(Pr, Co, Nb)-Doped SnO2 Varistor Ceramics

The effect on microstructure and electrical properties of (Co, Nb)-doped SnO₂ varistors upon the addition of Pr₂O₃ was investigated by scanning electron microscopy and by determining I – V , ɛ– f , and R – f relations. The threshold electric field of the SnO₂-based varistors increased significantly from 850 to 2280 V/mm, and the relative dielectric constants of the SnO₂-based varistors decreased greatly from 784 to 280 as Pr₂O₃ concentration was increased up to 0.3 mol%. The significant decrease of the SnO₂ grain size, from 4.50 to 1.76 μm with increasing Pr₂O₃ concentration over the range of 0–0.3 mol%, is the origin for the increase in the threshold voltage and decrease of the dielectric constants. The grain size reduction is attributed to the segregation of Pr₂O₃ at grain boundaries hindering the SnO₂ grains from conglomerating into large particles. Varistors were found to have a superhigh threshold voltage and a comparatively large nonlinear coefficient α. For 0.15 mol% Pr₂O₃-doped sample, threshold electric field and nonlinear coefficient α were measured to be 1540 V/mm and 61, and for 0.3 mol% Pr₂O₃-doped sample, V and α were 2150 V/mm and 42, respectively. Superhigh threshold voltage and large nonlinear coefficient α qualify the Pr-doped SnO₂ varistor as an excellent candidate for a high voltage protection system.     

Temperature/Composition Phase Diagram of the System Bi2O3-PbO

The Bi₂O₃-PbO phase diagram was determined using differential thermal analysis and both room- and high-temperature X-ray powder diffraction. The phase diagram contains a single eutectic at 73 mol% PbO and 635°C. A body-centered cubic solid solution exists above ∼600°C within a composition range of 30 to 65 mol% PbO. The compounds α-Bi₂O₃, σ5-Bi₂O₃, and γ-PbO (litharge) have wide solubility ranges. Four compounds, 6Bi₂O₃·PbO, 3Bi₂O₃·2PbO, 4Bi₂O₃,5PbO, and Bi₂O₃·3PbO, are formed in this system and the previously unreported X-ray diffraction patterns of the latter three compounds are reported. Diffraction patterns for some of these mixed oxides have been observed in ZnO-based varistors grown using Bi₂O₃ and PbO as sintering aids.     

Low Breakdown Voltage Varistors by Grain Boundary Diffusion of Molten Bi2O3 in ZnO

Diffusion of molten Bi₂O₃ into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi₂O₃ powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi₂O₃ layer between the grains. Separate wetting experiments have shown that the penetration of Bi₂O₃ into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed.     

Preparation of Porous Cr3C2 Grains with Cr2O3

Porous Cr₃C₂ grains (∼300 to 500 μm) with ∼10 wt% of Cr₂O₃ were prepared by heating a mixture of MgCr₂O₄ grains and graphite powder at 1450° to 1650°C for 2 h in an Al₂O₃ crucible covered by an Al₂O₃ lid with a hole in the center. The porous Cr₃C₂ grains exhibited a three-dimensional network skeleton structure. The mean open pore diameter and the specific surface area of the porous grains formed at 1600°C for 2 h were ∼3.5 (μm and ∼6.7 m²/g, respectively. The present work investigated the morphology and the formation conditions of the porous Cr₃C₂ grains, and this paper will discuss the formation mechanism of those grains in terms of chemical thermodynamics.     

Effects of TiO2 Seeding Layer on Crystalline Orientation and Ferroelectric Properties of Bi3.15Nd0.85Ti3O12 Thin Films Fabricated by a Sol–Gel Method

The effect of a 20-nm thick TiO₂ seeding layer on the growth of a Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin film on Pt(111) thin-film substrates has been studied. Under otherwise identical deposition process conditions, the BNT film could be turned from a highly random orientation to a (200) preference orientation by adding the seeding layer. Field-emission scanning electron microscope result reveals that the BNT thin film with the TiO₂ seeding layer is composed of fine grains with smaller sizes about 80–150 nm in diameter. The P _r and E _c values of the BNT thin film and BNT film with the TiO₂ seeding layer were 36 and 16 μC/cm², and 96.9 and 92 kV/cm at a voltage of 12 V, respectively. The fatigue test exhibited a very strong fatigue endurance up to 10⁹ cycles for both films. The leakage current densities were generally in the order of 10⁻⁶–10⁻⁵ A/cm² for both samples.     

