Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Hot filament and microwave plasma CVD micro- nanocrystalline diamond films are analysed by visible and ultra-violet excitation source Raman spectroscopy. The sample grain size varies from 20 nm to 2 μm. The hydrogen concentration in samples is measured by SIMS and compared to the grain size, and to the ratio of sp² carbon bonds determined by Raman spectroscopy from the 1332 cm^− 1 diamond peak and the sp² 1550 cm^− 1 G band. Hydrogen concentration appears to be proportional to the sp² bonds ratio. The 3000 cm^− 1 CH_x stretching mode band intensity observed on the Raman spectra is decreasing with the G band intensity. Thermal annealing modifies the sp² phase structure and concentration, as hydrogen outdiffuses.     

Electrical contacts to nitrogen incorporated nanocrystalline diamond films

The effect of surface plasma treatment on the nature of the electrical contact to the nitrogen incorporated nanocrystalline diamond (n-NCD) films is reported. Nitrogen incorporated NCD films were grown in a microwave plasma enhanced chemical vapor deposition (MPECVD) reactor using CH₄ (1%)/N₂ (20%)/Ar (79%) gas chemistry. Raman spectra of the films showed features at ∼ 1140 cm^− 1, 1350 cm^− 1(D-band) and 1560 cm^− 1(G-band) respectively with changes in the bonding configuration of G-band after the plasma treatment. Electrical contacts to both untreated and surface plasma treated films are formed by sputtering and patterning Ti/Au metal electrodes. Ohmic nature of these contacts on the untreated films has changed to non-ohmic type after the hydrogen plasma treatment. The linear current–voltage characteristics could not be obtained even after annealing the contacts. The nature of the electrical contacts to these films depends on the surface conditions and the presence of defects and sp² carbon.     

The role of nitrogen in the deposition of polycrystalline diamond films

The role of nitrogen in the formation of polycrystalline diamond films prepared using a microwave plasma CVD system has been studied using micro-Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy (XPS). Although the nitrogen concentration in the films was too low to be detected by XPS, the Raman spectrum was found to be significantly affected by the nitrogen flow ratio. The intensity of the Raman peak at 1480 cm⁻¹ significantly decreases, whereas that of 1190 cm⁻¹ peak remains almost unchanged in comparison with the 1350 and 1550 cm⁻¹ peaks with increasing nitrogen flow ratio. In contrast, the preferentially (111)-orientated growth and the growth rate were little influenced by the nitrogen flow ratio. These results indicate that nitrogen plays a special role in the formation and structure of the polycrystalline diamond films studied in this report.     

Deposition and characterization of nanocrystalline diamond films on Co-cemented tungsten carbide inserts

Nanocrystalline diamond films were deposited on Co-cemented tungsten carbides using bias-enhanced hot filament CVD system with a mixture of acetone, H₂ and Ar as the reactant gas. The effect of Ar concentration on the grain size of diamond films and diamond orientation was investigated. Nanocrystalline diamond films were characterized with field emission scan electron microscopy (FE-SEM), Atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction spectroscopy (XRD). Rockwell C indentation tests were conducted to evaluate the adhesion between diamond films and the substrates. The results demonstrated that when the Ar concentration was 90%, the diamond films exhibited rounded fine grains with an average grain size of approximately 60–80 nm. The Raman spectra showed broadened carbon peaks at 1350 cm^− 1 and 1580 cm^− 1 assigned to D and G bands and an intense broad Raman band near 1140 cm^− 1 attributed to trans-polyacetylene, which confirmed the presence of the nanocrystalline diamond phase. The full width at half maximum of the <111> diamond peak (0.8°) was far broader than that of conventional diamond film (0.28°–0.3°). The Ra and RMS surface roughness of the nanocrystalline diamond film were measured to be approximately 202 nm and 280 nm with 4 mm scanning length, respectively. The Ar concentration in the reactant gases played an important role in the control of grain size and surface roughness of the diamond films. Nanocrystalline diamond-coated cemented tungsten carbides with very smooth surface have excellent characteristics, which made them a promising material for the development of high performance cutting tools and wear resistance components.     

