Depth-dependent magnetic characterization of Fe films on NiO(0 0 1)

We used nuclear hyperfine spectroscopies and a ⁵⁷Fe probe layer approach to study the depth-dependent magnetic properties of ultrathin Fe films on NiO(0 0 1), a system exhibiting exchange bias. Conversion electron Mössbauer spectroscopy and nuclear resonance scattering of synchrotron radiation were employed. The samples were two Fe films with a thickness (8–10 ML) slightly above the critical thickness for the onset of ferromagnetism at room temperature, in which a 2 ML-thick probe layer, enriched in the ⁵⁷Fe Mössbauer isotope, was embedded at different depths from the Fe/NiO interface. Both techniques indicate that inside the film Fe has a metallic character, while at the interface with NiO different Fe phases are present. The main conclusion is that already a few monolayers from the interface with NiO the magnetic properties of Fe are bulk-like.     

Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The films were prepared by reactive DC sputtering at the temperatures of ?200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at ?200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar⁺ ion beam with ion fluence of about 1.2–1.7 × 10¹⁶ ions/cm² caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at ?200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 10¹⁶ ions/cm².     

A mixed P1–DP0 diffusion theory for planar geometry

A variational analysis is used to derive a mixed P₁–DP₀ (P₁ spherical harmonics–double P₀ spherical harmonics) angular approximation to the time-independent monoenergetic neutron transport equation in one-dimensional planar geometry. This mixed angular approximation contains a space-dependent weight factor α(x) that controls the local angular approximation used at a spatial point x: α(x) = 1 yields the standard P₁ (diffusion) approximation, α(x) = 0 gives the standard DP₀ approximation, and 0 < α(x) < 1 produces a mixed P₁–DP₀ angular approximation. The diffusion equation obtained differs from the standard P₁ diffusion equation only in the definition of the diffusion coefficient. Standard Marshak incident angular flux boundary conditions are also obtained via the variational analysis. We examine the use of this mixed angular approximation coupled with the standard P₁ approximation to more accurately treat material interfaces and vacuum boundaries. We propose a simple but effective functional form for the weight factor α(x) that removes the need for the user to specify the value. Numerical results from several test problems are presented to demonstrate that significant improvements in accuracy can be obtained using this method with essentially no computational penalty.     

Early stage of the crystallization in amorphous Fe–Si layers: Formation and growth of metastable α-FeSi2

Crystallization processes of amorphous Fe–Si layers have been investigated using transmission electron microscopy (TEM). Si(1 1 1) substrates were irradiated with 120 keV Fe ions at ?150 °C to a fluence of 1.0 × 10¹⁷ cm². An Fe-rich amorphous layer embedded in an amorphous Si was formed in the as-irradiated sample. Plan-view TEM observations revealed that a part of the amorphous Fe–Si layer crystallized to the metastable α-FeSi₂ after thermal annealing at 350 °C for 8 h. The lattice parameter of c-axis decreased with thermal annealing. It was considered that the change in the lattice parameter originates from the decrease of the Fe occupancy at (0, 0, 1/2) and its equivalent positions in the unit cell of the metastable α-FeSi₂.     

Interaction of 〈1 0 0〉 loops with Carbon atoms and 〈1 0 0〉 dislocations in BCC Fe: An atomistic study

We apply atomistic simulations using the so called ‘metallic-covalent bonding’ interatomic model for the Fe–C system to study mobility of 〈1 0 0〉 interstitial dislocation loops, known to form in Fe and Fe-based ferritic alloys under irradiation, and their interaction with Carbon atoms. Carbon atoms represent an effective trap for the 〈1 0 0〉 loops with a binding energy of the order of 1 eV. The mobility of the loops is studied using the dislocation – loop drag model. From this model the activation parameters are identified and discussed.     

