面向定量化红外遥感的热电堆探测器定标技术

从红外遥感信息定量化的发展要求出发,分析了测辐射热计、热电堆探测器和热释电探测器的响应特性,选择薄膜热电堆探测器TS-76作为传递标准探测器.搭建高精度光谱响应率定标系统,使用宽波段可调谐激光器和绝对低温辐射计对TS-76探测器的线性、空间均匀性以及重复性进行了标定.按照国际通用不确定度评估规范,对光谱响应率测量结果进行不确定度分析和评估,联合不确定度小于1.5%,并根据实验结果提出实现高精度中远红外辐射定标的技术方案,证明基于热电堆探测器的红外辐射定标技术可以有效缩短标准传递的链路,提高定标的精度.     

Calibration of pressure sensors in an industrial environment

National Measurements Institutes calibrate vacuum pressure sensors a few gauges at a time in a time-consuming fashion, resulting in an accurate calibration with small uncertainty estimates. A manufacturer produces a comparatively large number of sensors a day which must be economically calibrated. Here, we investigate a procedure for rapid calibration of combination vacuum gauges while following as closely as possible the relevant norms published by the international standards organizations. The investigated procedure increases the uncertainty estimate by up to 10%, but the gauges are still within common accuracies (<15% of reading in the range of 1×10⁻⁶ to 1×10⁻² hPa) for this type of measurement instrument.     

基于探测器的成象光谱仪绝对辐射定标方法

用一组窄带滤光片、简易辐亮度计和硅光二极管探测器设计了绝对型光谱辐亮度计。精确测量滤光片的光谱透过函数，计算辐亮度计的视场，标定探测器的绝对光谱响应度，成为绝对光谱辐亮度计，用来标定成象光谱和其它光学遥感器，并与基于光谱辐照度灯进行辐射定标的传统方法进行了比较。结果表明，基于探测器进行辐射定标的方法是一种提高光学遥感器定标精度的途径，而且是佐证其它定标方法可靠性的一种手段。     

Improvement of responsivity of a room temperature 10.6 μm sensorusing an intra-band transition

An improvement in the responsivity of room temperature 10.6-μm sensors based on an intra-band transition is proposed. The sensor, fabricated in p-type germanium, forms a resonator. An improvement of 20 dB in the responsivity is obtained at zero bias voltage. This is comparable to values for sensors based on uncooled HgCdTe     

Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays

Film‐based photodetectors have shown superiority for the fabrication of photodetector arrays, which are desired for integrating photodetectors into sensing and imaging systems, such as image sensors. But they usually possess a low responsivity due to low carrier mobility of the film consisting of nanocrystals. Large‐grain semiconductor films are expected to fabricate superior‐responsivity photodetector arrays. However, the growth of large‐grain semiconductor films, normally with a nonlayer structure, is still challenging. Herein, this study introduces a solid‐state reaction method, in which the growth rate is supposed to be limited by diffusion and reaction rate, for interface‐confined epitaxial growth of nonlayer structured NiSe films with grain size up to micrometer scale on Ni foil. Meanwhile, patterned growth of NiSe films allows the fabrication of NiSe film based photodetector arrays. More importantly, the fabricated photodetector based on as‐grown high‐quality NiSe films shows a responsivity of 150 A W^?1 in contrast to the value of 0.009 A W^?1 from the photodetector based on as‐deposited NiSe film consisting of nanocrystals, indicating a huge responsivity‐enhancement up to four orders of magnitude. It is ascribed to the enhanced charge carrier mobility in as‐grown NiSe films by dramatically decreasing the amount of grain boundary leading to scattering of charge carrier.     

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m⁻²), along with a responsivity as high as 1.6 A W⁻¹ (wavelength = 465 nm) for a dark current of 0.24 A m⁻² (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.     

Fabrication,calibration, and preliminary testing of microcantilever‐based piezoresistive sensor for BioMEMS applications

