Metallic Conductive Nanowires Elaborated by PVD Metal Deposition on Suspended DNA Bundles

Metallic conductive nanowires (NWs) with DNA bundle core are achieved, thanks to an original process relying on double‐stranded DNA alignment and physical vapor deposition (PVD) metallization steps involving a silicon substrate. First, bundles of DNA are suspended with a repeatable process between 2 µm high parallel electrodes with separating gaps ranging from 800 nm to 2 µm. The process consists in the drop deposition of a DNA lambda‐phage solution on the electrodes followed by a naturally evaporation step. The deposition process is controlled by the DNA concentration within the buffer solution, the drop volume, and the electrode hydrophobicity. The suspended bundles are finally metallized with various thicknesses of titanium and gold by a PVD e‐beam evaporation process. The achieved NWs have a width ranging from a few nanometers up to 100 nm. The electrical behavior of the achieved 60 and 80 nm width metallic NWs is shown to be Ohmic and their intrinsic resistance is estimated according to different geometrical models of the NW section area. For the 80 nm width NWs, a resistance of about few ohms is established, opening exploration fields for applications in microelectronics.     

Broadband photodetector of high quality Sb2S3 nanowire grown by chemical vapor deposition

Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property.In this work,one-dimensional Sb2S3 nanowires(NWs)with high crystallinity were grown via chemical vapor deposition(CVD)technique on SiO2/Si substrates.The Sb2S 3 NWs exhibited needle-like structures with inclined cross-sections.The lengths of Sb2S3 nanowires changed from 7 to 13 pm.The photodetection properties of Sb2S3 nanowires were comprehensively and systematically characterized.The Sb2S3 photodetectors show a broadband photoresponse ranging from ultraviolet(360 nm)to near-infrared(785 nm).An excellent specific detectivity of 2.1×1014 Jones,high external quantum efficiency of 1.5×104％,sensitivity of 2.2×104 cm2W-1 and short response time of less than 100 ms was achieved for the Sb2S3 NW photodetectors.Moreover,the Sb2S3 NWs showed out-standing switch cycling stability that was beneficial to the practical applications.The high-quality Sb2S3 nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.     

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.     

Facile solution synthesis of α-FeF3·3H2O nanowires and their conversion to α-Fe2O3 nanowires for photoelectrochemical application

We report for the first time the facile solution growth of α-FeF(3)·3H(2)O nanowires (NWs) in large quantity at a low supersaturation level and their scalable conversion to porous semiconducting α-Fe(2)O(3) (hematite) NWs of high aspect ratio via a simple thermal treatment in air. The structural characterization by transmission electron microscopy shows that thin α-FeF(3)·3H(2)O NWs (typically <100 nm in diameter) are converted to single-crystal α-Fe(2)O(3) NWs with internal pores, while thick ones (typically >100 nm in diameter) become polycrystalline porous α-Fe(2)O(3) NWs. We further demonstrated the photoelectrochemical (PEC) application of the nanostructured photoelectrodes prepared from these converted hematite NWs. The optimized photoelectrode with a ~400 nm thick hematite NW film yielded a photocurrent density of 0.54 mA/cm(2) at 1.23 V vs reversible hydrogen electrode potential after modification with cobalt catalyst under standard conditions (AM 1.5 G, 100 mW/cm(2), pH = 13.6, 1 M NaOH). The low cost, large quantity, and high aspect ratio of the converted hematite NWs, together with the resulting simpler photoelectrode preparation, can be of great benefit for hematite-based PEC water splitting. Furthermore, the ease and scalability of the conversion from hydrated fluoride NWs to oxide NWs suggest a potentially versatile and low-cost strategy to make NWs of other useful iron-based compounds that may enable their large-scale renewable energy applications.     

