低能电子束照射集成电路芯片时的静态电容衬度分析

在研究低能电子束照射绝缘物时在二次电子返回特性的基础上,通过绝缘物表面照射微区和衬底之间的有效电容,获得了表面电位和二次电子信号电流在表面电荷积累过渡过程中随照射条件的变化关系,建立了电子束照射覆盖有绝缘膜的IC芯片时形成静态电容衬度的理论模型.从理论上分析了电子束照射条件和芯片内部形貌、材料参数对静态电容衬度的影响,解释了在扫描电镜实验中的最大衬度现象及其对应的最佳电子照射条件.     

1 µm MOSFET VLSI technology: Part VIII—Radiation effects

In this paper the effect of electron-beam radiation on polysilicon-gate MOSFET's is examined. The irradiations were performed at 25 kV in a vector scan electron-beam lithography system at dosages typical of those used to expose electron-beam resists. Two types of studies are reported. In the first type, devices fabricated with optical lithography were exposed to blanket electron-beam radiation after fabrication. In the second, discrete devices from a test chip, fabricated entirely with electron-beam lithography, were used. It is shown that in addition to the threshold voltage shift, caused by the accumulation of radiation-induced positive charge in the gate oxides, these charged centers and additional uncharged (neutral) electron traps lead to an increase in the electron trapping in irradiated oxides. Temperatures above 550°C are shown to be required to anneal both the positive and neutral traps completely from the oxide underlying polysilicon after exposure to radiation. Annealing of the radiation-induced positive charge from the oxide is shown to depend on the metallurgy overlying the gate insulator during heat treatment. Annealing treatments which remove the charged centers from aluminum-gated MOS structures are demonstrated to leave small (about 5 × 10¹⁰cm^-2) but significant amounts of charge in certain polysilicon-gate structures. The dependence of positive and neutral trap densities on direct electron-beam exposure was studied in the range between 10 and 200 µC/cm². Studies on the electron-beam fabricated devices indicate that indirect exposure of the gate oxide by electrons scattered from the primary beam during lithography in areas away from the gate oxide is sufficient to cause appreciable damage. After postmetal annealing at 400° C for 20 min, the minimum residual charge density found in the electron-beam fabricated devices is 4 × 10¹⁰cm^-2.     

Analysis for charged spacers in FED

Charged spacers in the field emission display (FED) are analyzed with the Monte Carlo method. The spacer is made of an insulator, which has generally a high secondary electron emission property. Under electron bombardment, the secondary electron emission induces charge on the spacer. We show that the surface of the spacer is charged positively in FED operation, which would cause an image distortion. We analyze the effect of charging on the spacer in terms of the electron density profile and luminescence profile of a dot near the spacer. Simulation results show that the image of a dot near the spacer is darker and smaller than that of a dot away from the spacer, though electrons are crowded near spacers. The results are confirmed by experiments. Finally, we suggest a way to reduce the effect of spacer charging by introducing a metal strip     

Neutron irradiation of insulated gate field effect transistors

Insulated gate field effect transistors and polysilicon-gated capacitors were irradiated with fast (10 keV <E < 2 MeV) neutrons. As expected, damage to the bulk silicon was detected as a degradation in the minority carrier lifetime. Optically assisted electron injection was employed for the first time to examine neutral electron trap and fixed positive charge generation in the gate insulator of the devices. While fixed positive charge densities of ≤6 x 10¹⁰ cm⁻² were detected, little or no neutral electron trap generation was observed. The small density of coulombic defects observed in the insulator could be accounted for fully by the known flux of gamma rays associated with the neutron irradiation process. This indicates that fast neutrons passing through a thin gate oxide do not produce significant amounts of damage in the oxide. Somewhat surprisingly, it was found that 1.5 keV X-rays created similar lifetime degradation effects in the bulk silicon, as did fast neutrons, even though this photon energy is not believed to be capable of producing bulk damage in the form of atom displacement in either the semiconductor or the insulator. The minority carrier lifetime of the silicon could be restored to initial values following either neutron or x-ray exposure by annealing in H₂ for 30 min at 400° C.     