Zinc Oxide Varistor Gas Sensors: I, Effect of Bi2O3 Content on the H2-Sensing Properties

Current ( I )-voltage ( V ) characteristics of porous ZnO varistors with different Bi₂O₃ content have been investigated in air as well as in H₂-air mixtures in the temperature range room temperature (RT)-600°C. The I-V characteristics measured at RT remained unchanged in the presence of H₂, but the breakdown voltage clearly shifted to a lower electric field in the temperature range 400–600°C. The breakdown voltage decreased with increasing H₂ concentration in air. The optimum amount of Bi₂O₃ for the largest decrease was found to be 1.0 mol%. Thus, ZnO varistors can be used as a new type of H₂ sensor. The results presented in this study also suggest the important role of excess oxygen ions existing at the ZnO-ZnO grain boundaries in developing the Schottky barrier as well as in the H₂-sensing mechanism of the varistors.     

The Influence of ZnF2 Doping on the Electrical Properties and Microstructure in Bi2O3–ZnO-Based Varistors

ZnO varistors with different amounts of ZnF₂ from 0.00 to 0.80 mol% were prepared using a solid-state reaction technique, to explore the potential application of ZnO. The F-doping effects on the microstructure and electrical properties of ZnO-based varistors were investigated. The average grain size of ZnO increased from 4.93 to 6.48 μm as the ZnF₂ content increased. Experimental results showed that as the ZnF₂ content increased, the breakdown voltage decreased from 617 to 367 V/mm, and the nonlinear coefficient did not change much. However, a slight increase was observed in the leakage current. Besides, when the ZnF₂ content increased, the donor concentration increased from 0.669 × 10¹⁸ to 8.720 × 10¹⁸ cm⁻³. The study indicated that ZnF₂ played a similar role as sintering aids to promote grain growth and the substitutional F atoms in the bulk served as a donor to increase the donor concentration.     

Processing and Mechanical Behavior of CrN/ZrO2(2Y) Composites

CrN powder consisting of granular particles of ∼3 μm has been prepared by self-propagating high-temperature synthesis under a nitrogen pressure of 12 MPa using Cr metal. Dense pure CrN ceramics and CrN/ZrO₂(2Y) composites in the CrN-rich region have been fabricated by hot isostatic pressing for 2 h at 1300°C and 196 MPa. The former ceramics have a fracture toughness ( K _IC) of 3.3 MPa ·m^1/2 and a bending strength (σ_b) of 400 MPa. In the latter materials almost all of the ZrO₂(2Y) grains (0.36–0.41 μm) are located in the grain boundaries of CrN (∼4.6 μm). The values of K _IC (6.1 MPa · m^1/2) and σ_b (1070 MPa) are obtained in the composites containing 50 vol% ZrO₂(2Y).     

Residual α–Si3N4 in O' Crystals in CeO2-Doped O'+β' SiAlON Ceramics

The microstructure of a pressureless sintered (1605°C, 90 min) O'+β' SiAlON ceramic with CeO₂ doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20–30 μm long), and a continuous matrix of small rodlike β' grains (< 1.0 μm in length). Many α-Si₃N₄ inclusions (0.1–0.5 μm in size) were found in the large O' grains. CeO₂-doping and its high doping level as well as the high Al₂O₃ concentration were thought to be the main reasons for accelerating the reaction between the α-Si₃N₄ and the Si-Al-O-N liquid to precipitate O'–SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant α–Si₃N₄ from the reacting liquid, resulting in a delay in the α→β-Si₃N₄ transformation. The large O' grains and the α-Si₃N₄ inclusions have a pronounced effect on the strength degradation of O'+β' ceramics.     