Non‐Volatile Ferroelectric Memory with Position‐Addressable Polymer Semiconducting Nanowire

One‐dimensional nanowires (NWs) have been extensively examined for numerous potential nano‐electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric‐gate field effect transistors (Fe‐FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill‐control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution‐dispersed droplet made it extremely difficult to fabricate arrays of NW Fe‐FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non‐volatile memories. Here, we present the NW Fe‐FETs with position‐addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe‐FETs with a ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) exhibited non‐volatile ON/OFF current margin at zero gate voltage of approximately 10² with time‐dependent data retention and read/write endurance of more than 10⁴ seconds and 10² cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times.     

Selective, electrochemically activated biofunctionalization of In2O3 nanowires using an air-stable surface modifier

Selective electrochemically activated biofunctionalization of In(2)O(3) nanowires (NWs) has been achieved, using monolayer coatings of p-dimethoxybenzene derivatives. Monolayer coatings of 4-(2,5-dimethoxyphenyl)butyl-phosphonic acid (DMP-PA) were deposited on planar indium-tin oxide (ITO) electrodes and In(2)O(3) NWs. The electrochemical behavior of the monolayer coating was first studied using ITO electrodes, as a model system for In(2)O(3) nanowires. When a potential of 950 mV vs a Ag/AgCl reference electrode is applied to an ITO electrode coated with DMP-PA in PBS buffer, the p-dimethoxyphenyl groups are converted to p-benzoquinone (BQ). The electrochemically formed benzoquinone groups react readily with alkyl thiol groups via a Michael addition. The reaction strategy optimized on ITO was applied to an In(2)O(3) NW mat sample coated with DMP-PA. Applying a potential of 950 mV to metal electrodes deposited on NWs converts the DMP-PA NW coating to BQ-PA, which reacts with a thiol-terminated 20-base oligonucleotide. These NWs showed strong fluorescence response after paring with the dye labeled compliment, demonstrating that the probe was bound to the NW surface and that it remained active toward hybridization with its compliment. The unactivated DMP-PA coated NWs showed no response, demonstrating the selective electrochemical functionalization of NWs and the potential of using them in multiplex sensing. We also compared the p-dimethoxybenzene derivative to the conventional hydroquinone analog. The results show that the former can largely enhance the selectivity during the functionalization of both ITO and In(2)O(3) NWs.     

Copper Nitride Nanowires Printed Li with Stable Cycling for Li Metal Batteries in Carbonate Electrolytes

The practical implementation of the lithium metal anode is hindered by obstacles such as Li dendrite growth, large volume changes, and poor lifespan. Here, copper nitride nanowires (Cu₃N NWs) printed Li by a facile and low-cost roll-press method is reported, to operate in carbonate electrolytes for high-voltage cathode materials. Through one-step roll pressing, Cu₃N NWs can be conformally printed onto the Li metal surface, and form a Li₃N@Cu NWs layer on the Li metal. The Li₃N@Cu NWs layer can assist homogeneous Li-ion flux with the 3D channel structure, as well as the high Li-ion conductivity of the Li₃N. With those beneficial effects, the Li₃N@Cu NWs layer can guide Li to deposit into a dense and planar structure without Li-dendrite growth. Li metal with Li₃N@Cu NWs protection layer exhibits outstanding cycling performances even at a high current density of 5.0 mA cm⁻² with low overpotentials in Li symmetric cells. Furthermore, the stable cyclability and improved rate capability can be realized in a full cell using LiCoO₂ over 300 cycles. When decoupling the irreversible reactions of the cathode using Li₄T_i5O₁₂, stable cycling performance over 1000 cycles can be achieved at a practical current density of ≈2 mA cm⁻².     

Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates

Lateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [211] in parallel to the Si +/-[110] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ doping, the resistivity of the In2O3 NWs has been tuned. The lateral self-aligned In2O3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.     

Two‐Dimensional Self‐Organization of an Ordered Au Silicide Nanowire Network on a Si(110)‐16 × 2 Surface

A well‐ordered two‐dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self‐organized on a Si(110)‐16 × 2 surface by the direct‐current heating of ≈1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long‐range spatial order and a high integration density over a mesoscopic area, and these two self‐ordering crossed arrays of parallel‐aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as ≈2 and ≈5 nm, respectively. The difference in the conductivities of two crossed‐NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self‐organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 × 2 domains, which are driven by the electrical field of direct‐current heating. Prospects for this Au silicide nanomesh are also discussed.     

