Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease of reflectance. The longer is the anodizing time, the lower is the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in short wavelength range. A minimum reflectance of 3.86 % at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.     

Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

Porous silicon(PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte.Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover,the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated.The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance.The longer the anodizing time is,the lower the reflectance.Moreover,an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range.A minimum reflectance of 3.86%at 460 nm is achieved for a short anodizing time of 2 min.Furthermore,the reflectance spectrum of the sample,which was etched in 3 vol.%TMAH for 25 min and then anodized for 20 min,is extremely flat and lies between 3.67%and 6.15%in the wavelength range from 400 to 1040 nm.In addition,for a short anodizing time,a slight increase in the effective carrier lifetime is observed.Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.     

Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

Texturization of mono-crystalline silicon solar cell by chemical anisotropic etching is still a key issue due to metal ions contamination and consumption of large amount of isopropyl alcohol (IPA) in a conventional mixture of potassium hydroxide (KOH) or sodium hydroxide (NaOH) and IPA. In this study, etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without addition of surfactant. Experiments were carried out in different TMAH concentration solutions at different temperatures for different etching time. The surface phenomena, etching rates, surface morphology and surface reflectance have been analyzed. Experimental results show that the resulted surface covered with uniform pyramids can be realized due to small changes of etching rates during the etching process. The etching mechanism has been explained basing on the experimental results and the theoretical considerations. It was suggested that all the components in the TMAH solutions play important roles in the etching process. Moreover, TMA+ ions may increase the wettability of the textured surface. A good textured surface can be obtained on conditions that the absorption of OH- /H2O is equilibrium with that of TMA+/SiO2(OH)22-.     

1.3μm high—power superluminescent diode

The result of the evaporation of Sio/SiO2 two layer antireflection coatings monitored by the MODEL IL 400 DEPOSITION CONTROLLER is re-ported.A superluminescent diode with high output power is fabricated by evaporate-ing antireflection coating on the front facet of 1.3цm buried heterostructure laser.     

Pulsed laser treatment of plasma sprayed coatings

A pulsed CO₂-TEA laser was used to melt the surface of plasma-sprayed coatings. An analysis of the laser parameters on the heat transfer is made: the melt depth and the surface temperature were calculated for different laser inputs. It was found that the pulse length must be in the range of 20 to 40 μ s in order to fill up the pores of the coating and to keep the surface temperature below the boiling range. Experimental results on surface modification are explained in terms of power density.     

Correlation of in-situ reflectance spectra and resistivity of GaN/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> interfacial layer in metalorganic chemical vapor deposition

The correlation between the resistivity of an undoped GaN/Al₂O₃ interfacial layer and in-situ reflectance spectrum in metalorganic chemical vapor deposition and the mechanism of this correlation were investigated. The first minimum reflectance during the initial high-temperature GaN growth was found to be a good indicator of the resistivity of the GaN buffer. The background electron concentration and mobility were both higher in the samples with higher indicative reflectance at that point. The resistivity of the GaN buffer layer was predominantly determined by an ∼0.25-μm-thick layer near the GaN/Al₂O₃ interface. Atomic force microscope (AFM) and high-resolution x-ray diffraction (HRXRD) results showed that the samples with higher indicative reflectance had smaller sized but higher density nuclei before the high-temperature GaN growth and lower screw threading dislocation (TD) density in the initially grown GaN. The difference in the background electron concentration and mobility of the interfacial layer was related to the relatively higher concentration of the O and Al diffused from Al₂O₃, which is also dependent on the size and density of the nuclei. These differences were found not to affect the structural and electrical properties or the surface morphology of AlGaN/GaN high electron-mobility transistors (HEMTs, except for the buffer conduction) when the GaN buffer is thick enough (e.g., ∼2.5 μm).     

