聚丙烯高频功率电容器

介绍了用聚丙烯材料生产的高频功率电容器特性和生产工艺，并通过与云母电容器技术数据对比证实，用聚丙烯材料生产的高频电容器可部分替代云母电容器，讨论了聚丙烯高频功率电容器的设计及目前所达到的技术水平。     

开关电源用铝电解电容器的失效机理探讨

研究彩色电视机早返机开关电源用铝电解电容器失效现象及其失效机理，并针对开关电源如何选用铝电解电容器，提出了增加电容器ＣＶ积、增强耐纹波能力等建议措施，以减少铝电解电容器在产品中的早期失效。     

脉冲用金属化膜电容器稳态热分析研究

在连续工作过程中，由于温度过高会影响金属化膜电容器的稳定性和安全性，有必要对其稳态进行热分析。通过有限元分析法和试验验证研究了一种脉冲用金属化膜电容器的稳态温度分布情况。分析了电容器内部热传导的过程，计算了电容器热传导载荷和散热边界条件，建立了电容器有限元仿真模型，对其施加热载荷情况下计算了内部温度分布情况，通过试验验证了仿真模型的正确性。并进一步分析了芯子卷绕参数和电容器工作周期对电容器内部温度分布的影响。结果显示：通过稳态热分析可以对电容器性能进行前置评估，对电容器优化设计有一定指导作用。     

CCF型片式塑封交流瓷介电容器

用多层陶瓷电容器(MLCC)制作交流瓷介电容器相对困难，我们希望用制成圆片瓷介电容器的单层被银瓷片制成片式交流瓷介电容器以满足市场需要。开发了将陶瓷芯片夹在上下两连体扁平引线中间并焊接，再用模塑环氧树脂封装，然后分割并切开连体引线，将切开后的扁平引线平贴在外壳表面，得到仍是用单层被银瓷片制成的片式塑封交流瓷介电容器，该产品比MLCC交流瓷介电容器的制造更容易，可靠性更高，且适用于表面贴装。     

金属化膜脉冲电容器组的性能可靠性

基于金属化膜电容器的特点，提出了金属化膜电容器组的性能可靠性，并分两种情况讨论了性能可靠性的估计方法。金属化膜脉冲电容器组性能可靠性的提出，有效地解决了电容器组在使用过程中可靠性的评价问题。可以为电容器组寿命预计、维修提供依据。     

钽电解电容器的失效及对策

介绍了钽电解电容器的常见失效模式，结合我厂军品电源模块使用的CAK45钽电解电容器，进行了失效率估算，并对钽电解电容器使用中常见的失效模式提出了具体的预防对策，最后对钽电解电容器的加速寿命试验结果进行了分析。     

铝电解电容器的基本概念与应用（2）

介绍电容的物理意义及电容器的构造，分类，特性参数，电气功能；综述液态铝电解电容器的结构性能特点及其面临的机遇和挑战，回顾铝电解电容器的发展历程，并展望其发展趋势，小型片式化的固态铝电解电容器具有优异的电气特性，必将是未来产品和应用的主角。     

铝电解电容器的基本概念与应用（1）

介绍电容的物理意义及电容器的构造，分类，特性参数，电气功能，综述液态铝电解电容器的结构性能特点及其面临的机遇和挑战，回顾铝电解电容器的发展历程，并展望其发展趋势。小型片式化的固态铝电解电容器具有优异的电气特性，必将是未来产品和应用的主角。     

高精度,高速测试系统中电容器的选用原则

本文在详细分析电容器基本特性和主要参数的基础上，针对高精度、高速测试系统的特点，给出了选用电容器的基本原则，并介绍了电容器应用中的一些注意事项，对其它电子系统也有普遍实用价值。     

云母电容器的进展

根据近几年搜集的资料，综述了国内外云母电容器进展情况，并结合云母电容器的特点及国情，进行了分析，提出了见解。     

Capacitor loss analysis method for power electronics converters

A capacitor is a major component that contributes to reducing the reliability of high-power density power electronics converters. The lifetime and reliability of capacitors are strongly influenced by temperature. An accurate loss measurement method is necessary to estimate temperature rise. However, practical capacitor loss measurement systems used in power electronics converters have not yet been developed because capacitor loss data provided by the manufacturer is usually measured under sinusoidal excitation, which is different from actual excitations of electronics converters. In this study, a capacitor loss measurement system for power electronics converters is proposed. The proposed measurement system can be used for fast capacitor loss measurement with high accuracy in a real circuit and capacitor loss analysis for each switching period of power electronics converters. To verify the accuracy of the loss measurement, the measured loss value of a filter capacitor used in a pulse width modulated inverter is compared with the calculated value. The experimental results show good agreement with the calculated capacitor loss.     