In this study, the authors demonstrate the fabrication, calibration, and testing of a piezoresistive microcantilever‐based sensor for biomedical microelectromechanical system (BioMEMS) application. To use any sensor in BioMEMS application requires surface modification to capture the targeted biomolecules. The surface alteration comprises self‐assembled monolayer (SAM) formation on gold (Au)/chromium (Cr) thin films. So, the Au/Cr coating is essential for most of the BioMEMS applications. The fabricated sensor uses the piezoresistive technique to capture the targeted biomolecules with the SAM/Au/Cr layer on top of the silicon dioxide layer. The stiffness (k) of the cantilever‐based biosensor is a crucial design parameter for the low‐pressure range and also influence the sensitivity of the microelectromechanical system‐based sensor. Based on the calibration data, the average stiffness of the fabricated microcantilever with and without Au/Cr thin film is 141.39 and 70.53 mN/m, respectively, which is well below the maximum preferred range of stiffness for BioMEMS applications. The fabricated sensor is ultra‐sensitive and selective towards Hg²⁺ ions in the presence of other heavy metal ions (HMIs) and good enough to achieve a lower limit of detection 0.75 ng/ml (3.73 pM/ml).Inspec keywords: molecular biophysics, bioMEMS, chemical sensors, microfabrication, cantilevers, microsensors, self‐assembly, monolayers, gold, piezoresistive devices, calibration, chromium, thin film sensors, mercury (metal), silicon compoundsOther keywords: microcantilever‐based piezoresistive sensor, BioMEMS application, biomedical microelectromechanical system application, targeted biomolecules, piezoresistive technique, cantilever‐based biosensor, microelectromechanical system‐based sensor, microcantilever fabrication, calibration, surface modification, surface alteration, self‐assembled monolayer, SAM, coating, thin films, HMI, heavy metal ion, Au‐Cr‐SiO₂ , Hg     

A Highly Responsive Organic Image Sensor Based on a Two‐Terminal Organic Photodetector with Photomultiplication

Highly responsive organic image sensors are crucial for medical imaging applications. To enhance the pixelwise photoresponse in an organic image sensor, the integration of an organic photodetector with amplifiers, or the use of a highly responsive organic photodetector without an additional amplifying component, is required. The use of vertically stacked, two‐terminal organic photodetectors with photomultiplication is a promising approach for highly responsive organic image sensors owing to their simple two‐terminal structure and intrinsically large responsivity. However, there are no demonstrations of an imaging sensor array using organic photomultiplication photodetectors. The main obstacle to a sensor array is the weak‐light sensitivity, which is limited by a relatively large dark current. Herein, a highly responsive organic image sensor based on monolithic, vertically stacked two‐terminal pixels is presented. This is achieved using pixels of a vertically stacked diode‐type organic photodetector with photomultiplication. Furthermore, applying an optimized injection electrode and additionally stacked rectifying layers, this two‐terminal device simultaneously demonstrates a high responsivity (>40 A W^?1), low dark current, and high rectification under illumination. An organic image sensor based on this device with an extremely simple architecture exhibits a high pixel photoresponse, demonstrating a weak‐light imaging capability even at 1 µW cm^?2.     

Monochromator-Based Absolute Calibration of Radiation Thermometers

A monochromator integrating-sphere-based spectral comparator facility has been developed to calibrate standard radiation thermometers in terms of the absolute spectral radiance responsivity, traceable to the PTB cryogenic radiometer. The absolute responsivity calibration has been improved using a 75 W xenon lamp with a reflective mirror and imaging optics to a relative standard uncertainty at the peak wavelength of approximately 0.17 % (k = 1). Via a relative measurement of the out-of-band responsivity, the spectral responsivity of radiation thermometers can be fully characterized. To verify the calibration accuracy, the absolutely calibrated radiation thermometer is used to measure Au and Cu freezing-point temperatures and then to compare the obtained results with the values obtained by absolute methods, resulting in T ? T ₉₀ values of +52 mK and ?50 mK for the gold and copper fixed points, respectively.     

Kinetic Inductance Phonon Sensors for the Cryogenic Dark Matter Search Experiment

An important challenge faced by phonon-mediated detectors for the next generation of dark matter detectors (>100 kg) is to instrument large target mass at low cost, while maintaining the large background suppression offered by the combination of phonons and ionization (or scintillation) measurement. Kinetic inductance phonon sensors, operating far below the superconducting transition temperature, offer an interesting solution to this scaling problem. They do not critically depend on the uniformity of T _c and their resonant-cavity readout is easy to multiplex. We are studying a microstrip (two parallel planes) transmission line architecture that may offer the additional advantage of a separation of functions: the main detector is just covered by an unpatterned aluminum film and the number of quasi-particles created in it by athermal phonons are sensed by a second film, which has been independently patterned and is mounted a few microns away from the detector. We present current results on the responsivity and noise of large area (∼33 mm²) microstrip kinetic inductance phonon sensors.      

