Cerenkov-type second-harmonic generation in KNbO3channel waveguides

Cerenkov-type second-harmonic generation using KNbO₃ channel waveguides produced by MeV He⁺-ion implantation is presented from the viewpoint of device design. We derive the Cerenkov phase-matching condition for multimode waveguides and utilize Cerenkov-angle analysis as a tool for contact-free measurement of the effective indexes of guided modes of ion-implanted KNbO₃ channel waveguides at a wavelength of 860 nm. The measured mode indexes are in full agreement with calculations based on the effective-index method and the refractive index-depth profiles of ion-implanted KNbO₃ waveguides. The efficiency of Cerenkov-type second-harmonic generation is modeled using analytical approximations of the field distributions of the fundamental and the Cerenkov-radiation modes in embedded-channel waveguides. The acceptance width for Cerenkov-type frequency doubling in these ion-implanted waveguides is about one order of magnitude wider than for noncritical phase-matched second-harmonic generation in bulk KNbO₃ crystals. Based on the theoretical simulations, guidelines for optimum device design are given, and the possibility to increase the ultimate conversion efficiency to about 30% W^-1 cm^-1 through lateral-resonance enhancement of the second-harmonic field in KNbO₃ channel waveguides is demonstrated     

Rigorous, full-vectorial source-type integral equation analysis ofcircularly curved channel waveguides

A source-type integral equation method is presented to determine the propagation constants, the radiation losses, and the electromagnetic field distributions of the discrete (“guided”) modes in circularly curved, integrated optical channel waveguides embedded in a homogeneous background. The method can be extended to the case of a multilayered background, e.g. a ridge waveguide. The source-type integral equation forms an eigenvalue problem, where the electric field strength represents the eigenvector. This problem is solved numerically by applying the method of moments. Numerical results are presented for various rectangular channel waveguides situated in a homogeneous embedding and compared with those of other modeling methods     

Mode-matched ion-exchanged glass-waveguide bridge for high-performance dense wavelength division multiplexer

Data bit rate, 1-dB passband, and device dimensions are the key properties of dense wavelength division multiplexing (WDM) devices. For blazed-grating-based dense WDM devices, analysis shows that all these three properties can be enhanced by reducing the output fiber-array channel spacing. In this paper, we propose an ion-exchanged glass waveguide to reduce the output channel spacing. To fabricate the low-loss fiber-compatible waveguide, a field-assisted ion-exchange process is developed. The waveguides fabricated by this process have a propagation loss of 0.16 dB/cm and a coupling loss to single-mode fiber (SMF) of 0.1 dB. A 47-channel 100-GHz-spacing dense WDM integrated with the glass waveguide is then packaged and demonstrated. The device performance has verified the effectiveness of the proposed solution and the successfulness of the ion-exchanged glass-waveguide technique in this application.     

Cu离子交换过程对制备玻璃平面光波导特性的影响

用Cu离子交换技术,制备了soda-lime玻璃平面光波导。通过棱镜耦合技术测量了波导的有效折射率,用反WKB方法拟合得到了平面波导的折射率分布。研究发现,离子交换时间和温度2个可控的制备参数对制备的玻璃平面波导特性有较大影响,随着离子交换时间和温度的增加,波导的模式数和波导深度并非随之单调增加,波导模式数随着离子交换时间的增加先增加而后减小,而适当的离子交换时间可以使制备的波导具有最大的模式数和波导深度,且在该条件下增加离子交换温度可以提高Cu离子交换波导的蓝-绿发光强度,宽带发光中心波长在520 nm附近,发光强度取决于样品中Cu+的浓度以及Cu2+的影响。     

集成光杨氏干涉计生化传感器的设计和制备

报道一种结构新颖的集成光杨氏干涉计生化传感器。利用微光机电系统(MOEMS)加工工艺结合离子交换技术在玻璃基底上制作出成对的平行单模光波导阵列,并在每对波导中一条的中间区段淀积一层具有梯度末端的TiO2薄膜,覆膜波导用作传感,裸露波导作为参比,从而构成集成光杨氏干涉计芯片。研制结果表明,这种传感器与传统的集成光杨氏干涉计相比,不仅省去了Y型功率分配器和低折射率介质保护层,而且利用简单的狭缝探测器取代了昂贵的电荷耦合器(CCD)探测器,具有结构简单、制作容易和使用方便等优点。     

Analysis of the guided modes in slab-coupled waveguides using a variational method

The waveguiding properties of the slab-coupled waveguides (i.e., the optical stripline and the rib waveguide) are investigated by the vector variational method. The slab-coupled waveguides are low-loss optical waveguides which are easy to fabricate and design. In this paper, the propagation constants and the field intensity distributions of the slab-coupled waveguides are presented, and the effects on the wave-guiding properties caused by changing their geometrical parameters are discussed. The results obtained by employing the variational method are compared with those obtained by using other methods.     

