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本设计由三个模块电路构成:前级放大电路(带AGC部分)、后级放大电路和单片机显示与控制模块。在前级放大电路中,用宽带运算放大器AD603两级级联放大输入信号,输出放大一定倍数的电压,经过后级放大电路达到大于8V的有效值输出。ADUC812的单片机显示、控制和数据处理模块除可以程控调节放大器的增益外,还可以实时显示输出电压有效值。 相似文献
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本电路特性测试仪以单片机STM32F103ZET6为核心,来测量特定放大器电路的特性,包括输入输出电阻,放大倍数和增益,进而判断该放大器由于元器件变化而引起故障或变化的原因。本系统主要由模拟电路组成,由单片机作为控制核心,结合继电器实现换路测试。根据放大电路的等效定理,在放大器的输入输出电路中串入电阻并结合分压原理可测得输入输出电阻。放大倍数的测量则根据输出电压与输入电压的关系实现。本文设计的电路特性测试仪测量电阻与增益时相对误差均不超过10%,且可实时绘制幅频特性曲线并显示截止频率。 相似文献
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在智能微波开关信号解调电路中采用了三级程控放大电路,各级放大电路的增益由多路SPI数字电位器MCP4351控制。测量电路对灵敏度调节电位器输出电压进行测量,在保证各级输出不失真的情况下,根据约束条件分配测量结果所对应的总增益,并形成增益分配表。其中,第二、三级增益按照线性法分配,第一级增益按照约束方程计算得出。解调时,系统控制核心MSP430F149查增益分配表得到数字电位器的调整值,并按照调整值调节电位器的阻值,实现增益的自动控制。该方法不需要单片机进行大量复杂的增益计算过程,节省运行时间和程序存储空间。 相似文献
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设计一种数字控制的高增益宽带宽放大器,提出了采用多个放大器直接耦合级联方式,通过理论分析合理选择各级增益的分配,明显改善了放大器的低频特性,极大地提高了增益范围。系统由前置放大电路、程控增益放大电路、通频带选择电路、功率放大电路、单片机控制电路以及电源模块6个部分组成。其中通频带选择电路由两路巴特沃斯低通滤波器组成,可实现通频带的切换;功率放大电路由多个高速缓冲芯片BUF634并联组成,扩大了电流输出范围,实现了功率放大;单片机控制电路以MSP430G2553为主控芯片,使用液晶12864实现显示功能,人机界面友好。经测试,本系统能够完成0~10MHz频率范围内的0~80dB增益步进可调功能。在增益为60dB时,输出电压噪声峰峰值小于0.3V,很好的完成了系统的设计指标。 相似文献
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设计了一种应用于超宽带系统中的可变增益宽带低噪声放大器。电路中采用了二阶巴特沃斯滤波器作为输入和输出匹配电路;采用了两级共源共栅结构实现电路的放大,并通过控制第二级的电流,实现了在宽频带范围内增益连续可调;采用了多栅管(MGTR),提高了电路的线性度;设计基于SMIC 0.18μm CMOS工艺。仿真结果显示,在频带3~5 GHz的范围内最高增益17 dB,增益波动小于1.8 dB,输入和输出端口反射系数分别小于-10 dB和-14 dB,噪声系数nf小于3.5 dB,当控制电压Vctrl=1.4 V时,IIP3约为2 dBm,电路功耗为16 mW。 相似文献
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Scuderi A. La Paglia L. Carrara F. Palmisano G. 《Solid-State Circuits, IEEE Journal of》2005,40(3):611-621
This paper presents the design and measured performance of a 1.8-GHz power amplifier featuring load mismatch protection and soft-slope power control. Load-mismatch-induced breakdown can be avoided by attenuating the RF power to the final stage during overvoltage conditions. This was accomplished by means of a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. The issue of output power control has been addressed as well. To this end, a temperature-compensated bias network is proposed, which allows a moderate power control slope (dB/V) to be achieved by varying the circuit quiescent current according to an exponential law. The nonlinear power amplifier was fabricated using a low-cost silicon bipolar process with a 6.4-V breakdown voltage. It delivers a 33.5-dBm saturated output power with 46% maximum power-added efficiency and 36-dB gain at a nominal 3.5-V supply voltage. The device is able to tolerate a 10:1 load standing-wave ratio up to a 5.1-V supply voltage. Power control slope is lower than 80 dB/V between -15 dBm and the saturated output power level. 相似文献
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基于结型场效应晶体管(JFET)和双极型晶体管(BJT)兼容工艺,设计了一种低失调高压大电流集成运算放大器。电路输入级采用p沟道JFET (p-JFET)差分对共源共栅结构;中间级以BJT作为放大管,采用复合有源负载结构;输出级采用复合npn达林顿管阵列,与常规推挽输出结构相比,在输出相同电流的情况下,节省了大量芯片面积。基于Cadence Spectre软件对该运算放大器电路进行了仿真分析和优化设计,在±35 V电源供电下,最小负载电阻为6Ω时的电压增益为95 dB,输入失调电压为0.224 5 mV,输入偏置电流为31.34 pA,输入失调电流为3.3 pA,单位增益带宽为9.6 MHz,具有输出9 A峰值大电流能力。 相似文献