ZnO nanowires hydrothermally grown on PET polymer substrates and their characteristics

Zinc oxide nanowires (ZnO NWs) were successfully synthesized on the ITO/PET polymer substrates by a hydrothermal method. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy investigations were carried out to characterize the crystallinity, surface morphologies, and orientations of these NWs, respectively. The influence of NW surface morphologies on the optical and electrical properties of ZnO NWs was studied. The hydrothermally grown ZnO NWs with direct band gap of 3.21 eV emitted ultraviolet photoluminescence of 406 nm at room temperature. Field emission measurements revealed that the threshold electric fields (Eth, current density of 1 mA/cm2) of ZnO NWs/ITO/PET and ZnO NWs/ZnO/ITO/PET are 1.6 and 2.2 V/microm with the enhancement factors, beta values, of 3275 and 4502, respectively. Furthermore, the field emission performance of ZnO NWs deposited on the ITO/PET substrate can be enhanced by illumination with Eth of 1.3 V/microm and displays a maximum emission current density of 18 mA/cm2. The ZnO NWs successfully grown on polymer substrate with high transmittance, low threshold electric field, and high emission current density may be applied to a flexible field emission display in the future.     

An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires

An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precursor (antimony glycolate) was formed and a good NW morphology with a controlled antimony doping concentration was successfully achieved. A doping concentration study suggested an antimony glycolate absorption doping mechanism. By fabricating and characterizing NW-based field effect transistors (FETs), stable p-type conductivity was observed. A field effect mobility of 1.2 cm(2) V(-1) s(-1) and a carrier concentration of 6 × 10(17) cm(-3) were achieved. Electrostatic force microscopy (EFM) characterization on doped and undoped ZnO NWs further illustrated the shift of the metal-semiconductor barrier due to Sb doping. This work provided an effective large-scale synthesis strategy for doping ZnO NWs in aqueous solution.     

Nanopatterning of ultrananocrystalline diamond nanowires

We report the fabrication of horizontally aligned ultrananocrystalline diamond (UNCD) nanowires (NWs) via two different approaches. First, with the top-down approach by using electron beam lithography (EBL) and reactive ion etching (RIE) with a photo resist layer as an etch mask. Using this approach, we demonstrate fabrication of 50?μm long UNCD NWs with widths as narrow as 40?nm. We further present an alternative approach to grow UNCD NWs at pre-defined positions through a selective seeding process. No RIE was needed either to etch the NWs or to remove the mask. In this case, we achieved UNCD NWs with lengths of 50?μm and smallest width of 90?nm respectively. Characterization of these nanowires by using scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows that the UNCD NWs are well defined and fully released, with no indication of residual stress. Characterization using visible and ultraviolet (UV) Raman spectroscopy indicates that in both fabrication approaches, UNCD NWs maintain their intrinsic diamond structure.     

Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates

GaAs nanowires (NWs) have been extensively explored for next generation electronics, photonics and photovoltaics due to their direct bandgap and excellent carrier mobility. Typically, these NWs are grown epitaxially on crystalline substrates, which could limit potential applications requiring high growth yield to be printable or transferable on amorphous and flexible substrates. Here, utilizing Ni as a catalytic seed, we successfully demonstrate the synthesis of highly crystalline, stoichiometric and dense GaAs NWs on amorphous SiO(2) substrates. Notably, the NWs are found to grow via the vapor-solid-solid (VSS) mechanism with non-spherical NiGa catalytic tips and low defect densities while exhibiting a narrow distribution of diameter (21.0 ± 3.9 nm) uniformly along the entire length of the NW (>10 μm). The NWs are then configured into field-effect transistors showing impressive electrical characteristics with I(ON)/I(OFF) > 10(3), which further demonstrates the purity and crystal quality of NWs obtained with this simple synthesis technique, compared to the conventional MBE or MOCVD grown GaAs NWs.     

