Crystallization from high-temperature solutions in the Na<Subscript>2</Subscript>O-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-P<Subscript>2</Subscript>O<Subscript>5</Subscript>-M<Superscript>VI</Superscript>O<Subscript>3</Subscript> (M = Mo,W) systems

We have studied the crystallization behavior of Na₂O-NaPO₃-M^VIO₃(M^VI = Mo, W) high-temperature solutions containing 15 mol % Bi₂O₃ in the pseudoquaternary systems Na₂O-Bi₂O₃-P₂O₅-M^VIO₃ and have established the conditions for the formation of Na₃Bi(PO₄)₂, high-temperature BiPO₄, NaBi(MoO₄)₂, Bi₂WO₆, and NaMoO₂PO₄. The compounds identified have been characterized by powder x-ray diffraction and IR spectroscopy.     

Phase equilibria in the K<Subscript>2</Subscript>O-MgO-B<Subscript>2</Subscript>O<Subscript>3</Subscript> system

Subsolidus (500–700°C) phase relations in the K₂O-MgO-B₂O₃ system have been studied by X-ray diffraction. The results are used to construct the phase compatibility diagram of the K₂O-MgO-B₂O₃ system in the range 650–700°C. A new ternary compound of composition K₂Mg₃B₂O₇, with the constituent oxides in the molar ratio 1: 3: 1, is identified.     

Electrical conductivity of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Tm<Subscript>2</Subscript>O<Subscript>3</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> solid solutions

New solid solutions, Bi_2?x?y Tm _x Nb _y O_3+δ, with tetragonal and cubic structures have been synthesized in the Bi₂O₃-Tm₂O₃-Nb₂O₅ system, and their electrical conductivity has been measured at temperatures from 670 to 1020 K. The 1020-K conductivity of the tetragonal solid solution Bi_1.8Tm_0.15Nb_0.05O_3+δ is comparable to that of Bi_1.75Tm_0.25O₃, the best conductor in the Bi₂O₃-Tm₂O₃ system.     

Absorption and luminescence of vanadium(IV) in a K<Subscript>2</Subscript>O-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-P<Subscript>2</Subscript>O<Subscript>5</Subscript> glass system

Potassium aluminosilicate phosphate glass with the composition 30% K₂O-20% Al₂O₃-50% P₂O₅ (wt %) activated by tetravalent vanadium ions was synthesized and characterized with respect to physicochemical properties, including room temperature luminescence and absorption spectra. Based on the electronic absorption spectra, it is concluded that the glass contains oxovanadium ions.     

Effect of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> concentration in Bi-containing high-temperature solutions on the luminescence of epitaxial Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> films

Single-crystal gadolinium gallium garnet films have been grown by liquid-phase epitaxy on (111) Gd₃Ga₅O₁₂ substrates from supercooled Bi₂O₃-B₂O₃ fluxed melts at different Gd₂O₃ concentrations. The luminescence spectra of the films have been measured at 10 and 300 K under unmonochromatized synchrotron X-ray excitation and selective UV synchrotron excitation. The Bi³⁺ luminescence is discussed.     

Characterization and electrical properties of semiconducting Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

Semiconducting glasses of the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system were prepared by the press-quenching method and their dc conductivity in the temperature range 223–393 K was measured. The glass transition temperature values (T_g) of the present glasses were larger than those of tellurite glasses. This indicates a higher thermal stability of the glass in the present system. The density for these glasses was consistent with the ionic size, atomic weight and amount of different elements in the glasses. Mössbauer results revealed that the relative fraction of Fe increases with increasing Fe₂O₃ content. Electrical conductivity showed a similar composition dependency as the fraction of Fe. The glasses had conductivities ranging from 10 to 10 Scm at temperatures from 223 to 393 K. Electrical conduction of the glasses was confirmed to be due to non-adiabatic small polaron hopping and the conduction was primarily determined by hopping carrier mobility.     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

Phase composition and microstructure of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> solid solutions prepared by self-propagating high-temperature synthesis

The combustion synthesis, microstructure, chemical composition, and phase composition of cast Al₂O₃-Cr₂O₃ materials are described. The synthesized solid solutions are based on corundum or chromia, depending on the Al₂O₃ and Cr₂O₃ contents. Using self-propagating high-temperature synthesis, a cast aluminum oxynitride is obtained for the first time.     

Microstructure and high-temperature strength of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Er<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>/ZrO<Subscript>2</Subscript> ternary melt growth composite

A new Al₂O₃/Er₃Al₅O₁₂(EAG)/ZrO₂ ternary MGC (Melt Growth Composite) with a novel microstructure has been fabricated by unidirectional solidification. This ternary MGC has a microstructure consisting of continuous networks of single-crystal Al₂O₃, single-crystal EAG and fine cubic-ZrO₂ phases without grain boundaries. The ternary MGC has also characteristic dimensions of the microstructure of around 2–4 m for EAG phases, around 2–4 m for Al₂O₃ phases reinforced with around 0.4–0.8 m cubic-ZrO₂ phases. No amorphous phases are formed at interfaces between phases in the ternary MGC. The ternary MGCs flexural strength at 1873 K is approximately 700 MPa, more than twice the 330 MPa of the Al₂O₃/EAG binary MGC. The fracture manner of the Al₂O₃/EAG/ZrO₂ ternary MGC at 1873 K shows the same intergranular fracture as the Al₂O₃/EAG binary MGC, but is significantly different from the transgranular fracture of the sintered ceramic.     