Influence of Process Variables on Microstructure and V-I Characteristics of Multicomponent ZnO-Based Nonlinear Resistors

Studies have been made of the effect of process variables such as calcination, initial particle size, and postsinterin on density, microstructure, V-I characteri stics, and energy -handling capability of a ZnO-based composite: 87.325 wt% ZuO + 0.1% Nb₂O₅+ 3.5% Sb₂O₅+ 6% Bi₂O₃+ 0.55% CoO + 0.7% MnO₂+ 0.9% Cr₂O₃+ 0.9% NiO + 0.025% Al(NO₃)₃. The nonlinear characteristics were found to be improved by the calcination of a ZnO + Nb₂O₅ mixture at 1200°C for 1h. The postsintering heat treatment was found to rejuvenate V-I characteristics of the degraded sample to a greater extent. Further, the postsintered sample containing Nb₂O₅, prepared by using a calcined charge of particle size around 1 μm, was found to possess better V-I characteristics and energy-handling capability compared to the samples prepared without the calcination step.     

Bi2O3 Vaporization in Microwave-Sintered ZnO Varistors

Vaporization of Bi₂O₃ in microwave-sintered ZnO varistors is discussed in this study. The Bi₂O₃ vaporization of ZnO varistors sintered by a conventional electric furnace is also studied for comparison. The results show that the Bi₂O₃ vaporization in microwave-sintered ZnO varistors is more homogenous from the surface to the inside of the sample, which results from the special thermal gradient inside the microwave-sintered samples, and we also find out that the Bi₂O₃ vaporization directly affects the electrical properties of ZnO varistors. Microwave-sintered samples exhibit more excellent electrical properties than the conventional ones because the homogenous Bi₂O₃ vaporization leads to more uniform microstructures.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.     

Electrical Properties of ZnO-Bi2O3 Ceramics

The nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi₂O₃ were measured. Many of the electrical properties are related directly to the microstructure, which consists of conductive ZnO grains separated by a continuous amorphous Bl₂O₃, phase. The origin of the nonlinear conduction in the intergranular phase was confirmed by experiments with evaporated thin films. The proposed conduction mechanism in varistors containing ZnO and Bi₂O₃ is a combination of hopping and tunneling in the amorphous phase.     

Porous Glass-Ceramics with a Skeleton of the Fast-Lithium-Conducting Crystal Li1+xTi2−xAlx(PO4)3

Porous glass-ceramics with a skeleton of the fast-lithium-conducting crystal Li_{1+ x} Ti_{2− x} Al _x (PO₄)₃ (where x = 0.3–0.5) were prepared by crystallization of glasses in the Li₂O─CaO─TiO₂─Al₂O₃–P₂O₅ system and subsequent acid leaching of the resulting dense glass-ceramics composed of the interlocking of Li_{1+ x} Ti_{2− x} Al _x (PO₄)₃ and β-Ca₃(PO₄)₂ phases. The median pore diameter and surface area of the resulting porous Li_{1+ x} Ti_{2− x} Al _x (PO₄)₃ glass-ceramics were approximately 0.2 μm and 50 m²/g, respectively. The electrical conductivity of the porous glass-ceramics after heating in LiNO₃ aqueous solution was 8 × 10⁻⁵ S/cm at 300 K or 2 × 10⁻² S/cm at 600 K.     

Origin and Growth Kinetics of Platelike Abnormal Grains in Liquid-Phase-Sintered Alumina

The grain-growth behavior of Al₂O₃ compacts with small contents (≤10 wt%) of various liquid-forming dopants was studied. Equiaxed and/or elongated grains were observed for the following dopants: MgO, CaO, SiO₂, or CaO + TiO₂. The platelike grains, defined as the abnormal grains larger than 100 μm with an aspect ratio ≥5 and with flat boundaries along the long axis, were observed when the boundaries were wet with the liquid phase and the codoping satisfied two conditions of size and valence. These dopings were Na₂O + SiO₂, CaO + SiO₂, SrO + SiO₂, or BaO + SiO₂. However, an addition of MgO to the Al₂O₃ doped with CaO + SiO₂ resulted in the change of grain shape from platelike to equiaxial. Equiaxed grains were also observed for the MgO + SiO₂ doping, indicating that two conditions were necessary but not sufficient to develop the platelike grains. The fast growth rate of the platelike grains was explained by an increased interfacial reaction rate due to the codopants. AT the same time the codopants made the basal plane, which appeared as the flat boundaries, the lowest energy plane. The appearance of the platelike grains was favored in compacts with a small grain size and with a narrow size distribution at the onset of abnormal grain growth. Accordingly, the use of starting powders with a small particle size and narrow size distribution, smaller amounts of dopings, and high sintering temperature resulted in an increased number of the platelike grains.     

