A mathematical theory of de‐integrating long‐time integrated rainfall and its application for predicting 1‐min rain rate statistics

To date, the methods devised for converting long‐term experimental probability distribution (pd), , of the rain rate ρ_T integrated in T min (T > > 1 min) to 1‐min pd, P_R(R), of the instantaneous rain rate R, are based on flawed T‐min data and, as such, are not based on fully reliable first principles. is not only an upward translated version of P_R(R) but also rotated clockwise and distorted. The current methods do not correct these errors. We propose and discuss a mathematical theory, which corrects these errors and thus de‐integrates T‐min experimental pds into the corresponding 1‐min pd, the input required by all rain attenuation prediction methods. The theory is based on simple first principles whose parameters are calibrated by means of a large and reliable rain‐rate data bank recorded in Spino d'Adda, a site held as an experimental laboratory and used for exploratory data analysis. We show that P_R(R) is modelled by four distinct functions in four disjoint ranges, and that this modelling is physically meaningful. We have tested the theory up to integration times of 12 h, with a large experimental data bank of 1‐min rain‐rate time series recorded in Gera Lario, Fucino, Rome, Prague, and Montreal, besides Spino d'Adda. Defined the fraction of rainy time in an average year, P_o (%), we have found that: (a) the modelling is very good up to 6 h; (b) in the range from about P_o to 0.001%, the error values are constant, with average error set at about ? 3% and RMS error less than 8% for T ≤ 120 min, less than about 9% for 120 < T ≤ 360 min. We have also applied the theory to rain‐rate time series provided by meteorological agencies with integration time T = 60 min (blind test) with excellent result. Copyright © 2011 John Wiley & Sons, Ltd.     

Electrical properties of substitutionally doped cvd amorphous silicon

Electrical properties of phosphorus doped amorphous Si (a-Si) prepared by chemical vapor deposition (CVD) have been investigated. The gaseous impurity ratio R = Np_PH3/ N_SiH4, was varied from 2×10^-6 to 1.1×10^-2. When the ratio R exceeds R_C =4.2 ×10^-4, the room temperature conductivity is dominated by the conduction in the extended states and rapidly increases with R up to 10^-1 (Ω-cm)^-1 at the ratio R = 1.1×10^-1. It is found that phosphorus doping below R_C results in the compensation of native defects or dangling bonds and that an efficient shift of the Fermi level as well as a narrowing of the tailing width of the extended states take place by doping above R_C. The magnetoresistance is explained as a modification of the spin-flip relaxation time of localized electrons by external magnetic field.     

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; ImplantedN⁺GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (R_sh) and contact resistance (R_c) have been investigated in the temperature (T) range of 25-250 °C. It was found that the R_sh (850/700 Ω□) (25/250 °C) and R_c (2.2/0.7 Ωmm) decrease with T for ImplantedN⁺GaN contact and R_sh (400/850 Ω□) and R_c (0.2/0.4 Ωmm) (weakly for R_c) increase with T for HJAlGaN/GaN contact. Numerical computation based models are used to determine the theoretical R_sh and R_c behavior with T and to fit the experimental values.     

Electrical properties of Pb1−xCdxS epitaxial films

We have measured the resistivity ρ and Hall coefficient R_H at 300, 77, and 4.2 K of p-type Pb_1−XCd_XS epitaxial films as a function of substrate temperature T_s, film thickness d, and composition x. The films were vapor deposited on cleaved (111) BaF₂ (111) SrF₂ , and (001) NaCl and polished (001) BaF₂ substrates. The Hall mobility μ_H at 77 K of p-type PbS films increased approximately linearly from 1 × 10⁴ to 2 × 10⁴ cm² V⁻¹ sec⁻¹ as T_s was varied from 400 to 500°C, respectively. Both μ_H and R_H increased with d due to the presence of a strong p-type surface layer on the exposed surface. The x of the films was controlled by the x of the source material and T_s. The mole fraction of CdS could be varied between 0.002 < x < 0.06 by varying T between 513 and 410°C, respectively, and using source material with x = 0.06. The electrical properties of samples grown on freshly cleaved (111) BaF₂ and (111) SrF₂ were essentially identical even though the lattice constant of SrF₂ is a better match to Pb_1−XCd_XS than BaF₂. The R_H and μ_H at 77 K were independent of thickness for low substrate temperatures and were observed to increase with increasing thickness for high substrate temperatures. The μ_H increased with decreasing temperature and became temperature independent below about 30 K, which is similar to the behavior observed in other lead salt compounds. However, the magnitude of μ_H was considerable lower throughout the 300 to 4.2 K temperature range than for PbS films. The R_H showed little temperature variation, which is typical lead salt behavior. Supported by Naval Surface Weapons Center Independent Research Funds.     

