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1.
郑传涛 《光电子快报》2011,7(2):101-104
To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi-mode interference (MMI) Mach-Zehnder interferometer (MZI)-based electro-optic (EO) switch is designed and optimized. Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and ±1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 ?. The manufacture tolerance is analyzed...  相似文献   

2.
由于太赫兹波电光取样探测技术中电光晶体存在的色散关系, 探测光的波长会直接影响到电光取样的探测带宽和效率.由于该色散关系的存在, 不同的电光晶体在电光取样中响应函数不同.本文研究了两种典型的电光晶体-碲化锌和磷化镓晶体的响应函数, 发现在选取的四种探测激光波长内(600 nm、800 nm、1200 nm、1600 nm), 800 nm的探测激光更合适碲化锌晶体, 1200 nm的激光更合适磷化镓晶体.对于不同厚度的晶体, 存在一个最优化的探测激光波长, 使得该晶体的电光响应函数有最宽的带宽.  相似文献   

3.
A compact and low-loss Y-branch splitter is designed made with a high refractive-index difference waveguide and using the authors' wavefront matching method. The splitter was then fabricated using silica-based planar lightwave circuit technology. Excess loss was less than 0.2 dB per branch over a wide wavelength range of 1250 to 1650 nm  相似文献   

4.
Polarization independent acousto-optic tunable filters (PIAOTF's) can operate as transparent wavelength-selective crossconnects to route signals in wavelength division multiplexed optical networks. In this paper, a new low power PIAOTF is characterized as a switch in multiwavelength operation, using four equally spaced lightwave signals with wavelengths between 1546 nm and 1558 nm. Interchannel interference due to sidelobe excitation is lower than -11 dB for single wavelength switching and is equal to -6 dB in the extreme case of simultaneous switching of all wavelength channels. Sources of interport and interchannel crosstalk for single and multiple wavelength switching are identified  相似文献   

5.
In this paper, we describe the procedure for designing low-loss Y-branch waveguides by the wavefront matching (WFM) method, and report experimental results as proof of concept. The designed Y-branches were fabricated using silica-based planar lightwave circuit (PLC) technology. A Y-branch fabricated with a 0.45%-Delta waveguide exhibited a low excess loss of less than 0.2 dB over a wide wavelength range of 1250 to 1650 nm. In addition, we demonstrate that the WFM-designed Y-branches enable us to provide compact 1 times 32 splitters with an average insertion loss of 16.0 dB at a wavelength of 1550 nm. In addition, we present some experimental results obtained using samples with different Delta values, and show that our design method is more efficient for a higher Delta waveguide suitable for functional PLC devices.  相似文献   

6.
光子晶体绿光滤波器的研究   总被引:4,自引:0,他引:4  
利用传输矩阵法设计了一种适用于绿光波段的光子晶体窄带滤波器,并研究了影响滤 波器特性的多种因素。结果表明:适当选取光子晶体结构参数,可将滤波器的中心波长移到绿光波段的532nm处,谱线线宽可达0. 0131nm。此外,随着光子晶体周期层数的增加,线宽进一步变窄;当缺陷层厚度减小时,滤波器的中心波长向短波段移动而谱线宽度几乎保持不变;当入射角增大时,滤波器的谱线宽度变窄但变化幅度不大且在小角度范围( 0~3°)内宽度几乎保持不变。这种绿光窄带滤光器有望在蓝绿光通信中得到应用。  相似文献   

7.
A planar lightwave circuit triplexer with good fabrication-error-tolerance is proposed and its characteristics are analyzed through simulations. To separate 1310 nm and 1480-to 1560-nm channels properly, the path length difference of two-stage Mach-Zehnder interferometers (MZIs) is set to be a multiple and half of the upstream wavelength (1310 nm) and the balance of the employed 3-dB directional couplers is optimized in 1480-to 1560-nm band. Two downstream channels (1490-and 1550-nm channels) are further separated using additional two-stage MZIs. A three-dimensional beam propagation method and transfer matrix method analysis predicts that the channel crosstalk at 1310-nm port would be less than -35 dB from 1290 to 1330 nm. The crosstalk could be less than -22 dB at two downstream channels and less than -55 dB at the upstream channel when the waveguide width error is as much as 0.2 mum.  相似文献   

