The UV-nanoimprint lithography equipment with multi-head imprinting unit for sub-50 nm half-pitch patterns

Nanoimprinting lithography (NIL) is a promising technology to produce sub-50 nm half-pitch features on silicon- and/or quartz-based substrates. It is well-known as the next generation lithography. Especially, the UV-nanoimprint lithography technology has advantages of the simple process, low cost, high replication fidelity and relatively high throughput. In this paper, chip-size multi-head imprinting unit with compliance stage and overlay/alignment system with moiré and dual grating unit are proposed in order to fabricate sub-50 nm half-pitch patterns. These systems are set-up and performed in single-step nanoimprinting tool (ANT-4) which has several functional units for nanoimprinting process. Using the UV-NIL tool, 50 nm, 70 nm and 100 nm half-pitch dot and line patterns are obtained. Also, 20 nm overlay/alignment accuracy is obtained by means of the proposed method.     

Fabrication of hp 32 nm resist patterns using near-field lithography

Near-field lithography (NFL) has no fundamental limit such as the diffraction limit of light. However, in order to fabricate resist patterns with hp 32 nm, thorough optimization of various processes are indispensable. Previously, we reported on the use of fine and ultra-thin top-layer resist, and designs and fabrication of our special masks. In this paper, the effect of the total resist thickness on the near-field distribution is analyzed by the finite-difference time domain analyses and compared with our experiments. For the fabrication of hp 32 nm patterns, the total resist thickness as well as the tri-layer resist process are accordingly optimized. By the near-field exposure using an i-line mercury lamp and the dry-etching process for thin top-layer photo-resist, we have successfully fabricated the hp 32 nm resist pattern of 120 nm height.     

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

An atomistic model for self-interstitial extended defects is presented in this work. The model is able to predict a wide variety of experimental results by using a limited set of assumptions about the shape and emission frequency of extended defects, and taking as parameters the interstitial binding energies of extended defects versus their size. The model accounts for the whole extended defect evolution, from the initial small irregular clusters to the {3 1 1} defects and to the more stable dislocation loops. It predicts the extended defect dissolution, supersaturation and defect size evolution with time, and it takes into account the thermally activated transformation of {3 1 1} defects into dislocation loops. Moreover, the model is also used to explore a two-phase exponential decay observed in the dissolution of {3 1 1} defects.     

New challenges for 300 mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

A new alignment technique is proposed for wafer level 3D interconnects fabrication: the SmartView^®. This original procedure is using alignment keys located in the bonding interface and enables an alignment precision of 1 μm. The method uses two top–bottom microscope pairs for observing the alignment keys and a minimal Z-axis travel during wafer alignment procedure. After the alignment procedure, the wafers are secured for subsequent wafer bonding procedures. The alignment process is presented in detail, as well as the integration of such an equipment in high production systems able to run wafers up to 300 mm diameter.     

A versatile pattern inversion process based on thermal and soft UV nanoimprint lithography techniques

Si master molds are generally patterned by electron-beam lithography (EBL) that is known to be a time-consuming nanopatterning technique. Thus, developing mold duplication process based on high throughput technique such as nanoimprint lithography can be helpful in reducing its fabrication time and cost. Moreover, it could be of interest to get inverted patterns (holes instead of pillars) without changing the master EBL process. In this paper, we propose a two step process based on thermal nanoimprint lithography (T-NIL) (step 1) and soft UV assisted nanoimprint lithography (UV-NIL) (step 2) to invert a master EBL mold. After the two inversion steps, the grand-daughter Si mold exhibits the same pattern polarity as the EBL mold. For step 1, pattern transfer using ion beam etching (IBE) of a thin metallic underlayer is the critical step for dimension control due to the low NXR1020 resistance. For step 2, the optimized reactive ion etching (RIE) step allows transfer with good anisotropy even for nanostructures at the 50 nm-scale. For structures larger than 100 nm, this inversion process has been successfully applied to large field replication (up to 1.5 cm²) on whole wafer.     

