有机双层薄膜器件界面限制传导温度特性研究

通过对器件的温度特性的研究,能够使器件在合适的温度下保持稳定的工作状态.本文以Miller-Abrahams跳跃传导理论为基础,建立了有机-有机界面限制电流传导的电荷传输的解析模型.依据此模型分析了结构为"注入电极/有机层Ⅰ/有机层Ⅱ/收集电极"的双层薄膜器件在有机界面限制电流传导状态下的电流、电场和载流子分布与工作温度的变化关系.结果表明,在给定的工作电压下,温度升高时降落在层Ⅰ的电压升高,电场增强,而降落在层Ⅱ的电压降低,电场减弱,同时器件的电流增大.     

有机薄膜器件电流机制的研究

对于有机薄膜器件(包括有机电致发光器件(OLED)和有机场效应晶体管(OTFT)),器件的电流机制直接决定了器件的性能,因此深刻理解其相关机理是十分必要的.虽然对于有机薄膜器件的电学性能研究较早,但是由于器件结构及有机薄膜内部影响机制的复杂性使得不同学者的研究结果很不一致.为此,文章以相同的镁银合金(MgAg)为电极,...     

有机电致发光器件的热学特性分析

采用COMSOL有限元分析软件的固体传热模块,对有机电致发光器件（OLED）的热学特性进行了仿真,发现器件温度随着输入功率成线性增大。在驱动电流为150 mAcm-2时,仿真结果表明,Alq3发光层的最高温度为82.994 3℃;玻璃基板下表面的最高温是77.392 6℃;器件阴极表面中心区域的最高温度为82.994 2℃,其平均温度为78.445℃。通过改变功能层热传导率、功能层厚度、对流换热系数、表面发射率等参数模拟其对OLED器件热学特性的影响,结果表明,当增加基板的热传导率时,OLED器件温度显著下降而且表面及内部温度梯度大幅减小;提高空气对流换热系数及基板的表面发射率,OLED的温度可以大幅减小。而其他参数则对其影响并不明显。     

一种有机薄膜器件的制备及电存储特性

研究了一种金属/有机物/金属夹层结构有机薄膜器件的可逆电双稳特性.器件的阳极和阴极分别为真空热蒸发沉积的Ag和Al薄膜,中间介质层为真空热蒸发沉积的2-(hexahydropyrimidin-2-ylidene)-malononitrile(HPYM)有机薄膜.器件起始状态为非导通态,在大气环境下,可用正、反向电场进行信号的写入和擦除,表现为极性记忆特性.通过自然氧化的方法在底电极Al表面形成一层Al2O3薄膜层后,可使器件在不同的正向电压脉冲作用下达到不同的导电态,具有一定的多重态存储特性.同时,研究了不同的电极组合对器件电性能的影响,并通过紫外-可见吸收光谱以及喇曼光谱对器件界面进行表征.     

一种有机薄膜器件的制备及电存储特性

研究了一种金属/有机物/金属夹层结构有机薄膜器件的可逆电双稳特性.器件的阳极和阴极分别为真空热蒸发沉积的Ag和Al薄膜,中间介质层为真空热蒸发沉积的2-(hexahydropyrimidin-2-ylidene)-malononitrile(HPYM)有机薄膜.器件起始状态为非导通态,在大气环境下,可用正、反向电场进行信号的写入和擦除,表现为极性记忆特性.通过自然氧化的方法在底电极Al表面形成一层Al2O3薄膜层后,可使器件在不同的正向电压脉冲作用下达到不同的导电态,具有一定的多重态存储特性.同时,研究了不同的电极组合对器件电性能的影响,并通过紫外-可见吸收光谱以及喇曼光谱对器件界面进行表征.     

