Effect of annealing on conversion efficiency of nanostructured CdS/CuInSe2 heterojunction thin film solar cell prepared by chemical ion exchange route at room temperature

We report, the effect of air annealing on solar conversion efficiency of chemically grown nanostructured heterojunction thin films of CdS/CuInSe₂, such 100, 200 and 300 °C air annealed thin films characterized for physicochemical and optoelectronic properties. XRD pattern obtained from annealed thin films confirms tetragonal crystal geometry of CuInSe₂ and an increase in average crystallite size from 16 to 32 nm. An EDAX spectrum confirms expected and observed elemental composition in thin films. AFM represents high energy induced grain growth and agglomeration due to polygonization process. Increase in optical absorbance strength and decrease in energy band gap from 1.36 to 1.25 eV is observed. Increase in charge carrier concentration from 2 × 10¹⁶ to 8 × 10¹⁷ cm^?3 is observed as calculated from Hall effect measurements and an enhancement in solar conversion efficiency from 0.26 to 0.47% is observed upon annealing.     

Spectroscopic ellipsometry study of thin film thermo-optical properties

Spectroscopic ellipsometry (SE) was employed to realize in-situ monitoring and the determination of thermo-optic coefficients (TOC) of thin films by integrating a temperature controlled hot stage to the ellipsometer and applying the empirical relationship of Cauchy between the refractive index and wavelength in the data analysis. Magnetron sputtered titanium oxide thin films of 350 nm thick both as-deposited and post-deposition annealed were prepared on silicon wafers for this investigation. Results of ellipsometric analysis show that as-deposited TiO₂ films have a negative TOC of ? 1.21 × 10^? 4 K^? 1 at 630 nm over the test temperature range 304–378 K. The post-deposition annealing at 923 K for 2 hours leads an increase in film refractive index to 2.29 from 2.17 for as-deposited TiO₂ films, and an enhancement in TOC up to ? 2.14 × 10^? 4 K^? 1. X-ray diffraction (XRD) and scanning electron microscopy (SEM) cross-sectional analysis were performed for film structure characterization.     

Evolution of different structural phases of TiO2 films with oxygen partial pressure and Fe doping and their electrical properties

We have studied the influence of oxygen partial pressure (OPP; 250 mTorr–1 × 10^?5 Torr) and Fe doping (2 and 4 at.%) on structural and electrical properties of TiO₂ thin films on LaAlO₃ substrates. X-ray photoelectron spectroscopy suggests that Fe is not in metal cluster form. It is found that the evolution of the three phases; anatase, rutile and brookite of TiO₂ as well as the magneli phase (Ti_nO_2n?1) strongly depends on the OPP and Fe doping concentration. All the films grown at 250 mTorr show insulating behavior, whereas films grown at 1 × 10^?2 and 1 × 10^?4 Torr reveal high temperature metallic to low temperature semiconducting transition. Interestingly, films deposited at 1 × 10^?5 Torr reveal charge ordering, which is contributed to the magneli phase of TiO₂. The present study suggests that functionality of TiO₂ thin film based devices can be tuned by properly selecting the OPP and dopant concentration.     

Growth of p-type ZnO thin films by using an atomic layer epitaxy technique and NH3 as a doping source

Nitrogen-doped, p-type ZnO thin films have been grown successfully on sapphire (0001) substrates by atomic layer epitaxy (ALE) using Zn(C₂H₅)₂ [Diethylzinc, DEZn], H₂O and NH₃ as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE was 210 Ω cm with a hole concentration of 3.41 × 10¹⁶ cm^− 3. Low temperature-photoluminescence analysis results support that the nitrogen ZnO after annealing is a p-type semiconductor. Also a model for change from n-type ZnO to p-type ZnO by annealing is proposed.     