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium-Doped Zinc Oxide Varistors

The effects of the oxide additives MnO₂, Co₃O₄, and Sb₂O₃, commonly incorporated in commercial Bi₂O₃-doped ZnO varistors, on the current–voltage characteristics and microstructure of 0.25 mol% V₂O₅-doped ZnO varistors have been studied. MnO₂ is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V₂O₅ content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO₂. Further increases in the V₂O₅ content of 1 mol% MnO₂-doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb₂O₃ is incorporated.     

The Study on Carbon Nanofiber (CNF)-Dispersed B4C Composites

Carbon nanofiber (CNF)-dispersed B₄C composites have been synthesized and consolidated directly from mixtures of elemental raw powders by pulsed electric current pressure sintering (1800°C/10 min/30 MPa). A 15 vol% CNF/B₄C composite with ∼99% of dense homogeneous microstructures (∼0.40 μm grains) revealed excellent mechanical properties at room temperature and high temperatures: a high bending strength (σ_b) of ∼710 MPa, a Vickers hardness ( H _v) of ∼36 GPa, a fracture toughness ( K _{I C} ) of ∼7.9 MPa m^1/2, and high-temperature σ_b of 590 MPa at 1600°C in N₂. Interfaces between the CNF and the B₄C matrix were investigated using high-resolution transmission electron microscopy, EDS, and electron energy-loss spectroscopy.     

2.0 μm Emission Properties and Energy Transfer between Ho3+ and Tm3+ in PbO—Bi2O3—Ga2O3 Glasses

Emission properties of 2.0 μm fluorescence and the energy transfer between Ho³⁺ and Tm³⁺ in 57PbO·25Bi₂O₃·18Ga₂O₃ (mol%) glass codoped with Ho³⁺ and Tm³⁺ were investigated. Cross-relaxation rates in Tm³⁺ increased approximately 5 times when the Tm₂O₃ concentration was increased from 1.0 to 1.5 wt%. Coefficients of the forward Tm³⁺→ Ho³⁺ energy transfer were about 15 times larger than those of the Tm³⁺← Ho³⁺ backward transfer. Analysis of the energy transfer and gain spectra indicated that the highest gain at the 2.0 μm wavelength region could be achieved from the glass with 1.5 wt% of Tm₂O₃ and 0.3 wt% of Ho₂O₃.     

High Electrical Conductivity and High Fracture Strength of Sc2O3-Doped Zirconia Ceramics with Submicrometer Grains

The microstructure, crystal phase, electrical conductivity, and mechanical strength of less than 7-mol%-Sc₂O₃-doped zirconia ceramics fabricated by comparatively low-temperature sintering at 1200–1300°C for 1 h were investigated. Zirconia ceramics having a uniform microstructure (grain size < 0.5 μm) stabilized with 6 mol% Sc₂O₃ showed high electrical conductivity (0.15 S/cm at 1000°C) and high fracture strength (660 MPa). With the increase of Sc₂O₃ content from 3.5 to 7 mol%, the grain size, fracture strength, and electrical conductivity at 1000°C changed from 0.2 to 0.5 μm, 970 to 440 MPa, and 0.07 to >0.2 S/cm, respectively. Sc₂O₃-doped zirconia polycrystals with high fracture strength and high electrical conductivity are promising candidates for the electrolyte material of solid oxide fuel cells.     

Semiconductor Passivation and Insulation Properties for Hydroxyl- and Fluoride-Free ZnO-SiO2-B2O3-Al2O3 Glasses Stabilized by Increased P2O5

F⁻- and OH⁻-free ZnO-B₂O₃-SiO₂-Al₂O₃-P₂O₅ glasses used for semiconductor-device passivation or insulation are investigated with regard to compositional dependencies for thermal expansion, viscosity points, and metal oxide semiconductor (MOS) capacitor properties. The experimental data show that thermal expansion increases, and flow points decrease, when P₂O₅ is substituted for B₂O₃. MOS capacitors passivated by OH⁻- and F⁻-free ZnO-based glasses exhibit normal capacitance-voltage curves.