应变对耦合量子点空穴基态混合特性的影响

考虑应变对量子点结构产生的重要影响,采用六带K·P理论模型计算了耦合量子点系统在不同耦合距离下空穴基态及激发态的能态特性,探讨了应变效应对耦合量子点空穴基态反成键态特性的影响.计算结果表明,单轴应变对量子点的空穴能带有主要影响:首先它使重空穴(HH),轻空穴(LH)能级分裂增加,减少了HH,LH的混合;同时,改变了LH的束缚势垒,使得空穴基态波函数较多局限在底部量子点中.在不考虑应变的情况下,随着量子点之间耦合强度的减小,价带基态能级和激发态能级发生反交叉现象,基态从成键态翻转为反成键态.应变效应使得量子点的重空穴及轻空穴的能带发生改变,轻重空穴耦合减弱,基态和激发态之间发生成键、反成键态翻转的临界距离明显减小.     

Near-field spectroscopy of single quantum dots at room temperature

The observation of photoluminescence spectra of self-assembled single InGaAs quantum dots at room temperature was performed under weak excitation conditions using a near-field scanning optical microscope. Operation in illumination-collection mode with a highly sensitive double-tapered optical fibre probe enabled detection of weak photoluminescence signals at room temperature with high efficiency and high spatial resolution. Each single quantum dot was imaged with a spatial resolution of about 250 nm, which corresponded to a quarter of the wavelength of the photoluminescence from quantum dots. The photoluminescence yields of individual quantum dots were widely distributed and were found to decrease with photoluminescence energy. This result serves as a clue to be pursued for better understanding of the thermal excitation of the carrier from confined states in quantum dots.     

The determination of the size and shape of buried InAs/InP quantum dots by transmission electron microscopy

Bright-field, diffraction-contrast imaging in the transmission electron microscope has been applied to the determination of the diameter and height populations of a single layer of buried, pure, InAs/InP quantum dots (QDs). Plan-view diffraction contrast from the QDs was observed to increase significantly when the sample was tilted away from the [001] growth direction to near the [111] zone-axis orientation. This added contrast was a result of contributions to the displacement of atoms in a direction perpendicular to the electron beam arising from strain in the growth direction. Since the strain in the growth direction was about an order of magnitude larger than the strain perpendicular to the growth direction, as the sample is tilted away from the [001] zone-axis condition, the larger strain component increases the projected strain thereby increasing the QD contrast in the image. For the sample studied, both of the populations for the QD diameter and the image contrast were observed to be multimodal with the seven peaks in the contrast distribution correlating with seven distinct populations of QDs each differing in height by one monolayer (ML), from 3 to 9MLs. An analysis of the theoretically expected and experimentally observed standard deviations in the Gaussian fits to the QD diameter and height distributions provided an additional constraint in the selection of the optimal model for the multimodal distributions.     

Electron microscopy of quantum dots

This brief review describes the different types of semiconductor quantum dot systems, their main applications and which types of microscopy methods are used to characterize them. Emphasis is put on the need for a comprehensive investigation of their size distribution, microstructure, chemical composition, strain state and electronic properties, all of which influence the optical properties and can be measured by different types of imaging, diffraction and spectroscopy methods in an electron microscope.     

In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

We have developed an in situ mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions. This mask can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; thus, device structures can be fabricated without exposing the sample surfaces to air. Moreover, this mask enables the observation of reflection high-energy electron diffraction during growth with the mask positioned on the sample holder and provides for the formation of marker layers for ensuring alignment in the processes following the selective growth. To explore the effectiveness of the proposed in situ mask, we used it to grow quantum dot (QD) structures in narrow regions and verified the perfect selectivity of the QD growth. The grown QDs exhibited high optical quality with a photoluminescence peak at approximately 1.30 mum and a linewidth of 30 meV at room temperature. The proposed technique can be applied for the integration of microstructures into optoelectronic functional devices.     

Transmission electron microscopy of semiconductor quantum dots

We report on plan-view transmission electron microscopy techniques, by which the size, the actual shape and the strain of a coherent quantum dot in semiconductor heterostuctures can be measured very accurately. The bright-field suppressed-diffraction imaging condition where no strong diffracted beam is excited in the sample provides reliable size measurement. Using suppressed-diffraction imaging condition, the intensity contour in a coherent island is related to the height, and thus the detailed shape and the aspect ratio can be extracted. The strain contrast of a coherent island imaged using an exact two-beam dynamical diffraction condition is useful for strain measurement and the corresponding features is related to the shape of an island. The physical origins and accuracy of interpretation of the image contrast are discussed, using the simulations and experimental examples.     

