百瓦级全光纤双包层光子晶体光纤放大器

利用双包层掺镱光子晶体光纤(DC-PCF)作为增益光纤,设计制作了全光纤双包层光子晶体光纤放大器。实验制作了匹配DC-PCF的(6+1)×1端面抽运耦合器,6根抽运光纤采用包层直径、纤芯直径分别为105μm和125μm(数值孔径为0.22)的多模光纤,信号光纤采用普通单模光纤。利用套管法制作端面抽运耦合器,并将制作完成的耦合器与DC-PCF直接熔接,再对光子晶体光纤进行锥棒熔接,锥棒输出端面镀1000~1100nm的增透膜,以防止激光反馈对整个放大系统产生影响。对全光纤双包层光子晶体光纤放大器进行测试,使用976nm的抽运源提供能量,信号光使用波长为1064nm、功率为2 W的连续光。当抽运功率达到最大值151.83 W时,最大输出功率为108.1 W,斜率效率为72.7%。输出光斑为很好的基模光斑,体现了光子晶体光纤在具有大模场面积的同时仍能保持基模传输的优良特性。     

大面积三维光子晶体的制备与分析

采用中心带孔的多光楔棱镜产生多光束干涉图案 ,利用光诱导法在掺铁铌酸锂晶体中制作多种包括 光子准晶在内的大面积三维光子晶体。介绍了制作装置和实现方法,观测了两种光子晶体微 结构正面及侧 面结构特点,同时拍摄了光子晶体的布里渊区图。通过仿真计算定量分析光子晶体,详细分 析了三维结构 的周期性变化特点。提出通过改变光楔楔角角度实现对三维光子晶体周期的控制。利用布拉 格反射实验验证所做三维光子晶体的周期性,并测量了晶面间距。     

光子晶体光纤激光器功率与温度特性研究

通过实验的方法对掺Yb³⁺双包层光子晶体光 纤激光器的功率和温度特性进行了研究。利用长 度为8m的双包层光子晶体光纤(PCF),在双端泵浦源光功率为260 W时,获得213.4W的高功率单模连 续输出,光-光转换效率为82.1%;同时,由于激光器采用低吸收系 数光纤泵浦,光纤温度未出现明显的非 线性现象,且在最高输出功率时,光纤表面最高温度仅为32℃。该 报道进一步验证了低吸收率的双包层 光子晶体光纤的优良特性,若进一步优化耦合系统及增大泵浦激光器的泵浦功率,该光纤有 望获得更好的性能。     

空芯光子晶体光纤纤芯中的功率分数及其带隙特性

增大光场与气体的作用范围是提高光子晶体光纤(PCF)气体传感灵敏度的主要途径之一。首先,利用多极方法模拟了空芯光子晶体光纤中的功率分数随波长的变化关系,研究发现带隙型光子晶体光纤纤芯中光功率分数随波长变化是不连续的,其最大值可达90%,最小值不到5%。纤芯中光功率分数随波长的分布还与光子晶体光纤包层的空气填充率有关。其次,通过平面波展开方法计算了相应光子晶体光纤周期性包层所导致的光子带隙,研究发现纤芯中的功率分数与光子晶体光纤周期性包层光子带隙的特征有着密切的联系。只要被检测气体的特征波段落入空芯光子晶体光纤的光子带隙中,纤芯中的光功率分数就会远大于实芯光子晶体光纤倏逝波吸收传感时气孔中的功率分数。     

39fs,16W全光子晶体光纤飞秒激光系统

实验研究了高平均功率输出的光子晶体光纤飞秒激光系统。系统中振荡器和放大器均使用保偏型掺Yb3 双包层大模场面积光子晶体光纤(LMA-PCF)为增益介质,具有极低非线性系数、很高的增益系数,并能保证很好的环境稳定性。系统研究了种子光功率、脉冲宽度、脉冲啁啾和放大器抽运光功率等参数对系统输出飞秒激光脉冲宽度的影响。在输入种子光平均功率为180mW,放大器抽运功率为40W时,获得平均功率16W输出(对应单脉冲能量320nJ),脉冲宽度压缩到39fs。     

光子晶体发光二极管的研究进展

光子晶体是上世纪80年代未提出的一种新型功能材料,它独特的性能可以大大提高发光二极管的光提取效率,使其拥有更广阔的应用前景.概述了光子晶体的特性,阐述了光子晶体发光二极管的基本原理,介绍了几种光子晶体发光二极管器件.     