New spray and wait protocol with node activity in heterogeneous delay tolerant networks

The spray and wait protocol is a classic copy-limited spraying protocol in delay tolerant networks, in which, the binary spray mode can be improved for heterogeneous delay tolerant networks. In this article, a new conception of node activity was defined to weigh the importance of nodes in aspect of message dissemination in the whole network. A new spray and wait protocol with node activity was proposed to improve the performance in heterogeneous delay tolerant networks. A mathematical model used under varieties of the spraying protocols was also proposed to analyze the expected delay of the protocol. Simulations show that the spray token proportion with node activity is optimal and the new protocol is of better performance than other related protocols. Therefore, this protocol has high efficiency and good scalability.     

GaN-based LED基础光栅结构实现光的表面等离极化增强

The transmitting light in GaN-based LED with 30 nm thickness metal film grating is investigated. We proposed a basic grating structure model to enhance light intensity in GaN material, which was simpler and cheaper. We calculated and analyzed the structure with different parameters, and studied the numerical simulation results of Ag-films/Al-films/Au-films. With a simple A1 or Ag basic grating structure, the 7.4-7.6 times intensity of 550 nm light can be obtained easily, and the enhancement efficiency is better than others.     

The effect of microstructural and geometrical features on the reliability of ultrafine flip chip microsolder joints

A thermodynamic approach was used to investigate solder alloy systems containing Sn, Ag, Sb, and Pb, during both equilibrium and Scheil cooling conditions. The modeled microstructure was used to explore recent experimental results and to establish the microstructure-property relationships in microsolder joints. This approach is shown to be very useful in the transition from Pb-Sn to lead-free solders by enabling the consideration of contamination by a small amount of Pb. Molten solder interacts with the under bump metallization or print circuit board (PCB) metallization to form intermetallic compounds (IMCs). A truncated sphere structure was used to predict the solder joint geometry, and a two-dimensional finite-element (FE) method was adopted to investigate the kinetics of the dissolution of Au during the reflow process. The dissolution of Au into different volumes of solder material for three sizes of joints has been studied. In the modeling of the dissolution kinetics, the Nernst-Brunner equation is found to have poor validity for these calculations because of the dramatic change in the microscopic geometry and boundary conditions for joints at 100 μm in size or smaller. A combined thermodynamic and kinetic modeling approach, with a novel interface for implementation, is also briefly discussed.     

Optical properties of electrochemically synthesized polypyrrole thin films:the electrolyte effect

Polypyrrole thin films are prepared by the potentiostatic mode of electrodeposition at ＋0.7 V versus a saturated calomel electrode （SCE）. The polypyrrole films are prepared in the presence of different electrolytes such as： p-toluene sulphonic acid （PTS）, oxalic acid and H2SO4. The prepared films are characterized by UV- vis absorption spectroscopy and normal reflectance measurements. The electrochemically synthesized films are semiconductor in nature. The band gap energy ofpolypyrrole thin films is found to be 1.95, 1.92 and 1.79 eV for H2 SO4, oxalic acid and p-toluene sulphonic acid, respectively. The normal reflectance spectroscopy of polypyrrole films shows that the maximum reflectance is in the presence of p-toluene sulphonic acid; this is may be due to a more distinct microstructure than the others. The optical constants such as the extinction coefficient, refractive index, optical conductivity, etc. are calculated and studied with various electrolytes.     

色散效应对GaAs太阳电池双层减反射膜的影响

考虑双层减反射膜材料的折射率色散效应,采用光学干涉矩阵法计算了SiO2/ZnSe和SiO2/ZnS两种GaAs太阳电池双层减反射膜的反射率与波长的函数曲线,以及加权平均反射率随着顶层减反射膜SiO2厚度变化的函数曲线,并与未考虑色散效应的情况进行了对比.计算结果表明,色散效应对双层减反射膜的反射率有较大的影响,特别是对300～500nm波长范围的影响更大,且对不同材料的减反射膜的影响也是不同的.与未考虑色散效应的情况相比,考虑色散效应后,SiO2/ZnSe双层减反射膜的最小加权平均反射率从1.14%增加到1.55%,而SiO2/ZnS双层减反射膜的最小加权平均反射率却从1.49%减小到1.46%.     