Calculations of millimeter wave depolarization due to melting layer and rain

A model for calculating the total depolarization due to the melting layer and rain is proposed under the assumption that oblate spheroidal melting particles and raindrops have the same orientation. The melting layer is composed of the melting particles which are made up from the mixture of ice, air and water. The specific attenuation and the specific phase shift both for the melting layer and for rain are given in the power lawaR ^b form for the rain rates 0≤R≤12.5 mm/h and the parameters are tabled over the frequency range of 1–100 GHz. Using the model, the numerical calculation of the depolarization is possible for three drop size distributions.     

Precise Control of Lamellar Thickness in Highly Oriented Regioregular Poly(3‐Hexylthiophene) Thin Films Prepared by High‐Temperature Rubbing: Correlations with Optical Properties and Charge Transport

Precise control of orientation and crystallinity is achieved in regioregular poly(3‐hexylthiophene) (P3HT) thin films by using high‐temperature rubbing, a fast and effective alignment method. Rubbing P3HT films at temperatures T_R ≥ 144 °C generates highly oriented crystalline films with a periodic lamellar morphology with a dichroic ratio reaching 25. The crystallinity and the average crystal size along the chain axis direction, l_c, are determined by high‐resolution transmission electron microscopy and differential scanning calorimetry. The inverse of the lamellar period l scales with the supercooling and can accordingly be controlled by the rubbing temperature T_R. Uniquely, the observed exciton coupling in P3HT crystals is correlated to the length of the average planarized chain segments l_c in the crystals. The high alignment and crystallinity observed for T_R > 200 °C cannot translate to high hole mobilities parallel to the rubbing because of the adverse effect of amorphous zones interrupting charge transport between crystalline lamellae. Although tie chains bridge successive P3HT crystals through amorphous zones, their twisted conformation restrains interlamellar charge transport. The evolution of charge transport anisotropy is correlated to the evolution of the dominant contact plane from mainly face‐on (T_R ≤ 100 °C) to edge‐on (T_R ≥ 170 °C).     

Highly Conductive,Bendable, Embedded Ag Nanoparticle Wire Arrays Via Convective Self‐Assembly: Hybridization into Ag Nanowire Transparent Conductors

The optoelectrical properties of Ag nanowire (NW) networks are improved by incorporating the NWs into highly conductive ordered arrays of Ag nanoparticle wires (NPWs) fabricated via surfactant‐assisted convective self‐assembly. The NPW–NW hybrid conductor displays a transmittance (T) of 90% at 550 nm and a sheet resistance (R _s) of 5.7 Ω sq^?1, which is superior to the corresponding properties of the NW network showing a R _s of 14.1 Ω sq^?1 at a similar T. By the modified wettability of a donor substrate and the capillarity of water, the sintered NPW–NW hybrid conductors are perfectly transferred onto an UV‐curable photopolymer film, and the embedded hybrid conductors exhibit excellent electromechanical properties. The R _s and T of the NPW arrays can be predicted by using a simple model developed to calculate the width and height of the hexagonal close‐packed particles formed during the convective self‐assembly. The numerical analysis reveals that the maximum Haacke figure of merit of the NW networks is increased considerably from 0.0260 to 0.0407 Ω^?1 by integration with the NPW array. The highly conductive NPW arrays generated using a simple, low‐cost, and nonlithographic process can be applied to enhancing the performances of other transparent conductors, such as carbon nanotubes, metal oxides, and graphenes.     