Application of nanostructured ZnO films for electrochemical DNA biosensor

Nanostructured zinc oxide (nsZnO) films have been fabricated onto conducting indium–tin–oxide (ITO) coated glass plate, by cathodic electro-deposition to immobilize probe DNA specific to M. tuberculosis via physisorption based on strong electrostatic interactions between positively charged ZnO (isoelectric point = 9.5) and negatively charged DNA to detect its complementary target. Electrochemical studies reveal that the presence of nano-structured ZnO results in increased electro-active surface area for loading of DNA molecules. The DNA–nsZnO/ITO bioelectrode exhibits interesting characteristics such as detection range of 1 × 10^?6 ? 1 × 10^?12 M, detection limit of 1 × 10^?12 M (complementary target) and 1 × 10^?13 M (genomic DNA), reusability of about 10 times, response time of 60s and stability of up to 4 months when kept at 4°C.     

Structural,optical and electrical characterization of ZnO:Ga thin films for organic photovoltaic applications

Gallium-doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by RF magnetron sputtering. The effect of growth temperature on microstructure, optical and electrical properties of the films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented, and that the growth temperature significantly affects the microstructure and optoelectrical properties of the films. The film deposited at 670 K has the largest grain size of 71.9 nm, the lowest resistivity of 8.3 × 10^? 4 Ω?cm and the highest figure of merit of 2.1 × 10^? 2 Ω^? 1. Furthermore, the optical energy gaps and optical constants were determined by optical characterization methods. The dispersion behavior of the refractive index was also studied using the Sellmeir's dispersion model and the oscillator parameters of the films were obtained.     

Fabrication of n-Zn1−xGaxO/p-(ZnO)1−x(GaP)x thin films and homojunction

Ga doped ZnO (GZO) and GaP codoped ZnO (GPZO) thin films of different concentrations (1–4 mol%) have been grown on sapphire substrates by RF sputtering for the fabrication of ZnO homojunction. The grown films have been characterized by X-ray diffraction (XRD), photoluminescence (PL), Hall measurement, energy dispersive spectroscopy (EDS), time-of-flight secondary ion mass spectrometer (ToF-SIMS), UV–Vis–NIR spectroscopy and atomic force microscopy (AFM). Unlike in conventional codoping, here we directly doped (codoped) GaP into ZnO to realize p-ZnO. The Hall measurements indicate that 2 and 4% GPZO films exhibit p-conductivity due to the sufficient amount of phosphorous incorporation while all the monodoped GZO films showed n-conductivity as expected. Among the p-ZnO films, 2% GPZO film shows low resistivity (2.17 Ωcm) and high hole concentration (1.8 × 10¹⁸ cm^?3) by optimum incorporation of phosphorous due to best codoping. Similarly, among the n-type films, 2% GZO shows low resistivity (1.32 Ωcm) and high electron concentration (2.02 × 10¹⁹ cm^?3) by optimum amount of Ga incorporation. The blue shift and red shift in NBE emission observed from PL acknowledged the formation of n- and p-conduction in monodoped and codoped films, respectively. The neutral acceptor bound exciton recombination (A⁰X) observed by low temperature PL for 2% GPZO confirms the p-conductivity. Further, the high concentration of P atoms than Ga observed from ToF-SIMS (2% GPZO) also supports the p-conductivity of the films. The fabricated p–n junction with best codoped p-(ZnO)_0.98(GaP)_0.02 and best monodoped n-Zn_0.98Ga_0.02O films showed typical rectification behavior of a diode. The diode parameters have also been estimated for the fabricated homojunction.     

Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films

Amorphous Zn–Sn–O (ZTO) thin films with relative Zn contents (= [at.% Zn]/([at.% Zn] + [at.% Sn])) of 0, 0.08 and 0.27 were fabricated by co-sputtering of SnO₂ and ZnO targets at room temperature. Changes in structural, electrical and optical properties together with electron transport properties were examined upon post-annealing treatment in the temperature range from 200 to 600 °C in vacuum and in air. Characterization by XRD showed that an amorphous ZTO thin film crystallized at higher temperatures with increasing Zn content. Crystallized ZTO films with a relative Zn content of 0.27 might not contain a single SnO₂ phase which is observed in the films of the other compositions. Amorphous ZTO films showed decreasing electrical resistivities with increasing annealing temperature, having a minimum value of 1 × 10^− 3 Ω cm. Upon crystallization, the resistivities increased drastically, which was attributed to poor crystallinity of the crystallized films. All the ZTO films were found to be degenerate semiconductors with non-parabolic conduction bands having effective masses varying from 0.15 to 0.3 in the carrier concentration range of 6 × 10¹⁸ to 2 × 10²⁰ cm^− 3. As for a ZTO film with a relative Zn content of 0.27, the degree of non-parabolicity was much lower compared with films of the other compositions, leading to a relatively stable mobility over a wide range of carrier concentration.     

Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Ga-doped zinc oxide (ZnO:Ga) transparent conductive films with highly (002)-preferred orientation were deposited on glass substrates by DC reactive magnetron sputtering method in Ar + O₂ ambience with different Ar/O₂ ratios. The structural, electrical, and optical properties were investigated by X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The resistivity and optical transmittance of the ZnO:Ga thin films are of the order of 10^− 4 Ω cm and over 85%, respectively. The lowest electrical resistivity of the film is found to be about 3.58 × 10^− 4 Ω cm. The influences of Ar/O₂ gas ratios on the resistivity, Hall mobility, and carrier concentration were analyzed.     

Preparation of ZnO:Al thin film on transparent TPT substrate at room temperature by RF magnetron sputtering technique

Aluminum doped ZnO thin films (ZnO:Al) deposited on flexible substrates are suitable to be used as transparent conductive oxide (TCO) thin films in solar cells because of the excellent optical and electrical properties. TPT films are a kind of composite materials and are usually used as encapsulation material of solar panels. In this paper, ZnO:Al film was firstly deposited on transparent TPT substrate by RF magnetron sputtering. The structural, optical, and electrical properties of the film were investigated by X-ray diffractometry (XRD), scanning electron microscope (SEM), UV–visible spectrophotometer, as well as Hall Effect Measurement System. Results revealed that the obtained film had a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Also, the film showed a high optical transmittance over 80% in the visible region and a resistivity of about 3.03 × 10^? 1 Ω·cm.     

Growth and characterization of (Pb,La)TiO3 films with and without a special buffer layer prepared by RF magnetron sputtering

The (Pb, La)TiO₃ (PLT) ferroelectric thin films with and without a special buffer layer of PbO_x have been deposited on Pt/Ti/SiO₂/Si(100) substrates by RF magnetron sputtering technique at room temperature. The microstructure and the surface morphology of the films annealed at 600 °C for 1 h have been investigated by X-ray diffraction (XRD) and atomic force microscope (AFM). The surface roughness of the PLT thin film with a special buffer layer was 4.45 nm (5 μm × 5 μm) in comparison to that of 31.6 nm (5 μm × 5 μm) of the PLT thin film without a special buffer layer. Ferroelectric properties such as polarization hysteresis loop (P–V loop) and capacitance–voltage curve (C–V curve) of the films were investigated. The remanent polarization (P_r) and the coercive field (E_c) are 21 μC/cm² and 130 kV/cm respectively, and the pyroelectric coefficient is 2.75 × 10^− 8 C/cm² K for the PLT film with a special buffer layer. The results indicate that the (Pb, La)TiO₃ ferroelectric thin films with excellent ferroelectric properties can be deposited by RF magnetron sputtering with a special buffer layer.     

An innovative process to fabricate copper/diamond composite films for thermal management applications

Diamond dispersed copper matrix (Cu/D) composite films with strong interfacial bonding were produced by tape casting and hot pressing without carbide forming additives. The tape casting process offers an original solution to obtain laminated materials with accurate thickness control, smooth surface finish, material net-shaping, scalability, and low cost. This study presents an innovative process of copper submicronic particles deposition onto diamond reinforcements prior to densification by hot pressing. Copper particles act as chemical bonding agents between the copper matrix and the diamond reinforcements during hot pressing, thus offering an alternative solution to traditionnal carbide-forming materials in order to get efficient interfacial bonding and heat-transfer in Cu/D composites. It allows high thermal performances with low content of diamond, thus enhancing the cost-effectiveness of the materials. Microstructural study of composites by scanning electron microscopy (SEM) was correlated with thermal conductivity and thermal expansion coefficient measurements. The as-fabricated films exhibit a thermal conductivity of 455 W m^?1 K^?1 associated to a coefficient of thermal expansion of 12 × 10^?6 °C^?1 and a density of 6.6 g cm^?3 with a diamond volume fraction of 40%, which represents a strong enhancement relative to pure copper properties (λ_Cu = 400 W m^?1 K^?1, α_Cu = 17 × 10^?6 °C^?1, ρ_Cu = 8.95 g cm^?3). The as-fabricated composite films might be useful as heat-spreading layers for thermal management of power electronic modules.     