Thermal stability and surface modifications of detonation diamond nanoparticles studied with X-ray photoelectron spectroscopy

Detonation nanodiamond (ND) particles were dispersed on silicon nitride (SiN_x) coated sc-Si substrates by spin-coating technique. Their surface density was in the 10¹⁰–10¹¹ cm^?2 range. Thermal stability and surface modifications of ND particles were studied by combined use of X-ray Photoelectron Spectroscopy (XPS) and Field Emission Gun Scanning Electron Microscopy (FEG SEM). Different oxygen-containing functional groups could be identified by XPS and their evolution versus UHV annealing temperature (400–1085 °C) could be monitored in situ. The increase of annealing temperature led to a decrease of oxygen bound to carbon. In particular, functional groups where carbon was bound to oxygen via one σ bond (C–OH, C–O–C) started decomposing first. At 970 °C carbon–oxygen components decreased further. However, the sp²/sp³ carbon ratio did not increase, thus confirming that the graphitization of ND requires higher temperatures. XPS analyses also revealed that no interaction of ND particles with the silicon nitride substrate occurred at temperatures up to about 1000 °C. However, at 1050 °C silicon nitride coated substrates started showing patch-like damaged areas attributable to interaction of silicon nitride with the underlying substrate. Nevertheless ND particles were preserved in undamaged areas, with surface densities exceeding 10¹⁰ cm^?2. These nanoparticles acted as sp³-carbon seeds in a subsequent 15 min Chemical Vapour Deposition run that allowed growing a 60–80 nm diamond film. Our previous study on Si(100) showed that detonation ND particles reacted with silicon between 800 and 900 °C and, as a consequence, no diamond film could be grown after Chemical Vapour Deposition (CVD). These findings demonstrated that the use of a thin silicon nitride buffer layer is preferable insofar as the growth of thin diamond films on silicon devices via nanoseeding is concerned.     

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the effects of atomic-hydrogen exposure on the structure and chemical bonding of the DLC films by photoelectron spectroscopy (PES) using synchrotron radiation and Raman spectroscopy. The fraction of sp³ bonds at the film surface, as evaluated from C1s spectra, increased at a substrate temperature of 400 °C by atomic-hydrogen exposure, whereas the sp³ fraction decreased at 700 °C with increasing exposure time. It was found that the sp³ fraction was higher at the surfaces than the subsurfaces of the films exposed to atomic hydrogen at both the temperatures. The Raman spectrum of the film exposed to atomic hydrogen at 400 °C showed that the clustering of sp² carbon atoms progressed inside the film near the surface even at such a low temperature as 400 °C.     

Structure of the silver containing diamond like carbon films: Study by multiwavelength Raman spectroscopy and XRD

In the present study structure of silver containing diamond like carbon (DLC:Ag) films deposited by reactive magnetron sputtering was investigated by X-ray diffractometry (XRD) and multiwavelength Raman spectroscopy. In the case of the DLC:Ag films containing low amount of silver, crystalline silver oxide prevails over silver. While at higher Ag atomic concentrations formation of the silver crystallites of the different orientations was observed. Surface enhanced Raman scattering (SERS) effect was detected for high Ag content in the films. For UV excited Raman spectra sp³ bonded carbon related Raman scattering T peak at ~ 1060 cm^− 1 was detected only for the films with the highest amount of silver (34.3 at.%). The dependence of the Raman scattering spectra parameters such as position of the G peak, G peak full width at half maximum (FWHM(G)), D/G peak area ratio on Ag atomic concentration in DLC:Ag film as well as Raman scattering spectra excitation wavelength were studied. The dependence on Ag amount in film was more pronounced in the case of the Raman scattering spectra excited by higher wavelength laser beam, while in the case of the spectra excited by 325 nm and 442 nm laser beams only weak dependence (or no dependence) was observed. Overall tendency of the decrease of the dispersion of the G peak with the increase of Ag atomic concentration was found. Thus sp³/sp² bond ratio in DLC:Ag film decreased with the increase of Ag atomic concentration in the films.     