Fully Solution‐Processed Photonic Structures from Inorganic/Organic Molecular Hybrid Materials and Commodity Polymers

Managing the interference effects from thin (multi‐)layers allows for the control of the optical transmittance/reflectance of widely used and technologically significant structures such as antireflection coatings (ARCs) and distributed Bragg reflectors (DBRs). These rely on the destructive/constructive interference between incident, reflected, and transmitted radiation. While known for over a century and having been extremely well investigated, the emergence of printable and large‐area electronics brings a new emphasis: the development of materials capable of transferring well‐established ideas to a solution‐based production. Here, demonstrated is the solution‐fabrication of ARCs and DBRs utilizing alternating layers of commodity plastics and recently developed organic/inorganic hybrid materials comprised of poly(vinyl alcohol) (PVAl), cross‐linked with titanium oxide hydrates. Dip‐coated ARCs exhibit an 88% reduction in reflectance across the visible compared to uncoated glass, and fully solution‐coated DBRs provide a reflection of >99% across a 100 nm spectral band in the visible region. Detailed comparisons with transfermatrix methods (TMM) highlight their excellent optical quality including extremely low optical losses. Beneficially, when exposed to elevated temperatures, the hybrid material can display a notable, reproducible, and irreversible change in refractive index and film thickness while maintaining excellent optical performance allowing postdeposition tuning, e.g., for thermo‐responsive applications, including security features and product‐storage environment monitoring.     

CeO_2薄膜负非均匀性的实验抑制及其分析

应用膜系设计软件模拟CeO2的负非均匀性对增透膜光谱特性的影响.研究发现:CeO2薄膜的负非均匀性使多层增透膜的反射率增大,使整个反射光谱曲线朝长波方向漂移,从而导致整个膜系的光谱特性偏离理想情形.为此,向CeO2中掺入3种质量比的TiO2来克服其负非均匀性.实验结果表明:CeO2薄膜的负非均匀性与TiO2的掺入比例、基片温度和真空度有关.在一定温度下,要克服CeO2的负非均匀性,对较低的真空度,倾向于掺杂的TiO2越多越好;对较高的真空度,倾向于掺杂的TiO2越少越好.     

355 nm增透膜的设计、制备与性能

用热舟蒸发法结合修正挡板技术制备了355 nm LaF3/MgF2增透膜,并对部分样品进行了真空退火.采用Lambda 900光谱仪测试了增透膜的低反光谱和透射光谱,并考察了其光谱稳定性;使用脉冲8 ns的355 nm激光测试了增透膜的激光损伤阈值(LIDT);采用Normarski显微镜对增透膜的表面缺陷密度和破斑形貌进行了观察.实验结果表明,制备得到的增透膜的剩余反射率较低,光谱稳定性好;真空退火对增透膜的激光损伤阈值没有改善;增透膜的破环形貌为散点形式,结合破斑深度测试表明薄膜的破坏源于薄膜和基底界面的缺陷点.JGSl熔石英基底由于有好的表面状况、固有的高激光损伤阈值和以其为基底的增透膜具有更低的表面场强,使得其上的增透膜有更高的抗激光损伤能力.     

Reflection of normally incident light from silicon solar cells with pyramidal texture

A surface texture enhances the capacity of a solar cell to absorb incident radiation. In high efficiency and industry standard designs alike, pyramidal surface textures play the key role of reducing the reflectance of the cell surface. This reduction is achieved by ensuring that incident light rays suffer at least a double reflection in the various facets of the structure. In this work, we define a general expression for the reflectance of a pyramidal texture by identifying discrete paths of reflection and the fraction of reflected light that follows each of these paths. We apply the expression to analyse the reflection of normally incident light at textured surfaces. We examine three common morphologies, finding that a regular array of inverted pyramids just outperforms a random array of upright pyramids, with a regular array of upright pyramids showing poorer capacity to reduce front surface reflection. We extend the analysis to determine the transmittance of the various structures, thus permitting the calculation of a figure of merit that can be used to optimise the thickness of antireflection coatings (ARCs). Finally, by examining the angles at which light is reflected by the pyramidal textures, we find that an encapsulant of refractive index greater than 1.59 gives between 79 and 92% of the initially reflected light a second chance to enter the solar cell. Copyright © 2010 John Wiley & Sons, Ltd.     