Improvements of transparent electrode materials for GaN metal–semiconductor–metal photodetectors

Metal–semiconductor–metal (MSM) photodetectors based on GaN grown on (0 0 0 1) sapphire were fabricated and characterized. The responsivity of the Pt/GaN MSM device is low due to the blocking of incoming light by Pt electrodes. Although this problem can be partly solved by the transparent indium–tin oxide (ITO) contact, the range of operation voltage for ITO/GaN MSM devices is limited by the internal gain. Transparent multilayered electrode is proposed in this work by incorporating various intermediate layers (Ti, TiO₂, and Ti/TiO₂). The dark current of the ITO/TiO₂/GaN contact is two orders of magnitude lower than that of the ITO/Ti/GaN contact. The thin TiO₂ barrier also contributes the lower responsivity of the ITO/TiO₂/GaN structure. By introducing a thin Ti/TiO₂ interlayer at the ITO–GaN interface, a significant decrease in the dark current and an increase in responsivity can be achieved simultaneously. The photo-to-dark current contrast can reach 6×l0⁵, and the responsivity shows no discernible internal gain under a bias between 2.5 and 7.5 V.     

Flexible Organic/Inorganic Hybrid Near‐Infrared Photoplethysmogram Sensor for Cardiovascular Monitoring

Wearable photoplethysmogram (PPG) sensors offer convenient and informative measurements for evaluating daily physiological states of individuals. In this work, epidermal and flexible near‐infrared (NIR) PPG sensors integrating a low‐power, high‐sensitivity organic phototransistor (OPT) with a high‐efficiency inorganic light‐emitting diode are developed. By exploiting an organic bulk heterojunction active layer and a bilayer gate dielectric design, a low voltage (<3 V) operated OPT with NIR responsivity as high as 3.5 × 10⁵ A W^?1 and noise equivalent power of 1.2 × 10^?15 W Hz^?1/2 is achieved, greatly surpassing commercial available silicon‐based photodetectors. In addition, the ultrathin encapsulation structure renders the device highly flexible and allows transfer printing of the device directly onto human skin. It is demonstrated that the epidermal/flexible PPG sensors are capable of continuously monitoring heart rate variability and precisely tracking the changes of pulse pressure at different postures of human subjects with the aid of electrocardiogram monitoring, exhibiting more reliable performance than commercial PPG sensors while consuming less power. The study suggests that the hybrid PPG sensor design may provide a promising solution for low‐power, real‐time physiological monitoring.     

Uncertainty Calculation for Spectral-Responsivity Measurements

This paper discusses a procedure for measuring the absolute spectral responsivity of optical-fiber power meters and computation of the calibration uncertainty. The procedure reconciles measurement results associated with a monochromator-based measurement system with those obtained with laser sources coupled with optical fiber. Relative expanded uncertainties based on the methods from the Guide to the Expression of Uncertainty in Measurement and from Supplement 1 to the “Guide to the Expression of Uncertainty in Measurement”-Propagation of Distributions using a Monte Carlo Method are derived and compared.An example is used to illustrate the procedures and calculation of uncertainties.     

Comparison of a Detector-Based Near-IR Radiance Scale to an ITS-90 Calibrated Radiation Thermometer

Integrating-sphere-input InGaAs radiometers (ISIR) have been developed at the National Institute of Standards and Technology (NIST) to extend the detector-based calibration of radiation thermometers from the Si range to the near-infrared (NIR). These near-infrared radiometers are used to determine the reference spectral irradiance responsivity scale based on the primary-standard cryogenic radiometer. The irradiance responsivity scale is then propagated to spectral radiance at the exit port of an integrating sphere. The near-infrared radiation thermometer (NIRT) is calibrated using this detector-based radiance scale. The first phase of this research work is reported here where the relative spectral radiance responsivity of the NIRT has been determined using a monochromator-based system. Thereafter, the relative spectral responsivity of the NIRT is converted into an absolute responsivity using the radiances from the Zn fixed point blackbody. Then, the NIRT is used to extend these calibrations for temperature measurements between 157 °C and 1000 °C. The NIRT has also been calibrated in this temperature range using the five, fixed point blackbodies of the ITS-90. The two different calibration approaches for temperature measurements are compared.     

New PTB Setup for the Absolute Calibration of the Spectral Responsivity of Radiation Thermometers

The paper describes the new experimental setup assembled at the PTB for the absolute spectral responsivity measurement of radiation thermometers. The concept of this setup is to measure the relative spectral responsivity of the radiation thermometer using the conventional monochromator-based spectral comparator facility also used for the calibration of filter radiometers. The absolute spectral responsivity is subsequently measured at one wavelength, supplied by the radiation of a diode laser, using the new setup. The radiation of the diode laser is guided with an optical fiber into an integrating sphere source that is equipped with an aperture of absolutely known area. The spectral radiance of this integrating sphere source is determined via the spectral irradiance measured by a trap detector with an absolutely calibrated spectral responsivity traceable to the primary detector standard of the PTB, the cryogenic radiometer. First results of the spectral responsivity calibration of the radiation thermometer LP3 are presented, and a provisional uncertainty budget of the absolute spectral responsivity is given.     

