s = 150 mm). The results show that the mean axial particle velocity lateral profile shapes found parabolic for H_s = 50 mm, devolve to a concave shape for H_s = 100 mm and H_s = 150 mm, creating a particles speeding zone between the core and the annulus zones. For both axial and transversal standard deviations of particle velocities in the core region, the values for the three static bed heights unite to form two stages of evolutions with U_g, where the transition velocity between these stages is found associated to the appearing of a significant entrainment of solid particles. At this transition velocity, the transversal movement originally directed toward the center riser, undergo a change toward the wall beginning near the wall and spreading into a large part of the section riser with increasing U_g. A discussion on the boundary between the turbulent and fast fluidization regimes is made based on these results.     

Efficient laser operation at 1.06 μm in co-doped Lu3+, Nd3+:GdCa4O(BO3)3 single crystal

Efficient laser emission at 1.06 μm was obtained from a diode-laser quasi-continuous wave pumped Nd_0.04Gd_0.86Lu_0.10Ca₄O(BO₃)₃ (Nd:GdLuCOB) single crystal. An uncoated, 6.0-mm long, ZX-cut Nd:GdLuCOB medium yielded laser pulses with 1.76 W peak power for absorbed pump pulses of 5.49 W peak power, corresponding to an overall optical-to-optical efficiency η_oa = 0.32; the slope efficiency was η_sa = 0.44. Comparison is made with an uncoated XY-cut Nd:GdCOB medium (4.0-at.% Nd doping and 6.8-mm length) from which laser pulses with 1.74 W peak power (at optical efficiency η_oa = 0.25) and 0.31 slope efficiency were obtained. The improvements in laser emission of Nd:GdLuCOB at the fundamental wavelength are important for future self-frequency doubling in ZX principal plane of this crystal.     

Interaction of C with vacancy in W: A first-principles study

We provide a vacancy trapping mechanism of C in W by investigating structure, stability, and diffusion properties of C in W using a first-principles method. C easily bonds onto the internal-surface of vacancy. A monovacancy is capable of trapping as many as 4 C atoms to form C_nV (n = 1, 2, 3, 4) complexes. Single C atom prefers to interact with neighboring W at vacancy with the trapping energy of ?1.93 eV. With the C atoms added, both of them are preferred to bind with each other to form covalent-like bond despite the metallic W environment. For the C_nV complexes, C₂V is the major one due to its largest average trapping energy (?1.97 eV). Kinetically, formation of the C_nV complexes can be ascribed to the interstitial mechanism due to the lower activation energy barrier of 1.46 eV for the interstitial C than 1.66 eV for the vacancy.     

Coupled substitutions in In2O3: New transparent conductors In2−xM2x/3Sbx/3O3 (M = Cu,Zn)

Two solid solutions In_2−xM_2x/3Sb_x/3O₃ (M = Cu, Zn) with the bixbyite structure have been synthesized in air at 1300 °C. The homogeneity range is larger for Zn (x = 0.42) than for Cu (x = 0.20) and the cationic distribution of the Cu/Sb and Zn/Sb couples is weakly ordered. These new oxides appear to be transparent conductors. Even fully deprived of tin, they have good potential properties. These oxides are either semiconductors with a small band gap (Cu/Sb) or semimetals (Zn/Sb) with σ = 3 × 10² (Ω cm)⁻¹ at room temperature. These materials are more efficient than bulk ITO prepared under the same experimental conditions, i.e. without reducing treatment (σ = 50 (Ω cm)⁻¹).     

The influence of speed,cyclists’ age,pedaling frequency,and observer age on observers’ time to arrival judgments of approaching bicycles and e-bikes

Given their potential to reach higher speed levels than conventional bicycles, the growing market share of e-bikes has been the reason for increased concerns regarding road safety. Previous studies have shown a clear relationship between object approach speed and an observers’ judgment of when the object would reach a predefined position (i.e., time to arrival, TTA), with higher speed resulting in longer TTA estimates. Since TTA estimates have been linked to road users’ decisions of whether or not to cross or turn in front of approaching vehicles, the higher potential speeds of e-bikes might result in an increased risk for traffic conflicts. The goal of the two experiments presented in this paper was to examine the influence of speed and a variety of other factors on TTA estimation for conventional bicycles and for e-bikes. In both experiments, participants from two age groups (20–45 years old and 65 years or older) watched video sequences of bicycles approaching at different speeds (15–25 km/h) and were asked to judge the TTA at the moment the video was stopped. The results of both experiments showed that an increase in bicycle approach speed resulted in longer TTA estimates (measured as the proportion of estimated TTA relative to actual TTA) for both bicycle types (η_p²_Exp.1 = .489, η_p²_Exp.2 = .705). Compared to younger observers, older observers provided shorter estimates throughout (Exp. I: M_Diff = 0.35, CI [0.197, 0.509], η_p² = .332, Exp. II: M_Diff = 0.50, CI [.317, 0.682], η_p² = .420). In Experiment I, TTA estimates for the conventional bicycle were significantly shorter than for the e-bike (M_Diff = 0.03, CI [.007, 0.044], η_p² = .154), as were the estimates for the elder cyclist compared to the younger one (M_Diff = 0.05, CI [.025, 0.066], η_p² = .323). We hypothesized that the cause for this effect might lie in the seemingly reduced pedaling effort for the e-bike as a result of the motor assistance it provides. Experiment II was able to show that a high pedaling frequency indeed resulted in shorter TTA estimates compared to a low one (M_Diff = 0.07, CI [0.044, 0.092], η_p² = .438). Our findings suggest that both the e-bikes’ potential to reach higher speeds and the fact that they reduce the perceived cycling effort increase the risk of TTA misjudgments by other road users.     