Understanding the phase equilibrium and irradiation effects in Fe–Zr diffusion couples

We have studied the radiation effects in Fe–Zr diffusion couples, formed by thermal annealing of a mechanically bonded binary system at 850 °C for 15 days. After irradiation with 3.5 MeV Fe ions at 600 °C, a cross sectional specimen was prepared by using a focused-ion-beam-based lift out technique and was characterized using scanning/transmission electron microscopy, selected-area diffraction and X-ray energy dispersive spectroscopy analyses. Comparison studies were performed in localized regions within and beyond the ion projected range and the following observations were obtained: (1) the interaction layer consists of FeZr₃, FeZr₂, Fe₂Zr, and Fe₂₃Zr₆; (2) large Fe₂₃Zr₆ particles with smaller core particles of Zr-rich Fe₂Zr are found within the α-Fe matrix; (3) Zr diffusion is significantly enhanced in the ion bombarded region, leading to the formation of an Fe–Zr compound; (4) grains located within the interaction layer are much smaller in the ion bombarded region and are associated with new crystal growth and nanocrystal formation; and (5) large α-Fe particles form on the surface of the Fe side, but the particles are limited to the region close to the interaction layer. These studies reveal the complexity of the interaction phase formation in an Fe–Zr binary system and the accelerated microstructural changes under irradiation.     

Ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30–45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO₂ cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O₂), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 × 10¹⁶ cm^?2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ～2.3 ×  10¹⁷ cm^?2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 × 10¹⁷ cm^?2), a whole stoichiometric layer is obtained, with reduction of structural quality.     

129I AMS at 0.5 MV tandem accelerator

The ¹²⁹I measurement program has been established at the 0.5 MV ‘Tandy’ accelerator of the PSI/ETH Zürich AMS facility. This development was made possible by using a SiN window instead of Mylar one in a gas ionization detector. The setting up of the ¹²⁹I measurement at Tandy is simple, the acquired performance is stable and reliable, and the quality of results is equal to or better than at our larger EN-tandem. With this setup, high sample throughput, which is required in many ¹²⁹I studies, can be easily achieved. The measurements are performed in the +3 charge state. At this charge state the major difficulty in the ¹²⁹I⁺³ identification is caused by a highly abundant 43⁺¹ (m = 43, q = +1) molecule interference. This is a positive molecular ion, because its intensity reduces exponentially with an increase in gas stripper pressure. We conclude that this molecule is ²⁷Al¹⁶O⁺ (m/q = 43/1 = 129/3) and comes from the break-up of (Al₂O₃ + Al)^? (m = 129) precursor at the terminal: (Al₂O₃ + Al)^? → ²⁷Al¹⁶O⁺. The expected isobaric interferences ⁴³Ca⁺¹ and ⁸⁶Sr⁺², which also originate from the break-up of molecules in the stripper, were found to be low and do not disturb the ¹²⁹I⁺³ measurements. The best repeatable performance with our standard sample material was achieved at 0.14 μg/cm² Ar gas stripper pressure with machine blanks showing ～6 × 10^?14 normalized ¹²⁹I/I ratio and 9% transmission through the accelerator. However, high ²⁷Al¹⁶O⁺ molecular rates were observed from the user samples, and in order to destroy these molecules we had to increase the stripper pressure to ～0.22 μg/cm². This increase in the stripper pressure degraded the machine blank values to ～9 × 10^?14 and reduced transmission to 8%. Nevertheless, the achieved measurement conditions are sufficient for measurement of nearly all ¹²⁹I samples that have been submitted to PSI/ETH over the last few years.     

MeV Si ions bombardment effects on the thermoelectric properties of Co0.1SbxGey thin films

We have grown three different monolayer Co_0.1Sb_xGe_y (x = 2, 4, 11 and y = 15, 7, 15) thin films on silica substrates with varying thickness between 100 and 200 nm using electron beam deposition. The high-energy (in the order of 5 MeV) Si ion bombardments have been performed on samples with varying fluencies of 1 × 10¹², 1 × 10¹³, 1 × 10¹⁴ and 1 × 10¹⁵ ions/cm². The thermopower, electrical and thermal conductivity measurements were carried out before and after the bombardment on samples to calculate the figure of merit, ZT. The Si ions bombardment caused changes on the thermoelectric properties of films. The fluence and temperature dependence of cross plane thermoelectric parameters were also reported. Rutherford backscattering spectrometry (RBS) was used to analyze the elemental composition of the deposited materials and to determine the layer thickness of each film.     