Fast silicon p doped low temperature bolometer

The construction of a fast silicon p doped low temperature bolometer is described. It is a 5 × 5 × 0.3 mm Si <100 > n-type chip whose surface has been implanted with p doses of the order of 10¹⁸cm⁻³. The bolometer has a response time better than 1 μs, a responsivity of 10⁴VW⁻¹ and a NEP of .     

A strategy for detection and isolation of sensor failures and process upsets

A novel approach is proposed to isolate sensors that are affected by the root cause of nonconforming operation and to distinguish between failed sensors and process upsets. Systems having multivariate nature can be monitored by building a principal component analysis (PCA) model using historical data. T² and sum-of-squared-prediction error (SPE) of the calibration model facilitate fault detection and isolation on-line. These two measures are complementary in explaining the events captured and not captured by the model. In this paper, we put more emphasis on the importance of using the T² and the SPE together for fault detection and identification. Correlation coefficient criterion was utilized to infer about the state of the correlation structure between one sensor and its closest neighbor for distinguishing between sensor failures and process upsets. Faulty measurements were reconstructed from available sensors using the calibration model and an optimization algorithm which in turn unveiled more process upsets. The strategy is illustrated on a benchmark industrial liquid-fed ceramic melter.     

Distinguishable Detection of Ultraviolet,Visible, and Infrared Spectrum with High‐Responsivity Perovskite‐Based Flexible Photosensors

Distinguishable detection of the ultraviolet, visible, and infrared spectrum is promising and significant for the super visual system of artificial intelligences. However, it is challenging to provide a photosensor with such broad spectral response ability. In this work, the ultraviolet, visible, and infrared spectrum is distinguished by developing serial photosensors based on perovskite/carbon nanotube hybrids. Oraganolead halide perovskites (CH₃NH₃PbX₃) possess remarkable optoelectronic properties and tunable optical band gaps by changing the halogens, and integration with single‐walled carbon nanotubes can further improve their photoresponsivities. The CH₃NH₃PbCl₃‐based photosensor shows a responsivity up to 10⁵ A W^?1 to ultraviolet and no obvious response to visible light, which is superior to that of most ultraviolet sensors. The CH₃NH₃PbBr₃‐based photosensor exhibits a high responsivity to visible light. Serial devices of the two hybrid photosensors with comparable electric and sensory performances can distinguish the spectrum of ultraviolet, visible, and infrared even with varying light intensities. The photosensors also demonstrate excellent mechanical flexibility and bending stability. By taking full advantages of the oraganolead halide perovskites, this work provides flexible high‐responsivity photosensors specialized for ultraviolet, and gives a simple strategy for distinguishable detection of ultraviolet, visible, and infrared spectrum based on the serial flexible photosensors.     

Absolute Radiation Thermometry in the NIR

A near infrared (NIR) radiation thermometer (RT) for temperature measurements in the range from 773 K up to 1235 K was characterized and calibrated in terms of the “Mise en Pratique for the definition of the Kelvin” (MeP-K) by measuring its absolute spectral radiance responsivity. Using Planck’s law of thermal radiation allows the direct measurement of the thermodynamic temperature independently of any ITS-90 fixed-point. To determine the absolute spectral radiance responsivity of the radiation thermometer in the NIR spectral region, an existing PTB monochromator-based calibration setup was upgraded with a supercontinuum laser system (0.45 \(\upmu \hbox {m}\) to 2.4 \(\upmu \hbox {m}\)) resulting in a significantly improved signal-to-noise ratio. The RT was characterized with respect to its nonlinearity, size-of-source effect, distance effect, and the consistency of its individual temperature measuring ranges. To further improve the calibration setup, a new tool for the aperture alignment and distance measurement was developed. Furthermore, the diffraction correction as well as the impedance correction of the current-to-voltage converter is considered. The calibration scheme and the corresponding uncertainty budget of the absolute spectral responsivity are presented. A relative standard uncertainty of 0.1 % \((k=1)\) for the absolute spectral radiance responsivity was achieved. The absolute radiometric calibration was validated at four temperature values with respect to the ITS-90 via a variable temperature heatpipe blackbody (773 K ...1235 K) and at a gold fixed-point blackbody radiator (1337.33 K).     

Atomically Thin Oxyhalide Solar‐Blind Photodetectors

2D wide‐bandgap semiconductors demonstrate great potential in fabricating solar‐blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar‐blind photodetectors still limits their practical applications. Here, high‐responsivity solar‐blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W^?1 and a specific detectivity of 2.2 × 10¹⁰ Jones under 250 nm illumination with 17.8 µW cm^?2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W^?1 at 450 K under solar‐blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar‐blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.