BF2+注入多晶硅栅的SIMS分析

文本采用SIMS技术,分析了BF₂⁺注入多晶硅栅退火前后F原子在多晶硅和SiO₂中的迁移特性。结果表明,80keV,2×10¹⁵和5×10¹⁵cm^-2 BF₂⁺注入多晶硅栅经过900℃,30min退火后,部分F原子已扩散到SiO₂中。F在多晶硅和SiO₂中的迁移行为呈现不规则的特性,这归因于损伤缺陷和键缺陷对F原子的富集作用。     

BF+2注入的多晶硅薄膜快速热退火后氟行为的研究

本文报道BF_2~+注入的多晶硅薄膜经快速热退火后的物理和电学性质。发现造成氟异常分布的原因是由于快速热退火过程中氟的外扩散以及在多晶硅/二氧化硅界面处的聚集。在注入剂量为1×10~(15)和5×10~(15)cm~(-2)的样品中,经快速热退火后可以观察到氟泡。     

BF2^＋注入多晶硅栅的SIMS分析

文本采用ＳＩＭＳ技术，分析了ＢＦ２＾＋注入多晶硅栅退火前后Ｆ原子在多晶硅和ＳｉＯ２中的迁移特性，结果表明，８０ｋｅＶ，２×１０＾１５和５×１０＾１５ｃｍ＾－２ＢＦ２＾＋注入多晶硅栅经过９００℃，ｍｉｎ退火后，部分Ｆ原子已扩散到ＳｉＯ２中，Ｆ在多晶硅和ＳｉＯ２中的迁移行为呈现不规则的特性，这归因于损伤缺陷和键缺陷对Ｆ原子的富集作用。     

BF_2~+注入硅的特性与分析

用BF_2~+分子离子注入n型硅,由于B的有效注入能量减少,可以得到B的浅注入分布,B分布的沟道效应也明显降低。BF_2~+注入硅能形成非晶层,在低温(550℃)退火时,注入层以固相外延形式再结晶,B原子的激活率可高达85％。次级离子质谱(SIMS)测量表明,退火期间,F的迁移行为与注入靶温、注入剂量和退火温度有密切的关系。再结晶过程中F的外扩散以及残留缺陷对F的捕获,是引起F不规则迁移的主要原因。快速退火的应用,使B的再分布减少,注入损伤消除,同时可获得较低的方块电阻值。BF_2~+注入结合快速退火制作的P~+N二极管具有低的反向漏电流(～1fA/μm~2—10V)和较高的反向击穿电压。     

BF_2~+注入单晶硅和多晶硅栅快速热退火氟迁移特性的SIMS分析

本文借助ＳＩＭＳ技术，系统地分析了４５ｋｅＶ，１×１０１４、２×１０１５和５×１０１５ｃｍ－２ＢＦ＋２注入单晶硅和８０ｋｅＶ、２×１０１５ｃｍ－２ＢＦ＋２注入多晶硅栅在快速退火条件下，Ｆ在单晶硅和多晶硅栅中的分布剖面，并对Ｆ在单晶硅和多晶硅栅中的迁移特性进行了深入的分析和讨论．Ｆ在多晶硅栅中的迁移，不但存在着Ｆ的扩散，而且还存在着Ｆ的发射和吸收，据此成功地解释了实验结果．     

硅中离子注入层的红外瞬态退火及其浅结的制备

本文研究了硅中离子注入层的红外瞬态退火.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.对于注入剂量为1×10~(15)As~+cm~(-2)的样品和3.6×10~(14)B~+cm~(-2)的样品,经红外瞬态退火后电激活率分别达到了90%和95%.用红外瞬态退火样品制作的台面管的反向漏电流,在相同的测试条件下,只是常规热退火样品的一半左右.对于通过650(?)SiO_2膜,25keV、5×10~(14)cm~(-2)剂量的硼离子注入样品,经红外瞬态退火后得到了结深分0.20μm的浅结.     

多晶硅栅的BCl离子注入技术

在CMOS中,有n—MOS和P—MOS两种晶体管。为了简化制造工艺,在制作多晶硅栅时,最好先都制成n~+多晶硅,然后再对P—MOS管栅的n~+多晶硅注入B~+,使其变成p~+型多晶硅。可是,随着集成度的提高,最小线宽越变越窄,也要求多晶硅膜更薄,即使用很低能量的B~+来注入,B~+也会穿透多晶硅层进入基片中。为避免穿透,已发展了采用BF_2~+注入来形成P~+型多晶硅栅的办法。它确实能有效地降低B的注入深度,但也带来了另外的问题,这就是BF_2~+注入多晶硅中的F元素,在氧化膜中扩散,在随后的热处理中,会使氧化膜中B加速扩散到基片中,引起V_(TH)的变化,而成为一个麻烦问题。     

FLUORINE BEHAVIOR IN BF_2~+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

The physical and electrical properties of BF_2~+ implanted polysilicon films subjectedto rapid thermal annealing(RTA)are presented.It is found that the out diffusion of F and itssegregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalousmigration.Fluorine bubbles were observed in BF_2~+ implanted samples at doses of 1×10~(15) and5×10~(15)cm~(-2) after RTA.     

硅中离子注入层退火后残留深能级缺陷的DLTS研究

本文将DLTS测试技术用于低剂量B~+注入MOS结构,并给出了计算方法.对通过920(?)SiO_2膜、注入剂量为5×10~(11)B~+ cm~(-2),经480℃、15分钟热处理的样品测到了E_T-E_V=0.19eV,E_T-E_V=0.26eV和E_T-E_V=0.33eV三个深能级;对于1×10~(12)B~+ cm~(-2)注入,经常规热退火(950℃、30分钟)和红外瞬态退火(辐照源温1150℃,40秒)后分别测到了深能级E_T-E_V=0.24eV和E_T-E_V=0.29eV;对引入这些深能级的残留缺陷进行了讨论.     

BF_2~+注入硅分子效应的椭偏谱多层分析

把离子注入层设想成由50多层的微分薄层构成,用以研究BF_2~+的分子效应。我们在1.6—5.0eV光子能量范围内,测量了不同剂量也(3×10~(13)-5×10~(15)ion/cm~2),147keV BF_2~+分子离子77K注入硅以及相应的B~+、F~+注入硅样品的椭偏谱。由实验测得的离子注入样品的椭偏光谱、多层薄膜光学模型、有效介质近似理论(EMA)和计算软件,可分析离子注入硅的损伤分布、表面自然氧化物的非均匀性和界面组份。其分析结果与背散射沟道技术和透射电子显微镜的测定结果相一致。研究中发现,低温BF~2~+注入的损伤层和非晶层都首先在样品表面形成,与B~+、F~+注入损伤相比,BF_2~+注入存在显著的分子效应。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first