Boron lattice site location in (BGa)As and (BGa)P thin films studied using RBS and NRA with a channeled He+ ion beam

In this study the boron lattice site location in ternary B_xGa_1?xAs and B_xGa_1?xP thin films grown on (0 0 1) GaAs and (0 0 1) GaP, respectively, using low pressure metal-organic vapour-phase epitaxy (MOVPE) with boron concentrations between x = 0.8% and x = 3.2% was investigated with RBS and the ¹⁰B(α,p)¹³C nuclear reaction using a 2.3 MeV He⁺ ion beam. For this purpose, the ion beam was aligned with the [0 0 1], [0 1 1] and [1 1 1] axis and the RBS and proton yield from the nuclear reaction compared with random ion incidence. For comparison, theoretical proton yields which assume boron to be located on substitutional lattice sites only were calculated for each sample/axis combination and compared with the experimental yields. The RBS/channeling measurements show a very good crystal quality of the films with χ_min being in the range of 3–5% for the [0 1 1] axis. The best crystal qualities, i.e. the lowest χ_min values and dechanneling rates, are achieved for low boron concentrations. From NRA/channeling it can be deduced that in the B_xGa_1?xAs films the fraction of interstitial boron is approximately 5% for low boron concentrations of x = 1% and 6–10% for concentrations up to x = 3.2%, whereas the fraction of interstitial boron is less than 3% in the B_xGa_1?xP film studied despite a concentration of x = 2.0%. This indicates that antisite effects of the boron incorporation are more likely in GaAs compared to GaP.     

An advance process of aluminum rich coating as tritium permeation barrier on 321 steel workpiece

We have proposed an advance three-step process, Al-electroplating in ionic liquid followed by heat treating and selectively oxidation, preparing aluminum rich coating as tritium permeation barrier (TPB). In present work, the advance process was applied to 321 steel workpieces. In the Al-electroplating, pieces were coated by galvanostatic electrodeposition at 20 mA/cm² in aluminum chloride (AlCl₃)–1-ethyl-3-methylimidazolium chloride (EMIC) ionic liquid. The Al coating on those pieces all displayed attractive brightness and well adhered to surface of pieces. Within the aluminizing time from 1 to 30 h, a series of experiments were carried out to aluminize 321 steel pieces with Al 20 μm coating at 700 °C. After heat treated for 8 h, a 30 μm thick aluminized coating on piece appeared homogeneous, free of porosity, and mainly consisted of (Fe, Cr, Ni)Al₂, and then was selectively oxidized in argon gas at 700 °C for 50 h to form Al₂O₃ scale. The finally fabricated aluminum rich coating, without any visible defects, had a double-layered structure consisting of an outer γ-Al₂O₃ layer with thickness of 0.2 μm and inner (Fe, Cr, Ni)Al/(Fe, Cr, Ni)₃Al layer of 50 μm thickness. The deuterium permeation reduction factor, PRF, of piece (Φ 80 × 2, L 150 mm) with such coating increased by 2 orders of magnitude at 600–727 °C. The reproducibility of the process was also showed.     

Theoretical critical angels of ion channeling in carbon nanotubes

We have developed a mass- and charge-dependent equation to predict theoretical critical angles for ion channeling in carbon nanotubes. We focus M (ion mass) effects how to reduce Ze (ion nucleus charge) effects on Ψ_C (critical angles). As an instance, we give theoretical critical angels of He, Ne, Ar, Kr, Xe and Rn ion channeling in carbon nanotubes. We find that for (10, 10) single-wall carbon nanotubes, Ψ_C(He) ≈ Ψ_C(Ne) ≈ Ψ_C(Ar) ≈ Ψ_C(Kr) ≈ Ψ_C(Xe) ≈ Ψ_C(Rn) ≈ 23.3 (keV/E)^1/2 deg. This is because (Z/M)^1/2 ≈ 0.66 [amu]^?1/2.     

