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1.
《Microelectronics Reliability》2014,54(12):2911-2921
Low cycle fatigue performance of ball grid array (BGA) structure Cu/Sn–3.0Ag–0.5Cu/Cu joints with different standoff heights (h, varying from 100 to 500 μm) and two pad diameters (d, d = 320 and 480 μm) under displacement-controlled cyclic loading was studied by experimental method and finite element (FE) simulation. A prediction method based on the plastic strain energy density and continuum damage mechanics (CDM) framework was proposed to evaluate the initiation and propagation of fatigue crack in solder joints. The results show that fatigue failure of solder joints is a process of damage accumulation and the plastic strain energy density performs a power function correlation with the cycle numbers of crack initiation and propagation. Crack propagation rate is affected by the stress triaxiality, which is dependent on the loading mode and increases dramatically with decreasing h under tensile loading, while the change of standoff height has very limited influence on the stress triaxiality under shear loading mode. Moreover, crack growth correlation constants identified in Cu/Sn–3.0Ag–0.5Cu/Cu joints with a specific geometry (h = 100 μm and d = 480 μm) can be well used to predict the fatigue life of BGA joints with other geometries. Furthermore, the results have also shown that the fatigue life of solder joints increases with decreasing the geometric ratio of h/d under the same nominal shear strain amplitude, while it drops with decreasing h/d under the same shear displacement amplitude in cyclic loading. When the geometric ratio (i.e., h/d ratio) is unchanged, the miniaturization of BGA joints brings about a decrease in fatigue life of the joints.  相似文献   

2.
Solder joint integrity has long been recognized as a key issue affecting the reliability of integrated circuit packages. In this study, both experimental and finite element simulation methods were used to characterize the mechanical performance and fracture behavior of micro-scale ball grid array (BGA) structure Cu/Sn–3.0Ag–0.5Cu/Cu solder joints with different standoff heights (h, varying from 500 to 100 μm) and constant pad diameter (d, d = 480 μm) and contact angle under shear loading. With decreasing h (or the ratio of h/d), results show that the stiffness of BGA solder joints clearly increases with decreasing coefficient of stress state and torque. The stress triaxiality reflects the mechanical constraint effect on the mechanical strength of the solder joints and it is dependent on the loading mode and increases dramatically with decreasing h under tensile loading, while the change of h has very limited influence on the stress triaxiality under shear loading. Moreover, when h is decreased, the concentration of stress and plastic strain energy along the interface of solder and pad decreases, and the fracture location of BGA solder joints changes from near the interface to the middle of the solder. Both geometry and microstructure greatly affect the shear behavior of joints, the average shear strength shows a parabolic trend with decreasing standoff height. Furthermore, the brittle fracture of BGA solder joints after long-time isothermal aging was investigated. Results obtained show that, under the same shear force, the stress intensity factors, KI and KII, and the strain energy release rate, GI, at the Sn–3.0Ag–0.5Cu/Cu6Sn5 interface and in the Cu6Sn5 layer obviously decrease with decreasing h, hence brittle fracture is more prone to occur in the joint with a large standoff height.  相似文献   

3.
The electroless nickel immersion gold (ENIG) process results in surface defects, such as pinholes and black pads, which weaken the solder joint and eventually degrade the reliability of the PCB. Contamination of the plating solutions, including dissolution of the solder resist (SR), can be a cause of the pinholes and black pads. This study examined the effects of SR dissolution on the solder joint reliability and electroless Ni plating properties. Electroless Ni plating was performed by adding 1 to 10 ppm hardener (melamine) to the fresh Ni solution. Many black pads were observed in the 7 and 10 ppm hardener-added surfaces. In addition, the content of P was highest when 7 and 10 ppm hardener was added. The ball shear tests were carried out to confirm the joint reliability between the ENIG surface with hardener-added and the Sn-3.0Ag-0.5Cu solder (SAC 305). The ball shear strength decreased with increasing dissolution of the hardener. In particular, the shear strength was the lowest at 7 and 10 ppm hardener addition. In addition, the failure mode of the solder joint was changed from ductile to brittle mode with increasing hardener addition. That is, as the hardener additive increases, intermetallic compound (IMC) phases were changed from (Cu,Ni)6Sn5 to (Cu,Ni)3Sn4 and Cu6Sn5 (brittle structure).  相似文献   

