共查询到20条相似文献,搜索用时 15 毫秒
1.
N.M. Jeutter M. Hennemeyer R. Stark A. Stierle W. Moritz 《Materials Science in Semiconductor Processing》2006,9(6):1079
The growth of Pr2O3 layers on Si(1 1 1) has been studied by X-ray diffraction, Low-energy electron diffraction (LEED) and atomic force microscopy (AFM). Pr2O3 starts to grow as a 0.6-nm thick layer corresponding to one unit cell of the hexagonal phase (1 ML). The X-ray results indicate that layers thicker than 0.6 nm do not grow with the hexagonal phase. Growth takes place at a sample temperature of 500–550 °C. Annealing of the monolayer in UHV at a temperature above 700 °C leads to the formation of Pr2O3 and PrSi2 islands. Silicide islands are found only at annealing in UHV and do not occur at annealing in oxygen atmosphere of 10−8 mbar. The LEED pattern after heating to 730 °C shows a (2×2) and (√3×√3) superstructure and after heating to 1000 °C a (1×5) superstructure occurs. The superstructures seen in the LEED pattern arise from silicide structures in the area between the islands. The silicide remains on the surface and cannot be removed with flashing to 1100 °C. Further deposition of Pr2O3 on the surface covered with silicide phases does not lead to growth of ordered layers. 相似文献
2.
Jie Wang Hui-zhao Zhuang Bao-li Li Jun-lin Li 《Materials Science in Semiconductor Processing》2010,13(3):205-208
Single-crystalline GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniation of Ga2O3/Nb films at 900 °C in a quartz tube. The as-synthesized GaN nanowires are confirmed to be single-crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and field-emission transmission electron microscopy (FETEM); scanning electron microscopy (SEM) shows that the GaN nanowires are smooth, with diameters of about 50 nm and lengths typically up to several microns, which could provide an attractive potential for incorporation in future GaN electronic devices into Si-based large-scale integrated circuits. Finally, the growth mechanism of GaN nanowires is also briefly discussed. 相似文献
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4.
Maw-Shung Lee Sean Wu Shih-Bin Jhong Kuan-Ting Liu Ruyen Ro Chia-Chi Shih Zhi-Xun Lin Kang-I Chen Shou-Chang Cheng 《Microelectronics Reliability》2010,50(12):1984-1987
(1 0 3) Oriented AlN films is an attractive piezoelectric material for the applications on surface acoustic wave (SAW) and film bulk acoustic wave (FBAR) devices. As regards the SAW properties of the (1 0 3) oriented AlN films, the electromechanical coupling constant (K2) is larger than the (0 0 2) oriented AlN films. As regards the bulk acoustic wave (BAW) properties of (1 0 3) oriented AlN films, it can excite a quasi-shear mode (velocity = 5957 m/s, K2 = 3.8%) that can be used for FBAR liquid sensor. In this research, the (1 0 3) oriented AlN films were successfully prepared on the silicon substrate by rf magnetron sputtering. Different temperatures (100 °C, 200 °C, 300 °C, and 400 °C) were used in this experiment process. The crystalline structure of films was determined by X-ray diffraction (XRD) and the surface microstructure was investigated by the atomic force microscope (AFM). The result exhibited the optimal substrate temperature is 300 °C. The optimal (1 0 3) oriented AlN films have the strongest XRD intensity, the smallest full width at half maximum (FWHM) value (0.6°), the largest grain size (15.8 nm) and the smoothest surface (Ra = 3.259 nm). 相似文献
5.
E. T. Croke R. J. Hauenstein C. W. Nieh T. C. McGill 《Journal of Electronic Materials》1989,18(6):757-761
A study of the growth parameters governing the nucleation of metastable superconducting A15 V3Si on Si and A12O3 is presented. Nominally, 500Å films of V1-xSix were produced through codeposition of V and Si onto heated (111) Si and (1102) A12O3 substrates. Samples were prepared in a custom-built ultrahigh vacuum (UHV) chamber containing dual e-beam evaporation sources and a high temperature substrate heater. V and Si fluxes were adjusted to result in the desired average film composition. V0.75Si0.25 films prepared at temperatures in excess of 550° C on Si show significant reaction with the substrate and are nonsuperconducting while similar films grown on A12O3 exhibit superconducting transition temperatures(@#@ Tc @#@) approaching bulk values for V3Si (16.6-17.1 K). Codeposition at temperatures between 350 and 550° C results in superconducting films on Si substrates while growth at lower temperatures results in nonsuperconducting films. Lowering the growth temperature to 400° C has been shown throughex situ transmission electron microscopy (TEM) and Auger compositional profiling to minimize the reaction with the Si substrate while still activating the surface migration processes needed to nucleate A15 V3Si. Variation of film composition aboutx = 0.25 is shown to result in nonsuperconducting films for highx and superconducting films with Tc approaching the bulk V value (5.4 K) for lowx. Finally, lowering the V0.75Si0.25 deposition rate is shown to raise Tc. 相似文献
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7.
P.K.J. Wong T.L.A. Tran P. Brinks W.G. van der Wiel M. Huijben M.P. de Jong 《Organic Electronics》2013,14(2):451-456
Hybrid interfaces between ferromagnetic surfaces and carbon-based molecules play an important role in organic spintronics. The fabrication of devices with well defined interfaces remains challenging, however, hampering microscopic understanding of their operation mechanisms. We have studied the crystallinity and molecular ordering of C60 films on epitaxial Fe/MgO(0 0 1) surfaces, using X-ray diffraction and scanning tunneling microscopy (STM). Both techniques confirm that fcc molecular C60 films with a (1 1 1)-texture can be fabricated on epitaxial bcc-Fe(0 0 1) surfaces at elevated growth temperatures (100–130 °C). STM measurements show that C60 monolayers deposited at 130 °C are highly ordered, exhibiting quasi-hexagonal arrangements on the Fe(0 0 1) surface oriented along the [1 0 0] and [0 1 0] directions. The mismatch between the surface lattice of the monolayer and the bulk fcc C60 lattice prevents epitaxial overgrowth of multilayers. 相似文献
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G. Congedo S. Spiga L. Lamagna A. Lamperti Yu. Lebedinskii Yu. Matveyev A. Zenkevich P. Chernykh M. Fanciulli 《Microelectronic Engineering》2009,86(7-9):1696-1699
Amorphous lanthanum aluminate thin films were deposited by atomic layer deposition on Si(1 0 0) using La(iPrCp)3, Al(CH3)3 and O3 species. The effects of post-deposition rapid thermal annealing on the physical and electrical properties of the films were investigated. High-temperature annealing at 900 °C in N2 atmosphere leads to the formation of amorphous La-aluminosilicate due to Si diffusion from the substrate. The annealed oxide exhibits a uniform composition through the film thickness, a large band gap of 7.0 ± 0.1 eV, and relatively high dielectric constant (κ) of 18 ± 1. 相似文献
10.
采用分子束外延(MBE)生长方法,使用γ-Al2O3材料作为新型过渡层,在Si(∞1)衬底上获得了没有裂纹的GaN外延层,实验结果表明使用γ-Al2O3过渡层有效地缓解了外延层中的应力.通过生长并测试分析几种不同结构的外延材料,研究了复合衬底γ-Al2O3/Si(001)生长GaN情况,得到了六方相GaN单晶材料,实现了GaN c面生长.预铺薄层Al及高温AlN层可以提高GaN晶体质量,低温AlN缓冲层可以改善GaN表面的粗糙度.为解决Si(001)衬底上GaN的生长问题提供了有益的探索. 相似文献
11.
采用分子束外延(MBE)生长方法,使用γ-Al2O3材料作为新型过渡层,在Si(∞1)衬底上获得了没有裂纹的GaN外延层,实验结果表明使用γ-Al2O3过渡层有效地缓解了外延层中的应力.通过生长并测试分析几种不同结构的外延材料,研究了复合衬底γ-Al2O3/Si(001)生长GaN情况,得到了六方相GaN单晶材料,实现了GaN c面生长.预铺薄层Al及高温AlN层可以提高GaN晶体质量,低温AlN缓冲层可以改善GaN表面的粗糙度.为解决Si(001)衬底上GaN的生长问题提供了有益的探索. 相似文献
12.
R. V. Kuz’menko A. V. Ganzha O. V. Bochurova É. P. Domashevskaya J. Schreiber S. Hildebrandt S. Mo E. Peiner A. Schlachetzki 《Semiconductors》2000,34(1):73-80
In the temperature range T=10–300 K, photoreflectance spectroscopy was used to study the temperature dependence of residual stress in epitaxial n-GaAs films (1–5 μm thick, electron concentration of 1016–1017 cm−3) grown on Si(100) substrates. A qualitative analysis showed that the photoreflectance spectra measured in the energy region
of the E
0 transition in GaAs had two components. They consisted of the electromodulation component caused by the valence subband |3/2;
±1/2〉-conduction band transition and the low-energy excitonic component. The magnitude of stress was determined from the value
of the strain-induced energy shift of the fundamental transition from the subband |3/2; ±1/2〉 with respect to the band gap
of the unstressed material E
0(T)-E
0
|3/2; ±1/2〉
(T). The increase in the energy shift E
0-E
0
|3/2; ±1/2〉
from 22 ± 3 meV at 296 K to 29 ± 3 meV at 10 K, which was found in the experiments, gives evidence of an increase in biaxial
stress with decreasing temperature.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 73–80.
Original Russian Text Copyright ? 2000 by Kuz’menko, Ganzha, Bochurova, Domashevskaya, Schreiber, Hildebrandt, Mo, Peiner,
Schlachetzki. 相似文献
13.
《Microelectronic Engineering》2007,84(9-10):2247-2250
Thin high-quality calcium fluorite films are grown on (1 1 1) silicon in the low- and middle- temperature molecular-beam epitaxy processes followed by annealing. Metal-insulator-semiconductor structures with such films exhibit much smaller leakage currents than the casual structures with silicon dioxide. They demonstrate also satisfactory wear-out characteristics. Low leakage is achieved not due to high permittivity, but due to restricted tunnel transparency of the fluorite owing to a large effective mass of carriers. Therefore, CaF2 is a promising candidate for gate material in advanced field-effect transistors. 相似文献
14.
G. Hema Chandra C. Udayakumar N. Padhy S. Uthanna 《Materials Science in Semiconductor Processing》2010,13(4):288-294
CuIn0.75Al0.25Se2 thin films prepared onto glass substrates at TS=573 K were single phase, nearly stoichiometric and polycrystalline with a strong (1 1 1) preferred orientation showing sphalerite structure. The results of X-ray diffraction and electron diffraction studies are compared, interpreted and correlated with micro-Raman spectra. The optical absorption studies indicated a direct band gap of 1.16 eV with high absorption coefficient (>104 cm?1) near the fundamental absorption edge. 相似文献
15.
Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one-dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy,which is in agreement with the experiments. 相似文献
17.
Simulation of Nano Si and Al Wires Growth on Si(1O0) Surface 总被引:1,自引:0,他引:1
Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one-dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy,which is in agreement with the experiments. 相似文献
18.
C. Merckling G. Delhaye M. El-Kazzi S. Gaillard Y. Rozier L. Rapenne B. Chenevier O. Marty G. Saint-Girons M. Gendry Y. Robach G. Hollinger 《Microelectronics Reliability》2007,47(4-5):540
In this work, the potentiality of molecular beam epitaxy techniques to prepare epitaxial lanthanum aluminate (LaAlO3) films on Si(0 0 1) is explored. We first demonstrate that the direct growth of LaAlO3 on Si(0 0 1) is impossible : amorphous layers are obtained at temperatures below 600 °C whereas crystalline layers can be grown at higher temperatures but interfacial reactions leading to silicate formation occur. An interface engineering strategy is then developed to avoid these reactions. SrO and SrTiO3 have been studied as buffer for the subsequent growth of LaAlO3. Only partial LaAlO3 epitaxy is obtained on SrO whereas high quality layers are achieved on SrTiO3. However both SrO and SrTiO3 appear to be unstable with respect of Si at the growth temperature of LaAlO3 (700 °C). This leads to the formation of relatively thick amorphous interfacial layers. Despite their instability at high temperature, these processes could be used for the fabrication of twins-free LaAlO3 templates on Si, and for the fabrication of complex oxide/Si heterostructures for various applications. 相似文献
19.
《Materials Science in Semiconductor Processing》2000,3(4):285-290
The diffusion of arsenic implanted into silicon at low ion energies (2.5 keV) has been studied with medium-energy ion scattering, secondary ion mass spectrometry and four-point probe measurements. The dopant redistribution together with the corresponding damage recovery and electrical activation produced by high-temperature (550–975°C) rapid thermal anneals has been investigated for a range of substrate temperatures (+25, +300 and −120°C) during implant. Initial results show an implant temperature dependence of the damage structure and arsenic lattice position prior to anneal. Solid-phase epitaxial regrowth was observed following 550°C, 10 s anneals for all implant temperatures and resulted in approximately 60% of the implanted arsenic moving to substitutional positions. Annealing at 875°C resulted in similar arsenic redistribution for all implant temperatures. Following annealing at 925°C, transient-enhanced diffusion was observed in all samples with more rapid diffusion in the +25°C samples than either the −120 or +300°C implants, which had similar dopant profiles. In the 975°C anneal range, similar rates of implant redistribution were observed for the +300 and +25°C implants, while diffusion in the −120°C sample was reduced. These observations are discussed qualitatively in terms of the nature and density of the complex defects existing in the as-implanted samples. 相似文献
20.
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μm?) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μm?) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits. 相似文献