Determination of differential cross-sections for the natK(p, p0) and 39K(p, α0) reactions in the backscattering geometry

In the present work, new, differential cross-section values are presented for the ^natK(p, p₀) reaction in the energy range E_lab = 3000–5000 keV (with an energy step of 25 keV) and for detector angles between 140° and 170° (with an angular step of 10°). A qualitative discussion of the observed cross-section variations through the influence of strong, closely spaced resonances in the p + ³⁹K system is also presented. Information has also been extracted concerning the ³⁹K(p,α₀) reaction for E_lab = 4000–5000 keV in the same angular range. As a result, more than ～500 data points will soon be available to the scientific community through IBANDL (Ion Beam Analysis Nuclear Data Library – http://www-nds.iaea.org/ibandl/) and could thus be incorporated in widely used IBA algorithms (e.g. SIMNRA, WINDF, etc.) for potassium depth profiling at relatively high proton beam energies.     

Photoluminescence induced from hot Ge implantation into SiO2

Up to the present, by using the ion implantation technique, photoluminescence (PL) from Ge nanocrystals (Ge NCs) was obtained by room temperature (RT) Ge implantation into a SiO₂ matrix followed by a high temperature anneal. In this way two PL bands were observed, one at 310 nm and the second, with much higher yield at 390 nm. In the present work we have used another experimental approach. We have performed the Si implantation at high temperature (T_i) and then, we have done a higher temperature anneal (T_a) in order to nucleate the Ge NCs. With this aim we have changed T_i between RT and 600 °C. By performing the implantation at T_i = 350 °C we found a PL yield four times higher than the one obtained from the usual RT implantation at the same fluence. Moreover, by changing the implantation fluence between Φ = 0.25 × 10¹⁶ and 2.2 × 10¹⁶ Ge/cm² we observed that Φ = 0.5 × 10¹⁶ Ge/cm² induces a PL yield three times higher as compared to the usual RT implantation fluence. In conclusion, using a hot Ge implantation plus an optimal Ge atomic concentration, we were able to gain more than one order of magnitude in the 390 nm PL yield as compared with previous ion implantation results.     

Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis

Epitaxial ternary silicide Er_0.49Gd_0.51Si_1.7 layers with a good crystalline quality (χ_min of Er and Gd is 3.7%) have been formed by 60 keV Er and Gd ion implantation into Si(1 1 1) substrates to a total dose of 1.0 × 10¹⁷/cm² at 450°C using channeled ion beam synthesis (CIBS). The composition, the structure, the strain and the thermal stability of these layers have been studied using energy dispersive spectroscopy (EDS), Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). It is shown that the perpendicular and parallel elastic strains of the Er_0.49Gd_0.51Si_1.7 epilayer are e^⊥=−0.46% ± 0.02% and e⁶=+0.73% ± 0.19%. The layer is stable up to 900°C. Annealing at 950°C results in a phase transformation.     

Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling

Organometallic Vapor Phase Epitaxy (OMVPE) grown layered structures of In_0.1Ga_0.9As/GaAs have been analyzed by He⁺⁺ ion backscattering and channeling. From the random spectrum, the In_xGa_1 − xAs layer thickness was determined to be around 300 Å and the composition of In to be In_0.1 within an experimental error of around 5%. The χ_min obtained from the In signal is around 7% which shows that the epilayer is of good crystallinity. The normalized yield vs. the tilt angle for the epilayer and the substrate along the off-axis (along [1 1 0] direction of the substrate) shows a shift in the minimum yield χ_min dip, which is a direct measure of the strain present. This shift is found to be 0.2 ± 0.05° corresponding to a tetragonal distortion of 0.7 ± 0.2%. Shifting of the minimum yield dip of the overlayer towards left side with respect to the substrate indicates that the strain is compressive which is what is expected. X-ray diffraction is also carried out on the same sample which gives us ϵ_⊥=1.01% and the in-plane lattice mismatch is nearly zero.     

High energy Si ions bombardment effects on the properties of nano-layers of SiO2/SiO2 + Ag

We grew 50 periodic SiO₂/SiO₂ + Ag multi-layers by electron beam deposition technique. The co-deposited SiO₂ + Ag layers are 7.26 nm, SiO₂ buffer layers are 4 nm, and total thickness of film was determined as 563 nm. We measured the thickness of the layers using in situ thickness monitoring during deposition, and optical interferometry afterwards. The concentration and distribution of Ag in SiO₂ were determined using Rutherford backscattering spectrometry (RBS). In order to calculate the dimensionless figure of merit, ZT, the electrical conductivity, thermal conductivity and the Seebeck coefficient of the layered structure were measured at room temperature before and after bombardment with 5 MeV Si ions. The energy of the Si ions was chosen such that the ions are stopped deep inside the silicon substrate and only electronic energy due to ionization is deposited in the layered structure. Optical absorption (OA) spectra were taken in the range 200–900 nm to monitor the Ag nanocluster formation in the thin layers.     