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基于IHP锗硅BiCMOS工艺,研究和实现了两种220 GHz低噪声放大器电路,并将其应用于220 GHz太赫兹无线高速通信收发机电路。一种是220 GHz四级单端共基极低噪声放大电路,每级电路采用了共基极(Common Base, CB)电路结构,利用传输线和金属-绝缘体-金属(Metal-Insulator-Metal, MIM)电容等无源电路元器件构成输入、输出和级间匹配网络。该低噪放电源的电压为1.8 V,功耗为25 mW,在220 GHz频点处实现了16 dB的增益,3 dB带宽达到了27 GHz。另一种是220 GHz四级共射共基差分低噪声放大电路,每级都采用共射共基的电路结构,放大器利用微带传输线和MIM电容构成每级的负载、Marchand-Balun、输入、输出和级间匹配网络等。该低噪放电源的电压为3 V,功耗为234 mW,在224 GHz频点实现了22 dB的增益,3 dB带宽超过6 GHz。这两个低噪声放大器可应用于220 GHz太赫兹无线高速通信收发机电路。 相似文献
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Griffith R. Vyne R.L. Dotson R.N. Petty T. 《Solid-State Circuits, IEEE Journal of》1997,32(12):2012-2022
A BiCMOS rail-to-rail operational amplifier capable of operating from supply voltages as low as 1 V is presented. The folded cascode input stage uses an nMOS depletion mode differential pair to provide rail-to-rail common mode voltage range while typically requiring only 40 fA of input bias current. The bipolar transistor differential-to-single-ended conversion network employs a low-voltage base current cancellation technique which provides high input stage voltage gain from a l-V supply yet allows a 3-V/μs slew rate capability. The bipolar transistor output stage uses a low-voltage translinear loop which maintains a low impedance signal path to the output common emitter power devices. This circuit topology enables the amplifier to achieve a 4-MHz bandwidth with 60° of phase margin. The output voltage can swing to within 50 mV of each supply rail. An “on-demand” base current boost technique will be presented which can provide up to 50 mA of output drive capability from a 5-V supply, yet consumes only a few microamps when the output is in the quiescent state. A low voltage level shift technique will be described which uses an n-channel depletion mode source follower to provide isolation between the input and output stages 相似文献
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A high-performance current amplifier is proposed which is based on a folded-cascode transresistance amplifier and a low-distortion class AB current output stage. The loop gain of the transresistance amplifier exhibits a gain bandwidth product of 10 MHz and a DC gain as high as 100 dB which allows accurate closed-loop operations to be achieved. Despite the intrinsic low-linearity performance of current amplifiers with respect to their voltage amplifier counterpart, the proposed circuit provides an output current of 7 mA with a total harmonic distortion (THD) better than -55 dB while requiring only 200 μA of quiescent current for the output transistors. The circuit was fabricated in a 1.2 μm CMOS process, uses a 5 V power supply, and dissipates 4 mW 相似文献
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酒精气体浓度探测仪采用MQ-3乙醇气体传感器对空气中的酒精浓度进行检测,利用单片机把检测到的酒精浓度模拟量电压信号转换成数字量,再和预设的酒精浓度阀值进行比较,如果超过阀值由单片机控制三极管驱动蜂鸣器报警,液晶屏显示报警时的酒精浓度;本电路可以由键盘预先设定、调整阀值;本电路能判断吹气是否有效;电路全部采用Protel Dxp 2004制版软件设计;印刷电路板采用双面板设计、双面覆铜方案。 相似文献
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针对使用标准CMOS技术实现的传统电荷泵输出电压较低的不足,文中提出将基本的电荷转移开关进行改进的MOS电荷泵,在泵送增益增加电路的基础上,通过在泵的输出级增加第3个控制信号来提高电荷泵的电压增益,以得到更高的输出电压,将其作为无线传感器的能量收集电路。仿真结果表明,该改进型电荷泵电路适合于低电压设备,并具有较高的泵送增益。其输出电压在同类电荷泵中最高,在1.5 V电源条件下,可高达8.5 V。 相似文献