High efficiency quasi-phasematched frequency doubling waveguides inKTiOPO4 fabricated by electric field poling

Waveguides for quasi-phasematched frequency doubling were fabricated using an applied electric field to produce periodic poling and ion-exchange to produce channel waveguides. A blue output power of 12 mW was achieved with 146 mW of infrared light in a 3.6 mm-long waveguide     

用于系统级封装的毫米波介质填充波导的研究

基于不断发展的系统级封装技术,提出了一种用于芯片间高速互连的新型可集成的物理器件:硅基毫米波介质填充波导。文中阐述了该器件的物理原理,采用建模、仿真相结合的方法对该模块进行了结构设计,利用新的设计思路结合半导体工艺解决了毫米波互连结构内部的反射、电压驻波比(VSWR)、信号耦合、准TEM-TE-准TEM转换传输问题以及毫米波互连结构阵列中信号泄露的问题,并利用半导体与MEMS加工工艺加以实现。测试结果表明宽度为680μm的单通道矩形波导,-10 d B带宽为9.8 GHz,相对带宽为12.56%;传输损耗为1 d B/cm,工作频带内相邻波导之间串扰低于-40 d B,可以形成大阵列并进行集成,从而实现芯片间数据的并行传输。     

Sol-gel glass waveguide and grating on silicon

This paper reports on the fabrication and characterization of hybrid organic-inorganic glass sol-gel slab and channel waveguides by ultraviolet light imprinting in thin films deposited by a one-step dip-coating process. The adjustment of chemical composition of the materials provides precise selection of refractive index from 1.48 to 1.52 at the wavelength of 632.8 mn. The refractive index of the waveguides at 1.55 μm is similar to that of optical fiber, thus reducing the reflection loss between the two to less than 0.01 dB. The effect of ultraviolet light exposure and heat treatment on waveguide refractive index is studied. Fabrication parameters to produce ridge waveguides are optimized to achieve very smooth side walls. Propagation losses in these waveguides are ~0.1 dB/cm. Single mode buried waveguides, at 1.55 μm wavelength, with circular mode profile are demonstrated     

Calculation of the fundamental mode sizes in optical channelwaveguides using Gaussian quadrature

A fast numerical method using Gaussian quadrature, which takes only seconds on a microcomputer, is presented for calculating the fundamental mode sizes in optical channel waveguides. Variational expressions for the square of the propagation constant, β² , of the TE- and TM-like modes are derived using the vector wave equations. For channel waveguides with gradual refractive index distributions, these expressions approach the variational expression obtained using the scalar wave equation. To show the usefulness of the numerical technique the authors present the results for titanium indiffused lithium niobate channel waveguide which are commonly used in integrated optical circuits. Since these waveguides have gradual refractive index distributions, both types of expressions give the same results; however, it takes less time to compute the mode sizes when using the variational expression obtained from the scalar wave equation. The authors find the calculated mode sizes are in good agreement with published measurements. From the comparison process, best fit parameters are obtained, which give mode sizes close to the values published in the literature. For one special case the authors are able to obtain an analytical variational expression and they use it to test the accuracy of the numerical method. They find that the values of β² given by both methods agree to six significant figures     

Fourier Decomposition Analysis of Anisotropic Inhomogeneous Dielectric Waveguide Structures

In this paper, we extend the Fourier decomposition method to compute both propagation constants and the corresponding electromagnetic field distributions of guided waves in millimeter-wave and integrated optical structures. Our approach is based on field Fourier expansions of a pair of wave equations, which have been derived to handle inhomogeneous mediums with diagonalized permittivity and permeability tensors. The tensors are represented either by a grid of homogeneous rectangles or by distribution functions defined over rectangular domains. Using the Fourier expansion, partial differential equations are converted to a matrix eigenvalue problem that correctly models this class of dielectric structures. Finally, numerical results are presented for various channel waveguides and are compared with those of other literature to validate the formulation.     

退火质子交换LiNbO3光波导低损耗耦合分析

利用光束传播法分析了退火质子交换铌酸锂光波导模场参数随波导宽度、深度和表面折射率改变的变化情况,指出波导模场受这些参数的综合影响,并讨论了波导结构参数对光纤．波导耦合效率的影响。结果表明,要实现最佳耦合,不同模场直径的光纤对波导结构参数的要求是不同的,这可供相应波导器件的设计和制备参考。     

Wavelength dispersion of effective refractive indices of Rb:KTiOPO/sub 4/ optical waveguides

Multimode planar optical waveguides in z-cut KTiOPO/sub 4/ (KTP) substrates have been fabricated using Rb/sup +/:K/sup +/ ion-exchange process. Variations in the refractive index profile and the surface index change with wavelength in these waveguides are approximated by a simple relation. The dispersion characteristics of the effective refractive indices for different guided modes before and after annealing are calculated based on this approximation and the WKB method. Furthermore, the wavelength dispersion can also be expressed using a sellmeier-like equation, and there is an excellent agreement between the calculated values and the measured data.     

