基于光纤信号传输的核电磁脉冲场探测仪的设计与实现

介绍了基于光纤信号传输的核电磁脉冲场探测仪的原理、设计研制及达到的技术性能指标。采用快速傅里叶变换技术,对核电磁脉冲信号进行频谱截断分析,确定核电磁脉冲测量所需的最小带宽,在此基础上设计了激光器电路、探测器电路。核电磁脉冲场探测仪的研制对核电磁脉冲场的防护技术研究提供了器材保障,对提高我国电子信息设备核电磁脉冲场的防护研究水平具有重要意义。     

Development of Impregnated Agglomerate Pelletization (IAP) process for fabrication of (Th,U)O2 mixed oxide pellets

Impregnated Agglomerate Pelletization (IAP) technique has been developed at Advanced Fuel Fabrication Facility (AFFF), BARC, Tarapur, for manufacturing (Th,²³³U)O₂ mixed oxide fuel pellets, which are remotely fabricated in hot cell or shielded glove box facilities to reduce man-rem problem associated with ²³²U daughter radionuclides. This technique is being investigated to fabricate the fuel for Indian Advanced Heavy Water Reactor (AHWR). In the IAP process, ThO₂ is converted to free flowing spheroids by powder extrusion route in an unshielded facility which are then coated with uranyl nitrate solution in a shielded facility. The dried coated agglomerate is finally compacted and then sintered in oxidizing/reducing atmosphere to obtain high density (Th,U)O₂ pellets. In this study, fabrication of (Th,U)O₂ mixed oxide pellets containing 3–5 wt.% UO₂ was carried out by IAP process. The pellets obtained were characterized using optical microscopy, XRD and alpha autoradiography. The results obtained were compared with the results for the pellets fabricated by other routes such as Coated Agglomerate Pelletization (CAP) and Powder Oxide Pelletization (POP) route.     

2020年中国核能发展战略研究

通过对中国核电发展面临形势的分析,强调了核电发展战略是我国电力发展战略和国家能源安全战略的重要组成部分,但加快核能发展面临诸多挑战。重点研究了核电发展的铀资源需求与资源供应保证能力、放射性废物处理处置等问题,以及中国核电发展面临的其他主要问题。阐述了2020年中国核能发展战略,并提出了有关措施建议。     

Effects of total-dose irradiation on gate-all-around (GAA) devices

The response of gate-all-around (GAA) MOS transistors to dose irradiation is quite different from that observed on other types of silicon-on-insulator (SOI) MOSFETs. In regular SOI MOSFETs, edge leakage increases substantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation. The GAA MOSFET behaves in the opposite way; the shift of edge threshold voltage upon creation of charges in the oxide is smaller than that of the main transistor. As a result, a kink develops in the subthreshold characteristics of regular SOI MOSFETs upon irradiation, while the original subthreshold kink of GAA devices disappears when the device is irradiated     

基于虚拟仪器的CMOS器件脉冲总剂量效应在线测试系统研制

从效应研究的角度出发,利用Labview软件,自行研制了基于PCI插卡式虚拟仪器的CMOS器件脉冲总剂量效应在线测试系统,详细介绍了其硬件结构和软件设计思想,利用该系统在"强光一号"辐射模拟装置上开展了试验验证,表明其原理和技术途径是可行的,基本掌握了开展CMOS器件脉冲总剂量损伤以及时间关联退火响应研究的关键测试技术.     

在束流输运网络中强流离子束的复杂性及其控制研究进展

讨论了在束流输运网络中强流离子束在国防与民用等许多方面极其重要的应用潜力和诱人的发展前景。指出在束流输运网络中强流离子束形成的束晕-混沌的复杂性已经成为强流离子束应用中的关键问题之一;必须深入研究这类束晕-混沌的复杂特性及其产生的物理机制,并实现对束晕-混沌的有效控制。考虑到这是一个特殊的复杂的时空混沌的控制问题,解决这一难题已经成为强流离子束涉及的高科技领域、非线性-复杂性科学及复杂网络交叉领域中极富挑战性的一个新课题。最后,对上述课题当前的最新进展进行了评论,指出了该课题今后的研究方向。     

Development of Migration Prediction System (MIGSTEM) for Cationic Species of Radionuclides through Soil Layers

