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日盲单光子紫外探测器的发展 总被引:4,自引:4,他引:0
对于诸如高超音速飞行器的早期探测和预警、以及在日盲紫外波段的应用等非常微弱信号的探测来说,可以光子计数的单光子探测器特别令人感兴趣.雪崩光电二极管( APD)具有高速度、高灵敏度和光学增益大等优点.AlGaN合金易于通过改变摩尔组分来选择截止波长.对于在日盲波段实现单光子灵敏度而言,AlGaN APD是最有希望的半导体器件技术.通过对近年来的国内外相关文献资料的归纳分析,介绍了日盲AlGaN探测器的概念,比较了高超音速飞行器的红外与日盲紫外辐射特征,介绍了基于盖革模式与线性模式APD的日盲紫外单光子探测器的发展动态. 相似文献
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AlGaN是一种宽带半导体材料,随着材料中Al含量的不同,其禁带宽度有所不同,可以实现从3.4~6.2 eV.基于外光电效应原理,用AlGaN制成的光阴极因Al含量的不同,其长波阈值也有所不同.本文对5条AlGaN光阴极光谱曲线,采用数值计算的方法,从背景噪声、有效信号、光谱信噪比等方面进行对比分析,并通过以上参数对日盲紫外探测器特性进行评价.经研究发现,可以通过光谱响应曲线对探测器日盲特性进行评价.光谱信噪比越好,则日盲探测器性能越好.这为用户提供了一种评价探测器日盲特性的方法. 相似文献
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氧化镓的禁带宽度接近5 eV,是一种极具前景的日盲紫外探测半导体材料。基于碳热还原法生长高质量β-Ga2O3微米带制备出MSM(Metal-Semiconductor-Metal)结构光电导紫外探测器,研究了不同的结构对光电器件性能的影响。结果表明等间距叉指电极光电探测器相较于两端电阻型光电探测器有更优异的性能。在10 V/254 nm紫外光照下,其响应度、外部量子效率、比探测率和光响应时间等性能提高明显,其中光电流(Iphoto)有接近2个数量级的提升,且-2 V附近光暗电流比值增大至2.29×105。随着叉指电极间距从50μm缩减至20μm,器件Iphoto变大,其物理机制归因于阳极附近的耗尽层占据电极间微米带的比例增大引发了更高的光生载流子输运效率。 相似文献
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以日盲紫外光通信系统多采用激光器或汞灯作为光源、紫外光电二极管作为探测器,整体系统体积大、操作复杂,难以满足电子通信工程的实验教学需求,因此急需建立一种新型光通信创新实验教学平台。文中设计并构建了一套新型紧凑化日盲紫外光通信系统,其采用紫外LED作为光源、可见光PIN管为探测器,以下转换荧光玻璃为光谱转换器,实现了远距离、高灵敏度的日盲紫外光信号传输与探测。该系统不仅增大了输出信号的幅值,还将最大日盲紫外探测光电流提高到了23.3 μA。通过实践教学,发现该创新实验平台对提高学生综合能力和对日盲紫外光通信实验仪器设备的理解与高效率使用,发挥了重要的促进作用。 相似文献
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宽禁带半导体日盲紫外探测器研究进展 总被引:4,自引:0,他引:4
全固态日盲型紫外探测器具有体积小、功耗小和虚警率低等优点,在机载导弹预警方面具有广阔的应用前景。宽禁带半导体是这类探测器的首选材料,通过调节材料组分可以使响应波段落在日盲区。本文着重介绍以导弹预警为目的的宽禁带半导体紫外探测器的研究进展和前沿动态,分析了AlGaN、MgZnO等不同材料在制备和性能方面的优势和不足,并讨论了半导体日盲紫外探测器的发展方向。 相似文献
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Haoran Long Hao Liu Xiaoyu Wang Bowen Wang Ruixue Bai Yali Yu Kaiyao Xin Liyuan Liu Yingqiang Xu Jing Zhang Fagang Jiang Xinghua Wang Zhongming Wei Juehan Yang 《Advanced functional materials》2023,33(49):2306241
Facing the future development trend of miniaturization and intelligence of electronic devices, solar-blind photodetectors based on ultrawide-bandgap 2D semiconductors have the advantages of low dark current, and high signal-to-noise ratio, as well as the features of micro-nanometer miniaturization and multi-functionalization of 2D material devices, which have potential applications in the photoelectric sensor part of high-performance machine vision systems. This study reports a 2D oxide semiconductor, AsSbO3, with an ultrawide bandgap (4.997 eV for monolayer and 4.4 eV for multilayer) to be used to fabricate highly selective solar-blind UV photodetectors, of which the dark current as low as 100 fA and rejection ratio of UV-C and UV-A reaches 7.6 × 103. Under 239 nm incident light, the responsivity is 105 mA W−1 and the detectivity is 7.58 × 1012 Jones. Owing to the remarkable anisotropic crystal structure, AsSbO3 also shows significant linear dichroism and nonlinear optical properties. Finally, a simple machine vision system is simulated by combining the real-time imaging function in solar-blind UV with a convolutional neural network. This study enriches the material system of ultrawide-bandgap 2D semiconductors and provides insight into the future development of high-performance solar-blind UV optoelectronic devices. 相似文献
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紫外无线通信是一种新型通信方式,为实现紫外无线通信系统关键光器件选型的目的,依据日盲紫外光的传播特性,合理搭建系统结构,对系统结构中需要的光器件采用工作原理、特性分析对比等方法,实现了该系统紫外光源、紫外探测器及紫外滤波片三种关键光器件的合理选择。日盲紫外光器件的选型为紫外无线通信系统整体实现提供了依据。 相似文献