Network analysis of eigenvalue problem for multilayer dielectric waveguide consisting of arbitrary number of layers

In this paper, the eigenvalue problem of a multilayer dielectric waveguide consisting of arbitrary number of layers is solved by the microwave network method. A general program with the function of computer graphics has been developed for analyzing the dispersion characteristics and the electromagnetic field distributions of an N layer dielectric waveguide. As examples of practical applications of the program, first, the dispersions and field patterns for the planar waveguides with refractive index of parabolic and exponential profiles are analyzed. Secondly, the procedure of mode conversion and mode separation in dielectric branching waveguides is vividly demonstrated through analyzing the field distributions of asymmetric multilayer dielectric structures and the general rules of mode conversion are discussed. The examples show that the present method possesses the advantages of versatility, rapidity, simplicity and accuracy.     

Index-and-dimensional taper and its application to photonic devices

A mode-field-converting optical channel waveguide with tapered refractive index and cross-sectional dimensions is proposed. In this waveguide, both the refractive index and cross-sectional dimensions of a core are adiabatically varied along a propagation direction in such a way that the normalized frequency V of the waveguide may be kept constant. Since radiation loss caused by waveguide imperfections is strongly dependent on the V value, the waveguide has good mode-field-converting capability without causing high radiation loss. Layer thickness and index of a core of a silica waveguide were tapered by modulating a raw material gas flow in a flame hydrolysis deposition method, and a channel width taper was formed by a photolithographical technique. In order to confirm the usefulness, taper waveguides have been used (1) to achieve good field matching between a fiber and a guided-wave optical switch, and (2) to fabricate a fiber-compatible monolithic 32×32 star coupler in a small chip     

Optical low coherence method for characterizing silica-basedarrayed-waveguide grating multiplexers

We describe a powerful method for the precise measurement of optical path phase errors and power-distribution coefficients in silica-based arrayed-waveguide grating multiplexers through the use of Fourier transform spectroscopy. The theoretical accuracies for measuring these parameters are ±1° and ±5%, respectively, when the geometrical step increment of the arrayed waveguides is greater than 48 μm. The method reveals the random distributions of optical path phase errors in two multiplexers with channel spacings of 100 and 10 GHz, and proves that these distributions are the main origins of the channel crosstalk. The method predicts that when optical path phase errors are sufficiently reduced, the channel crosstalk values will decrease to -39 and -29 dB, respectively, and these limits are due to slightly deformed power distributions     

Coupled GaAs multiple-quantum-well channel waveguides includingquadratic electrooptic effect

Two coupled channel waveguides using GaAs multiple quantum wells are investigated using an improved coupled-mode theory for anisotropic waveguides and the effective index method. The quadratic electrooptic effect in the multiquantum-well structures is taken into consideration. It is shown that only a moderate electric field for multiquantum-well waveguides is necessary to achieve the optical power switching compared with that required for a bulk GaAs waveguide     

Effects of silicon layer properties on device reliability for0.1-μm SOI n-MOSFET design strategies

We employ an advanced simulation method to investigate the effects of silicon layer properties on hot-electron-induced reliability for two 0.1-μm SOI n-MOSFET design strategies. The simulation approach features a Monte Carlo device simulator in conjunction with commercially available process and device simulators. The two channel designs are: 1) a lightly-doped (10¹⁶ cm^-3) channel and 2) a heavily-doped (10¹⁸ cm^-3) channel. For each design, the silicon layer thicknesses (T_Si) of 30, 60, and 90 nm are considered. The devices are biased under low-voltage conditions where the drain voltage is considerably less than the Si/SiO₂ barrier height for electron injection. A comparative analysis of the Monte Carlo simulation results shows that an increase in T_Si results in decreasing hot electron injection into the back oxide in both device designs. However, electron injection into the front oxide exhibits opposite trends of increasing injection for the heavily-doped channel design and decreasing injection for the lightly-doped channel design. These important trends are attributed to highly two-dimensional electric field and current density distributions. Simulations also show that the lightly-doped channel design is about three times more reliable for thick silicon layers. However, as the silicon layer is thinned to 30 nm, the heavily-doped channel design becomes about 10% more reliable instead     

Mode Converters for Coupling to High Aspect Ratio Silicon-on-Insulator Channel Waveguides

The design, simulation, and experimental performance of mode converters for coupling from single-mode silicon-on-insulator ridge waveguides to high aspect ratio channel waveguides are described. The converters consist of a two-level adiabatic taper structure. The final channel waveguide is 1.5 mum high by 0.8 mum wide. Simulations predict that for total coupler lengths longer than 20 mum, the coupling loss from the fundamental ridge mode to the slit mode is better than -0.2 dB. The couplers and waveguides were fabricated using a two-step self-aligned process. The measured coupling loss for fabricated mode converters is -0.4 dB     

Dispersion characteristics of diffused channel waveguides

A variational method is used to calculate dispersion curves for channel waveguides fabricated by masked diffusion. Composition profiles for the waveguides are obtained by numerical solution of the diffusion equation, assuming that the diffusant concentration in the unmasked region of the substrate surface is constant during the diffusion process. A linear dependence of refractive index change on diffusant concentration is assumed. The dependence of the number of guided modes on mask gap width and diffusion depth is determined as an aid to the design of modulators and switches for integrated optics.