Effect of zinc oxide concentration on the core–shell ZnS/ZnO nanocomposites

In this work, synthesis and characterization of core–shell zinc sulphide (ZnS)/zinc oxide (ZnO) nanocomposites has been reported to see the effect of ZnO concentration in core–shell combination. The nascent as well as core–shell nanostructures were prepared by a chemical precipitation method starting with the synthesis of nascent ZnS nanoparticles. The change in morphological and optical properties of core–shell nanoparticles was studied by changing the concentration of ZnO for a fixed amount of ZnS. The nascent ZnS nanoparticles were of 4–6 nm in diameter as seen from TEM, each containing primary crystallites of size 1.8 nm which was estimated from the X-ray diffraction patterns. However, the particle size increases appreciably with the increase in ZnO concentration leading to the well known ZnO wurtzite phase coated with FCC phase of ZnS. Band gap studies were done by UV–visible spectroscopy and it shows that band gap tunability can be achieved appreciably in case of ZnS/ZnO core–shell nanostructures by varying the concentration of ZnO. Fourier transform infrared analysis also proves the formation of core–shell nanostructures. Photoluminescence studies show that emission wavelength blue shifts with the increase in ZnO concentration. These core–shell ZnS/ZnO nanocomposites will be a very suitable material for any type of optoelectronic application as we can control various parameters in this case in comparison to the nascent nanostructures.     

Effect of thermal processing on the microstructure and composition of Cu–Sb–Se compounds

We report on the effects of thermal processing on the microstructure and composition of a system with overall stoichiometry of 3Cu:1Sb:3Se with the aim of producing single-phase Cu₃SbSe₃. It was found that slow cooling from the melt produced a multiphase material consisting of Cu₂Se and CuSbSe₂, but devoid of Cu₃SbSe₃. Cooling rapidly from the melt resulted in three-phase microstructures consisting of Cu₂Se, CuSbSe₂, and Cu₃SbSe₃. Subsequent annealing of the three-phase material between 325 and 400 °C shifted the composition toward nearly pure Cu₃SbSe₃—the target compound of this work. The kinetics of the transformation into Cu₃SbSe₃ was successfully described using a modified Avrami model which suggests that diffusion is the rate-controlling step. Values of Young’s modulus and hardness, obtained by nanoindentation, are reported for Cu₂Se, CuSbSe₂, and Cu₃SbSe₃.     

Effect of nanophase concentration on the properties of metal-containing silicon–carbon nanocomposites

We have studied the effect of tungsten, molybdenum, and hafnium concentrations on the electrical conductivity, nanohardness, and elastic modulus of metal-containing silicon–carbon nanocomposite films. The results demonstrate that the addition of these metals to the films leads to the formation of metal carbide particles a few nanometers in size. At metal contents from 5 to 35 at %, the conductivity of the films varies over four orders of magnitude (from 10^–1 to 10³ S/cm). The composition dependences of the mechanical properties of the nanocomposites depend on the nature of the metal. We have analyzed the mechanisms underlying the effect of the metals on these properties.     

Effect of addition of Al and Cu on the properties of Sn–20Bi solder alloy

This study investigates the effect of the composite addition of Al and Cu on the microstructure, physical properties, wettability, and corrosion properties of Sn–20Bi solder alloy. Scanning electron microscopy and X-ray diffraction were used to identify the microstructure morphology and composition. The spreading area and contact angle of the Sn–20Bi–x (x?=?0, 0.1 wt% Al, 0.5 wt% Cu, and 0.1 wt% Al–0.5 wt% Cu) alloys on Cu substrates were used to measure the wettability of solder alloys. The results indicate that the alloy with 0.1 wt% Al produces the largest dendrite and the composite addition of 0.1 wt% Al and 0.5 wt% Cu formed Cu₆Sn₅ and CuAl₂ intermetallic compounds in the alloy structure. And the electrical conductivity of Sn–20Bi–0.1Al is the best, which reaches 5.32 MS/m. The spread area of the solder alloy is reduced by the addition of 0.1 wt% Al and 0.5 wt% Cu, which is 80.7 mm². The corrosion products of Sn–20Bi–x solder alloys are mainly lamellar Sn₃O(OH)₂Cl₂ and the corrosion resistance of 0.1 wt% Al solder alloy alone is the best. The overall corrosion resistance of Sn–20Bi–0.1Al–0.5Cu is weakened and the corrosion of solder alloy is not uniform.