4.
The eutectic Sn–Ag–Cu solder is the most popular lead free solder. But reliability and cost issues limit its application. On the other hand, Sn–Ag–Zn system has many advantages comparing with Sn–Ag–Cu. In this paper, interfaces of Sn–xAg–1Zn/Cu and Sn–2Ag–xZn/Cu (x = 1, 2, 3), Sn–2Ag–2.5Zn/Cu and Sn–1.5Ag–2Zn/Cu solders joints were studied to understand effects of Ag and Zn contents. Results show that shearing strength of as-reflowed Sn–2Ag–2Zn/Cu and Sn–1.5Ag–2Zn/Cu joints is higher than other joints. Because of the strong Cu–Sn reaction and the formation of Ag3Sn, the Sn–Ag–Zn series solder joints are not suitable for use above 150 °C temperature. After 250 °C soldering for 4 h, while the Zn content increased from 1 wt% to 2 wt%, the interfacial IMC of Sn–Ag–Zn/Cu altered from Cu6Sn5 to Cu5Zn8. The Cu5Zn8 interface has higher shearing strength than Cu6Sn5 interface. Relationships among microstructure, strength and aging condition are discussed.  相似文献   

5.
In order to investigate the fracture behavior of Sn–3.0Ag–0.5Cu solder bump, solder balls with the diameter of 0.76 mm were soldered on Cu pad in this study, then high speed impact test and static shear test of solder bumps were carried out to measure the joint strength of the soldering interface. The effect of isothermal aging on joint strength as well as fracture behavior of solder bumps was investigated, and the composition of the fracture surface was identified by means of EPMA. The results indicate that the fracture is inside the bulk solder in low speed shear test regardless of the aging effect, thus the maximum load reflects the solder strength rather than the interfacial strength. It is also found that under 1 m/s impact loading, the crack initiation position is changed from solder/Cu6Sn5 interface to Cu3Sn/Cu interface after long time isothermal aging, and the fracture occurs inside the bulk solder accompanying with intermetallic compound in both of the as-soldered and aged joints. The thickened multiple IMC layers during isothermal aging account for the degraded impact resistance, and the change of the solder matrix is another factor for reduced impact resistance owing to Sn residue on the fracture surface.  相似文献   

6.
《Microelectronics Reliability》2014,54(11):2536-2541
While the Sn–Ag–Cu (SAC) family of solders are considered good candidate as lead-free solder replacement materials, their relatively short processing history and application result in a host of materials as well as reliability problems. For good metallurgical bonding and electrical connection, a thin, even layer of intermetallic compound (IMC) is required but excessive growth of the IMC layer will cause various reliability problems. This is especially critical for miniaturized solder pitches in very large scale integration circuits. This work adopts the composite approach of adding 0.15 and 0.30 wt.% of Pt into Sn–3.8Ag–0.7Cu alloy to study the effect of these additions to the IMC layer thickness between the solder and substrate. Alloys were isothermally aged at 150 °C for up to 1000 h to observe contribution of Pt in suppressing excessive IMC growth. It was found that when more Pt was added to the alloy, the IMC layer became more even and continuous. Voids and IMC layer thickness were reduced. This is attributed to the role of Pt in replacing Cu in the solder and thus impeding excessive diffusion.  相似文献   