Preparation and characterization of copper nanoparticles/zinc oxide composite modified electrode and its application to glucose sensing

We report a new method for selective detection of d(+)-glucose using a copper nanoparticles (Cu-NPs) attached zinc oxide (ZnO) film coated electrode. The ZnO and Cu-NPs were electrochemically deposited onto indium tin oxide (ITO) coated glass electrode and glassy carbon electrode (GCE) by layer-by-layer. In result, Cu-NPs/ZnO composite film topography was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. SEM and AFM confirmed the presence of nanometer sized Cu-NPs/ZnO composite particles on the electrode surface. In addition, X-ray diffraction pattern revealed that Cu-NPs and ZnO films were attached onto the electrode surface. Indeed, the Cu-NPs/ZnO composite modified electrode showed excellent electrocatalytic activity for glucose oxidation in alkaline (0.1 M NaOH) solution. Further, we utilized the Cu-NPs/ZnO composite modified electrode as an electrochemical sensor for detection of glucose. This glucose sensor showed a linear relationship in the range from 1 × 10^? 6 M to 1.53 × 10^? 3 M and the detection limit (S/N = 3) was found to be 2 × 10^? 7 M. The Cu-NPs/ZnO composite as a non-enzymatic glucose sensor presents a number of attractive features such as high sensitivity, stability, reproducibility, selectivity and fast response. The applicability of the proposed method to the determination of glucose in human urine samples was demonstrated with satisfactory results.     

Preparation of smooth zinc oxide thin film via liquid phase reaction with aluminum ion additives

ZnO thin films were formed in a solution with Zn(NO₃)₂ and Dimethylaminoborane at 70 °C. The effects of the aluminum ion concentration in the aqueous solution on the surface morphology, crystallographic structure and growth rate were investigated. By adding 10^? 4 mol/l of Al, the growth rate was enhanced from 0.13 to 0.35 μm/h. In addition, the surface morphology became flat when the appropriate amount of Al(NO₃)₃, i.e., 10^? 4 mol/l, was added. The R_a and R_z decreased from 20–32 nm and 115–145 nm to 1–11 nm and 7–60 nm, respectively.     

Annealing effect on the microstructure and photoluminescence of ZnO thin films

Zinc oxide thin films have been obtained by pulsed laser ablation of a ZnO target in O₂ ambient at a pressure of 0.13 Pa using a pulsed Nd:YAG laser. ZnO thin films deposited on Si (1 1 1) substrates were treated at annealing temperatures from 400 °C up to 800 °C after deposition. The structural and optical properties of deposited thin films have been characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence spectra, resistivity and IR absorption spectra. The results show that the obtained thin films possess good single crystalline with hexagonal structure at annealing temperature 600 °C. Two emission peaks have been observed in photoluminescence spectra. As the post-annealing temperature increase, the UV emission peaks at 368 nm is improved and the intensity of blue emission at 462 nm decreases, which corresponds to the increasing of the optical quality of ZnO film and the decreasing of Zn interstitial defect, respectively. The best optical quality for ZnO thin films emerge at post-annealing temperature 600 °C in our experiment. The measurement of resistivity also proves the decrease of defects of ZnO films. The IR absorption spectra of sample show the typical Zn–O bond bending vibration absorption at wavenumber 418 cm⁻¹.     