Investigation of nanocrystalline diamond films grown on silicon and glass at substrate temperature below 400 °C

We present investigation of nanocrystalline diamond films deposited in a wide temperature range. The nanocrystalline diamond films were grown on silicon and glass substrates from hydrogen based gas mixture (methane and hydrogen) by microwave plasma CVD process. Film composition, nano-grain size and surface morphology were investigated by Raman spectroscopy and scanning electron microscopy. All samples showed diamond characteristic line centred at 1332 cm^− 1 in the Raman spectrum. Nanocrystalline diamond layers revealed high surface flatness (under 10 nm) with crystal size below 60 nm. Surface morphology of grown films was well homogeneous over glass substrates due to used mechanical seeding procedure. Very thin films (40 nm) were successfully grown on glass slides (i.e. standard size 1 × 3″). An increase in delay time was observed when the substrate temperature was decreased. A possible origin for this behaviour was discussed.     

Hydrogen plasma etching of diamond films deposited on graphite

Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH₄/15%H₂/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp³/sp² ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow.     

The CH stretching features on diamonds of different origins

Surface CH stretching features on diamonds from various sources have been explored using Fourier transform infrared spectroscopy and Raman spectroscopy. The exploration encompasses the samples of natural, meteoritic, and synthetic diamond crystallites produced by high-pressure/high temperature, and detonation methods. To obtain the infrared spectra, the diamond samples are first surface-cleaned by oxidation and then hydrogenated using atomic hydrogen created by hot tungsten filaments under vacuum. Sharp and distinct features, corresponding to the CH stretch of tertiary C on C(111)-1 × 1, are observed at 2835 cm^− 1 for samples of different origins, but the peak shape depends on the surface morphology. For meteoritic and detonation-synthesized diamonds, however, the 2835 cm^− 1 peak is completely missing. We attribute this observation to a domain size effect, where the sizes of the C(111)-1 × 1 facets created on these two diamond samples (3 and 5 nm in diameter, respectively) by H-etching are too small to yield the characteristic CH stretching feature. This study gives a detail analysis on the IR spectra of the CH stretching feature on various diamond and diamond films.     

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from −20 to −350 V) and the nitrogen background pressure (up to 10⁻³ Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp³ fractions between 84% and 88%, and mass densities around 3.2 g/cm³ in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around −90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below −200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp³ bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp² fraction, leading to a reduction in film density to 2.7 g/cm³.     

Direct formation of graphene layers on diamond by high-temperature annealing with a Cu catalyst

The formation of high-quality graphene layers on diamond was achieved based on a high-temperature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ~ 10¹³ cm^− 2 and ~ 670 cm²/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.     

Chemical analysis and vibrational properties of boronated tetrahedral amorphous carbon films

Boronated tetrahedral amorphous carbon (ta-C:B) films were prepared by filtered cathodic vacuum arc technique using boron mixed graphite targets. The effect of boron content on the chemical bonding and vibrational properties of these films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and Fourier transform infrared spectroscopy. It has been found that boron atoms are predominantly configured in a graphitic network, while the carbon atoms in the ta-C:B films are mainly in sp³ hybridization which tend to decrease as boron content increases. The Raman and infrared spectra of ta-C:B films both show prominent features in the regions of 1100–1900 cm^− 1 and 900–1600 cm^− 1 respectively. It was identified that the Raman parameters are strongly correlated with the boron content which is due to the clustering of sp² domains induced by B introduction. The activation of infrared spectrum of ta-C:B film is a consequence of heteroatomic (C–B) vibration combined with changes in the sp² carbon configuration. And the enhanced infrared absorption of ta-C:B with increased boron incorporation results from the increased effective charges in the delocalized sp² carbon phase.     