The migration prediction system (MIGSTEM) has been developed for estimating the migration of cationic species of radionuclides through soil layers systematically. The MIGSTEM consists of the migration experiments, the one-dimensional fitting code (inverse analysis code) for determining retardation factor and dispersivity (migration factors) and the three-dimensional differential code (prediction code) for estimating the migration of the radionuclides. The migration experiments are carried out for obtaining the concentration profiles of the radionuclides in unsaturated and saturated soil layers. Using the inverse analysis code, the migration factors are obtained at one time by fitting the concentration profiles calculated to those observed. The prediction code can give the contours of concentration and the one-dimensional concentration profiles at selected time, as well as the changing in the concentration at a selected position with time. The validity of the MIGSTEM was obtained by the benchmark test on the pre diction and inverse analysis codes. The MIGSTEM was applied to estimate the migration of Sr²⁺ through the sandy soil.     

Development of an MCNP-tally based burnup code and validation through PWR benchmark exercises

The aim of this study is to evaluate the capabilities of a newly developed burnup code called BUCAL1. The code provides the full capabilities of the Monte Carlo code MCNP5, through the use of the MCNP tally information. BUCAL1 uses the fourth order Runge Kutta method with the predictor–corrector approach as the integration method to determine the fuel composition at a desired burnup step. Validation of BUCAL1 was done by code vs. code comparison. Results of two different kinds of codes are employed. The first one is CASMO-4, a deterministic multi-group two-dimensional transport code. The second kind is MCODE and MOCUP, a link MCNP–ORIGEN codes. These codes use different burnup algorithms to solve the depletion equations system. Eigenvalue and isotope concentrations were compared for two PWR uranium and thorium benchmark exercises at cold (300 K) and hot (900 K) conditions, respectively. The eigenvalue comparison between BUCAL1 and the aforementioned two kinds of codes shows a good prediction of the systems’ k-inf values during the entire burnup history, and the maximum difference is within 2%. The differences between the BUCAL1 isotope concentrations and the predictions of CASMO-4, MCODE and MOCUP are generally better, and only for a few sets of isotopes these differences exceed 10%.     

Performance and Upgrade of the DAFNE Beam Test Facility (BTF)

The DAFNE Beam Test Facility (BTF) at the Frascati National Laboratory of INFN (LNF) has been operational since October 2002. This facility provides electron and positron beams with tunable energy from 25 MeV to 750 MeV, while the intensity can be varied from$10^10/ pulse$@ 0–50 Hz down to a single particle. In the last two years many experiments and beam tests have been hosted, so that the large use of the facility pushed the DAFNE staff to upgrade both the beam line, in order to improve the duty cycle, limited by frequent beam injection in the DAFNE main rings, and the diagnostic devices. The beam characteristics, the user experience and their typical measurements, the diagnostic tools developed and the available equipment are presented. Finally, we report on the facility upgrade and on operation in the new configuration.     

Superpowerful Linear Proton Accelerators for Neutron Generators and Electoronuclear Setups (review of projects)

Suggestions for superpowerful linear accelerators for electronuclear setups and high-intensity neutron generators are reviewed. The most important technical solutions, the characteristic features, and the state of the projects for linear accelerators with average accelerated beam power from 1 to 100 MW are examined: APT, SNS, JAERI/KEK, TRISPAL, TRASCO, ESS, KOMAC, Energy Amplifier, IFMIF, joint proposal by the Institute of Theoretical and Experimental Physcis, the Moscow Radio Electronics Institute, the Institute for High-Energy Physics, and other nuclear centers. 8 figures, 3 tables, 74 references.     

基于离散纵标输运计算方法的三维燃耗程序发展研究

为了精确描述和分析具有强烈各向异性中子注量率空间分布的反应堆燃耗过程,本文实现了三维SN 输运计算与燃耗计算的耦合,发展了相应的三维输运燃耗耦合计算程序.该程序系统采用接口程序自动耦合三维SN输运计算程序和同位素燃耗计算程序的方法实现对三维中子学计算模型的精细燃耗计算,获得燃料同位素成分、燃耗反应性、中子注量率空间分布等参数随燃耗时间的变化量.采用IAEA 基准校核例题对程序系统进行了校核,计算结果初步证明了所开发的三维燃耗程序系统的正确性.     