Analytic models for calculating the rain brightness temperature in the millimeter and centimeter wave bands

Three analytic models for calculating rain brightness temperature T _br in the millimeter and centimeter wave bands are proposed. The choice of the radiation model required to calculate T _br of the system formed by the atmosphere in the presence of precipitation and by the Earth’s surface is validated on the basis of the analysis of various physical processes affecting this radiation. These processes include absorption and scattering of radiation by hydrometeors as well as self-radiation and reflection from the Earth’s surface.     

Electrical and thermoelectric properties of ZnO under atmospheric and hydrostatic pressure

Temperature (for T = 77–400 K) and pressure (for P ≤ 8 GPa) dependences of conductivity σ(T,P). Hall coefficient R _H(T, P), and Seebeck coefficient Q(T) were studied in single-crystal n-ZnO samples with the impurity concentration N _i = 10¹⁷ ? 10¹⁸ cm^?3 and free-electron concentration n = 10¹³?10¹⁷ cm^?3. Single crystals were grown by the hydrothermal method. Dependence of the ionization energy of a shallow donor level on the impurity concentration E _d1(N _d) is determined, along with the pressure coefficients for the ionization energy ?E _d1/?P and static dielectric constant ?x/?P. A deep defect level with the energy E _d2 = 0.3 eV below the bottom of the conduction band is found. The electron effective mass is calculated from the obtained data on the kinetic coefficients R _H(T) and Q(T).     

Energy spectrum of charge carriers in Ag2Te

Conductivity σ(T) and Hall constant R(B, T) are studied for Ag₂Te with excess 0.1% of Te. The change in the R sign from (?) to (+) is found in dependences R(B) at various temperatures. In the temperature dependences of R in a range of 1–3 kG, two extrema are found, namely, minimum at T ～ 60 and maximum at T ≈ 80 K, and at B ≥ 5 kG, the double change in sign of R from (?) to (+) and from (+) to (?) is found. Temperatures of sign inversion for R depend on the magnetic field. At B = 15 kG, the sign of R varies from (?) to (+) at T ≈ 38 K, and from (+) to (?) at T ～ 70 K. It is found approximately in the region of the change in the sign of R(T), the concentration n(T) and electrical conductivity pass through the minimum. It is established that the minima of n(T) and σ(T), extrema in R(T), and sign inversion for R(T) from (?) to (+) as well as the overestimated temperature dependence n∞T ⁴ are caused by localization of conduction electrons at acceptor levels entering the conduction band of Ag₂Te. The values of parameters of electrons (n, μ _n ) and holes (p, μ _p ) at the points of the change in the sign of R(T) from (?) to (+) and from (+) to (?) are determined.     

Special features of formation and characteristics of Ni/21<Emphasis Type="Italic">R</Emphasis>-SiC Schottky diodes

The Ni/n-21R-SiC(0001) and \(Ni/n - 21R - SiC(000\bar 1)\) surface-barrier structures formed on 21R-SiC crystals doped to a concentration of (1–2)×10¹⁸ cm^?3 and grown by the Lely method were investigated prior to and after rapid thermal annealing (RTA) in vacuum (10^?2 Pa) in the temperature range of 450–1100°C. Using X-ray diffraction analysis and Auger analysis, it is shown that cubic NiSi₂ and orthorhombic δ-Ni₂Si and NiSi silicides coexist with pure Ni in starting samples. The RTA brings about a polymorphic transformation of these phases, which causes the transformation of a barrier contact to a rectifying one independently of the SiC face type, even at T?600°C. The physicochemical mechanisms of degradation of these barrier structures are discussed.     

Phase relations in Cu- RO1.5- O (R < Ho,Er, Yb) and gibbs energy of formation of Cu2R2O5 (R < Ho,Er, Yb) between 1000 and 1325K