7.
Next generation “More than Moore” integrated circuit (IC) technology will rely increasingly on the benefits attributable to advanced packaging (www.itrs.net [1]). In these increasingly heterogeneous systems, the individual semiconductor die is becoming much thinner (25 to 50 μm, typically) and multiple dies can be stacked upon each other. It is difficult to assess non-destructively, non-invasively and in situ the stress or warpage of the semiconductor die inside these chip packages and conventional approaches tend to monitor the warpage of the package rather than the die.This paper comprises an account of a relatively new technique, which we call B-Spline X-Ray Diffraction Imaging (B-XRDI) and its application, in this instance, to the non-destructive mapping of Si semiconductor die lattice misorientation inside wire bonded encapsulated Low-profile Fine-pitch Ball Grid Array (LFPGA) packages. B-XRDI is an x-ray diffraction imaging technique which allows the user to reconstruct from a series of section x-ray topographic images a full profile of the warpage of the silicon semiconductor die inside such a chip package. There is no requirement for pre-treatment or pre-processing of the chip package and we show that synchrotron-based B-XRDI mapping of wafer warpage can be achieved with angular tilt resolutions of the order of 50 μrad  0.003° in times as short as 9–180 s (worst case X–Y spatial resolution = 100 μm) for a full 8.7 mm × 8.7 mm semiconductor die inside the fully encapsulated LFBGA packages. We confirm the usefulness of the technique by correlating our data with conventional warpage measurements performed by mechanical and interferometric profilometry and finite element modelling (FEM). We suggest that future developments will lead to real-time, or near real-time, mapping of thermomechanical stresses during chip packaging processes, which can run from bare wafer through to a fully encapsulated chip package.  相似文献   

8.
This study examined the effects of isothermal aging and temperature–humidity (TH) treatment of substrate on the joint reliability of a Sn–3.0Ag–0.5Cu (wt.%)/organic solderability preservative (OSP)-finished Cu solder joint. Two types of OSP-finished chip-scale-package (CSP) substrates were used, those subjected and not subjected to the TH test. This study revealed an association between the interfacial reaction behaviors, void formation and mechanical reliability of the solder joint. Many voids were formed at the interface of the OSP-finished Cu joint subjected to the TH test. These voids were caused by the oxidation of the OSP-finished Cu substrate during the TH test. In the shear tests, the shear force of the joint with the substrate not subjected to the TH test was slightly higher than that with the TH test. The mechanical reliability of the solder joint was degraded by voids at the interface.  相似文献   

9.
The Zn–4Al–3Mg based solder alloy is a promising candidate to replace the conventional Pb–5Sn alloy in high-temperature electronic packaging. In this study, the tensile properties of Zn–4Al–3Mg–xSn alloys (x = 0, 6.8 and 13.2 wt.%) at high temperatures (e.g., 100 °C, and 200 °C) were investigated. It was found that the uniaxial tensile strength (UTS) of Zn–4Al–3Mg–xSn solder alloys all decrease monotonously with the increment of temperature. The elongation ratio at 100 °C is superior to that at room temperature whereas follows a significant drop at 200 °C. The microstructure observations show that a typical brittle fracture of Zn–4Al–3Mg alloy occurs at room temperature and 200 °C under normal tension, whereas a ductile fracture is found at 100 °C. The 6.8 wt.% Sn addition in Zn–4Al–3Mg alloy causes a dramatic decrease of yield strength, and a slight deterioration of the ductility.  相似文献   

10.
The combined effects on long-term reliability of isothermal aging and chemically balanced or unbalanced surface finish have been investigated for fine-pitch ball grid array packages with Sn–3.0Ag–0.5Cu (SAC305) (wt.%) and Sn–3.5Ag (SnAg) (wt.%) solder ball interconnects. Two different printed circuit board surface finishes were selected to compare the effects of chemically balanced and unbalanced structure interconnects with and without board-side Ni surface finish. NiAu/solder/Cu and NiAu/solder/NiAu interconnects were isothermally aged and thermally cycled to evaluate long-term thermal fatigue reliability. Weibull plots of the combined effects of each aging condition and each surface finish revealed lifetime for NiAu/SAC305/Cu was reduced by approximately 40% by aging at 150°C; less degradation was observed for NiAu/SAC305/NiAu. Further reduction of characteristic life-cycle number was observed for NiAu/SnAg/NiAu joints. Microstructure was studied, focusing on its evolution near the board and package-side interfaces. Different mechanisms of aging were apparent under the different joint configurations. Their effects on the fatigue life of solder joints are discussed.  相似文献   