     

Effect of doping Al on the liquid oxidation of Sn–Bi–Zn solder

The liquid oxidation behaviors of Sn–40Bi–2Zn and Sn–40Bi–2Zn–0.005Al solders were investigated from thermal dynamics and kinetics analysis. The characteristics of surface oxidation film at 170 °C were studied by thermo gravimetric analysis and X-ray photoelectron spectroscopy (XPS). Sn–40Bi–2Zn solder performed inferiorly in oxidation prevention performance, due to the formation of ZnO, which exhibits lower Gibbs free energy of formation and higher growth rate. Trace amount of Al addition, however, alleviated the oxidation behavior of Zn. XPS depth profile results indicated that the surface layer of Sn–40Bi–2Zn–0.005Al consisted of oxides of Al and Zn formed on the outer surface of the solder film and in the subsequent layer, mainly formed by the oxides of Sn, Bi. Al, basically formed as Al₂O₃, segregated towards the outer surface, seemed to deter the Zn oxidation on the solder surface.     

Effect of MWCNT alignment on mechanical and self-monitoring properties of extruded PET–MWCNT nanocomposites

Self-monitoring aligned MWCNT loaded PET composites, with different CNT content, were prepared via twin-screw extrusion starting from a PET/MWCNT masterbatch, and fully characterized. All electrically conductive samples showed self-monitoring ability, i.e. a variation in electrical resistance as a function of stress. Moreover, the insertion of MWCNTs resulted in mechanical reinforcement with respect to neat PET. It was found that both self-monitoring behavior and mechanical performance are directly related to MWCNT content and to the direction of applied stress with respect to CNT orientation. In particular, too high MWCNT content decreased sensitivity at low strain, whereas a minimum MWCNT content was required to insure ohmic conductivity.     

Effect of B2O3 on the densification and magnetic properties of Li–Zn ferrite

Densification, grain growth and magnetic properties of Li–Zn ferrite (Li_.30Zn_.4Fe_2.30O₄) doped with B₂O₃ as a sintering aid were investigated. B₂O₃ is a low melting point (460 °C) oxide and forms a liquid phase during sintering which affects the densification and grain growth of ferrites. Results showed that density and grain growth rate were sensitive to the B₂O₃ content and sintering temperature. At low amounts of B₂O₃ (<1 wt.%), an increase in the B₂O₃ content increased density and grain growth rate. The highest density and the maximum magnetization were obtained for the sample containing 1.0 wt.% B₂O₃ which was sintered at a lower temperature (1000 °C) for 1.5 h, in comparison with undoped samples. Higher B₂O₃ contents than 1.0 wt.% caused a decrease in density of samples due to secondary phases formation and evaporation of B₂O₃. The sample with the highest grain size showed the highest permeability and the lowest magnetic loss.     

Effect of Bi4B2O9 addition on the sintering temperature and microwave dielectric properties of BaO–Nd2O3–4TiO2 ceramics

The effects of Bi₄B₂O₉ addition on the sintering temperature, phase transition and microwave dielectric properties of BaO–Nd₂O₃–4TiO₂ (BNT) ceramics have been investigated. With 10 wt% Bi₄B₂O₉ addition, the sintering temperature of the BNT ceramics can be lowered down to about 1,150 °C. The secondary phase was observed at the level of 15 wt% Bi₄B₂O₉ addition. The Bi₄B₂O₉ addition can significantly affects the microwave dielectric properties. The Q × f ₀ value is a function of the sintering temperature and the Bi₄B₂O₉ content. For the samples sintered at 1,150 °C, Q × f ₀ value varies from 6,300 to 3,300 GHz as the Bi₄B₂O₉ addition increases from 5 to 20 wt%. The addition of Bi₄B₂O₉ does not induce much degradation in ε_r but modified the τ_f value to near zero. Typically, When 10 wt% Bi₄B₂O₉ is added, the τ_f of the ceramics could be tuned to a near-zero value (~1.2 ppm/°C), a substantial ε_r (~86) and Q × f ₀ (~4,670 GHz) could also be achieved simultaneously. The Bi₄B₂O₉ is an efficient sintering additive to decrease the sintering temperature and tune the τ_f value of the microwave dielectric materials for the practical microwave applications.     

Effect of Ni,Bi concentration on the microstructure and shear behavior of low-Ag SAC–Bi–Ni/Cu solder joints

This paper investigated the effect of Bi, Ni concentration on the microstructure and interfacial intermetallic compounds of low-Ag Sn–0.7Ag–0.5Cu–xBi–yNi/Cu solder joints by comparing with Sn–0.7Ag–0.5Cu (SAC0705)/Cu and Sn–3Ag–0.5Cu (SAC305)/Cu. Meanwhile, the shear behavior of the solder joints at both the bulk solder and soldering interface with various Bi, Ni content were also studied. Experimental results indicated that SAC0705–3.5Bi showed coarse microstructure due to the excessive growth of β-Sn dendritic crystal, which can be obviously suppressed by small amount of Ni element addition. Needle-like (Cu, Ni)₆Sn₅ appeared in the bulk solder of SAC–Bi–Ni/Cu, instead of the pipe-like Cu₆Sn₅ in SAC/Cu. Compare with SAC0705/Cu and SAC305/Cu, SAC–Bi–Ni/Cu showed higher shear strength at both the bulk solder and soldering interface. The increase of Bi content significantly increased the shear strength of Sn–0.7Ag–0.5Cu–xBi–yNi/Cu solder joints at the soldering interface. Brittle fracture appeared in the bulk solder of Sn–0.7Ag–0.5Cu–3.5Bi–0.05Ni/Cu solder joint. But this brittle failure can be suppressed by increasing the concentration of Ni in the solder alloys.     

