共面转换型42英寸液晶电视的发展

我们通过使用超级共面转换(SuperIn-Plane-Switching)模式和过驱动(Over-Driving)电路技术,开发出具有宽视角和快速响应的42英寸(1280×768,159)大尺寸液晶电视(LCD-TV)。通过使用膜超级共面转换技术获得了在任意方向的宽视角,通过优化液晶材料和液晶盒的设计,获得了更快的响应时间(12ms)。     

VA液晶显示器光程差测量方法分析

垂直排列Vertical Array简称VA,VA液晶显示器盒内液晶分子的排列方式是垂直排列,因此采用现有常用的光程差测试设备如CG-200,无法测量出VA液晶显示器的光程差。文章研究利用VA液晶显示器的显示机理,通过测试比较不同光程差对应的高压光电曲线,总结出测量VA液晶显示器光程差的简单方法。     

开启全新视听体验

自去年以来，液晶电视逐渐成了报刊、杂志以及百姓生活中的热门话题。飞利浦推出176度上下左右超大视角液晶电视，索尼将力战液晶面板市场，摩托罗拉进军液晶市场……这些接二连三的消息均在向消费者传递同一个信息：液晶时代即将来临。作为高端电视代表之一的液晶电视与传统电视相比，液晶电视的信号不失真，画质更加清晰而且健康环保．更重要的是使电视超薄化成为可能。     

高端彩电中国企业难有作为(下)

液晶显示器原本是用到电脑监视器上面，并不能直接搬过来当液晶电视，液晶电视要解决几个问题，一是视角问题，因为电脑监视器是个人近距离使用，所以液晶电脑监视器的视角只有40度左右，而液晶电视是多人中距离使用，因此必须有160度左右广阔的视角，广视角技术有日立Super-IPS技术，     

液晶电视技术的最新进展

介绍液晶显示屏的基本结构以及液晶电视的显像原理，并讨论液晶电视技术在视角、反应速度、亮度、对比度、开口率、残像消除等方面的一些新发展，对比液晶电视、等离子电视、优越性统显像管电视的特点。     

液晶电视技术的最新进展

介绍液晶显示屏的基本结构以及液晶电视的显像原理，并讨论液晶电视技术在视角、反应速度、亮度、对比度、开口率、残像消除等方面的一些新发展，对比液晶电视、等离子电视、优越性统显像管电视的特点。     

液晶电视的现时与未来

液晶显示已有数十年历史,早期的液晶显示屏尺寸小,性能差,主要用于电子手表、儿童玩具、仪表面板等,上世纪90年代开始用于台式机和笔记本电脑,2000年以后开始进入电视机视频行列,但它的可视角小、响应时间长、运动图像拖尾、清晰度差且价格昂贵,消费者较少购买。近几年,随着液晶屏生产技术的改进和生产工艺的提高,它的缺陷得到改进,各项性能指标得到提高,液晶电视屏幕尺寸从十几英寸到65英寸不等,今年7月索尼公司在青岛展出了82英寸的液晶电视。液晶电视频繁降价,使销量猛增,需求旺盛,曾经高不可攀的液晶电视开始走进普通百姓家。液晶电视机…     

基于BSO的液晶空间光调制器

紫外光敏材料硅酸铋(BSO)在短波长的蓝紫光激励下电阻率会急剧降低,可作为良好的光信息写入材料,用作光寻址的液晶空间光调制器(LC-SLM)的感光层.介绍了以BSO为基的光寻址透射式液晶空间光调制器的结构和工作原理,从BSO晶体产生光电导效应的机理出发,得到了光电流和光照功率的关系.实验测量了BSO晶体片在不同频率和不同强度的光照下的光电响应.通过对液晶分子指向矢分布随电压变化的理论计算,得到了在不同光照强度下BSO基的液晶空间光调制器产生的光程差,与实验中液晶盒在不同电压下产生的光程差有相同的变化趋势.     

液晶闪耀光栅中的指向矢二维分布与特性研究

在连续弹性体理论的基础上,采用差分迭代数值分析方法仿真模拟了液晶闪耀光栅中的液晶分子指向矢二维分布情况。利用液晶的电控双折射特性,对液晶光栅电极施加经过插值计算以及修正后的周期电压,使之形成光程差阶梯形分布,具有二元光栅结构的液晶闪耀光栅。得到了液晶光栅的光程差以及相位延迟曲线。通过实验,采用四分之一波片法作出了相位延迟随电压的变化关系曲线,验证了仿真结论,给出了周期电场分布的液晶闪耀光栅在正交偏光下的显微照片。     

基于FFS架构实现宽窄视角切换

基于公共场合隐私保护的需求,宽窄视角可切换的液晶显示技术有着迫切的市场需求。现有宽窄视角切换技术不但增加了显示装置的厚度与成本,而且降低了原本宽视角模式下的显示效果。本文研究了一种基于负性液晶FFS模式的宽窄视角切换技术,它通过在彩色滤光片一侧形成高预倾角配向(40°～60°),在同侧第三电极施加弱电场时,液晶分子离轴方向具有较大相位延迟,形成大视角观看时的暗态漏光与对比度下降,实现窄视角显示模式。而同侧第三电极施加强垂直电场时,大的预倾角液晶分子因负介电各项异性使得倾角降低,可减少暗态漏光和提升对比度,实现宽视角显示模式。验证结果表明:宽视角模式时,其上下左右视角均可达到85°以上;而窄视角模式时,左右视角仅为40°,且具有较好的对称性。本技术结构简单,驱动灵活,在防窥显示领域具有很好的应用前景。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.