11.
《Microelectronics Reliability》2014,54(9-10):2044-2047
Understanding the behavior of lead-free solder alloys within a high humidity environment is a serious topic in the deployment of products in various electronics applications. The work reported herein investigates this specific impact on Sn–1.0Ag–0.5Cu–0.5Fe solder alloy. Specimens were treated with 5% NaCl salt spray. All specimens showed strong resistance to corrosion. Microstructural deformations after the test were analyzed using Scanning Electron Microscopy/Energy Dispersive X-ray Spectroscopy (SEM/EDX). Concerns were at the localized corroded area, as this would cause significant degradation at the solder joints. The mechanisms leading to these disadvantageous results as well as the microstructural evolution and correlation with the intrinsic properties of the solder alloy are discussed.  相似文献   

12.
The creep properties of a Sn–Ag–Cu micro solder joint with a solder ball with 500 μm were investigated by a multi-temperature stress relaxation test performed using a specimen at three temperatures (298, 348, and 398 K). The stress exponents in Norton’s law were 8 at 398 K, 8.8 at 348 K, and 9 at 298 K, and the activation energies were found to be 39 kJ/mol in the high-stress region and 80 kJ/mol in the low-stress region. The stress exponent in Norton’s law for a micro solder joint was lower than that for a large-scale specimen, which resulted in more coarsened intermetallics in the microstructure than in the large-scale specimen. The activation energies for the micro solder joint were almost equal to those for the large-scale specimen in the high- and low-stress regions. These results reflect the microstructure of the micro solder joint, and the creep constitutive equation for the Sn–Ag–Cu joint could be derived by the multi-temperature stress relaxation test proposed in this study.  相似文献   

13.
Kirkendall voids (KVs) are known to be formed at the Cu/Cu3Sn interface, which can remarkably weaken solder joints. In this paper, the formation and evolution processes of KVs at Sn–3.5Ag/Cu joints were systematically investigated under isothermal aging and current stressing. It was found that the processes develop faster when joints are subjected to current stressing as opposed to thermal aging. This can be illuminated by the high KV densities caused by current stressing at both cathode and anode Cu/Cu3Sn interfaces. Moreover, KVs formed under current stressing showed some polarity characteristics, namely that higher KV density was observed on the anode side compared with the cathode side. The interfacial reaction generated at the Cu3Sn/Cu6Sn5 interface, which was partly affected by current stressing, contributed to this polarity effect. As the holding time was prolonged, microvoids coalesced into larger porosities and microcracks. These defects will greatly threaten the reliability of the interface.  相似文献   

14.
In the present study, the effect of Al2O3 nanoparticles on performances of Sn–58Bi solder were investigated in aspects of electro-migratio, shear strength and microhardness. The experimental results show that the Al2O3 nanoparticles significantly improved microstructure and mechanical performances of solder joints. With the addition of 0.5 wt% Al2O3, the intermetallic compounds (IMC) reduced from 2.5 μm to 1.27 μm after 288 aging hours at 85 °C. Furthermore, after electromigration test under a current density of 5 × 103 A/cm2 at 85 °C, Bi-rich layers formed at the anode side of both Al2O3 doped and plain solder. Moreover, the addition of Al2O3 nanoparticles reduced the mean thickness of Bi-rich layer. In addition, the growth rate of the IMC layer of Al2O3 doped solder decreased by 8% compared with the plain solder. Besides, the Al2O3 doped solder exhibited better performance than plain solder in microhardness after different aging times. While, the addition of Al2O3 significantly impeded the degradation of the shear strength of solder joint after aging for 48 and 288 h. Furthermore, it was worth noting that the fracture surface of doped solder showed a typical rough and ductile structure. However, plain solder exhibited a relatively smooth and fragile surface.  相似文献   

15.
This study investigated the mechanical and electrical properties of Ag–2Pd wire after thermal annealing. The thermal stability of the tested wire was examined by separately imposing static annealing at 275 °C, 325 °C and 375 °C in a vacuum environment. It was found that annealing the Ag–2Pd wire at 275 °C promoted the formation of a fully annealed structure with equiaxed grains. Annealing Ag–2Pd wire had a shorter heat affect zone (HAZ) length than those of conventional wire, and offered outstanding mechanical properties. A long-term electrical test found Ag3(Pd)Al and Ag2(Pd)Al compounds between the Ag–Pd ball and Al pad. These results confirmed the high-reliability properties of annealed Ag–2Pd wires for the wire bonding process.  相似文献   

