共查询到20条相似文献,搜索用时 15 毫秒
1.
Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier 总被引:1,自引:0,他引:1
《Electron Device Letters, IEEE》1987,8(9):407-409
A new operating mode for the merged p-i-n/Schottky (MPS) rectifier structure is analyzed. It is shown that these devices exhibit superior forward-drop and turn-off-speed characteristics. As an example, for the same forward drop, the 400-V MPS rectifier is an order of magnitude faster in switching speed when compared to a p-i-n rectifier. In addition, for equal switching speed, the MPS rectifier has much lower forward drop and leakage current. 相似文献
2.
A. Y. Polyakov N. B. Smirnov A. V. Govorkov A. P. Zhang F. Ren S. J. Pearton J. -I. Chyi T. -E. Nee C. -C. Chou C. -M. Lee 《Journal of Electronic Materials》2001,30(3):147-155
GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100–600 V. We have studied the temperature
dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects
present. Generally we find that i-layer background doping varies significantly (from <1014 cm−3 to 2–3×1016), which influences the current conduction mechanisms. The hole diffusion lengths were in the range 0.6–0.8 μm, while deep
level concentrations were ∼1016 cm−3. 相似文献
3.
Shelton B.S. Ting Gang Zhu Lambert D.J.H. Dupuis R.D. 《Electron Devices, IEEE Transactions on》2001,48(8):1498-1502
The use of GaN for the fabrication of Schottky and p-i-n rectifiers presents an opportunity to take advantage of the high-voltage and high-power handling characteristics of the III-nitride materials. We report the results of two-dimensional (2-D) device simulations to provide estimates of the performance limitations and a comparison for vertical- and horizontal-geometry GaN mesa and planar Schottky-barrier rectifiers and p-i-n devices. The simulated performance of devices with practical drift region thicknesses indicate that it is possible to realize Schottky-barrier and p-i-n rectifiers with turn-on voltages of V 0N<5 V, and blocking voltages of up to VBR=-2,320 V and -675 V, and figure of merit values of VBR2/R0N>1000 and 3000 MW/cm2 , respectively 相似文献
4.
GaN p-i-n紫外探测器的研制 总被引:1,自引:1,他引:0
研制了一种GaN p-i-n型单元器件,详细地讨论了该器件的制备工艺,并对该器件进行了光电性能测试.测试结果表明,器件的正向开启电压在2 V左右,零偏动态电阻R0约为1010~1011 Ω,最大峰值响应率在365 nm处为0.18~0.21 A/W,器件的上升响应时间和下降时间分别为2.8和13.4 ns. 相似文献
5.
研究了GaN/AlGaN异质结背照式P-i-n结构可见盲紫外探测器的制备与性能.GaN/MGaN外延材料采用金属有机化学气相沉积(MOCVD)方法生长,衬底为双面抛光的蓝宝石,缓冲层为AiN,n型层采用厚度为0.8 μm的Si掺杂Al0.3Ga0.7形成窗口层,i型层为0.18 μm的非故意掺杂的GaN,P型层为0.15 μm的Mg掺杂GaN.采用C12、Ar和BCl3感应耦合等离子体刻蚀定义台面,光敏面面积为1.96×10-3cm2.可见盲紫外探测器展示了窄的紫外响应波段,响应区域为310-365 nm,在360 nm处响应率最大,为0.21 A/W,在考虑表面反射时,内量子效率达到82%;优质因子R0A为2.00×108 Ω·cm2,对应的探测率D*=2.31×1013·Hz1/2·W-1;且零偏压下的暗电流为5.20×10-13A. 相似文献
6.