Formation of solid solutions in the TiO<Subscript>2</Subscript>-Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> system

The phase formation and reaction kinetics in the TiO₂-Cr₂O₃ system have been studied by x-ray diffraction and electron microscopy. The Cr₂O₃ solubility in TiO₂ has been accurately determined, and the rate parameters of the formation of solid solutions in this system have been evaluated. The results demonstrate that Cr₂O₃ dissolves in rutile and not in anatase. Cr₂O₃ markedly reduces the temperature of the anatase-rutile phase transition.     

Reactions of V<Subscript>2</Subscript>O<Subscript>5</Subscript>, Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>, and Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> with AlN

Reactions of vanadium, niobium, and tantalum pentoxides with aluminum nitride have been studied using X-ray diffraction. At temperatures from 1000 to 1600°C, we have identified various V, Nb, and Ta nitrides. The composition of the niobium and tantalum nitrides depends on the reaction temperature. The tendency toward nitride formation becomes stronger in the order V₂O₅ < Ta₂O₅ < Nb₂O₅.     

Calcium bismuth borates in the CaO-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript> system

The 600°C (subsolidus) section of the CaO-Bi₂O₃-B₂O₃ phase diagram has been studied by x-ray diffraction and differential thermal analysis. A new calcium bismuth borate of composition CaBi₂B₄O₁₀ has been identified, and the existence of CaBi₂B₂O₇ has been confirmed. According to T-x phase diagram data, these compounds form peritectically at 700±5 and 783±5°C, respectively.     

Glass formation in the Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript>-BaO system

The physicochemical properties of BaO-Bi₂O₃-B₂O₃ glasses have been studied. The effect of KBF₄ additions on the properties of the glasses has been examined. The transmission of the glasses has been correlated with their local structure and composition.     

Solid-state reactions in the system Li<Subscript>2</Subscript>CO<Subscript>3</Subscript>-Na<Subscript>2</Subscript>CO<Subscript>3</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript>

The formation mechanisms of Li _x Na_{1 ?x} Ta _y Nb_{1 ? y} O₃ perovskite solid solutions in the Li₂CO₃-Na₂CO₃-Nb₂O₅-Ta₂O₅ system have been studied by x-ray diffraction, differential thermal analysis, thermogravimetry, IR spectroscopy, and mass spectrometry at temperatures from 300 to 1100°C. The results indicate that the synthesis of Li _x Na_{1 ? x} Ta _y Nb_{1 ? y} O₃ solid solutions involves a complex sequence of consecutive and parallel solid-state reactions. An optimized synthesis procedure for Li _x Na_{1 ? x} Ta _y Nb_{1 ? y} O₃ solid solutions is proposed.     

Subsolidus phase relations in the system Tm<Subscript>2</Subscript>O<Subscript>3</Subscript>-Rh<Subscript>2</Subscript>O<Subscript>3</Subscript>

The Tm₂O₃-Rh₂O₃ system has been studied by x-ray diffraction, thermal analysis, and chemical analysis of annealed and quenched samples. The results have been used to construct a schematic subsolidus phase diagram of the system. Only one double oxide, TmRhO₃, has been identified. Some of its physicochemical properties are reported.     

Extruded thermoelectric materials based on Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> solid solutions

Extruded n-type materials based on Bi₂Te₃-Bi₂Se₃ alloys containing 6 to 40 mol % Bi₂Se₃ have been investigated using microstructural analysis and thermoelectric measurements at room temperature and in the range 100–400 K. Their electrical properties have been compared to those of single-crystal analogs. Compositions have been found at which the extruded materials offer the highest thermoelectric performance in different temperature ranges.     

Thermal conductivity of Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Gd<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> solid solutions

We have measured the thermal conductivity of Bi₂Te₃-Sb₂Te₃-Gd₂Te₃ solid solutions at temperatures from ～80 to 300 K and have determined the electronic and lattice components of their total thermal conductivity and the contributions of Sb₂Te₃ and Gd₂Te₃ to their thermal resistance. The results indicate that heat in these materials is transported largely by phonons and that three-phonon processes play a key role in determining the lattice thermal conductivity of the solid solutions.     

Electrical properties of perovskite-like compounds in the Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript> system

The electrical properties of layered perovskite-like compounds with the general formula Bi _{m + 1}Fe _{m − 3}Ti₃O_{3m + 3} have been studied in relation to their physicochemical properties and structure.     

Phase equilibria in the Ag<Subscript>2</Subscript>Se-As<Subscript>2</Subscript>Se<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> system

We have studied phase equilibria in the pseudoternary system Ag₂Se-As₂Se₃-Bi₂Se₃ and constructed the 300-, 600-, and 800-K isothermal sections, a number of partial phase diagrams, and the liquidus projection of this system. The AgAsSe₂-AgBiSe₂ and As₂Se₃-AgBiSe₂ joins are shown to be pseudobinary, and the Ag₃AsSe₃-AgBiSe₂ and AgAs₃Se₅-AgAsSe₂ joins are pseudobinary below the liquidus. Several in- and univariant peritectic, eutectic, and eutectoid equilibria and a broad region of AgBiSe₂-based solid solutions are identified. The homogeneity region of the AgBiSe₂-based phase has the largest extent along the AgAsSe₂-AgBiSe₂ join: 40 mol % (650 K) for the high-temperature form of AgBiSe₂ and 20 mol % (300 K) for its low-temperature form.     

Phase equilibria in the La<Subscript>2</Subscript>O<Subscript>3</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>-Nb system and thermal stability of LaNb<Subscript>7</Subscript>O<Subscript>12</Subscript>

The phase equilibria in the ternary system La₂O₃-Nb₂O₅-Nb have been studied at subsolidus temperatures in vacuum (6.65 × 10^?3 Pa), and the temperature stability limits of LaNb₇O₁₂ have been determined in vacuum and during heating in air.