Fabrication of nano-sized resist patterns on flexible plastic film using thermal curing nano-imprint lithography

Due to polymer’s excellent flexibility, transparency, reliability and light weight, it is a good candidate material for substrate of devices including organic electronic devices, biomedical devices, and flexible displays (LCD and OLED). In order to build such devices on polymer, nano- to micron-sized patterning must be accomplished. Since polymer materials reacts with organic solvents or developer solutions which are inevitably used in photolithography and cannot bear high temperature (∼140 °C) process for photoresist baking, conventional photolithography cannot be used to polymer substrate. In this research, monomer based thermal curing imprinting lithography was used to make as small as 100 nm dense line and space patterns on flexible PET (polyethylene-terephthalate) film. Compared to hot embossing lithography, monomer based thermal curing imprint lithography uses monomer based imprint resin which consists of base monomer and thermal initiator. Since it is liquid phase at room temperature and polymerization can be initiated at 85 °C, which is much lower than glass temperature of polymer resin, the pattern transfer can be done at much lower temperature and pressure. Hence, patterns as small as 100 nm were successfully fabricated on flexible PET film substrate by monomer based thermal curing imprinting lithography at 85 °C and 5 atm without any noticeable degradation of PET substrate.     

Patterning capability of new molecular resist in EUV lithography

We designed and synthesized a new partially-protected polyphenol, 25X-MBSA-M, for which the position and number of protected hydroxyl groups have no dispersion, and evaluated the EUV patterning performance of a chemically amplified positive-tone resist based on it. EUV imaging experiments were performed using the high-numerical-aperture (NA = 0.3), small-field EUV exposure tool (HINA) at ASET and coherent illumination (σ = 0.0). Patterning results showed the resolution of the resist to be 28 nm at an EUV exposure dose of 12.2 mJ/cm², the obtainable aspect ratio to be as high as 2, and the line-edge roughness (LER) to be small, with 3σ being 3.6 nm for 45-nm line-and-space patterns and an inspection length, L, of 2000 nm. In addition, pattern collapse was markedly suppressed.     

Carbon-related defects in microelectronics

In the present study electrically active carbon and hydrogen-related (CH) defects, which can act as strong recombination centers in high power devices and CMOS photodetectors, are investigated in n-type Si. Several different CH-related defects are observed by using the deep level transient spectroscopy (DLTS) technique on hydrogenated Si samples with different oxygen content. The concentration of these defects is determined as low as 10¹²–10¹³ cm^− 3. By comparing samples with different O, C, and H concentrations the origin of the CH-related defects is derived. We show that the concentration of the electrically inactive substitutional C can be estimated by a comparison of the depth profiles of the electrically active CH-related defects in a sample with those in a reference sample which has an identical oxygen and known carbon content. This approach is applicable even for concentrations of substitutional C lower than 10¹⁵ cm^− 3.     

Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in2 storage

The possibility of forming very fine pits or dots with a bit pitch (BP) and a track pitch (TP) of 25 nm was investigated using a conventional electron-beam (EB) writing system and positive and negative EB resists ZEP520 and calixarene, respectively. In our experiments, we obtained very small dots with a diameter of around 13 nm, and ultrahigh-density dot arrays with a BP and a TP of 25 nm using calixarene resist. Calixarene resist is very suitable for the formation of ultrahigh-packed dot array patterns, and promises to open the way toward 1 trillion bits/in² storage. We believe that calixarene is more suitable for ultrahigh-density pattern formation than ZEP520 because of its exposure intensity distribution function and its resist structure.     

Synthesis and characterization of TiO2-doped Polyaniline nanocomposites by chemical oxidation method

Polyaniline (PANI)/TiO₂ nanocomposite samples with various dopant percentages of TiO₂ were synthesized at room temperature using a chemical oxidative method. The samples were characterized by ultraviolet-visible spectrometer, Fourier transform infrared (FTIR) spectrometer, X-ray diffraction (XRD), scanning electron microscopy (SEM), EDAX and conductivity measurements. Incorporation of TiO₂ nanoparticles caused a slight red shift at 310 nm in the absorption spectra due to the interactions between the conjugated polymer chains and TiO₂ nanoparticles with π–π^? transition. FTIR confirmed the presence of TiO₂ in the molecular structure. In PANI/TiO₂ composites, two additional bands at 1623 cm^?1 and 1105 cm^?1 assigned to Ti–O and Ti–O^–C stretching modes were present. It can be concluded that Ti organic compounds are formed with an alignment structure of TiO₂ particles. XRD patterns revealed that, as the TiO₂ percentage was increased, the amorphous nature disappeared and the composites became more strongly oriented along the (1 1 0) direction, which showed the tetragonal structure of nanocrystalline TiO₂. SEM studies revealed the formation of uniform granular morphology with average grain size of 200 nm for (50%) PANI/TiO₂ nanocomposite samples.     

