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本文对原PIN半导体探测器信号引出线结构线路进行了分析,为了消除小灵敏面积PIN探测器振荡现象,把原信号引出线结构改进成微带结构,并对改进后的探测器时间响应性能和线性电流进行了实验测量。 相似文献
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PIN半导体探测器在个人剂量仪中的应用研究 总被引:1,自引:0,他引:1
以SDM2000个人剂量仪为例,针对个人剂量仪的特点.对PIN半导体探测器在个人剂量仪中的应用进行了研究.并进行了详尽的性能测试.取得了较好的结果。 相似文献
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φ60mm×600μm硅PIN探测器γ灵敏度和时间响应测量 总被引:4,自引:1,他引:3
φ60mm×600μm硅PIN半导体探测器是近年国内新研制的大面积高灵敏度探测器,用1013Bq级的60Coγ放射源测量了该类探测器的60Co γ灵敏度,用CΓC脉冲辐射源(约0.2MeV)测量了该类探测器的时间响应.实验和理论计算表明:该类探测器的60Co γ灵敏度约为5 fC*cm2/MeV.脉冲响应上升时间约为10ns,脉冲响应半高宽约为35ns. 相似文献
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φ60mm×600μm硅PNI探测器γ灵敏度和时间响应测量 总被引:5,自引:1,他引:4
φ6 0 mm× 6 0 0μm硅 PIN半导体探测器是近年国内新研制的大面积高灵敏度探测器 ,用 10 13Bq级的 60 Coγ放射源测量了该类探测器的 60 Coγ灵敏度 ,用 CΓC脉冲辐射源 (约 0 .2 Me V)测量了该类探测器的时间响应。实验和理论计算表明 :该类探测器的 60 Coγ灵敏度约为 5 f C·cm2 / Me V。脉冲响应上升时间约为 10 ns,脉冲响应半高宽约为 35 ns。 相似文献
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用于带电粒子鉴别的BGO探测器 总被引:3,自引:2,他引:1
报道了BGO晶体作为带电粒子探测器的制作,测试结果,并在核物理实验中与Si(Au)穿透型探测器一起组成△E-E探测器望远镜。对带电粒子进行了鉴别,结果表明,该探测器系统有较高的粒子鉴别能力。 相似文献
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碲锌镉(CdZnTe)探测器是目前常温γ射线探测器中最主要的探测器之一,它可在常温下使用,无需象HPGe等半导体探测器要求低温(液氮制冷),又比常用的NaI(Tl)探测器具有更好的能量分辨。CdZnTe探测器的平均原于序数高,单位体积的探测效率相应较高,可做成体积小、重量轻的便携式探测器。同早期的CdTe常温探测器相比,CdZnTe探测器电阻率高了2个数量级,同时消除了极化效应,增强了工作稳定性,CdZnTe材料易加工处理。CdZnTe探 相似文献
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为探讨CZT探测器时间响应特性规律,采用指数拟合法分析CZT探测器对快脉冲X射线响应曲线下降沿衰减规律,并分析该衰减常数与电压、灵敏面积之间的关系。结果表明:10 mm×10 mm×2 mm与5 mm×5 mm×2 mm单晶CZT探测器对纳秒级脉冲X射线时间响应曲线下降沿均遵循单指数衰减规律,衰减常数为10~(-8)s数量级。随着电压升高,不同灵敏面积CZT探测器响应曲线衰减常数的差值降低。该结论可为揭示贯穿辐射条件下CZT晶体内部载流子输运规律提供依据。 相似文献
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《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》1998,142(4):592-598
The efficiency of TLD-700 thermoluminescent detectors is studied for various ions as a function of energy. A new model for calculation of efficiency has been developed, based on the detector response to reference radiation, and the radial dose distribution of heavy ions only. No free parameters have to be used to calculate the thermoluminescence detector (TLD) efficiency as a function of ion species and energy. Comparison between model calculations and experimental results will be presented. 相似文献
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T. D. M. Weijers J. A. Davies R. G. Elliman T. R. Ophel H. Timmers 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2002,190(1-4):387-392
The response of silicon detectors has been measured for He, O, S, Cl, Br, Ag and Pb ions in the energy range 1–2 MeV/amu. Following deliberate, long exposures of the detector, a transient effect was observed for 140 MeV Br ions, in which the pulse height decreased with increasing ion dose and then partially recovered within an hour of the final exposure. Using brief, consecutive exposures, the effective energy for creating a detectable electron–hole pair was determined using the pulse height difference method. The energy deposited by ions in the ‘dead-layer' at the detector surface and energy loss via non-ionizing events was taken into account. For ions with atomic numbers 2Z17 and energies above the Bragg peak, the effective energy was found to decrease linearly with increasing electronic stopping power at first, and then to level off at 3.52 eV/electron–hole pair. For intermediate mass ions (17<Z40), at energies close to the Bragg peak, increases slightly (2%) with increasing stopping power. For the heaviest ions studied (Z40), whose energies are below the Bragg peak of the stopping power curve, increases strongly (10–20%), even though the electronic stopping power is approximately constant. 相似文献
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Le Hong Khiem Tran Dinh TrongNguyen Tran Tho 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2011,269(19):2145-2149
A new empirical formula for quick estimation of range in beryllium material of charged particles with the charge number from 2 to 103 and with energy in the range from 2.5 to 500 MeV/nucleon has been given. This formula was found based on a table of ranges measured experimentally and calculated up to 1990. It is shown that the differences between the values calculated by our formula and the values tabulated in the table is less than about 2% for all ions in the whole energy range. 相似文献