SiO2 gate insulator defects,spatial distributions,densities, types,and sizes

Standard IC processes, as well as those involving the use of ionizing radiation, such as x-ray lithography etc., result in the generation of bulk defects, and interface states in the gate insulator, or underlying substrate, respectively, of insulated gate field effect transistors. Bulk defects are believed to be present as positively and negatively charged electron and hole traps, respectively, as well as neutral hole and “large” and “small” neutral electron traps. This paper provides a perspective of the current state of knowledge about the spatial distributions of large bulk defects, their areal densities, sizes, possible interrelationships among them, and the special cases of defects created by ion implanted silicon and oxygen, where knock-on effects have been simulated. It appears that bulk defects may all have their origin in neutral hole traps, (so-called E′ centers) and that when the insulator thickness is decreased to about 6-7 nm, defects are either no longer present, or, more likely, are incapable of trapping charge at room temperature because trapped carriers can either tunnel to one of the interfaces, or be annihilated by a reverse process. It appears possible also that the precursor of the several types of defects only forms at a “grown” silicon-silicon oxide interface. In theory, this would make it possible to grow defect free insulators by a combination of deposition and oxidation processes.     

The investigation into charge degradation of MIS structures under strong electric field by a method of controlled current load

A new method for studying charge degradation of MIS structures by applying a controlled current load to the structure and taking the time dependence of the voltage is suggested. It allows designers (without switching the structure) to monitor changes in the charge state of MIS structures under the conditions when the capacitance is charged and the charge is injected into the insulator. Charge degradation of metal-PSG-passivated thermal silicon dioxide-insulator structures was studied. It was found that both the SiO₂ space charge and the density of fast surface states generated by tunnel electron injection from the SiO₂ electrode decrease once current load has disappeared.     

Simulation of charge effects on density maps obtained by high-resolution electron crystallography

Atomic scattering factors for electrons are strongly affected by the charge status of the scattering atoms. The difference in scattering factors for charged and neutral atoms is most pronounced in the resolution range below 5 A. As a result of the negative scattering factors of negatively charged atoms in the low-resolution range, charged glutamate or aspartate residues produce weaker densities in electron crystallographic maps than their neutral forms. Such charge effects were indeed observed in an experimental map of bacteriorhodopsin. Here we present mathematical simulations of this charge effect on electron crystallographic density maps that corroborate the experimental results. For the simulations, we first evaluated the errors introduced by approximating atomic scattering factors for neutral and charged atoms by Gaussians. The simulations then showed that the effect of a polarized pair of oxygen and hydrogen atoms on the density (polarization effect) was much smaller than that expected from the individual charged atoms (charge effect), due to charge compensation. Still, density maps obtained by electron crystallography are expected to show slightly elongated features toward the positively charged atoms.     

Charge storage by irradiation with UV light in non-biased MNOS structures

Charge storage in non-biased MNOS (Metal-Nitride-Oxide-Semiconductor) structures effected by irradiation with UV light has been investigated. The electrons generated by internal photoemission at the Si surface are trapped at the SiO₂Si₃N₄-interface and inside the Si₃N₄. The resulting charge storage in the insulator can be determined by capacitance technique. The observed positive voltage shift in C-V-characteristics depends on photon energy as well as on radiant exposure. The charge storage occurs in three stpes which can be related to various types of traps. The charged structure can partially be discharged by irradiation with light of less energy than needed for the storage process.     

Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

The high-frequency capacitance–voltage characteristics of metal–oxide–semiconductor structures on n-Si substrates with an oxide thickness of 39 Å are studied upon being subjected to damage by field stress. It is shown that the action of a high, but pre-breakdown electric field on an ultrathin insulating layer brings about the formation of a large number of additional localized interface electron states with an energy level arranged at 0.14 eV below the conduction band of silicon. It is found that, as the field stress is increased, the recharging of newly formed centers provides the accumulation of excess charge up to 8 × 10¹² cm^–2 at the silicon–oxide interface. The lifetime of localized centers created under field stress is two days, after which the dependences of the charge localized at the semiconductor–insulator interface on the voltage at the gate after and before field stress are practically the same.     