CT47型脉冲功率高压陶瓷电容器性能

基于材料和工艺特点,对新研锆钛酸钡基CT47型脉冲功率电容器的高压脉冲放电性能和贮存性能进行了分析,并根据脉冲功率应用场景设计了系列化性能研究实验。实验结果表明,该电容器温度特性良好,高压脉冲放电性能稳定,耐压值高,绝缘性能好,为该电容器在脉冲功率领域的应用奠定了良好的基础。     

无电解电容的现代电源技术

文章先给出现代电源的定义,论证了电源电路中无电解电容技术的必要性和可能的发展方向,给出了电源电路无电解电容技术的一般方法,最后给出了在高温环境下电解电容与寿命的关系作为背景资料。     

采用金属耦合电容实现级间匹配的射频功率放大器

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available,especially no high density capacitor.To address this problem,a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process.This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal（MIM） capacitor regarding their capacitor density.Detailed simulations are carried out for the leakage,the voltage dependency,the temperature dependency,and the quality factor between an inter-metal shuffled（IMS） capacitor and an MIM capacitor.Finally,an IMS capacitor is chosen to perform the inter-stage matching.The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application.The PA occupies 370 × 200 μm^2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.     

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a twostage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching.The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 X 200 μm2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.     

超级电容器应用介绍

通过对超级电容器的基本原理、特点和主要性能指标的介绍,分析了超级电容器的工作原理和超级电容器模组的设计原理,通过实例阐述了超级电容器在高功率脉冲和瞬时功率保持两方面的应用。     

基于无线传感网络的电力电缆接头在线监测系统

针对现有的电力电缆接头温度在线监测系统存在的问题和缺陷,研制出一套新型的监测系统。该监测装置以ATmega16单片机和UTC1212无线透传模块为核心,对电缆接头温度数据采集和监测,利用GPRS网络来实现远程数据的传输。终端采用感应取能供电,利用超级电容的大容量储能和快速充放电特性,经储能超级电容和放电超级电容输出给监测系统供电。     

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

DC-link capacitors are a major factor of degrading reliability of power electric converters because they usually have a shorter lifetime and higher failure rate than those of semiconductor devices or magnetic devices. Characteristics of the capacitors are usually evaluated by a single sinusoidal current waveform. However, actual current flowing out of the converter into the capacitor is a modulated square current waveform. This paper provides experimental comparison of the power loss dissipated in an aluminum electrolytic capacitor between sinusoidal and square-wave current injections. Power loss is estimated by temperature rise of the capacitor. Experimental results confirm that power losses of the square-wave current injection were always lower than those of the sinusoidal current injection by 10–20%. Moreover, the power losses of the square-wave current injection can be estimated by a synthesis of fundamental and harmonic currents based on the Fourier series expansion, which brings a high accuracy less than 1% when more than fifth harmonic current is introduced. This comparison will be useful for estimating power loss and life time of electrolytic capacitors.     

高频低阻抗铝电解电容器的研究

分析了高频低阻抗铝电解电容器系列产品的发展状况，讨论了实现高频低阻抗的有关技术、工艺，按开关电源的要求开发了宽温、高电导率、高稳定的工作电解液，成功地研制了ＣＤ２８６型铝电解电容器，该产品通过了＋１０５℃、２０００ｈ的耐久性试验。     

A stable programming pulse generator for single power supply flashmemories

A stable programming pulse generator has been developed for single power supply, high-speed programming, and low-power flash memories. The newly developed delay circuit operates by amplifying the difference between the reference voltage and the capacitor voltage raised by the charging current which is proportional to the reference voltage. Linearity between the capacitor voltage swing and the driving current enables us to make the delay circuit supply voltage-, temperature-, and process-tolerant. Thus, the proposed delay circuit stably controls a programming pulse width through all operational ranges of supply voltage and temperature. The output frequency of the newly developed oscillator is inversely proportional to the supply voltage. This oscillator stably drives charge pump circuits which generate high programming voltages on chip since dependence of charge pump characteristics on frequency and supply voltage can be cancelled. As a result, the programming pulse generator including the delay circuit and the oscillator has reduced the total programming time under the slowest condition, i.e., high temperature and low voltage condition, by 30% and the power consumption under the fastest condition, i.e., low temperature and high voltage condition, by 20%, for a 3.3 V-only flash memory