Effect of Bi2O3 on structural and optical properties of Li2O·PbO·Bi2O3·B2O3 glasses

Journal of Materials Science: Materials in Electronics - The quaternary glass system has a composition of 30Li2O·20PbO·xBi2O3·(50-x)B2O3 (where x?=?0, 10, 20, 30, and...     

Effect of Te addition on some physical properties of the Se3S2 system and a study of the response to γ-irradiation

Glasses based on sulphur and tellurium were carefully characterized to establish the interdependence between chemical composition and the magnitudes of the physical parameters related to their use as infrared optical materials. Parameters considered in this paper are density, molar volume, transition temperatures, crystallization activation energy, decomposition energy, direct current (d.c.) electrical properties, optical energy gap and infrared transmission spectra in the range 400–6000 cm^–1. The irradiation has no detectable effect on both the d.c. conductivity of the bulk glass and the optical energy gap.     

Effect of nanosized graphite on properties of Sn–Bi solder

A novel Sn–Bi composite solder reinforced by nanosized graphite was studied. Effect of nanosized graphite content on spreadability was studied by spreading test. Microstructure of Sn–Bi solder and Sn–Bi composite solder was observed by scanning electron microscope. The tensile test and creep test for Sn–Bi solder and Sn–Bi composite solder joints were conducted in a micro-mechanical test system. The results show that the addition of nanosized graphite is harmful to the spreadability of Sn–Bi solder. The microstructure of Sn–Bi composite solder is refined gradually with the content of graphite increased. The ultimate tensile strength of Sn–Bi composite solders joints is reduced with the addition of nanosized graphite and the ultimate tensile strength of Sn–Bi + 0.07 wt% solder joint is almost unchanged compared with Sn–Bi solder joint. There is a great improvement in elongation of Sn–Bi + 0.07 wt% graphite solder joint. Furthermore, Sn–Bi + 0.07 wt% composite solder has a better creep performance compared with Sn–Bi solder.     

The influence of mechanochemical treatment of the Bi2O3–ZrO2 system on the structural and dielectric properties of the sintered ceramics

A powder mixture of -Bi₂O₃ and ZrO₂, both monoclinic, in the molar ratio 2 : 3, was mechanochemically treated in a planetary ball mill in an air atmosphere for up to 20 h, using steel vial and hardened-steel balls as the milling medium. Mechanochemical reaction leads to the gradual formation of an amorphous phase. After 5 h of milling the starting -Bi₂O₃ and ZrO₂ were transformed fully into a non-crystalline phase. After milling for various times the powders were compacted by pressing and isothermal sintering. The pressed and sintered densities depended on the milling time. Depending on the duration of the mechanochemical treatment and sintering temperature, the phases: -Bi₁₂(Zr _x Fe_1–x )O₂₀; Bi(Zr _x Fe_1–x )O₃ and Bi₂(Zr _x Fe_1–x )₄O₉ were obtained by reactive sintering, whereby the Fe originates from vial and ball debris. The dielectric permittivity of the sintered samples significantly depends on the milling time. Samples milled for 10 and 15 h and subsequently sintered at 800 °C for 24 h exhibit a hysteresis dependence of the dielectric shift (in altering electric fields higher than 10 kV/cm at room temperature), confirming that the synthesized materials possess ferroelectric properties.     

Effect of Bi content on spalling behavior of Sn–Bi–Zn–Ag/Cu interface

The effect of the Bi content on the formation of intermetallic compounds (IMCs) layers between the Sn-xBi-0.9Zn-0.3Ag lead-free solder (with x = 1, 2, 3 and 4, in weight percent, hereafter) and Cu substrate was investigated. The structure of the IMC layer in the soldered interface varies apparently with increasing the Bi content. When the Bi content is 1 wt%, the interface soldered is consisted of CuZn and Cu₆Sn₅ IMC layers, which are separated by an intermediate solder layer. As the Bi content increases, the spalling phenomenon tends to disappear. Moreover, the layer between the Sn-2Bi-0.9Zn-0.3Ag solder and Cu substrate is thicker than others. The evolution of the soldered interfacial structure could be attributed to the existence of Bi.     