8.
An 8×8 optical matrix switch consisting of asymmetric Mach-Zehnder (MZ) interferometer switching units with a waveguide intersection was fabricated using silica-based planar lightwave circuits (PLC's) on a silicon substrate. This switching unit can realize a high extinction ratio and a wide operation wavelength range even if the coupling ratios of the directional couplers (DC's) consisting the switching unit, deviate greatly from the ideal value of 50%. A matrix switch with a DC-coupling ratio of 30% was fabricated to test the validity of the proposed geometry. The average insertion loss was 7.3 dB in the transverse electric (TE) mode and 7.5 dB in the transverse magnetic (TM) mode. The average extinction ratio was 31.2 dB in the TE mode and 31.3 dB in the TM mode. The wavelength range with an extinction ratio greater than 20 dB was over 100 nm  相似文献   

9.
We demonstrate a rapidly tunable narrowband wavelength filter using unbalanced Mach-Zehnder interferometers in lithium niobate. It is designed to switch among eight channels spaced 50 GHz apart in optical frequency (approximately 0.4 nm in wavelength) in less than 50 ns. The insertion loss is 19 dB and crosstalk is less than -22 dB. The filter consists of a cascade of three electrooptically tunable unbalanced Mach-Zehnders and a feedback circuit to keep the filter centered on the desired wavelength  相似文献   

10.
We designed waveguide crossings with small angles by the wavefront matching method to reduce excess loss and crosstalk. The designed waveguide crossings were fabricated using silica-based planar lightwave circuit (PLC) technology. We experimentally obtained excess loss and crosstalk values of less than 0.3 and$-$30 dB, respectively, for a crossing angle of 5$^circ$, and of less than 0.1 and$-$38 dB, respectively, for an angle of 20$^circ$, in the 1530–1565-nm wavelength range. The designed waveguide crossings are promising as basic circuit elements for realizing more compact PLC devices.  相似文献   

11.
The authors have designed and demonstrated a 2×2 Mach-Zehnder switch in view of polarization independence as well as low propagation loss (α) and absorption change (Δα). To obtain polarization-insensitive refractive index change (Δn), a lattice-matched InGaAlAs-InAlAs multiple quantum-well (MQW) with a large detuning wavelength was used. Moreover, to reduce the insertion loss difference between polarizations, we applied a multimode-interferometer 3-dB coupler and a deep-etched high-mesa waveguide structure. This switch, therefore, can provide polarization-independent operation about both driving voltage and insertion loss, which is indispensable to practical optical switching applications. We also paid attention to Δα suppression when we decided the value of wavelength detuning and the length of the phase shift region. We also investigated the wavelength dependence of the switch. Within 1530-1560 nm, which is the erbium-doped fiber amplifier (EDFA) gain band, polarization independence in the driving voltage and the crosstalk was maintained. This result shows that the switch is also applicable in wavelength division multiplexing (WDM) applications  相似文献   

12.
A 2×2 cross/bar polymer electro-optic(EO) routing switch is proposed,which is composed of two passive channel waveguides and two active EO polymer microrings with bending radius of only 13.76 μm.Detailed structure,theory and formulation are provided to characterize the output power of the switch.For obtaining fundamental mode propagation,small bending loss and phase-matching between channel waveguide and microring resonator(MRR) waveguide,the structural parameters are optimized under the wavelength of 1550 nm.Analyses and simulations on output power and output spectra indicate that a switching voltage of 5 V is desired to realize the exchange between cross state and bar state,the crosstalk under cross state and that under bar state are about 28.8 dB and 39.9 dB,respectively,and the insertion losses under these two states are about 2.42 dB and 0.13 dB,respectively.Compared with our four EO switches reported before,this device possesses ultra-compact size of 0.233 mm×0.233 mm as well as low crosstalk and insertion loss,and therefore it can serve as a good candidate for constructing large-scale optical routers or switching arrays in photonic network-on-chip(NoC).  相似文献   

13.
This paper describes a silica-based 8×8 strictly nonblocking thermooptic matrix switch with a high-extinction ratio and low loss. We realized this matrix switch by using a configuration which combines a double Mach-Zehnder interferometer (MZI) switching unit and an N×N matrix arrangement thus reducing the total waveguide length. The 8×8 matrix switch was fabricated on a 4-in wafer using planar lightwave circuit technology. We obtained an average extinction ratio of 60.3 dB and an average insertion loss of 5.1 dB. The operating wavelength bandwidth completely covers the gain band of practical erbium-doped fiber amplifiers (EDFAs)  相似文献   

14.
Novel wavelength-insensitive thermooptic switches which use silica-based planar lightwave circuits are proposed and successfully demonstrated. The fabricated switch has an extinction ratio of more than 17 dB over a 1.25-1.65 μm wavelength range  相似文献   