Effects of plasma treatments on the nitrogen incorporated nanocrystalline diamond films

The nitrogen incorporated nanocrystalline diamond (NCD) films were grown on n-silicon (100) substrates by microwave plasma enhanced chemical vapor deposition (MPECVD) using CH₄/Ar/N₂ gas chemistry. The effect of surface passivation on the properties of NCD films was investigated by hydrogen and nitrogen-plasma treatments. The crystallinity of the NCD films reduced due to the damage induced by the plasma treatments. From the crystallographic data, it was observed that the intensity of (111) peak of the diamond lattice reduced after the films were exposed to the nitrogen plasma. From Raman spectra, it was observed that the relative intensity of the features associated with the transpolyacetylene (TPA) states decreased after hydrogen-plasma treatment, while such change was not observed after nitrogen-plasma treatment. The hydrogen-plasma treatment has reduced the sp²/sp³ ratio due to preferential etching of the graphitic carbon, while this ratio remained same in both as-grown and nitrogen-plasma treated films. The electrical contacts of the as-grown films changed from ohmic to near Schottky after the plasma treatment. The electrical conductivity reduced from ~ 84 ohm^– 1 cm^− 1 (as-grown) to ~ 10 ohm^– 1 cm^− 1 after hydrogen-plasma treatment, while the change in the conductivity was insignificant after nitrogen-plasma treatment.     

Effect of anodic and cathodic treatments on the charge transfer of boron doped diamond electrodes

This paper is concerned with the study of the influence of electrochemical pre-treatments on the behavior of highly boron doped diamond electrodes. Anodic and cathodic preconditioning, performed during 10 s either with 10^− 4 A/cm^− 2 (10^− 3 C cm^− 2) or 10^− 1 A/cm^− 2 (1 C cm^− 2), has been studied. Cyclic voltammetry at as-deposited, anodically and cathodically treated electrodes, in presence of 2 redox couples serving as electrochemical probes is analyzed in the light of the surface characterization given by XPS chemical analysis. Ce^4+/3+ redox couple in 0.5 M H₂SO₄ medium and Fe(CN)₆^3−/4− redox couple in 0.1 M KOH medium, have been studied before and after the different treatments. The results of Mott–Schottky plots and current voltage curves are reported and show that the electrochemical response of BDD electrodes is very dependent on the current density involved in the electrochemical preconditioning. The modification of surface bond termination – either hydrogen or oxygen – studied by XPS analyses is also strongly dependent on electrochemical pre-treatment. In particular, it is evidenced that the most important conversion of surface functionalities from hydrogen to oxygen is obtained when the anodic treatment is performed with the smallest current density. Finally, a correlation between surface terminations and charge transfer is evidenced.     

High dose N ion implantation effects on surface treated UNCD films

Ion implantation is commonly used to modify the surface or near-surface properties of materials. In this work, plasma treated ultrananocrystalline diamond (UNCD) films were implanted using 100 and 200 keV high dose (10¹⁶ ions/cm²) nitrogen ions and annealed. Detailed studies have been carried out to reveal the structural and chemical states of the surface treated UNCD films before implantation, as-implanted, and after annealing by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electron field emission (EFE) measurements. The high dose N ion implantation induced the formation of amorphous phase, which are converted into graphitic phase after annealing, and improved the field emission properties of UNCD films. The improved field emission is attributed to the surface charge transfer doping mechanism.     