Phase relations in Cu-RO_1.5-O(R < Ho,Er,Yb) ternary systems at 1273K have been established by isothermal equilibration of samples containing different ratios of Cu:R(R < Ho,Er,Yb) in flowing air or high purity argon atmosphere for four days. The samples were then rapidly cooled to ambient temperature and the coexisting phases were identified by powder x-ray diffraction analysis. Only one ternary oxide, Cu₂R₂O₅(R < Ho,Er,Yb) was found to be stable. The chemical potential of oxygen for the coexistence of the three phase assemblage, Cu₂O + R₂O₃ + Cu₂R₂O₅(R < Ho,Er,Yb) has been measured by employing the solid-state galvanic cells,< (−) Pt, Cu₂O + Ho₂O₃+ Cu₂Ho₂O₅//CSZ//Air (Po₂< 2.12 × 10⁴ Pa), Pt (+) (−) Pt, Cu₂O + Er₂O₃+ Cu₂Er₂O//CSZ//Air (Po₂< 2.12 × 10⁴ Pa), Pt (+) (−) Pt, Cu₂O + Yb₂O₃ + Cu₂Yb₂O₅//CSZ//Air (Po₂ < 2.12 × 10⁴ Pa), Pt (+) in the temperature range of 1000 to 1325K. Combining the measured emf of the above cells with the chemical potential of oxygen at the reference electrode, using the Nernst relationship, gives for the reactions, 2Cu₂O(s) + 2Ho₂O₃(s) + O₂(g) → 2Cu₂Ho₂O₅(s) (1) 2Cu₂O(s) + 2Er₂O₃(s) + O₂(g) → 2Cu₂Er₂O₅(s) (2) and 2Cu₂O(s) + 2Yb₂O₃(s) + O₂(g) → 2Cu₂Yb₂O₅(s) (3) δΜo₂ = −219,741.3 + 145.671 T (±100) Jmol⁻¹ (4) δΜo₂ = −222,959.8 + 147.98 T(±100) Jmol⁻¹ (5) and δΜo₂ = −231,225.2 + 151.847 T(±100) Jmol⁻¹ (6) respectively. Combining the chemical potential of oxygen for the coexistence of Cu₂O + R₂O₃ + Cu₂R₂O₅(R− Ho,Er,Yb) obtained in this study with the oxygen potential for Cu₂O + CuO equilibrium gives for the reactions, 2 CuO(s) + Ho₂O₃(s) → Cu₂Ho₂O₅(s) (7) 2 CuO(s) + Er₂O₃(s) → Cu₂Er₂O₅(s) (8) and 2 CuO(s) + Yb₂O₃(s) → Cu₂Yb₂O₅(s) (9) δG‡ < 22,870.3 − 23.160 T (±100) Jmol⁻¹ (10) δG‡ < 21,261.1 − 22.002 T (±100) Jmol⁻¹ (11) and δG‡ < 17,128.4 - 20.072 T (±100) Jmol^-1 (12) It can be clearly seen that the formation of Cu₂R₂O₅R < Ho,Er,Yb) from the component oxides is endothermic. Further, Cu₂R₂O₅(R < Ho,Er,Yb) are an entropy stabilized phases. Based on the results obtained in this study, the oxygen potential diagram for Cu-R-O(R < Ho,Er,Yb) ternary system at 1273K has been composed.     

Space communications with variable elevation angle faded by rain: Radio links to the Sun–Earth first Lagrangian point L1

How rain attenuation affects space links with variable elevation angles is not yet fully researched. The aim of this paper is to investigate this topic by simulating rain attenuation at K_a Band, in slant paths with variable elevation angles, with the Synthetic Storm Technique (SST), in links connected with spacecrafts at the Sun–Earth first Lagrangian point L₁, viewed from Spino d'Adda (Italy), Tampa (Florida), White Sands (New Mexico). The input to the SST is a large database of time series of 1‐min rain rate recorded on site, 10 years in Spino d'Adda, 4 years at Tampa and White Sands. After recalling known results on the elevation angle of the Sun (i.e. L₁), θ_s (°), seen from latitude λ (°), I report what seems to be a new result: the mode of the probability density function of θ_s in a year, in the range 0 ≤ λ ≤ 90° ? ε (Earth axis tilt angle ε = 23.44°), coincides with the peak angle found at the day of the Winter solstice at the site, a result valid also for other planets, once their tilt angle is used. Compared to the complementary probability distribution function (pdf) of rain attenuation calculated for a geostationary (GEO) link (fixed elevation angle), the pdf to L₁ depends on the rain‐rate pdf during the contact time with L₁, according to the local climate. I show that, to obtain a good and easier estimate of the rain attenuation pdf in L₁ links, we can consider a GEO link with elevation angle equal to the mean angle and rain rate pdf, both during the contact time, and that the mode angle gives an upper bound to the rain attenuation pdf in the sites considered. Copyright © 2015 John Wiley & Sons, Ltd.     