Torvik J.T. Pankove J.I. Van Zeghbroeck B.J. 《Electron Devices, IEEE Transactions on》1999,46(7):1326-1331
We fabricated GaN and 6H-SiC p-i-n photodetectors and compared their electrical and optical characteristics. The GaN diodes suffered from significant leakage current of 37 μA/mm2 at -5 V, while the SiC diode leakage current was below the noise level at 10 pA/mm2 at -20 V. The built-in potentials and the unintentional “i-layer” doping densities were obtained from capacitance-voltage (C-V) measurements. The SiC detectors exhibited a broad spectral response in contrast to the abrupt cutoff observed in the GaN detectors. The peak responsivities of the GaN and SiC photodetectors corresponded to internal quantum efficiencies of 57% at 3.42 eV and 82% at 4.49 eV, respectively. Furthermore, both detectors exhibited excellent visible rejection ratios which is needed for solar-blind applications. The response times at zero bias were 18 and 102 ns for the GaN and SiC detectors, respectively 相似文献
7.
研究了GaN/AlGaN异质结背照式p-i-n结构可见盲紫外探测器的制备与性能。GaN/AlGaN外延材料采用金属有机化学气相沉积(MOCVD)方法生长,衬底为双面抛光的蓝宝石,缓冲层为AlN,n型层采用厚度为0.8 μm的Si掺杂Al0.3Ga0.7N形成窗口层,i型层为0.18 μm的非故意掺杂的GaN,p型层为0.15 μm的Mg掺杂GaN。采用Cl2、Ar和BCl3感应耦合等离子体刻蚀定义台面,光敏面面积为1.96×10-3 cm2。可见盲紫外探测器展示了窄的紫外响应波段,响应区域为310~365 nm,在360 nm处响应率最大,为0.21 A/W,在考虑表面反射时,内量子效率达到82%;优质因子R0A为2.00×108 Ω·cm2,对应的探测率D*=2.31×1013 cm·Hz1/2·W-1;且零偏压下的暗电流为5.20×10-13 A。 相似文献
8.
An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H2/air gas is observed under a forward voltage of 0.2 V. Under an inert environment (N2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface. 相似文献
9.
10.
The current-voltage characteristics of GaN and Al0.08Ga0.92N p-i-n diodes were investigated. The experimental p-i-n structures were grown by MOCVD on 6H-SiC with Si and Mg as dopants. The i region was formed by simultaneously doping with donor and acceptor impurities during growth. Analysis of the current-voltage
characteristics showed that current flow in the p-i-n diodes is due to either drift of thermally excited holes or electron-hole recombination in the i region via impurity centers—just as predicted by the Ashley-Milnes theory. These impurity centers are attributed to Mg acceptor
levels.
Fiz. Tekh. Poluprovodn. 32, 369–372 (March 1998) 相似文献
11.
Lattice-matched Pt/Au–In0.17Al0.83N/GaN hetreojunction Schottky barrier diodes (SBDs) with circular planar structure have been fabricated. The electrical characteristics of InAlN/GaN SBD, such as two-dimensional electron gas (2DEG) density, turn-on voltage, Schottky barrier height, reverse breakdown voltage and the forward current-transport mechanisms, are investigated and compared with those of a conventional AlGaN/GaN SBD. The results show that, despite the higher Schottky barrier height, more dislocations in InAlN layer causes a larger leakage current and lower reverse breakdown voltage than the AlGaN/GaN SBD. The emission microscopy images of past-breakdown device suggest that a horizontal premature breakdown behavior attributed to the large leakage current happens in the InAlN/GaN SBD, differing from the vertical breakdown in the AlGaN/GaN SBD. 相似文献
12.
13.
在研究功率肖特基整流管的基础上,针对反向击穿电压、漏电流、抗浪涌能力的提高,采取加场限环的方法,设计并制造了一种新型结势垒肖特基整流管(Junction barrier Schottky rectifier,JBS)。通过从有源区参数、外延材料、流片工艺、产品电参数、可靠性等方面进行了全面设计。经测试,电参数水平正向电压VF:0.85-0.856V,反向电流IR:4-50.5uA,反向电压VR:307.5-465.2V,抗静电水平从低温退火的6-12KV提高到15KV,经高温直流老化后,可靠性电参数水平满足预期的设计要求。 相似文献
14.
15.