Low-temperature near-field spectroscopy of CdTe quantum dots

A near-field optical microscope has been developed for operation at low temperature. This microscope is used to study the photoluminescence of CdTe-based quantum dots. Spectra collected upon approaching the optical tip into the near-field region of the sample reveal the evolution from a broad far-field luminescence band − that is typical for a large ensemble of dots − to a near-field structure made up of a few sharp peaks originating from individual dots. Experiments carried out in the excitation-collection mode through the optical tip allow study of the effect of an increase in excitation power on the near-field spectra. It is found that upon increasing the excitation by two orders of magnitude, a spatially resolved spectrum progressively transforms back into a broad 'far-field-like' spectrum. Photoluminescence images taken by scanning the sample under the tip are used to discriminate various contributions coming from individual dots.     

Photolithographic process for the patterning of quantum dots

Recently, quantum dots have been used as molecular probes substituting for conventional organic fluorophores. Quantum dots are stable against photobleaching and have more controllable emission bands, broader absorption spectra, and higher quantum yields. In this study, an array of ZnS-coated CdSe quantum dots on a slide glass has been prepared by photolithographic method. The array pattern was prepared using a positive photoresist (AZ1518) and developer (AZ351). The patterned glass was silanized with 3-aminopropyltriethoxysilane (APTES), and carboxyl-coated quantum dots were selectively attached onto the array pattern. The silanization was examined by measuring contact angle and the surface of the array pattern was analyzed using AFM and fluorescent microscope.     

Determination of energy scales in few-electron double quantum dots

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately, this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.     

TEM characterization of self-organized CdSe/ZnSe quantum dots

CdSe quantum dots (QDs) grown on ZnSe were investigated by various transmission electron microscopy (TEM) techniques including diffraction contrast imaging, high-resolution and analytical transmission electron microscopy both of plan-view as well as cross-section specimens. The size of the QDs ranges from about 5–50 nm, where from the contrast features in plan-view imaging two classes can be differentiated. In the features of the smaller dots there is no inner fine structure resolvable. The larger ones exhibit contrast features of fourfold symmetry as expected for pyramid-like islands. Corresponding simulations of diffraction contrast images of truncated CdSe pyramids with the edges of the basal plane orientated parallel to <100> are in relatively good agreement with this assumption. In TEM diffraction contrast imaging of cross-section samples the locations of the quantum dots are visualized by additional dark contrast features. The QDs have a distinct larger extension in growth direction compared to the almost uniformly thick CdSe wetting layer. The presence of the CdSe QDs was also confirmed by energy-dispersive X-ray spectroscopy.     

Optimization tools of parallel simulation of nanostructures with quantum dots

Tools for optimizing the performance of parallel programs on multi-architectural distributed computing systems are considered. A method for optimizing the embedding of parallel MPI-program into computing clusters with a hierarchical communication network structure is described. An adaptive approach to the delta optimization of restore points is proposed for effective fault-tolerant simulation on distributed computing systems.     

Formation and structural features of silicon quantum dots in germanium

The formation of Si quantum dots on Ge is studied. Fundamental differences were found between the nucleation and growth of quantum dots on substrates with different orientations, related to both the formation of a SiGe solid solution layer and the shape of quantum dots. The temperature interval of formation of Si nanocrystals on Ge (111) is determined. It is shown that a change in the epitaxy temperature from 480 to 400 °C increases the silicon content in quantum dots from 58 to 75%. The effect of surfactants (in particular, hydrogen) on the nucleation and growth of silicon nanoislands is analyzed, showing that the use of hydrogen as a surfactant leads to a decrease in the size of quantum dots and a substantial increase in their density. The observed effects are attributed to the suppression of surface diffusion of atoms in the presence of hydrogen.     

Development and application of quantum dots for immunocytochemistry of human erythrocytes

Recent developments in quantum dot technology have resulted in the introduction of new fluorescence immunocytochemical probes. In contrast to organic fluorophores, which are not photostable, the high quantum yield and remarkable photostability of quantum dots solve major problems associated with immunocytochemical studies of erythrocytes. We report here the first application of quantum dots to immunocytochemical studies of human erythrocytes capable of being used in high‐magnification, three‐dimensional erythrocyte reconstruction techniques. The procedure consists of stabilizing human erythrocytes with a homofunctional imidoester cross‐linker to minimize fixative‐induced autofluorescence followed by reacting with a quantum dot – monoclonal antibody complex to label band 3 protein. Our new procedure clearly showed a non‐homogeneous, raft‐like distribution of band 3 protein in the erythrocyte membrane. We also demonstrate the applicability of our technique to studies of erythrocyte membrane modifications occurring during the invasion of a malaria parasite.     