Space charge characteristics of an insulating thin film negatively charged by a low-energy electron beam

In this study, based on a comprehensive numerical simulation of self-consistent charging, we investigate the formation, evolution and influencing factors of space charge distributions for a grounded insulating thin film of SiO(2) negatively charged by a keV non-penetrating focused electron beam. The simulated space charge presents first positive distributions and then negative ones along both the radial and depth directions because of the difference between electron and hole transports. The variations in distribution occur within a range of the minimum potential acting as a potential barrier for carrier transport. The negative space charge is distributed more widely and deeply, though its peak value in density is usually lower than that of the positive one. Electrons trapped outside the minimum potential range dominate the strength of negative charging. With the increase in potential barrier and the occurrence of leakage current, the space charge eventually reaches equilibrium and exhibits an approximately one-dimensional axial distribution outside the minimum potential range. Distribution features of the space charge density in the equilibrium state correlate with the film and beam parameters via transients of the leakage current. These results and analyses provide new insights into the negative charging effects involved in various electron-beam-based surface microscopic methods, analyses and fabrication techniques.     

Model of the behavior of MOS structures under ionizing irradiation

A quantitative model describing the behavior of MOS structures under ionizing irradiation is developed. The model is based on the capture of holes by hydrogen-containing traps. Some traps are charged and thus form a positive space charge in the insulator. The other traps decay to release positive hydrogen ions. These ions migrate in the insulator electric field to the insulator-semiconductor interface, where they depassivate surface states. The charging of surface states both under irradiation and during measurement of the threshold voltage is taken into account.     

Chaotic oscillations in electron beam with virtual cathode in external magnetic field

This article presents the results of a numerical study of external magnetic field influence on the conditions and mechanisms of virtual cathode (VC) formation in a relativistic electron beam. It also considers other related issues, e.g. peculiarities of nonlinear dynamics of electron beam with VC under changed external magnetic field, different mechanisms of VC oscillation chaotisation leading to complication of vircator system dynamics and appearance of multi-frequency VC oscillations. General systemic mechanism of VC oscillation chaotisation has been identified which is connected with formation of electronic patterns in electron beam whose interaction in the common field of spatial charge determines appearance of additional inner feedback. Transition from chaotic to periodical oscillation regime is found to be connected with destroying the mechanism of secondary electronic structures (electron bunches) formation. Besides, the influence of extent of screening of electron gun from magnetic field is discussed.     

Surface charging suppression using PEDOT/PSS in the fabrication of three dimensional structures on a quartz substrate

Pattern writing on insulating materials (e.g. quartz) using electron beam lithography (EBL) is a challenging task and it is even more difficult when the pattern is three dimensional (3D). Surface charging trapped on insulating substrates may deflect the electron beam during electron beam pattern writing causing undesired effects.In this work, the surface charging has been suppressed by top coating with water soluble conductive polymer layer using poly (3,4-Etylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS). The 3D masking profiles are created on a negative tone photoresist (Microresist, ma-N2403) using Raith150 EBL tool with variable dose controlled beam exposure. The 3D patterns have been transferred onto the quartz substrate by single step reactive ion etching (RIE) with suitable resist to substrate selectivity.We have demonstrated the fabrication of 3D geometrical shapes such as pyramids, hemispheres, and cones with dimensions down to 300 nm using this technique without any surface charging effects.     

Bias-temperature stability of nitrided oxides and reoxidized nitrided oxides

It is well known that bias-temperature stressing of MOS devices produces increased interface state densities and insulator fixed charges, thus limiting the high temperature applications of these devices. Nitrided oxides have previously been reported to offer increased resistance to interface state generation and insulator charge buildup in ionizing radiation and room temperature hot electron stress, but under some nitridation conditions are known to suffer from problems which include a low field bias temperature instability. We will report that reoxidized nitrided oxides can offer increased resistance to both bias-temperature stress-induced interface state generation and insulator charge buildup compared with the original oxides.     