Tetrabutylammonium-Intercalated 1T-MoS2 Nanosheets with Expanded Interlayer Spacing Vertically Coupled on 2D Delaminated MXene for High-Performance Lithium-Ion Capacitors

2D 1T phase MoS₂ (1T-MoS₂) nanosheet with metallic conductivity and expanded interlayer spacing is considered as a highly potential lithium storage electrode material but remains thermodynamic instability in aqueous media, seriously hindering the electrochemical performance. Herein, a versatile strategy is proposed for the preparation of thermodynamically stable 1T-MoS₂/MXene heterostructures with the aid of delaminated Ti₃C₂T_x MXene (d-Ti₃C₂T_x) dispersion containing tetrabutylammonium hydroxide. The 2D d-Ti₃C₂T_x provides more uniform nucleation sites for MoS₂, and the TBA⁺ ions can intercalate into MoS₂ to induce the phase conversion from semiconducting 2H to 1T. Moreover, the electrochemical advantages of 1T-MoS₂ and d-Ti₃C₂T_x can be united by the construction of a well-organized heterostructure. Outstanding rate performance is realized because of extra-large interlayer space of 1T MoS₂ with TBA⁺ intercalation and decreased energy barrier for fast Li⁺ diffusion. Subsequently, a lithium-ion capacitor (LIC) is assembled based on 1T-MoS₂/d-Ti₃C₂T_x as anode and hierarchically porous graphene nanocomposite with micro/mesoporous structure as a cathode. The LIC exhibits a large energy density up to 188 Wh kg⁻¹, an ultra-high power density of 13 kW kg⁻¹, together with remarkable capacity retention of 83% after 5000 cycles. This study demonstrates the great promise of 1T-MoS₂/d-Ti₃C₂T_x heterostructures as anode for high-performance LICs.     

Unavailability due to rain of VSAT networks operating in Ka and Ku bands in Brazil

The unavailability due to rain of VSAT star networks operating on Ku and Ka bands in Brazil is analysed in this paper. A large number of simulations performed over the Earth–space links resulting from combinations of four (real and hypothetical) satellites with six Brazilian Earth stations provide a good characterization of the rain unavailability in tropical and equatorial regions subject to heavy rainfall and thunderstorms. The simulations also compare the influence on the estimated unavailability of the use of two different ITU‐R rain attenuation models and two values (calculated and measured) for the rainfall rate exceeded during 10^?2% of the time, the climatic parameter in the models, in addition to the link polarization employed. The results obtained point to VSAT star networks as a practical solution to provide telecommunications services to remote communities. Copyright © 2006 John Wiley & Sons, Ltd.     

Low-field current transport mechanisms in rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon junctions in the dark

Measurements of the forward and reverse currents in an undoped rf magnetron sputter deposited boron carbide (B₅C)/p-type Si(111) junction have been made in the dark in the temperature range 120–300K at low-bias voltages (0–0.3V). A diode-like behaviour of the junction current has been observed in this low-bias region at all temperatures but with a rather large reverse (leakage) current I _R, particularly at high temperatures (I _R≈2 μA at V = ?0:3V and T = 290 K). The forward ‘voltage factor’ A (T) was found to decrease with increasing temperature as A (T)≈q/ηk _B T, with relatively high values of the ‘ideality factor’ η(about 3.5–4), probably due to the existence of an interfacial layer. The temperature dependence of the measured junction current (forward and reverse) flowing at low bias voltages and of the forward ‘current factor’ I _0F can be described satisfactorily by a model of the tunnelling of thermally excited carriers, including tunnelling via impurity localized levels, of the form I (T) ∝ exp [?C/T ^1/3] over the entire temperature range studied (120–300K). A high density of ‘localized’ energy states as large as 10¹⁸ cm^?3 eV^?1 was estimated, which can be attributed in part to ‘extrinsic’ interface states that could have been formed throughout the fabrication procedures of the rf sputter deposited B₅C/p-crystalline silicon junction studied. Another possible cause of such large concentration of ‘localized’ states is the ‘intrinsic’ interface states produced by the lattice mismatch between the polycrystalline boron carbide and crystalline silicon semiconductors as well as of the high intrinsic defect concentration caused by structural imperfections that often exist in boron carbide compounds.     

Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis

Minority carrier lifetimes in epitaxial 4H-SiC p⁺n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t_s) as a function of initial ON-state forward current (I_F) and OFF-state reverse current (I_R) followed well-documented trends which have been observed for decades in silicon p⁺n rectifiers. Average minority carrier (hole) lifetimes (τ_p) calculated from plots of t_s vs I_R/I_F strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/τ_p as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 mm². The bulk minority carrier (hole) lifetime extracted from the 1/τ_p vs P/A plot is approximately 0.7 μs, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.     

Comparison of measured rain attenuation in the 10.982‐GHz band with predictions and sensitivity analysis

The campaign to collect rain attenuation data on terrestrial links had commenced in Malaysian tropical climates for almost two decades. The terrestrial data so far collected have been greatly utilized to derive useful statistics for various microwave applications, such as frequency scaling, rain rate conversion factor, 1‐min rain rate contour maps, wet antenna losses, and fade slope duration analysis. However, there is still severe scarcity of rain attenuation data on earth–space links in Malaysia. The results of the 2‐year measurement (January 2009–December 2010) of rain rates and rain‐induced attenuation in vertically polarized signals propagating at 10.982 GHz have been presented in this paper. The rain attenuation over the link path was measured at Islamic International University Malaysia and compared with ITU‐R P.618‐10 and Crane global models in this paper. The test results show that the two prediction models seem inadequate for predicting rain attenuation in the Ku‐band in Malaysia. Sensitivity analysis performed on measured data also reveals that the sensitivity variables depend on rain rate. Copyright © 2014 John Wiley & Sons, Ltd.     

Linear and Nonlinear Optical Properties of Ag Nanowire Polarizing Glass

An R₂O–B₂O₃–SiO₂ (R = Li, Na, K) polarizing glass containing Ag nanorods is prepared by thermal elongation–reduction technology. The transverse and longitudinal plasmon absorption peaks of the embedded Ag nanorods are near 460 and 720 nm, respectively. When the polarization of the laser is parallel to the long axis of the Ag nanorods, the nonlinear absorption coefficient β = 0.82 cm GW^–1 and the nonlinear refractive index n₂ = –1.5 × 10^–4 cm² GW^–1. When the polarization of light is perpendicular to the long axis of the Ag nanorods β = 0.12 cm GW^–1 and n₂ = –7.2 × 10^–5 cm² GW^–1 and the appropriate one‐ and two‐photon figures of merit (FOM), W = 1.6 and T = 0.16, respectively, are obtained, which satisfies the demand, W > 1 and T < 1, for applications in all optical switching, where W is a one‐photon FOM, and T is a two‐photon FOM.     

Silica‐Coated Manganese Oxide Nanoparticles as a Platform for Targeted Magnetic Resonance and Fluorescence Imaging of Cancer Cells

Monodisperse silica‐coated manganese oxide nanoparticles (NPs) with a diameter of ～35 nm are synthesized and are aminated through silanization. The amine‐functionalized core–shell NPs enable the covalent conjugation of a fluorescent dye, Rhodamine B isothiocyanate (RBITC), and folate (FA) onto their surface. The formed Mn₃O₄@SiO₂(RBITC)–FA core–shell nanocomposites are water‐dispersible, stable, and biocompatible when the Mn concentration is below 50 µg mL^?1 as confirmed by a cytotoxicity assay. Relaxivity measurements show that the core–shell NPs have a T₁ relaxivity (r₁) of 0.50 mM ^?1 s^?1 on the 0.5 T scanner and 0.47 mM ^?1 s^?1 on the 3.0 T scanner, suggesting the possibility of using the particles as a T₁ contrast agent. Combined flow cytometry, confocal microscopy, and magnetic resonance imaging studies show that the Mn₃O₄@SiO₂(RBITC)–FA nanocomposites can specifically target cancer cells overexpressing FA receptors (FARs). Findings from this study suggest that the silica‐coated Mn₃O₄ core–shell NPs could be used as a platform for bimodal imaging (both magnetic resonance and fluorescence) in various biological systems.