中科院大力开展光学材料和器件的研究

国内在光子晶体的理论研究方面已开展了大量的工作并取得了很好的成果。虽然实验方面的研究起步较晚，但发展迅速，为研制光子晶体基的光电子器件打下了基础。中科院重点开展光子晶体天线、光子晶体激光器、光子晶体光放大器、光子晶体波导、光子晶体光开关、光子晶体波长转换器、光子晶体路由器、超高效率发光二极管等新一代纳米光电子器件的研究。     

LD环形侧面抽运晶体吸收能量分布特性研究

针对激光晶体不同的表面处理方式,建立了多个半导体激光器阵列同时抽运激光晶体时吸收抽运光功率分布的数学模型,采用光线追迹的方法计算了半导体激光器环形侧面抽运高功率固体激光器中激光晶体对抽运光的吸收分布情况。重点根据不同表面处理方式的激光晶体对抽运光的吸收情况,分析了晶体表面处理对抑制ASE效应和获得高效率激光输出的影响。结果表明,晶体表面散射率的提高,能够有效地抑制ASE效应的产生,但同时会降低抽运光与激光输出的模式匹配程度,降低激光器的效率。     

基于慢光效应的解波分复用器的设计与研究

为了设计一种基于正方晶格光子晶体波导的三端口解波分复用器,利用光子晶体的光子带隙特性和光在光子晶体慢光波导中的传输特性,并采用平面波展开法及时域有限差分法对解波分复用器的特性进行了理论分析,数值计算了解复用器的空间和光谱分布特性。结果表明,调整波导中与波导紧邻的第1排柱子的位置,使三部分波导中传输的慢光频率发生改变,通过合理的结构设计,利用慢光模式传输的特点将不同频率的光从不同的输出端输出,可实现解复用的目的。     

基于光子晶体光纤的超连续谱光源设计

为了运用光子晶体光纤高非线性效应技术获得超宽光谱,设计了一种基于光子晶体光纤的超连续谱光源,通过对光子晶体光纤进行塌孔处理后再熔接的方式,将高峰值功率的窄线宽脉冲光注入高非线性光子晶体光纤,利用光纤非线性效应实现了光谱展宽.实验结果表明,该超连续谱光源实现了光谱范围440～2400 nm,输出光功率为276 mW.     

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling.The embedded photonic crystal(PC) lattice type,multi-layer embedded PC,distance between the multiple quantum well and the embedded PC are studied.It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs.The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC.Also,we ...     

利用常规工艺提高光子晶体GaN LED的出光效率

计算了GaN二维光子晶体的能带结构,并利用常规工艺在国内首次制备出了GaN基二维平板结构的光子晶体蓝光LED。经过器件测试表明,与没有制作光子晶体的器件相比,光子晶体使器件的有效出光效率达到了原来的1.5倍以上。另外,还对感应耦合等离子体刻蚀(ICP)的制备光子晶体LED的刻蚀工艺进行了分析。     

利用光子晶体提高InP基LED出光效率

应用FDTD方法计算了二维无限大光子晶体的能带结构,并制备出了InP基二维平板结构的光子晶体器件.在制备过程中尝试了仅用PMMA做掩模以及PMMA和SiO2做掩模两种方法.结果表明,不使用SiO2做掩模的情况下,由于PMMA胶选择性较差,在刻蚀过程中难以保证图形的准确转移.而增加SiO2掩模后,获得了图形质量良好的光子晶体结构.成功实现了利用光子晶体结构增强LED的出光效率,与未制作光子晶体结构的LED相比,光子晶体结构LED的出光效率可在原来基础上提高1倍以上.并且随着晶格常数的增加,出光效率进一步提高.     