Progress of Beijing Radioactive Ion Beam Facility Isotope Separator On-line(BRISOL)

正Many of the reactions fundamentally important in nuclear physics and astrophysics are inaccessible to experimental study using stable-beam/stable-target combinations and therefore can only     

Measurement of Elastic Scattering of Proton Drilrline Nuclear System ~(17) F+~(58)Ni at Near Barrier Energy

<正>The reaction mechanisms of proton-rich nuclear systems have been attracted great attention nowadays.In the present work,the elastic scattering of the proton drip-line nuclear system~(17)F+~(58)Ni were measured,to investigate the influence of the proton-valence structure.     

Measurement of One Proton Transfer Reaction ~(208)Pb(~7Li,~6He)~(209)Bi in Deep Sub-barrier Region

<正>Due to the limit of the intensity and quality of the radioactive ion beam(RIB),it is a difficult task to extract the optical model potentials(OMPs)of halo nuclear systems directly from the elastic scattering measurement.In view of this fact,the transfer reaction was tried to be used as an alternative method to extract and stud-     

Fabrication of microfluidic devices using MeV ion beam Programmable Proximity Aperture Lithography (PPAL)

MeV ion beam lithography is a direct writing technique capable of producing microfluidic patterns and lab-on-chip devices with straight walls in thick resist films. In this technique a small beam spot of MeV ions is scanned over the resist surface to generate a latent image of the pattern. The microstructures in resist polymer can be then revealed using a chemical developer that removes exposed resist, while leaving unexposed resist unaffected. In our system the size of the rectangular beam spot is programmably defined by two L-shaped tantalum blades with well-polished edges. This allows rapid exposure of entire rectangular pattern elements up to 500 × 500 μm in one step. By combining different dimensions of the defining aperture with the sample movements relative to the beam spot, entire fluidic patterns with large reservoirs and narrow flow channels can be written over large areas in short time. Fluidic patterns were written in PMMA using 56 MeV ¹⁴N³⁺ and a 3 MeV ⁴He²⁺ beams from K130 cyclotron and a 1.7 MV Pelletron accelerators, respectively, at the University of Jyväskylä Accelerator Laboratory. The patterns were characterized using SEM, and the factors affecting patterns quality are discussed.     

Calculation of Proton Induced Reaction on ~(209)Biin Energy Region from 7 to 250MeV

Accelerator-drivencleannuclearenergysystem(ADS)researchisofinteresttomanycountries.AnimportantpartofADSisthehigh-intensityneutronsouce,whichconsistsofaleadorlead-bismuthtargetirradiatedbyprotonatmediumenergies.Inthisenergyregion,residualnucleicanbeproduce…     

Study of basic mechanisms of semiconductor devices using ion beam induced charge (IBIC) collection

A change of wave form of current transients induced by a single heavy ion was investigated around a pn junction with 8 μm width and 10 μm length as a function of the ion incident position. Three pn junctions were made on a 3 μm thick Si epilayer (1 × 10¹⁶/cm³) grown on Si substrate and were in a line along an aluminum electrode with 10 μm spacing between the adjacent junctions. The elements of a pn junction array were irradiated with a 1 μm diameter 15 MeV C⁺ heavy ion microbeam spacing steps by 3 μm. At a bias voltage of − 10 V, 148, 91, and 54 fC were collected at the pn junction center, and at 3 μm and 4 μm from the edge of the electrode, respectively. Internal device structure was examined by IBIC (ion beam induced current) method by using a 2 MeV He⁺ ion microbeam. From the IBIC spectrum and the IBIC image, the charge collected from the open space by the diffusion process was observed in addition to the charge collected from the depletion layer of the pn junction.     

Research of Si and GaAs diode structures by Ion Beam Induced Charge (IBIC) collection

A Si pn junction diode and a GaAs Schottky diode were prepared for studying the basic mechanism of charge collection followed by high energy charged particle incidence in order to improve the resistance against single event upset. A 2 μm wide and 20 μm long rectangular Al electrode attached to a circular Al electrode with a 50 μm diameter was made on a 2.5 μm thick epilayer (minority carrier density 2 × 10¹⁵ /cm³). Both a Schottky electrode of Al (5 μm × 110 μm) and two ohmic electrodes of AuGe/Ni (110 μm × 110 μm) were made on a 2 μm thick epilayer (7.3 × 10¹⁵ /cm³) grown on a semi insulator GaAs substrate (1 × 10⁷ Ω cm). The internal device structure was examined by the IBIC (Ion Beam Induced Charge) method using a 2 MeV He⁺ ion microbeam. IBIC images clearly show an Al electrode, the SiO₂, and an epilayer. These results were then used to improve the qualities of the test diodes.