IPM（智能功率模块）中单片IC的设计

本文介绍了新一代功率器件ＩＰＭ，即智能功率模块的基本组成及技术。对其中的设计重点单片ＩＣ进行了优化设计，使之不仅具有通常的驱动和过流、短路、过热、欠压等保护功能，而且保护电路本身具有延时智能处理的功能。该电路还具有合适的光耦接口，以同计算机相连，达到智能控制的目的。     

SEMiX and SKYPER——一种具有灵活驱动的智能模块

为了寻求高性价比的逆变电源解决方案，现代功率转换电路的设计迫切需要接口简单、结构紧凑的IGBT模块。市场对模块提出了更新的要求如：尽量低的高度：交、直流端子分列于模块两端；驱动器位于模块顶部。这些要求导致了SEMiX的诞生。SEMiX模块平台可以有效地推动功率回路的低电感设计。此外，本文还介绍了一种新的模块驱动方案SKYPER。SKYPER是一种即插式栅极驱动芯，它仅含最基本的驱动和保护功能。它与模块之间的匹配在本文中是通过驱动SEMiX模块的实例来说明的SEMiX与SKYPER的组合具备了智能功率模块的功能，但在开关特性的控制上，这种组合提供了现多的灵活性，从而为模块化逆变器的设计提供了一种方便的功能单元。     

X 波段功率驱动模块的设计与实现

本文论述了一种X波段10W功率驱动模块的设计和实施方案,对模块的高频部分和偏压电路的工作原理和设计思想进行了论述。功率模块的偏压电路可实现模块的供电、调制、保护和温度补偿等功能。功放模块的测试结果表明,模块输出功率大于10W、上升下降沿小于150ns,杂散小于-65dBc。     

SEMiX and SKYPER——一种具有灵活驱动的智能模块

为了寻求高性价比的逆变电源解决方案．现代功率转换电路的没计迫切需要接口简单、结构紧凑的IGBT模块。市场对模块提出了史新的要求．如：尽量低的高度，交、直流端子分列于模块的两端，驱动器位于模块的项部．这些要求导致了SEMiX的诞生。SEMiX模块半台可以有效地推动功率回路的低电感设计。此外，文中还介绍了一种新的模块驱动方案SKYPER，它是一种即插式栅极驱动芯．仅含最基本的驱动和保护功能。它与模块之间的匹配在文中是通过驱动SEMiX模块的实例来说明的。SEMiX与SKYPER的组合具备了智能功率模块的功能．但在开关特性的控制上．这种组合提供了吏多的灵活性．从而为模块化逆变器的设计提供了一种方便的功能单元。     

高压大功率IGBT的驱动保护方案研究

在高压大功率逆变器的研制过程中，为了解决大功率IGBT(200A／3300V)的驱动问题，选用了Concep公司的集成驱动模块2SD315AI-33。该模块驱动功率大，有完善的保护功能，控制电路和驱动模块之间采用光纤隔离，避免了主电路对控制电路的干扰，保证了系统的可靠运行。     

基于HVIPM模块的电力机车变频控制

三菱公司在电力机车领域发展了一门新的技术，就是采用基于新一代高压智能功率模块（HVIPM）两电平变频控制，该产品紧凑，轻巧，而且在模块内部集成了驱动电路和各种保护功能。     

IGBT驱动模块M57962AL的应用研究

IGBT专用驱动模块M57962AL适于驱动大功率器件，可根据其内部的自保护功能对其应用电路进行安全可靠设计。该模块采用双电源驱动，有过流过压检测电路和保证IGBT可靠通断电路。总之，能够安全地驱动开关、变频器中的大功率IGBT。     

SiC器件在大功率LD驱动源模块中的应用

介绍了SiC功率器件的应用优势并将其应用到了大功率LD驱动源模块中;对SiC MOSFET的开关参数及特性进行了分析,并设计了一种简单实用的SiC隔离驱动。本文应用SiC器件设计了一款120V/120A全SiC LD驱动源模块,功率模块主电路拓扑采用四路交错并联Buck电路,电路中的开关管和二极管全部使用SiC功率器件,功率模块最高效率达到98%。     

某光电装备电机驱动电路失效分析

驱动电路的性能很大程度上影响整个系统的工作性能。驱动电路的设计中主要考虑功能和性能等方面的因素。本文首先介绍了某平台的电机驱动电路,然后就实际工作及实验中驱动电路出现的失效信息作以分析,对问题进行总结:导致样品失效原因是由于电机产生的反电动势使功率模块内部的三极管芯片产生表面击穿,致使电源与地短路,产生大电流导致功率模块与继电器以及三极管烧毁。最后并提出了解决方案。     

电动汽车用非车载充电桩后级DC模块设计与实现

根据电动汽车充电的非车载充电桩后级DC模块主要技术指标,提出了以Boost-Buck变换器拓扑作为主电路的设计方案。对主电路功率器件进行选型与分析,对控制电路,采样电路,驱动电路以及通信电路等进行设计。最后搭建了DC模块实验平台,实验获取了主电路波形和驱动电路波形,同时对DC模块全功率范围效率进行测试,实验结果验证了系统满足设计指标的要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.