Analysis of Improved Efficiency of InGaN Light‐Emitting Diode With Bottom Photonic Crystal Fabricated by Anodized Aluminum Oxidxe

The improved performance of a bottom photonic crystal (PC) light‐emitting diode (LED) is analyzed based on internal quantum efficiency (η_int) and light‐extraction efficiency (η_ex). The bottom PC is fabricated by anodized aluminum oxide nanopatterns and InGaN quantum wells (QWs) are grown over it. Transmission electron microscopy images reveal that threading dislocations are blocked at the nanometer‐sized air holes, resulting in improved optical emission efficiency of the QWs. From temperature‐dependent photoluminescence measurements, the enhancement of η_int is estimated to be 12%. Moreover, the enhancement of η_ex is simulated to be 7% by the finite‐difference time‐domain method. The fabricated bottom PC LED shows a 23% higher optical power than a reference, which is close to the summation of enhancements in η_int and η_ex. Therefore, the bottom PC improves LED performance through higher optical quality of QWs as well as increased light extraction.     

Cavities of crystal light [photonic crystal microcavities]

This paper presents the characteristics of photonic crystal microcavity light sources. Microcavities with dimensions on the scale of the wavelength of light are being extensively investigated due to their ability to exhibit enhanced spontaneous emission, directional output, and single-mode operation. Photonic crystals, which are the optical analog of semiconductors in electronic devices, are capable of controlling the properties of light by confining photons in one, two, or three dimensions. The technology to fabricate photonic crystals at the optical-wavelength scale (i.e., feature sizes at the submicron scale) has only very recently been achieved. Single or multiple defects in the photonic crystals act as microcavities with dimensions on the order of the wavelength of light and have emerged as the preferred way to obtain defect-free optical microcavities. The authors have been investigating electrically injected photonic crystal microcavities, and these devices are described in this paper. Electrically injected microcavities offer the advantage of possible integration with current optoelectronic circuits and devices. Also, arrays of such devices can be fabricated when electrically controlled. Electrically injected photonic crystal microcavity light sources may also realize high-efficiency single-mode LEDs.     

Double‐Inverse‐Opal Photonic Crystals: The Route to Photonic Bandgap Switching

Photonic crystals with a complete bandgap can stop the propagation of light of a certain frequency in all directions. We introduce double‐inverse‐opal photonic crystals (DIOPCs) as a new kind of optical switch. In the DIOPC, a movable, weakly scattering sphere is embedded within each pore of the inverse‐opal photonic crystal lattice. Switching between a diffusive reflector and a photonic crystal environment is experimentally demonstrated. Theory shows that a complete bandgap can be realized that can be opened or closed by moving the spheres. This functionality opens up new possibilities for the control of light emission and propagation. The close link and interaction between the chemical synthesis and the computational design and analysis underlines the interdisciplinary focus of this report.     

光子晶体结构优化对提高LED光提取效率研究

为了提高GaAsInP发光二极管的发光提取效率,在本文中,将其电流扩展层上生长光子晶体刻蚀深度作为损失的重要因素,并作为一个测试案例,分析波导在板中蚀刻的三个不同的气孔形状作为损失的关键因素,并且计算这些损耗以便在这种结构中达到更高的效率。并通过利用PhC板中的有效折射率建模和研究它们的传输来证明PhC在LED表征中的能力。最后,结果表明,仿真结果与实验数据吻合良好,有限元建模中的大量传输表明,它可以提高超过10%的光提取效率,提高了LED的效率。     

Porous alumina nano-membranes: Soft replica molding for large area UV-nanoimprint lithography

High-density ordered arrays of h-PDMS nanopillars were fabricated using an anodic aluminium oxide (AAO) template. The pore diameter and the interpore distance of the replica h-PDMS molding are well consistent with that of AAO template. The inverse h-PDMS has the surface characteristic of hydrophobic and surface energy of 130°. Hexagonally arranged array can be obtained by UV-nanoimprint lithography using our proposed h-PDMS mold, and their morphologies can be transferred truly. Besides, the h-PDMS mold has been used to fabricate photonic crystal structure on GaN by nanoimprint process, which could be found an application in the light output of GaN LED.     

One-Dimensional Photonic Crystal Rib Waveguides

We analyze an optical waveguide that consists of a 1D photonic crystal (PC) embedded in a large cross-sectional rib waveguide. The PC provides control over the dispersion properties of the waveguide, while the rib geometry provides a low loss and versatile mechanism for confining light. The structure is analyzed using the 3D finite-difference time-domain method. The simulation results indicate that extremely low-loss waveguiding is possible over a defect band. Moreover, the PC has a complete 1D photonic band gap with a gap-midgap ratio (Deltaomega/omega_mid) of 0.913, which is one of the largest ratios ever reported for a PC.