超快激光制备金属表面微纳米抗反射结构进展

材料表面抗反射性能在太阳能利用、光电子产品、红外传感和成像、军事隐身、以及航空航天等领域均具有重要应用价值。文中对材料表面抗反射特性的重要用途、人工实现路径、表面抗反射结构的研究现状及存在的问题等做了详细的论述。目前,国内外学者已经利用碳纳米管涂层和硅表面针状纳米结构实现了优异的超宽波谱抗反射性能。但迄今为止,金属表面微纳米结构的抗反射能力仍有很大的改善空间。作者所在的清华大学材料学院激光加工研究团队运用新一代高功率高频率超快激光,在金属表面制备出多种类型的特征微纳米结构,对其抗反射性能进行系统研究,实现了紫外-可见、紫外-近红外、紫外-中红外与紫外-远红外分别为2%、6%、5%和8%的超宽光谱超低反射率,并且在0~60入射角度范围内无明显变化。进一步在微纳米结构基础上发展了宏-微纳-纳米线多级多尺度复合结构,在16~17m波长处的总反射率低至0.6%,在14~18m波长处总反射率不超过3%。上述优异超宽光谱抗反射性能预期具有良好应用前景。     

太阳电池减反膜的设计

设计良好的减反膜系,提高太阳电池的光电转换效率是太阳电池研制中的一个重要问题.文章从减反膜理论出发,利用计算机软件模拟分析,获得了单层膜、双层膜系反射率百分比与波长的关系,并给出了具体入射波长(即632.8 nm、800 nm)条件下膜的最佳厚度.采用PC1D软件模拟了覆盖减反膜的单晶硅电池的I-V曲线,证实电池转换效率大大提高.研究结果可应用于太阳电池的设计中.     

Subwavelength nanostructures integrated with polymer‐packaged iii–v solar cells for omnidirectional,broad‐spectrum improvement of photovoltaic performance

Reduction in surface and interface reflectance via the integration of subwavelength nanostructures in flexible polymer packaging material combined with incorporation of dielectric nanoislands into a conventional two‐layer antireflection coating has been demonstrated, analyzed and optimized. Transmittance measurements of moth‐eye textured polymer packaging sheets with different tapered pillar heights fabricated by reactive‐ion etching and nanosphere lithography provide insights into the choice of the optimum nanostructure dimensions. Detailed computational modeling and simulations elucidate the physical nature of the antireflection performance of dielectric nanoisland structures integrated with a commercial two‐layer antireflection coating, and provide guidance for design of the nanoisland structure for optimum antireflection performance. Measurements show that the integration of appropriately designed nanostructures in both polymer packaging material and conventional antireflection layers enables substantial increases in external quantum efficiency (E.Q.E.) and short‐circuit current density (J_sc) over a broad range of incident angles, compared to structures with conventional bilayer antireflection coatings and unpatterned polymer packaging sheets. A 1.1× increase in J_sc, derived directly from E.Q.E. measurements, at normal incidence, increasing to 1.67× improvement at 80° angle of incidence, suggests that such an approach is promising for a variety of photovoltaic applications, particularly those where solar tracking is not feasible or practical. Copyright © 2014 John Wiley & Sons, Ltd.     

Fields in extended cavity lasers

The electromagnetic fields for an extended-cavity laser are described precisely and in detail. The extended-cavity laser consists of a semiconductor laser diode with a partially reflecting coating on one facet and an antireflection coating on the other coupled by radiation through a lensed-fiber, single-mode guide to another partially reflecting coating terminating a narrow-wavelength filter. The formulation is based on the Lorentz reciprocity theorem, the fields are described by angular plane-wave spectra, and the equivalent transmission line representation is used to determine the fields reflected and transmitted by partially reflecting and antireflection coatings. The design of antireflection coatings is considered in detail, and a formula which gives the optimum distance from the diode antireflection coating to an inline lensed fiber is derived