Chlorine-doped n-type CdS nanowires with enhanced photoconductivity

Cl-doped n-type CdS NWs with single-crystal wurtzite structure and [Formula: see text] growth direction were synthesized by using CdCl(2) as the dopant via a thermal co-evaporation method. By controlling the Cl vapor pressure during the growth, the conductivity of the CdS:Cl NWs can be tuned in a wide range of five orders of magnitude. A nano-photodetector based on the CdS:Cl NWs shows high sensitivity to visible light with excellent stability and reproducibility. Significantly, the photoconductivity of the CdS NWs is greatly enhanced by Cl doping and the responsivity and photoconductive gain of the CdS:Cl NWs have substantially increased compared with the undoped CdS NWs. Further study also demonstrates the polarization-dependent photoconductivity of the CdS:Cl NWs. It is expected that the CdS:Cl NWs with tunable optoelectronic properties will have important applications in high-performance nano-optoelectronic devices.     

Construction of 1D Heterogeneous Co/C@Ag Nws With Tunable Electromagnetic Wave Absorption And Shielding Performance

In this study, silver nanowires (Ag NWs) are synthesized at first, and then the 1D heterogeneous Co/C@Ag NWs with a kebab- and popsicle-like microstructures are constructed by in situ growth ZIF-67 on Ag NWs combined with calcination. Results show that the EM wave prevention performance of composites depends on the loading of Co/C particles threaded on the Ag NWs. The popsicle-like structure with high Co/C loading gives Co/C@Ag NWs excellent EM wave absorption performance, which achieved a minimum reflection loss (RL_min) of −44.5 dB with a low filling of 30 wt.% in paraffin; while the kebab-like structure with low Co/C loading shows good electromagnetic interference (EMI) shielding effectiveness (SE_T) of 30.2 dB at the same filler ratio. The enhanced EM wave absorption performance is attributed to the synergy of multiple energy dissipation mechanisms including dielectric loss, magnetic loss, polarization loss, eddy-current loss, multiple reflection loss, as well as proper impedance matching; the good EMI shielding performance is mainly due to the conduction loss brought by the Ag NWs with ultrahigh conductivity. This work provides a reference for the design of electromagnetic wave prevention material with tuned absorption and shielding performance.     

Pressure Welding of Silver Nanowires Networks at Room Temperature as Transparent Electrodes for Efficient Organic Light‐Emitting Diodes

In this work, polymethylmethacrylate (PMMA) as a superior mediate for the pressure welding of silver nanowires (Ag NWs) networks as transparent electrodes without any thermal treatment is demonstrated. After a pressing of 200 kg cm^?2, not only the sheet resistance but also the surface roughness of the PMMA‐mediated Ag NWs networks decreases from 2.6 kΩ sq^?1 to 34.3 Ω sq^?1 and from 76.1 to 12.6 nm, respectively. On the other hand, high transparency of an average transmittance in the visible wavelengths of 93.5% together with a low haze value of 2.58% can be achieved. In terms of optoelectronic applications, the promising potential of the PMMA‐mediated pressure‐welded Ag NWs networks used as a transparent electrode in a green organic light‐emitting diode (OLED) device is also demonstrated. In comparison with the OLED based on commercial tin‐doped indium oxide electrode, the increments of power efficiency and external quantum efficiency (EQE) from 80.1 to 85.9 lm w^?1 and 19.2% to 19.9% are demonstrated. In addition, the PMMA‐mediated pressure welding succeeds in transferring Ag NWs networks to flexible polyethylene naphthalate and polyimide substrates with the sheet resistance of 42 and 91 Ω sq^?1 after 10 000 times of bending, respectively.     