GaN基肖特基结构紫外探测器 总被引:6,自引:5,他引:6
在蓝宝石 (0 0 0 1)衬底上采用低压金属有机物化学气相沉积 (MOCVD)方法生长GaN外延层结构 ,以此为材料制作了GaN基肖特基结构紫外探测器 .测量了该紫外探测器的暗电流曲线、C V特性曲线、光响应曲线和响应时间曲线 .该紫外探测器在 5V偏压时暗电流为 0 4 2nA ,在 10V偏压时暗电流为 38 5nA .在零偏压下 ,该紫外探测器在2 5 0nm~ 36 5nm的波长范围内有较高的响应度 ,峰值响应度在 36 3nm波长处达到 0 12A/W ,在 36 5nm波长左右有陡峭的截止边 ;当波长超过紫外探测器的截止波长 (36 5nm左右 ) ,探测器的响应度减小了三个数量级以上 .该紫外探测器的响 相似文献
16.
在蓝宝石(0001)衬底上采用低压金属有机物化学气相沉积(MOCVD)方法生长GaN外延层结构,以此为材料制作了GaN基肖特基结构紫外探测器.测量了该紫外探测器的暗电流曲线、C-V特性曲线、光响应曲线和响应时间曲线.该紫外探测器在5V偏压时暗电流为0.42nA,在10V偏压时暗电流为38.5nA.在零偏压下,该紫外探测器在250nm~365nm的波长范围内有较高的响应度,峰值响应度在363nm波长处达到0.12A/W,在365nm波长左右有陡峭的截止边;当波长超过紫外探测器的截止波长(365nm左右),探测器的响应度减小了三个数量级以上.该紫外探测器的响应时间小于2μs. 相似文献
17.
High voltage GaN Schottky rectifiers 总被引:1,自引:0,他引:1
Dang G.T. Zhang A.P. Ren F. Cao X.A. Pearton S.J. Cho H. Han J. Chyi J.-I. Lee C.-M. Chuo C.-C. Chu S.N.G. Wilson R.G. 《Electron Devices, IEEE Transactions on》2000,47(4):692-696
Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (VRB) up to 550 and >2000 V, respectively, have been fabricated. The on-state resistance, RON , was 6 mΩ·cm2 and 0.8 Ω cm2 , respectively, producing figure-of-merit values for (VRB )2/RON in the range 5-48 MW·cm-2 . At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5 V for the 550 V diodes and ⩾15 for the 2 kV diodes. Reverse recovery times were <0.2 μs for devices switched from a forward current density of ~500 A·cm-2 to a reverse bias of 100 V 相似文献
18.
p-i-n结构GaN光电探测器性能的研究 总被引:3,自引:1,他引:3
近年来,可见盲与太阳盲光电探测器在火灾监控、太空通信和导弹尾焰探测等方面的应用引起了越来越多的关注。由于氮化镓(GaN)是直接宽带隙半导体材料,所以成为了在可见区与紫外区的光电器件的首选材料,而p-i-n结构的器件因其响应度高、暗电流低、便于集成等优点倍受人们的青睐。采用金属有机气相外延(MOCVD)法制备了p-i-n结构的GaN紫外光电探测器。在此基础上,采用N2气氛下热退火处理的方法,提高了p型GaN层的载流子浓度,从而降低了器件的暗电流。器件在1 V偏压下,暗电流仅为65 pA。器件在1 V偏压下的最大响应度值出现在361 nm处,大小为0.92 A/W。 相似文献
19.
Nuo Xu Gaoqiang Deng Haotian Ma Shixu Yang Yunfei Niu Jiaqi Yu Yusen Wang Jingkai Zhao Yuantao Zhang 《半导体学报》2024,(4):60-68
A nitrogen-polarity(N-polarity) Ga N-based high electron mobility transistor(HEMT) shows great potential for high-frequency solid-state power amplifier applications because its two-dimensional electron gas(2DEG) density and mobility are minimally affected by device scaling. However, the Schottky barrier height(SBH) of N-polarity Ga N is low. This leads to a large gate leakage in N-polarity Ga N-based HEMTs. In this work, we investigate the effect of annealing on the electrical characteristics of... 相似文献