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在"日盲段"240~290 nm进行窄波段探测,具有背景干扰小的优势。相比于传统紫外探测器必须协同窄带滤光片工作,AlGaN具有固有窄波段控制和无需制冷两大优点。介绍了基于日盲型AlGaN焦平面器件的紫外相机的软、硬件设计。紫外相机由紫外透射式光学系统,日盲型AlGaN器件,偏置电路及驱动电路,低噪声前放、数据处理及传输单元构成,核心器件AlGaN采用背照式PIN阵列通过铟柱倒焊于硅基电容反馈跨导放大器(CTIA)读出电路的结构。紫外相机的设计指标为:光学口径80 mm,焦距130 mm,像元尺寸50μm,瞬时视场0.4 mrad,总视场3°,积分时间可控,帧率最高可达100帧/s。经初步室内测试,效果良好,对发展日盲型面阵AlGaN应用平台做出了有意义的探索和研究。 相似文献
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Razeghi M. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2002,90(6):1006-1014
Recent advances in the research work on III-nitride semiconductors and Al/sub x/Ga/sub 1-x/N materials in particular has renewed the interest and led to significant progress in the development of ultraviolet (UV) photodetectors able to detect light in the mid- and near-UV spectral region (/spl lambda//spl sim/200-400 nm). There have been a growing number of applications which require the use of such sensors and, in many of these, it is important to be able to sense UV light without detecting infrared or visible light, especially from the Sun, in order to minimize the chances of false detection or high background. The research work on short-wavelength UV detectors has, therefore, been recently focused on realizing short-wavelength "solar-blind" detectors which, by definition, are insensitive to photons with wavelengths longer than /spl sim/285 nm. In this paper the development of Al/sub x/Ga/sub 1-x/N-based solar-blind UV detectors will be reviewed. The technological issues pertaining to material synthesis and device fabrication will be discussed. The current state-of-the-art and future prospects for these detectors will be reviewed and discussed. 相似文献
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采用分子束外延(MBE)方法在Al2O3(0001)基片上生长了β-Ga2O3薄膜,利用XRD、SEM和AFM对薄膜的结构和形貌特性进行了表征。制作了基于β-Ga2O3薄膜的金属-半导体-金属(MSM)结构紫外探测器并对其进行了电学特性测试,结果表明:在20 V偏压下,器件的暗电流为8 nA;在波长为254 nm、光照强度为13×10–6W/cm2的紫外光照射下,器件的光电流为624 nA;器件的光电流与暗电流比值为78,光响应度达360 A/W,表现出明显的日盲紫外光响应特性。 相似文献
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p-i-n结构GaN光电探测器性能的研究 总被引:4,自引:1,他引:3
近年来,可见盲与太阳盲光电探测器在火灾监控、太空通信和导弹尾焰探测等方面的应用引起了越来越多的关注。由于氮化镓(GaN)是直接宽带隙半导体材料,所以成为了在可见区与紫外区的光电器件的首选材料,而p-i-n结构的器件因其响应度高、暗电流低、便于集成等优点倍受人们的青睐。采用金属有机气相外延(MOCVD)法制备了p-i-n结构的GaN紫外光电探测器。在此基础上,采用N2气氛下热退火处理的方法,提高了p型GaN层的载流子浓度,从而降低了器件的暗电流。器件在1 V偏压下,暗电流仅为65 pA。器件在1 V偏压下的最大响应度值出现在361 nm处,大小为0.92 A/W。 相似文献
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With recent developments of deep ultraviolet(DUV)light-emitting diodes and solar-blind detectors,UV communica-tion(UVC)shows great potential in replacing traditional wireless communication in more and more scenarios.Based on the at-mospheric scattering of UV radiation,UVC has gained considerable attention due to its non-line-of-sight ability,omnidirection-al communication links and low background noise.These advantages make UVC an ideal option for covert secure communica-tion,especially for military communication.In this review,we present the history and working principle of UVC with a special fo-cus on its light sources and detectors.Comprehensive comparison and application of its light sources and detectors are provided to the best of our knowledge.We further discuss the future application and outlook of UVC.Hopefully,this review will offer valuable insights into the future development of UVC. 相似文献
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采用金属有机气相外延(MOCVD)方法在(0001)面蓝宝石衬底上生长了AlN和高铝组分AlGaN材料。通过优化AlN和AlGaN材料的生长温度、生长压力和Ⅴ族元素/Ⅲ族元素物质的量比(nⅤ/Ⅲ)等工艺条件,得到了高质量的AlN和高铝组分AlGaN材料。AlN材料X射线双晶衍射ω(002)半宽为74 arcsec,透射光谱测试带边峰位于205 nm,带边陡峭;Al组分为45%的AlGaN材料X射线双晶衍射ω(002)半宽为223 arcsec,透射光谱测试带边峰位于272 nm,带边陡峭。采用此外延工艺方法生长了AlGaN基p-i-n型日盲紫外探测器材料并进行了器件工艺流片,研制出AlGaN基p-i-n型日盲紫外探测器,响应峰值波长为262 nm,在零偏压下的峰值响应度达到0.117 A/W。 相似文献