15.
A wavelength multiplexer or demultiplexer plays ani mportant role in all wavelength division multiplexing( WDM) system.Silica-basedarrayed waveguide gratings(AWGs) offer attractive featuresinthis area due to theadvantage of large output channels and lowlo…  相似文献   

16.
Inthe future,optical communication systems will usemore exceptional optical fiber with high bandwidth.Dense wavelength division multiplexing(DWDM)isconsidered as a promising solution to the demand fortransportingterabits ofinformation viafibers[1].Arrayed…  相似文献   

17.
A wavelength-selective photonic switch is developed based on a Si microring resonator using thermooptic effect. The 10-mum-diameter microring resonator uses single-mode strip Si waveguides of dimension 0.25 mum times 0.45 mum operating at 1.5 mum. Full-width at half-maximum are in the range 0.1-0.2 nm. The ultrawide tunable range (>6.4 nm) and wide free spectral range (~18 nm) of the switch element enables wavelength reconflgurable multichannel matrix switch by wavelength multiplexing/demultiplexing. Average rise delay time of 14 mus with low switching power of 3.15 mW has been achieved with 0.2-nm wavelength tuning and 78 mus, 104 mW for 6.4-nm tuning. Fall delay times are usually less than 10 mus. Thermal simulations show 10%-20% agreement with the measurements up to 3.2-nm tuning. The compact size of the switch shows its potential as an active element in photonic integrated circuits.  相似文献   

18.
Manufacture of high performance uncooled 1300 nm distributed feed-back (DFB) lasers operating single mode over the −40 to +85°C range requires control of the wavelength variation across a 2″ wafer to less than 10nm and preservation of grating definition during processing and regrowth. We have used atmospheric pressure metalorganic vapor phase epitaxy, without substrate rotation to achieve the necessary uniformity. Material was assessed using photoluminescence, x-ray diffraction, transmission electron microscopy, electrochemical current/voltage profiling, and secondary ion mass spectroscopy. The devices are based on a strained quantum well structure with an n-type grating layer to provide gain coupling. The best result gave a wavelength spread across 32×32 mm center square of a 2″ InP wafer of 3 nm. Buried heterostructure DFBs manufactured with high yield in this way operate from −40 to +85°C, with thresholds at 85°C as low as 18 mA.  相似文献   

19.
This paper reports on the large area growth of InGaP/GaAs heterostructures for short wavelength applications (λ ∼ 650 nm) by low pressure MOVPE in a vertical, high speed, rotating disk reactor. Highly uniform films were obtained both on a single 50 mm diam wafer at the center of a 5 inch diam wafer platter and on three, 50 mm diameter GaAs wafers symmetrically placed on a 5 inch diam platter. Characterization was performed by x-ray diffraction, SEM, and room temperature photoluminescence (PL) mapping. For the single wafer growth, PL mapping results show that the total range on wavelength was ±2 nm with a 2 mm edge exclusion. The standard deviation of the peak wavelength,σ w , is 0.7 nm. Thickness uniformity, measured by SEM, is less than 2%. Similar results were obtained for the multi-wafer runs. Each individual wafer has aσ w of 1.1 nm. The wafers have nearly identical PL maps with the variation of the average wavelength from the three wafers within ±0.1 nm.  相似文献   

20.
This paper describes the system design and performance of an optical path cross-connect (OPXC) system based on wavelength path concept. The (OPXC) is designed to offer 16 sets of input and output fiber ports with each fiber transporting eight multiwavelength signals for optical paths. Each optical path has a capacity of 2.5 Gb/s. Consequently, the total system throughput is 8×16×2.5=320 Gb/s and the OPXC features high modularity and expandability for switch components. By exploiting planar lightwave circuit (PLC) technologies, four sets of (8×16) delivery-and-coupling-type optical switches (DC-switches) are developed for the 320 Gb/s throughput OPXC system. The DC-switch offers the average insertion-loss of 12.6 dB and ON/OFF ratio of 42.1 dB. The PLC arrayed-waveguide gratings are confirmed to successfully demultiplex the eight directly modulated signals, multiplexed at a spacing of 1 nm, with a crosstalk of under -25 dB. Eight wavelength-division multiplexing signals, directly modulated at 2.5 Gb/s, are confirmed to be transported over 330 km via a cross-connection node in the test-bed system that simulates five-node network. The experimental performances demonstrated In this paper ensures full scale implementation of the proposed optical path cross-connect system with 320 Gb/s throughput and high integrity  相似文献   

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