Photoluminescence induced by Si implantation into Si3N4 matrix

Up to the present, photoluminescence (PL) was obtained from near stoichiometric or amorphous Si nitride films (SiN_x) after annealing at high temperatures. As a consequence, the existence of PL bands has been reported in the 400–900 nm range. In the present contribution, we report the first PL results obtained by Si implantation into a stoichiometric 380 nm Si₃N₄ film. The Si excess is obtained by a 170 keV Si implantation at different temperatures with a fluence of Φ = 10¹⁷ Si/cm². Further, we have annealed the samples in a temperature range between 350 and 900 °C in order to form the Si precipitates. PL measurements were done using an Ar laser as an excitation source, and a broad PL band basically centered at 910 nm was obtained. We show that the best annealing condition is obtained at T_a = 475 °C for the samples implanted at 200 °C, with a PL yield 20% higher than the obtained at room temperature implantation. Finally, we have varied the implantation fluence and, consequently, the Si nanocrystals size. However, no variation was observed nor in the position neither in the intensity of the PL band. We concluded that the PL emission is due to radiative states at the matrix and the Si nanocrystals interface, as previously suggested in the literature.     

Investigation on a corrosion product deposit layer on a boiling water reactor fuel cladding

Recent investigations on the complex corrosion product deposits on a boiling water reactor (BWR) fuel cladding have shown that the observed layer locally presents unexpected magnetic properties. The magnetic behaviour of this layer and its axial variation on BWR fuel cladding is of interest with respect to non-destructive cladding characterization. Consequently, a cladding from a BWR was cut at elevations of 810 mm, where the layer was observed to be magnetic, and of 1810 mm where it was less magnetic. The samples were subsequently analyzed using electron probe microanalysis (EPMA), magnetic analysis and X-ray techniques (μXRF, μXRD and μXAFS).Both EPMA and μXRF have shown that the observed corrosion deposit layer which is situated on the Zircaloy corrosion layer consists mostly of 3-d elements’ oxides (Fe, Zn, Ni and Mn). The distribution of these elements within the investigated layer is rather complex and not homogeneous. The main phases identified by 2D μXRD mapping inside the layer are hematite and spinel phases with the common formula M_xFe_y(M_(1?x)Fe_(2?y))O₄, where M = Zn, Ni, Mn. It has been shown that the solid solutions of these phases were obtained with rather large differences between the parameter cell of the known spinels (ZnFe₂O₄, NiFe₂O₄ and MnFe₂O₄) and the investigated material. The comparison of EPMA with μXRD analysis shows that the ratio of Fe₂O₃/MFe₂O₄ (M = Zn, Ni, Mn) phases in the lower sample equals ～1/2 and in the higher one ～1/1 within the analyzed volume of the samples. It has been shown that this ratio, together with the thickness of the corrosion product deposit layer, effect its magnetic properties.     

Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN

A GaN thin film was implanted with 5 × 10¹⁴ cm^?2 of 60 keV stable ¹⁶⁶Er, followed by the implantation of 2 × 10¹³ cm^?2 radioactive ¹⁶⁷Tm (t_1/2 = 9.3 d) and an annealing sequence up to 900 °C. The emission channeling (EC) technique was applied to assess the lattice location of Er following the Tm decay from the conversion electrons emitted by ^167mEr, which showed that more than 50% of ^167mEr occupies substitutional Ga sites. The results are briefly compared to a ^167mEr lattice location experiment in a GaN sample not pre-implanted with ¹⁶⁶Er. In addition, high-resolution X-ray diffraction (HRXRD) was used to characterize the perpendicular strain in the high-fluence implanted film. The HRXRD experiments showed that the Er implantation resulted in an increase of the c-axis lattice constant of the GaN film around 0.5–0.7%. The presence of significant disorder within the implanted region was corroborated by the fact that the EC patterns for off-normal directions exhibit a pronounced angular broadening of the order of magnitude of 0.5°.