Growth of diamond films with high surface smoothness

Diamond films with highly smooth backside surface have been deposited by positively biasing the substrate during diamond growth in a hot-filament chemical vapor deposition (HFCVD) system. By bonding the diamond film on the glass and wet etching to remove silicon, the highly smooth diamond surface can be exposed and used directly for the fabrication of diamond devices.Silicon substrate was first treated by diamond powder of 625 nm in an ultrasonic bath. By positively biasing the substrate, electron bombardment during diamond growth increases the nucleation density from 10⁸ ∼ 10⁹ cm^− 2 to 4 × 10¹¹ cm^− 2. The surface smoothness on the backside of diamond film has thus been improved significantly, inducing root-mean-square roughness of 5 nm. Owing to the extremely high surface smoothness and the high crystalline quality on the backside of diamond film and the high diamond growth rate, the backside surface of the diamond film grown under electron bombardment is particularly suitable for device fabrication.     

Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films

Chemical vapor deposited diamond films grown in a hot filament reactor using three filament metals (tungsten, tantalum, and rhenium) have been analyzed for their metal impurity content. This is the first report wherein all three common CVD filament metals have been examined and a single technique used for diamond film analysis. Tungsten carbide filaments yielded the lowest impurity level (few ppm by mass), whereas rhenium yielded the highest (parts per thousand). The effects of filament temperature and addition of ammonia or oxygen to the reactant gas mixture were examined. A correlation was observed between the metal content of the product films and their quality, as judged using Raman spectroscopy. Films with the highest metal content yielded Raman spectra showing the lowest fluorescence background, the smallest sp² carbon contribution, and the narrowest 1332 cm⁻¹ diamond line.     

In situ reactivation of low-temperature thermionic electron emission from nitrogen doped diamond films by hydrogen exposure

Nitrogen doped, hydrogen terminated diamond films have shown a work function of less than 1.5 eV and thermionic electron emission (TE) has been detected at temperatures less than 500 °C. However, ambient exposure or extended operation leads to a deterioration of the emission properties. In this study thermionic electron emission has been evaluated for as-received surfaces and for surfaces after 18 months of ambient exposure. The initial TE current density of the freshly deposited diamond film was ~ 5 × 10^− 5 A/cm² at 500 °C. In contrast, the initial TE current density of a film aged for 18 months was ~ 1.8 × 10^− 9 A/cm² at 500 °C. The decreased emission current density is presumed to be a consequence of oxidation, surface adsorption of contaminants and hydrogen depletion from the surface layer. In situ reactivation of the aged film surface was achieved by introducing hydrogen at a pressure of 1.3 × 10^− 4 mbar and using a hot filament of a nearby ionization gauge to generate atomic and/or excited molecular hydrogen. After 2 h of exposure with the sample at 500 °C, the surface exhibited a stable emission current density of ~ 2.3 × 10^− 6 A/cm² (an increase by a factor of ~ 1300). To elucidate the reactivation process thermionic electron energy distribution (TEED) and XPS core level spectra were measured during in situ hydrogen exposure at 5 × 10^− 8 mbar. During the isothermal exposure it was determined that atomic or excited hydrogen resulted in a much greater increase of the TE in comparison to exposure to molecular hydrogen. During exposure at 400 °C the surface oxygen was substantially reduced, the TEED cut-off energy, which indicates the effective work function, decreased by ~ 200 meV, and the TE intensity increased by a factor of ~ 100. The increase in thermionic emission with hydrogen was ascribed to the reactivation of the surface through the formation of a uniform surface dipole layer and a reduction of the surface work function.     

785 nm Raman spectroscopy of CVD diamond films

Raman spectroscopy is a powerful technique often used to study CVD diamond films, however, very little work has been reported for the Raman study of CVD diamond films using near-infrared (785 nm) excitation. Here, we report that when using 785 nm excitation with 1 µm spot size, the Raman spectra from thin polycrystalline diamond films exhibit a multitude of peaks (over 30) ranging from 400–3000 cm^− 1. These features are too sharp to be photoluminescence, and are a function of film thickness. For films > 30 µm thick, freestanding films, and for films grown in diamond substrates the Raman peaks disappear. This suggests that the laser is probing the vibrations of molecular units at the grain boundaries of the disordered crystallites present at the interface between the diamond and substrate.