Structural and optical studies on dc reactive magnetron sputtered Cu2O films

Cuprous oxide (Cu₂O) thin films were deposited by dc reactive magnetron sputtering technique onto glass substrates by sputtering of pure copper target in a mixture of argon and oxygen gases under various oxygen partial pressures in the range 8 × 10^− 3–1 × 10^− 1 Pa at a constant substrate temperature of 473 K and a sputtering pressure of 4 Pa. The dependence of cathode potential on the oxygen partial pressure was explained in terms of cathode poisoning effect. The influence of oxygen partial pressure on the structural and optical properties of Cu₂O films was systematically studied. Single phase films of Cu₂O were obtained at an oxygen partial pressure of 2 × 10^− 2 Pa. The films formed at an oxygen partial pressure of 2 × 10^− 2 Pa were polycrystalline with cubic structure and exhibited an optical band gap of 2.04 eV.     

Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process

In this study, a simple method of fabricating a thin-film transistor (TFT) with a double-layered channel using indium–zinc-oxide (IZO) films was proposed. Two IZO films used as channel layers were consecutively deposited via sputtering without stopping the vacuum and only by changing the volumetric fraction of the additive O₂ gas during the deposition. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis showed a large difference in the depth profiles of the InO^? and InO₂^? ions between the two IZO layers. Compared to the conventional single-IZO-channel TFT, the double-IZO-channel TFT that was fabricated using the proposed two-step deposition method showed greatly improved electrical characteristics: the on/off-state current ratio was increased from 1.30 × 10⁵ to 1.03 × 10⁶, and the field effect mobility was enhanced from 1.2 to 9.3 cm²/Vs.     

Biopolymer-manganese oxide nanoflake nanocomposite films fabricated by electrostatic layer-by-layer assembly

Bio-nanocomposite films based on chitosan and manganese oxide nanoflake have been fabricated via the layer-by-layer (LBL) self-assembly technique. UV–vis absorption spectra showed that the subsequent growth of the nanocomposite film was regular and highly reproducible from layer to layer. X-ray photoelectron spectroscopy (XPS) spectra confirmed the incorporation of chitosan and manganese oxide nanoflake into the films. Scanning electron microscopy (SEM) images revealed that the nanocomposite film had a continuous surface and a layered structure. A sensitive hydrogen peroxide (H₂O₂) amperometric sensor was fabricated with the chitosan–manganese oxide nanoflake nanocompoite film. The sensor showed a rapid and linear response to H₂O₂ over the range from 2.5 × 10^? 6 to 1.05 × 10^? 3 M, with a sensitivity of 0.038 A M^? 1 cm^? 2.     

Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition

Transparent conductive oxide tungsten-doped tin oxide thin films were deposited on glass substrates from ceramic targets by the pulsed plasma deposition method. The structural, electrical and optical properties have been investigated as functions of tungsten doping content and oxygen partial pressure. The lowest resistivity of 2.1 × 10^? 3 Ω?cm was reproducibly obtained, with carrier mobility of 30 cm²V^? 1s^? 1 and carrier concentration of 9.6 × 10¹⁹ cm^? 3 at the oxygen partial pressure of 1.8 Pa. The average optical transmission was in excess of 80% in the visible region from 400 to 700 nm, with the optical band gap ranging from 3.91 to 4.02 eV.     

Structural and pyroelectric properties of sol–gel derived multiferroic BFO thin films

Multiferroic BFO/PZT multilayer films were fabricated by spin-coating method on the (1 1 1)Pt/Ti/SiO₂/Si substrate alternately using PZT(30/70), PZT(70/30) and BFO alkoxide solutions. The structural and ferroelectric properties were investigated for uncooled infrared detector applications. The coating and heating procedure was repeated six times to form BFO/PZT multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as Bi₂Fe₄O₃. The thickness of BFO/PZT multilayer film was about 200–220 nm. The ferroelectric properties such as dielectric constant, remnant polarization and pyroelectric coefficient were superior to those of single composition BFO film, and those values for BFO/PZT(70/30) multilayer film were 288, 15.7 μC/cm² and 9.1 × 10^?9 C/cm² K at room temperature, respectively. Leakage current density of the BFO/PZT(30/70) multilayer film was 3.3 × 10^?9 A/cm² at 150 kV/cm. The figures of merit, F_V for the voltage responsivity and F_D for the specific detectivity, of the BFO/PZT(70/30) multilayer film were 6.17 × 10^?11 Ccm/J and 6.45 × 10^?9 Ccm/J, respectively.