Effect of a magnetic field on the structure of a high-current electron beam with a compensated charge

A mathematical model of a high-current electron beam with a compensated charge is developed. The effect of the 3D axially symmetric magnetic field induced by the beam current is taken into account. The model is based on the method of current tubes, which makes it possible to calculate electron trajectories in the presence of an external axially symmetric magnetic field. It is demonstrated that, in the presence of an external axially symmetric magnetic field, the beam rotates around its axis and the azimuthal current is induced. The shapes of electron trajectories are strongly affected by the magnetic field of the azimuthal current. The electron trajectories are calculated for various beam currents and external magnetic fields. It is shown that a significant nonlinearity leads to crossing of the trajectories of the initially laminar beam, sheath formation after passing the crossover, and collisionless thermalization of the beam. The boundary of the region inside which the beam can stably overcome the first crossover is determined.     

轴棱锥非圆对称加工误差对贝塞耳光束质量的影响

在惠更斯-菲涅耳衍射积分理论和稳相法的基础上,分析了轴棱锥非圆对称加工误差对其所产生的零阶贝塞耳光束(J0光束)质量的影响,对CCD拍摄的贝塞耳光斑图样进行了数值模拟。计算结果指出,当轴棱锥的截面为圆对称的理想加工时,轴棱锥产生的光场分布为近似理想的零阶贝塞耳光。当存在非圆对称加工误差,且截面为椭圆形时,衍射光斑将偏离J0光.随着椭圆半长短轴之差的增大,偏离程度增大。实验结果和理论模拟吻合得很好。     

The mechanism of metal conductivity over the interface between organic insulators

The hopping mobility of charge carriers (both at the surface and in the bulk) is analyzed theoretically in the presence of electron–hole pairs. A physical model is suggested for the metal conductivity over the interface between organic materials, each being an insulator by itself. The conductivity is due to the rather high surface density of geminate pairs formed at the interface. Conditions are established wherein the transitions of a significant portion of charge carriers between molecules do not require thermal activation or tunneling. The surface conductivity and mobility of charge carriers are estimated by numerical simulation.     

Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric

Large positive shifts of turn-on voltage V_to were observed in ferroelectric organic thin film transistor using P(VDF-TrFE) copolymer (57–43 mol%) as gate insulator during OFF to ON state sweeping. The shift of the transfer characteristic up to +25 V is attributed to the accumulation of mobile charge carriers (holes) in pentacene layer even during the device OFF state. The observed phenomena were first discussed on the basis of a negative surface potential created by the dipole field of a polar dielectric and trap states in an organic semiconductor layer. It was however found that these were unable to fully address the observed strong V_to shift due to the presence of large polarization in the P(VDF-TrFE) layer. A mechanism of negative polarization-compensating charges which are injected to the insulator region next to the semiconductor layer was proposed and examined to understand the phenomenon. The turn-on voltage is found to change with different magnitude of positive voltage pulses, and corresponds to different amount of charges injected for compensation. Time measurement of drain current shows a transient decaying behavior when gate bias is switched from positive to negative polarity which confirms the trapping of negative charges in the insulator.     

Characterization of charging in semiconductor device materials by electron holography

Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm(-1), on the order of the breakdown voltage.     

Transmission electron microscopy on thin film of high density magnetic composite prepared by FIB method

A thin specimen of a high density magnetic composite (HDMC), which is a type of powder magnetic cores was prepared for transmission electron microscopy (TEM) using a focused ion beam (FIB) method. A homogeneous thin film containing an insulator boundary between the constituent Fe powders was obtained successfully. Using this thin film, detailed flow of magnetic flux was visualized by electron holography, and the magnetic flux density was estimated to be 1.73 +/- 0.09 T being consistent with that of a bulk HDMC (1.70 T). Moreover, through Lorentz microscopy, the characteristic magnetization process of HDMC was observed by applying the magnetic field up to approximately 8 kA/m.