Atomic precision patterning on Si: An opportunity for a digitized process

H depassivation lithography is a process by which a monolayer of H absorbed on a Si(1 0 0) 2 × 1 surface may be patterned by the removal of H atoms using a scanning tunneling microscope. This process can achieve atomic resolution where individual atoms are targeted and removed. This paper suggests that such a patterning process can be carried out as a digital process, where the pixels of the pattern are the individual H atoms. The goal is digital fabrication rather than digital information processing. The margins for the read and write operators appear to be sufficient for a digital process, and the tolerance for physical addressing of the atoms is technologically feasible. A digital fabrication process would enjoy some of the same advantages of digital computation; namely high reliability, error checking and correction, and the creation of complex systems.     

Study on critical dimension of printable phase defects using an EUV microscope

We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si glass substrates. A clear EUVM image of a 300-nm-wide pattern on a 6025 glass mask was obtained. The resolution was estimated to be 50 nm or less from this pattern. Programmed phase defects on the glass substrate were also used for inspection. The EUV microscope was able to resolve a programmed pit defect with a width of 40 nm and a depth of 10 nm and also one with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Thus, in this study, one critical dimension of a pit defect was estimated to be a depth of 2 nm.     

A surface profile reconstruction system using sinusoidal phase-modulating interferometry and fiber-optic fringe projection

A fiber-optic sinusoidal phase modulating (SPM) interferometer for surface profile reconstruction is presented. Sinusoidal phase modulation is created by modulating the drive voltage of the piezoelectric transducer. The surface profile is constructed basing on fringe projection. Fringe patterns are vulnerable to external disturbances such as temperature fluctuation and mechanical vibration, which cause phase drift and decrease measuring accuracy. We build a closed-loop feedback phase compensation system, the bias value of external disturbances superimposed on fringe patterns can be reduced to about 50 mrad, and the phase stability for interference fringes is less than 5.76 mrad. By measuring the surface profile of a paper plate for two times, the repeatability is estimated to be about 11 nm, and is equivalent to be about λ/69. For a plane with 100 × 100 points, a single measurement takes less than 140 ms, and the feasibility for real-time profile measurement with high accuracy has been verified.     

Projection lithography to print thick resist patterns with triangular and semi-circular cross-section profiles

Patterning technology to print thick resist patterns with triangular and semi-circular cross-section profiles was investigated for applying to fabrication of light-guide plates and lens arrays, surface texturization of solar cells, and others. Positive novolac resist PMER P-LA900PM with an initial thickness of 10 μm was used and the patterns were mainly printed by the exposure light with a wavelength of 405 nm. At this wavelength, the light transmittance through the resist film was 0.5% and 80% before and after the exposure, respectively. Caused by this moderate transmittance characteristics, pattern sidewalls suitably inclined or roundly curved. When 400 μm line-and-space reticle patterns were printed using a projection exposure lens with a reduction ratio of 1/19 and a numerical aperture of 0.125, triangular patterns were obtained under the defocus conditions of around ?100 μm. The sidewall angle was widely controlled between 20° and 55° by mainly changing the exposure time. On the other hand, semi-circular profiles were obtained when patterns were printed at the defocus position of +100–200 μm. It was clarified that the circular radius depended only on the defocus position and did not depend on the exposure time. Patterns with circular radiuses of 9–34 μm were successfully obtained.     

Design,fabrication and measurement of triple band frequency reconfigurable antennas for portable wireless communications

In this paper two triple-band monopole antennas are proposed for portable wireless applications such as WiFi, WiMAX and WLAN. Two different geometrical structures are used for the radiating elements of these antennas, each printed on a low cost FR-4 substrate. Truncated metallic copper ground is used to attain optimum radiation pattern and better radiation efficiency. The frequency of the antennas is reconfigured using a lumped-element switch. The proposed antennas covers three frequency bands 2.45, 3.50 and 5.20 GHz depending upon the switching conditions. Both antennas works with an optimum gain (1.7–3.4 dB), bandwidth (6–35%), VSWR (<1.5) and radiation efficiency (85–90%). Due to its affordable size (1.6 × 35 × 53 mm³), the antennas can be used in modern and portable communication devices such as laptops, iPads and mobile phones. The prototype of the antennas are fabricated and the measurements and simulations are found in close agreement.     