Synthesis,strong room-temperature PL and photocatalytic activity of ZnO/ZnWO4 rod-like nanoparticles

Zinc oxide (ZnO)/zinc tungstate (ZnWO₄) rod-like nanoparticles with diameters in the range of 6–11 nm and length of about 30 nm were synthesized by a low temperature soft solution method at 95 °C in the presence of non-ionic copolymer surfactant. It was found that their crystallinity was enhanced with the increase of heating time from 1 h up to 120 h. The photoluminescence (PL) measurements showed very strong, narrow UV band peaked at 3.30 eV and a broad visible band peaking at 2.71 eV with a shoulder at about 2.53 eV, for λ_exc < 300 nm. Quite large variations in the intensities of the two PL bands were observed for different excitation wavelengths. The intensity of the main visible band decreases with decreasing excitation energy and disappears when samples are excited λ = 320 nm (E_exc = 3.875 eV). We found that observed optical properties originate from ZnO phase. UV band gap PL had high intensity for all applied excitations, probably induced by ZnWO₄ phase presence on the surface. In addition, two values were found for direct band-gap energy of ZnO/ZnWO₄ rod-like nanoparticles 3.62 and 3.21 eV, determined from reflectance spectrum. The photocatalytic behaviour of ZnO is strongly dependent on the formation of ZnWO₄ phase, of the obtained rod-like nanoparticles.     

Thickness dependence of optical parameters for Ge–Se–Te thin films

The present work deals with thickness dependent study of the thin films of Ge₁₀Se_90 − xTe_x (x = 0, 10) chalcogenide glasses. Bulk samples of Ge₁₀Se₉₀ and Ge₁₀Se₈₀Te₁₀ have been prepared by melt quenching technique. Thin films (thickness d = 800 nm and 1100 nm) of the prepared samples have been deposited on glass substrate using vacuum evaporation technique. The optical parameters i.e. optical band gap (E_g^opt), absorption coefficient (α), refractive index (n) and extinction coefficient (k) are calculated from the transmission spectrum in the range 400–1500 nm. The optical band gap decreases with the increase of thickness from 1.87 ± 0.01 eV (d = 800 nm) to 1.80 ± 0.01 eV (d = 1100 nm) for Ge₁₀Se₉₀ and from 1.62 ± 0.01 eV (d = 800 nm) to 1.48 ± 0.01 eV (d = 1100 nm) for Ge₁₀Se₈₀Te₁₀ thin films.     

Electro-magnetic transport behavior of La0.7Ca0.3MnO3/SnO2 composites

The composites of (1 ? x)La_0.7Ca_0.3MnO₃ (LCMO) + xSnO₂ (x = 0.01, 0.05, 0.10, 0.30, 0.50, 0.60, 0.65 and 0.70) were synthesized by conventional solid-state reaction method. The results of X-ray diffraction (XRD) and scanning electronic microscopy (SEM) indicate that SnO₂ and LCMO coexist in the composites and SnO₂ mainly segregates at the grain boundaries of LCMO, which are in accordance with the results of the magnetic measurements. The detailed electrical characterizations for all the samples showed that a new metal–insulator (M–I) transition temperature (T_P2) appeared at a lower temperature compared with the intrinsic metal–insulator (M–I) transition temperature (T_P1) when x < 0.50 (T_P1 > T_P2). When x > 0.50, T_P1 disappeared, leaving only T_P2. The resistivity percolation threshold of the composites occurred at x = 0.60. Corresponding to the two M–I transition peaks, the curves of magnetoresistance against temperature also showed two peaks for all composites. These phenomena can be explained by the segregation of a new phase related to SnO₂ at the grain boundaries or surfaces of the LCMO grains.     

Electrical properties of niobium doped barium bismuth-titanate ceramics

BaBi₄Ti_4–5/4xNb_xO₁₅ (BBNTx, x = 0, 0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi₄Ti₄O₁₅ ceramics was investigated in a wide range of temperatures (20–777 °C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences T_c decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi₄Ti₄O₁₅ exhibits dielectric constant of ～204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of σ_DC was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively.