光激射器操作安全规则

保炉光激射器操作者的一些建议：1.不论戴有保护镜与否,都不要直接规看激射光束或者它的反光。如果光激射器没有完全封闭或屛蔽,则当它工作时,应当背向它。……     

关于X射线激光器的建议

用激光器来产生相干的χ射线,这并非完全不可能实现的幻想,至少对于软X射线是这样。事实上,最近在紫外激光器方面的成功,使人们可以期望在不久的将来获得的 波长将会显著缩短。     

激光器用气体在装配与使用中的安全操作

本文陈述现行激光器用气体在激光器制造与使用过程中有关安全的标准要求,并规定了一些达到此标准所需设备的要求准则。表1摘要列举了用于激光器的气体对人体的危害及性质。表2说明气体的分类方法。激光器用气体的危害危害最大的气体是氟和氯化氢。氟有很强的毒性和腐蚀性,能够引起肺气肿和严重的化学热灼伤,在处理这种气体时要非常谨慎。氯化氢带有浓烟,腐蚀性很强,吸入氯化氢后能引     

横向脉冲化学激光器:大气压下操作的HF激光器

在C_3H_8-He-SF_6混合物中,通过多重横向火花放电产生振动-转动跃迁的HF,在大气压下获得化学激光运转。用C_4F_8、C_2F_6或CF_4代替SF_6,用H_2、CH_4、C_2H_6或C_4H_(10)代替C_3H_8也获得了激光作用,在低压下获得的最大脉冲峰值功率超过0.5兆瓦。在大气压下,其峰值功率是30千瓦数量级。在某些情况下,压力达到1大气压,激光是超辐射。研究了HF的v=3,2,1的振动能级的P-支跃迁。泵浦反应是F RH=HF~ R。     

电池操作的Nd:YAG激光器

Spektron Optik有限公司研制的一种用电池工作的Nd:YAG激光器,其技术特性:在10赫芝最大频率下,平均功率至少为一瓦,用Q开关操作时,脉冲持续时间为10毫微秒,具有功率5～20兆瓦,不需用水冷却。可用倍频操作,YAG晶体工作寿命长。     

人眼安全激光器综述

综述了人眼安全激光器及其测距应用的概况，作者认为：用非线性晶体（如ＫＴＰ等）代替高压喇曼盒频移Ｎｄ：ＹＡＧ技术，用１μｍ波段ＬＤ代替闪光灯泵浦铒玻璃技术也许得到１．５４μｍ安全激光的更有效途径，宜将成熟的数字信息技术引入近红外ＬＤ测距机，发展新一类人眼安全激光系统。     

关于X激光器

人类认识电磁场的相干辐射已经经历了二次大的飞跃——微波受激发射及激光，目前正在向第三次飞跃——X激光过渡，它比光频区的激光波长又将缩短三个量级左右(波长为100~1埃左右），目前已有种种迹象预报着第三次飞跃的来临，可以预料，既然激光的出现已经给人们认识和改造世界提供了强有力的工具，那么X激光的出现亦将带来更为广阔的应用。     

人眼安全DPSS激光器

Kigre公司将推出下一代用于监视和探测的兆瓦级微型激光器。发射波长在1．5μm，第1代2个激光器指的是MK-88—10Hz型和MK-81-1Hz型。据该公司报道，这些高效率端泵DPSS激光器的性能得到有效提高，是由于改善了高增益激光玻璃材料的热转换和导热冷却封装，这些措施以最小的热量条件要求，在更高的能量水平增加了激光器的寿命。     

用激光器引发裂变的建议

在过去两年中,人们对用激光器压缩小丸,引起对热核聚变反应的兴趣不断增加。现在,有两篇论文（分别由苏联列别捷夫研究所和美国内华达大学提出）建议用激光器压缩铀丸,引起裂变。这种方法可用来构成小型裂变反应堆,据作者说,它是一种强中子源,一种粒子加速器,或一种非常强的磁场。     

关于超导体激光器的考虑

美帝乔治城（Georgetown)大学的利奥波德（L. Leopold)和格雷戈里（W. D. Gregory)考虑了在超导体的正常态和超导态之间发射远红外激光的可能性。他们将提出有关由半导体-超导体结构成的固态激光器的设计。根据已有的实验数据,即将讨论使这种系统发生激光作用的问题。     

Simple design rules for single-lobe operation of (evanescentlycoupled) index-guided phase-locked arrays of diode lasers

The author presents both a simple yet very accurate Gaussian beamwaist approximation for the fundamental mode of the symmetric slab waveguide as well as simple design criteria for virtual, sing-lobe operation of phase-locked arrays of diode lasers. Closed-form analytic expressions, involving all parameters characteristic of index-guided, uniform arrays, are determined for the condition that at least 80% of the emitted energy is contained in the main lobe when all emitters are in phase. The effects of the various array parameters on the single-lobe condition are discussed     

关于郊区网络结构调整的建议

北京郊区电话网目前容量为190万门,用户实装将近1 45万户,目前有交换系统40个,制式有S1 240、EWSD、CC08、E10B四种,其中S1240交换机10个系统、EWSD交换机26个系统、CC08交换机3个系统,E10B交换机1个系统,另外还有一些华为公司和中兴公司生产的接入网设备.     

Q-switched operation of quasi-three-level lasers

A theoretical model for longitudinally pumped quasi-three-level lasers under Q-switched, repetitively Q-switched, and cw operating conditions is developed. The model is applied using 8% Ho:YAG as the gain medium, and it is found that for typical conditions the effective energy storage time can be much less than the upper state lifetime, in agreement with experiment but not predicted by earlier theories. This effect is attributed to details of laser design and pumping conditions, as opposed to being an intrinsic property of the gain material     

关于电力调度自动化网络安全运行探究

通过应用电力调动自动化系统,电力公司获得更大的经济效益,但在从经验型调度转变成分析型调度的过程中,网络安全隐患问题日益突出,一旦电力公司受到网络安全侵袭,将直接减少经济利益,必须引起重视.接下来就从电力调度自动化网络安全运行影响因素着手,探究网络安全运行的原则与策略,确保电力公司安全供电,提高经济利益.     

A review of safe operation area

For designing LDMOS, SOA is an important and complex parameter which is defined by current, voltage, waveform, pulse time, etc. In this paper, short-term and long-term factors that determine the SOA boundary are demonstrated. Methods to improve SOA are enumerated.     

Continuous-wave operation of terahertz quantum-cascade lasers

We report continuous-wave (CW) operation of a 4.4-THz quantum-cascade laser grown in the GaAs-AlGaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of /spl sim/25 /spl mu/W. In pulsed mode, the maximum operating temperature is 52 K, with a threshold current of 108 mA at 4 K. CW lasing was achieved by using a small cavity ridge area (60/spl times/600 /spl mu/m), and by coating one of the laser facets. These two features allowed for a substantial decrease of the threshold current and therefore reduced detrimental heating effects. The role played by the lateral resistance of the 800-nm GaAs layer underneath the active region was also investigated. Experimental data is presented showing that the temperature of the active region, which eventually hinders CW lasing, can be substantially influenced by the value of this lateral resistance.     

High-speed high-temperature operation of vertical-cavitysurface-emitting lasers

Vertical-cavity surface-emitting lasers emitting at 850 nm have been developed that are capable of 10-Gb/s operation at high temperatures. Measurements are made at 10 and 12.5 Gb/s at temperatures up to 150°C     

High-speed operation of interband cascade lasers

High-speed interband cascade lasers have been fabricated and the first experimental evidence that these devices can be directly modulated at a frequency of 3.2 GHz and above is reported.     

CW operation of semiconductor ring lasers

Semiconductor ring lasers have been fabricated in single quantum well material using electron-beam lithography and SiCl/sub 4/ dry etching. CW operation has been achieved in 84 mu m diameter rings at a threshold current of 24 mA. This low value makes the structure very suitable for monolithic integration in optoelectronic circuits.<>