Template replication for full wafer imprint lithography

Typically, the Step and Flash Imprint Lithography (S-FIL^TM) process uses field-to-field drop dispensing of UV-curable liquids for step-and-repeat patterning. Several applications, including patterned magnetic media, photonic crystals, and wire grid polarizers, are better served by a process that allows high-throughput, full-wafer patterning of sub-100 nm structures with modest alignment. Full-wafer imprinting requires a full-wafer template; however, creation of a wafer-scale imprint template with sub-100 nm structures is not feasible with direct-writing approaches. This paper describes a practical methodology for creating wafer-scale templates suitable for full-wafer imprinting of sub-100 nm structures.The wafer-scale template is replicated from a smaller area master template using the S-FIL step-and-repeat process. The pattern is repeated to accommodate the wafer substrate targeted for a particular application. The tone of the master template is maintained by employing an SFIL/R^TM (reverse tone) pattern transfer process. To create the replicate template, the patterns are imprinted onto a fused silica wafer that has been coated with chromium and an organic transfer layer. A silicon-containing resist, Silspin^TM, is spun on to planarize the organic monomer material. Following an etch back of the Silspin, the monomer and transfer layer are patterned using the Silspin as a hard mask. The Silspin and monomer stack then serves as a masking layer for the chromium and fused silica etches. The remaining monomer and chromium are then removed to create a conformal replicate template.     

Fabrication of high efficiency and color stable white organic light-emitting diodes by an alignment free mask patterning

Small molecule based white organic light-emitting diodes were fabricated by using an alignment free mask patterning method. A phosphorescent red/green emitting layer was patterned by a metal mask without any alignment and a blue phosphorescent emitting layer was commonly deposited on the patterned red/green emitting layer. A white emission could be obtained due to separate emission of red/green and blue emitting layers. A maximum current efficiency of 30.7 cd/A and a current efficiency of 26.0 cd/A at 1000 cd/m² were obtained with a color coordinate of (0.39, 0.45). In addition, there was little change of emission spectrum according to luminance because of balanced red/green and blue emissions.     

Investigation of deep level defects in copper irradiated bipolar junction transistor

Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu¹¹⁺-ions with fluence of the order 10¹² ions cm^?2, is studied for radiation induced gain degradation and deep level defects. I–V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from E_C ? 0.164 eV to E_C ? 0.695 eV are observed in the base–collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from E_V + 0.203 eV to E_V + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.     

The electronic band alignment on nanoscopically patterned substrates

The electronic level alignment of the organic semiconductor para-sexiphenyl on a nanoscopically patterned substrate was investigated with ultraviolet photoemission spectroscopy, work function measurements and scanning tunnelling microscopy. The results show that for increasing coverage on inhomogeneous surfaces, shifts in electronic level alignment occur, which are due to the change from local to average band alignment. The Cu(1 1 0)–(2 × 1)O stripe phase, used as a model substrate consists of alternating stripes of bare and oxygen passivated copper, with stripe widths of ∼35 Å comparable to the sexiphenyl molecular length. In the first molecular layer the electronic bands are clearly aligned to the local surface potential of the specific stripe, resulting in the superposition of two photoemission spectra offset by 1 eV. Beyond two monolayers the valence band spectra clearly indicate a single electronic level alignment, which is determined by the average interface dipole.     

Process control for 32 nm imprint masks using variable shape beam pattern generators

Step and Flash Imprint Lithography (S-FIL^®) is a unique method that has been designed from the beginning to enable precise overlay for creating multi-level devices. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates (imprint masks).For device manufacturing, one of the major technical challenges remains the fabrication of full-field 1X templates with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub-32 nm node. Here we report the critical dimension (CD) uniformity and process latitude of dense 32 nm patterns from templates written with variable shape beam pattern generators. Uniformity on the template and in the imprinted field was 3.22 and 3.45 nm, 3σ. Process latitude during the writing of the template was improved by increasing both feature bias and exposure dose. As an example, the slopes for the 36 and 32 nm features are approximately 0.30 and 0.25 nm/μC/cm², respectively, indicating a substantial process window for exposure dose.