Effects of dispersion and interfacial modification on the macroscale properties of TiO2 polymer–matrix nanocomposites

This paper quantifies how the quality of dispersion and the quality of the interfacial interaction between TiO₂ nanoparticles and host polymer independently affect benchmark properties such as glass transition temperature (T_g), elastic modulus and loss modulus. By examining these composites with differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA) and scanning electron microscopy (SEM), we demonstrate changes in properties depending on the adhesive/wetting or repulsive/dewetting interactions the nanoparticles have with the bulk polymer. We further quantify the dispersion of TiO₂ nanoparticles in polymethylmethacrylate (PMMA) matrices by a digital–optical method and correlate those values to the degree of T_g depression compared to neat PMMA. Samples with the same weight percent of nanoparticles but better dispersion show larger shifts in T_g.     

Effect of Ca/Si ratio on the microstructures and properties of CaO–B2O3–SiO2 glass-ceramics

CaO–B₂O₃–SiO₂ glass-ceramics were synthesized by sol–gel method, and the effect of Ca/Si ratio on the microstructures, electrical properties and mechanical characteristics of this ternary system was investigated. The results showed that the increase of CaO content is favorable for the crystallization of CaO–B₂O₃–SiO₂ system and formation of the desired glass-ceramics. The bending strength of the sintered glass-ceramics increases with CaO content by increasing of crystalline phases. When the Ca/Si ratio increases, the dielectric constant (ε _r) decreases and loss (tanδ) increases gradually. The thermal expansion coefficient (TEC) enhances by increasing CaO contents due to the formation of other crystal phases with large TEC value. The glass-ceramics exhibit low dielectric constant and loss (ε _r < 4.7, tanδ < 5 × 10^-4 at 1 MHz), high resistivity (ρ > 10¹² Ω · cm), as well as excellent mechanical properties (σ ≈ 160 MPa, α ≈ 3.6 × 10⁻⁶/°C).     

Effect of MoO3, Nd2O3, and RuO2 on the crystallization of soda–lime aluminoborosilicate glasses

The effect of adding Nd₂O₃, MoO₃, and RuO₂ separately or simultaneously on the crystallization of a soda–lime aluminoborosilicate glass during cooling from the melt or glass heating was studied by DTA, XRD (at room and high temperature), SEM, Raman, and optical absorption. Nd₂O₃ addition strongly reduces liquid–liquid phase separation and crystallization of calcium and sodium molybdates (CaMoO₄ (powellite) and Na₂MoO₄) in Mo-rich compositions as long as Nd³⁺ ions remain solubilized in the glassy network. This suggests that (MoO₄)^2? entities and Nd³⁺ ions are close to each other in the glass structure (Nd³⁺ ions would prevent the clustering of molybdate entities). The effect of MoO₃ addition in Nd-rich compositions is more complex since an increase of the solubility of Nd₂O₃ is observed, whereas the nucleation rate of an Nd-rich silicate apatite (Ca₂Nd₈(SiO₄)₆O₂) in the bulk of the glass increases as soon as molybdates crystallized. The addition of RuO₂ has a nucleating effect on apatite crystallization in the bulk but not on molybdates crystallization.     

Effects of the electric field on microstructure and electrical properties of ZnO–Bi2O3–Co2O3 varistor by flash sintering

Journal of Materials Science: Materials in Electronics - The dense bulk ZnO–Bi2O3–Co2O3 varistor ceramics were obtained via flash sintering. The effect of electric field on...     

Effect of donor concentration on the PTCR behavior of Y-doped BaTiO3–(Bi1/2Na1/2)TiO3 ceramics

Lead-free positive temperature coefficient of resistivity (PTCR) ceramics of 99 mol%BaTiO₃–1 mol%(Bi_1/2Na_1/2)TiO₃ (BBNT1) and 90 mol%BaTiO₃–10 mol%(Bi_1/2Na_1/2)TiO₃ (BBNT10) were prepared by the conventional solid state reaction method. The effect of donor concentration on the microstructure and PTCR behavior of the BBNT ceramics were investigated. The results show that all BBNT1 and BBNT10 ceramics have formed a single perovskite structure with tetragonal phase when sintered in air or N₂. 0.2 mol% Y-doped BBNT1, sintered at 1,330 °C for 30 min in air, has room-temperature resistivity (ρ₂₅) of ~60 Ω cm and resistivity jump [maximum resistivity (ρ_max)/minimum resistivity (ρ_min)] of ~4.2 orders of magnitude with T_c about 150 °C. 0.4 mol% Y-doped BBNT10, sintered at 1,250 °C for 3 h in N₂, has ρ₂₅ of ~100 Ω cm and resistivity jump of ~4.7 orders of magnitude with T_c about 180 °C. The BBNT10 has higher breakdown voltage of 200 V/mm (a.c.) than that of BBNT1, making these BBNT10 ceramics promising candidates for high temperature lead-free PTCR materials.