Very high thermopower of Bi nanowires with embedded quantum point contacts

Quantum confinement effects in bismuth (Bi) nanowires (NWs) are predicted to impart them with high thermopower values and hence make them efficient thermoelectric materials. Yet, boundary scattering of charge carriers in these NWs operating in the diffusion transport regime mask any quantum effects and impede their use for nanoscale thermoelectric applications. Here we demonstrate quantum confinement effects in Bi NWs by forming in their structure ballistic quantum point contacts (QPCs) leading to exceptionally high thermopower values (S > 2 mV/K). The power factor, S(2)G, of the QPCs is maximized at G ~ 0.25G(0) (where G(0) is the quantum of conductance) within agreement with a one-band model with step edge characteristics.     

A study on rapid growth and piezoelectric effect of ZnO nanowires array

This work presents a rapid and simple synthesis procedure for ZnO nanowires (NWs) array by using the vapor–solid (VS) method. Experimental results indicate that the length and diameter of the grown ZnO NWs are associated with the temperature effect, while the growth density of NWs is strongly related to gas flux during the VS process. Additionally, the synthesized ZnO NWs possess specific crystalline qualities, making them highly promising for piezoelectric device applications. Therefore a piezoelectric type nanogenerator based on the ZnO NWs is also designed in this work, with a high output of piezoelectric current of 0.6 μA cm⁻² obtained as well. Our results further demonstrate the feasibility of applying piezoelectric energy via the rapidly grown ZnO NWs array.     

Highly sensitive and selective trimethylamine sensor using one-dimensional ZnO-Cr2O3 hetero-nanostructures

Highly selective and sensitive detection of trimethylamine (TMA) was achieved by the decoration of discrete p-type Cr(2)O(3) nanoparticles on n-type ZnO nanowire (NW) networks. Semielliptical Cr(2)O(3) nanoparticles with lateral widths of 3-8 nm were deposited on ZnO NWs by the thermal evaporation of CrCl(2) at 630 °C, while a continuous Cr(2)O(3) shell layer with a thickness of 30-40 nm was uniformly coated on ZnO NWs at 670 °C. The response (R(a)/R(g): R(a), resistance in air; R(g), resistance in gas) to 5 ppm TMA of Cr(2)O(3)-decorated ZnO NWs was 17.8 at 400 °C, which was 2.4 times higher than that to 5 ppm C(2)H(5)OH and 4.3-8.4 times higher than those to 5 ppm p-xylene, NH(3), benzene, C(3)H(8), toluene, CO, and H(2). In contrast, both pristine ZnO and ZnO (core)-Cr(2)O(3) (shell) nanocables (NCs) showed comparable responses to the different gases. The highly selective and sensitive detection of TMA that was achieved by the deposition of semielliptical Cr(2)O(3) nanoparticles on ZnO NW networks was explained by the catalytic effect of Cr(2)O(3) and the extension of the electron depletion layer via the formation of p-n junctions.     

Enhanced photoluminescence and field-emission behavior of vertically well aligned arrays of In-doped ZnO Nanowires

Vertically oriented well-aligned Indium doped ZnO nanowires (NWs) have been successfully synthesized on Au-coated Zn substrate by controlled thermal evaporation. The effect of indium dopant on the optical and field-emission properties of these well-aligned ZnO NWs is investigated. The doped NWs are found to be single crystals grown along the c-axis. The composition of the doped NWs is confirmed by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), and X-ray photospectroscopy (XPS). The photoluminescence (PL) spectra of doped NWs having a blue-shift in the UV region show a prominent tuning in the optical band gap, without any significant peak relating to intrinsic defects. The turn-on field of the field emission is found to be ～2.4 V μm(-1) and an emission current density of 1.13 mA cm(-2) under the field of 5.9 V μm(-1). The field enhancement factor β is estimated to be 9490 ± 2, which is much higher than that of any previous report. Furthermore, the doped NWs exhibit good emission current stability with a variation of less than 5% during a 200 s under a field of 5.9 V μm(-1). The superior field emission properties are attributed to the good alignment, high aspect ratio, and better crystallinity of In-doped NWs.