16.
The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to E a ~ 0.054 eV.  相似文献   

17.
The microstructure, thermal property, and interfacial reaction with Cu substrate of Sn–8Zn–3Bi–xCu (= 0, 0.5, 1) lead-free solders were investigated in this work. Cu–Zn intermetallics formed in the solder matrix and the melting temperature increases slightly with Cu addition. After soldering at 250 °C for 90 s, a flat Cu5Zn8 layer and a scallop CuZn5 layer formed at the interfaces of all samples. The CuZn5 intermetallic compound (IMC) transformed to Cu5Zn8 IMC with longer reaction time due to the diffusion of Cu atoms from Cu substrate. The interfacial IMC layer grew thicker with the reaction time following a parabolic law which suggested the interfacial reactions were diffusion controlled. The calculation results show that the activation energy of IMC growth for Cu-containing solders is larger than that of Sn–8Zn–3Bi solder, which demonstrated that a small amount of Cu addition to the solder can effectively suppressed the growth of the interfacial IMC.  相似文献   

18.
Cu6Sn5 and Cu3Sn are common intermetallic compounds (IMCs) found in Sn–Ag–Cu (SAC) lead-free solder joints with OSP pad finish. People typically attributed the brittle failure to excessive growth of IMCs at the interface between the solder joint and the copper pad. However, the respective role of Cu6Sn5 and Cu3Sn played in the interfacial fracture still remains unclear. In the present study, various amounts of Ni were doped in the Sn–Cu based solder. The different effects of Ni concentration on the growth rate of (Cu, Ni)6Sn5/Cu6Sn5 and Cu3Sn were characterized and compared. The results of characterization were used to evaluate different growth rates of (Cu, Ni)6Sn5 and Cu3Sn under thermal aging. The thicknesses of (Cu, Ni)6Sn5/Cu6Sn5 and Cu3Sn after different thermal aging periods were measured. High speed ball pull/shear tests were also performed. The correlation between interfacial fracture strength and IMC layer thicknesses was established.  相似文献   

19.
The poor drop-shock resistance of near-eutectic Sn–Ag–Cu (SAC) solder interconnects drives the research and application low-Ag SAC solder alloys, especially for Sn–1.0Ag–0.5Cu (SAC105). In this work, by dynamic four-point bend testing, we investigate the drop impact reliability of SAC105 alloy ball grid array (BGA) interconnects with two different surface mounting methods: near-eutectic solder paste printing and flux dipping. The results indicate that the flux dipping method improves the interconnects failure strain by 44.7% over paste printing. Further mechanism studies show the fine interfacial intermetallic compounds (IMCs) at the printed circuit board side and a reduced Ag content inside solder bulk are the main beneficial factors overcoming other negative factors. The flux dipping SAC105 BGA solder joints possess fine Cu6Sn5 IMCs at the interface of solder/Cu pads, which increases the bonding strength between the solder/IMCs and the fracture resistance of the IMC grains themselves. Short soldering time of flux dipping joints above the solder alloy liquidus mitigates the growth of interfacial IMCs in size. In addition, a reduced Ag content in flux dipping joint bulk causes a low hardness and high compliance, thus increasing fracture resistance under higher-strain rate conditions.  相似文献   

20.
Growth of intermetallic compounds (IMC) at the interface of Sn–2.0Ag–2.5Zn solder joints with Cu, Ni, and Ni–W substrates have been investigated. For the Cu substrate, a Cu5Zn8 IMC layer with Ag3Sn particles on top was observed at the interface; this acted as a barrier layer preventing further growth of Cu–Sn IMC. For the Ni substrate, a thin Ni3Sn4 film was observed between the solder and the Ni layer; the thickness of the film increased slowly and steadily with aging. For the Ni–W substrate, a thin Ni3Sn4 film was observed between the solder and Ni–W layer. During the aging process a thin layer of the Ni–W substrate was transformed into a bright layer, and the thickness of bright layer increased with aging.  相似文献   

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