单层有机电致发光器件的电流传导机制的数值拟合分析

采用真空蒸镀的方法制备了以八羟基喹啉铝(Alq₃)为功能层的单层同质结有机电致发光器件,器件结构为indium-tin-oxide(ITO)/tris-(8-hydroxylquinoline)-aluminum(Alq₃)(x nm)/Mg:Ag.通过改变有机功能层的厚度,采用陷阱电荷限制电流(TCLC)理论对器件电流的数值拟合方法具体地研究了不同薄膜厚度的有机半导体器件内部电流的传导机制,验证了实验结果和理论推导的一致性.结果表明,Alq₃层厚度较低的单层器件随外加电压增大,器件电流经历了从欧姆电导区、TCLC区到TCLC-空间电荷限制电流(SCLC)过渡区三个区域的变化;而对于Alq₃层厚度较高的单层器件,Alq₃层中的陷阱机构增多,导致电流－电压曲线的SCLC区域消失.     

薄膜内应力与温度特性的研究

本文论述了薄膜应力快速测量系统中测温系统的设计原理及数据的处理方法，倒置了簿膜内应力与温度变化的关系曲线，从而计算出簿膜的热膨胀系数和复合弹性模量。     

锑化铟光伏器件温度特性分析

锑化铟光伏器件一般工作在７７Ｋ。本文介绍采用金属变温杜瓦瓶在不同温度下测试了锑化铟光伏器件的光电特性，其结果显示出锑化铟光伏器件在高于７７Ｋ一段温度范围内也能满足工作需要，因此为锑化铟制冷探测器的设计提供了一定的依据。     

NPB/Alq3双层有机电致发光器件薄膜厚度与器件性能的优化

研究了以NPB为空穴传输层、Alq₃为发光层的双层异质结有机电致发光器件的薄膜厚度对器件性能的影响.制备了一系列具有不同NPB和Alq₃厚度的器件并测试了其电致发光特性.结果表明,器件电流随Alq₃与NPB厚度变化的关系并不相同.不同有机层厚度双层器件的电流机制符合陷阱电荷限制(TCL)理论,随外加电压的增大,器件电流经历了欧姆电导区、TCL电流区、陷阱电荷限制-空间电荷限制(TCL-SCL)过渡区三个区域的变化.当有机层厚度匹配为NPB(20nm)/Alq₃(50nm)时可以获得性能优良的器件.器件的流明效率-电压关系曲线的变化规律是在低电压区较快达到最大值,然后随电压的增加逐渐降低.     

有机层界面对有机电致发光器件性能的影响

采用真空蒸镀的方法,制备了以ITO/2T-NATA(15 nm)/NPB(25 nm)/Alq3(30nm)/LiF(1 nm)/Al(100 nm)为基本结构的绿光器件,实验中在NPB(25 nm)与Alq3(30 nm)有机层界面处加入周期性不同的NPB(10 nm)/Alq3(10 nm)结构的有机层.通过实验测得的数据,研究了周期性的空穴传输层与发光层结合这种特殊结构对绿光器件发光性能的影响.根据实验结果,发现在有机层界面处,加入周期不同的NPB(10 nm)/Alq3(10 nm)层虽然会提高器件的起亮电压,但会改善器件的发光效率,而对器件的发光波长与发光区域以及发光亮度影响不大.     

载流子传输材料对双层器件电致发光特性影响

以新的稀土红色荧光络合物－－Eu(TTA)m复合体系作为发光层,用不同载流子传输材料充当电子传输层做成双层器件,研究了双层器件的电致发光特性。对于空穴传输材料,高场下器件的电流表现为体内电阻限制;而对于电子传输材料,咖啡 件的电流表现为电极限制。从光谱的变化,可明显看出电场对复合区域的影响。     

Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current

Characterized back interface traps of SOI devices by the Recombination-Generation (R-G) curren: has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSiS-ISE. The basis of the principle for the R-G current's characterizing the back interface traps of SOI lateral p+p-n+ diode has been demonstrated. The dependence of R-G cur rent on interface trap characteristics has been examined, such as the state density, surface recombination velocity and the trap energy level. The R-G current proves to be an effective tool for monitoring the back interface of SOI devices.     

Characterization of Interface Strength as Function of Temperature and Moisture Conditions

Since Moisture Sensitivity Level (MSL) tests are part of the international reliability qualification standards, all the microelectronics components/products have to pass these specifications. Therefore, it is important to be able to efficiently and accurately characterize and predict the moisture related material and interface behavior in the real manufacturing, processing, testing and application conditions. The success of interfacial fracture mechanics approach to analyze moisture-induced failures in IC packaging strongly depend on accurate characterization of the critical adhesion strength, Gc. However, its measurement is complicated by the fact that adhesion depends not only on moisture concentration, C, but also temperature, T, and mode mixity, ψ. This paper described our research to develop a reliable methodology for interface toughness evaluation as function of temperature, humidity and mode mixity. Our methodology includes using the four-point bending test and shaft-loaded-blister method. Dedicated specimens consisting of various types of moulding compounds bonded onto leadframe are manufactured. Besides temperature, moisture content and mode mixity effects, also the influences of surface treatment (leadframe oxidation and contamination) and production process on the interface fracture toughness are evaluated. Multi-physics-based numerical methods are used to transfer the experimental critical loads to an interface strength parameter. These analysis covers mechanical, moisture diffusion, vapor pressure, hygro-swelling and CTE-mismatch modeling. To test and improve the methodology, various effects are evaluated, such as crack-length dependency, material properties, specimen- width, displacement-rate of the upper support/shaft, etc. The results of the proposed methodology indicate, as expected, a change in interface toughness by mode mixity, moisture content and temperature. It is found that Gc decreases with increasing moisture content and temperature. The presence of moisture at the given interface is observed as the important factor in the reduction of interfacial strength (>>20 %～45%). Furthermore, Gc increases by a factor 3～4 when the mode mixity shifts towards mode II.     

Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current

Characterized back interface traps of SOI devices by the Recombination\|Generation (R\|G) current has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSIS\|ISE.The basis of the principle for the R\|G current's characterizing the back interface traps of SOI lateral p\++p\+-n\++ diode has been demonstrated.The dependence of R\|G current on interface trap characteristics has been examined,such as the state density,surface recombination velocity and the trap energy level.The R\|G current proves to be an effective tool for monitoring the back interface of SOI devices.     

话音接口话路特性分析

常用的话音接口为二线和四线。话路特性包括点电平、频率特性、电平特性、路际串话、空闲噪声、总失真、回波衰耗和对地平衡度8种话路特性,每种话路特性都有规定的指标,指标偏差后对话音质量产生一定的影响。测试话路特性时应参照相应的标准按测试框图连线。市场上有许多话路特性测试仪,给出了选择测试仪时应注意的事项和2种测试仪的参数。话音特性和电路板的设计密切相关,话音接口板在设计阶段应该注意元器件布局、地线和滤波电容等问题。     

Adaptable Interface Circuits for Flexible Monitoring of Temperature and Movement

This paper describes the development of two small dataacquisition chips with on board interface circuits for a miniaturisedcapacitive accelerometer, as well as for a set of thermistors.They are intended for use in biomedical, implantable telemetryapplication, requiring low power and small size for the entiresystem. Beside the typical aspects of circuit design, emphasisis also put on the overall system design, to pinpoint to thetypical constraints of the application. This leads to one ofits most important features: the flexible specifications, allowinga user-defined setting of the monitoring windows, after the deviceis manufactured. In the paper this concept is explained, andan example of a hard-wired system and a software controlled systemare given.     

有机电致发光器件中复合发光的电场和温度关系

通过分析有机电致发光器件中载流子注入、输运、激子的解离与复合过程，提出了激子解离与复合的理论模型。基于电流连续性方程和Poisson方程，给出了激子复合几率、电流密度及复合效率表达式。研究了外加电压和温度对器件中激子的复合几率及在各种接触条件下外加电压对器件电流和复合效率的影响。结果表明：(1)在一个较宽的注入势垒范围内，复合几率随电场和温度的升高而降低；(2)固定阴极势垒，而阳极势垒由小变大时，器件电流由接触限制向空间电荷限制转变；(3)复合效率随外加电压升高先增加，当电压达一临界值时而陡降，并存在一个最佳的注入势垒值。其计算值与所报道的实验结果相符合。