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.     

半导体量子点在生物荧光分析中的应用

半导体纳米材料具有独特的光学性质,在过去的近二十年中引起了人们的广泛关注.其中研究最多的是半导体量子点.与传统的有机染色剂相比,表面充分钝化的量子点具有激发光谱宽,发射光谱窄且对称,最大发射波长位置可调,不易光解的特点,因此可以作为荧光探针对生物样品和细胞进行成功染色.若表面未加充分钝化,则量子点的荧光特性对周围环境的变化非常敏感,这是此类荧光探针检测无机离子、蛋白质、DNA的理论基础.本文综述了量子点在荧光染色剂和荧光探针中的应用,并对其存在问题和应用前景进行了分析讨论.     

Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

A new approach to the creation of circularly ordered Ge nanoislands by epitaxy on the surface of a heterophase structure consisting of a Si(100) substrate with premade seeds in the form of SiGe nanodisks or SiGe nanorings is developed. It is shown that the spatial configuration of islands in the group is due to the nucleation of the islands in the area of local minima of the elastic energy density on the surface of a circular seed. On the basis of this approach, a number of multilayer structures with vertically aligned ring groups of quantum dots were grown. The elemental composition and luminescent properties of the ordered structures are studied.     

Ge/Si heterostructures with Ge quantum dots for mid-infrared photodetectors

This paper presents a review of studies of the photovoltaic characteristics of Ge/SiGe/Si heterostructures containing layers of Ge quantum dots in Si and SiGe matrices. In the experiments, the elemental composition of the SiGe films and its profile, the doping level and profiles, the position of the doped layers of Si and SiGe relative to the plane of quantum dots, and the number of layers of quantum dots were varied. The results of these studies were used to implement infrared photodetector elements functioning at normal light incidence in atmosphere transmission windows of 3 ÷ 5 and 8 ÷ 12 µm. The photodetectors have a high (up to 10³) photoelectric gain, a high detection ability in the photovoltaic and photoconductive modes (up to 0.8 · 10¹¹ cm · Hz^1/2/W at a wavelength of about 4 m), and a current sensitivity of up to 1 mA/W, reach the background limited infrared performance already at a temperature of 110 K, and can be built in monolithic focal plane arrays on silicon substrates.     

Mesoscopic structures with GE quantum dots in SI for single-photon detectors

The results of investigation of photostimulated current switching during irradiation of mesoscopic structures based on Ge quantum dots in Si by weak infrared fluxes are presented. The small dimensions of the channel (approximately 70–200 nm) provide an opportunity to observe giant photoconductivity fluctuations which are due to the strong dependence of the hopping current on the filling of quantum dots by charge carriers. Replacing the silicon substrate with silicon-on-insulator made it possible to exclude the predominance of band conduction over hopping conduction at high temperatures and increase the photodetection temperature from 4.2 to approximately 100 K. The obtained results are the basis for the creation of a single-photon detector in a wide wavelength range.     

红色固态荧光碳量子点的制备及在指纹检测中的应用

荧光碳量子点是一种新型的光致发光纳米材料,由于其具有稳定的发光性能、丰富的表面官能团、安全无毒、生物相容性好、成本低廉等优势,在潜指纹检测和识别领域有着极大的应用前景。潜指纹是指人的手指分泌物留在固体接触面上靠肉眼难以分辨的痕迹,需要借助物理或化学方法以有效地显现和提取。到目前为止,关于碳量子点显影潜指纹并与计算机技术结合精确识别指纹的研究鲜有报道。以邻苯二胺为前驱体,以草酸锌为修饰剂,采用一步溶剂热法成功合成了红色荧光碳量子点,将红色荧光碳量子点与聚乙烯吡咯烷酮混合,干燥研磨后制备出均匀分散、量子产率高达27%的红色固态荧光碳量子点,并成功应用于多种基底上潜指纹的增强检测。为了精确评价显影潜指纹与目标对照指纹之间的相似度,通过结构相似度算法进行相似度分析,锡纸上潜指纹的匹配度高达90.5%,表明红色固态荧光碳量子点结合数字处理程序能很好地显影和精确识别潜指纹,在刑事侦查领域具有极大的应用前景。     

Producing arrays of graphene and few-layer graphene quantum dots in a fluorographene matrix

Conductive islands (quantum dots) of graphene and few-layer graphene in a fluorinated graphene matrix were produced by chemical functionalization of graphene in aqueous hydrofluoric acid. The structures formed were investigated by measuring the current-voltage characteristics and by means of an atomic-force microscope used to measure the surface topography and lateral forces. The presence of conductive islands in the fluorinated matrix was shown, and their sizes were determined.