Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

Single Event Effects (SEEs) triggered by energetic heavy ions traversing a sensitive parts of electric devices have been studied using high-energy heavy ion microbeams connected with Transient Ion Beam Induced Current (TIBIC) measuring system at the Japan Atomic Energy Agency (JAEA) Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In the TIBIC system, SEE for semiconductor device, that is fast charge collection, has been observed in timescales of the order of picoseconds. In this paper, we show successful demonstration of the performance of the system, in which clear images of TIBIC map have been observed for Si pin photodiodes irradiated by 260 MeV ²⁰Ne⁷⁺ and also by 520 MeV ⁴⁰Ar¹⁴⁺ microbeams.     

Charge collection efficiency mapping of interdigitated 4H–SiC detectors

The Ion Beam Induced Charge (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H–SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.IBIC maps were obtained using focused proton beams with energies of 0.9 and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact).These different experimental conditions have been modeled using a two-dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent agreement between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.     

A simple way to analyze infrared reflectivity spectra of p-type Hg0.78Cd0.22Te implanted in various conditions

Different ion-implanted p-type Hg_0.78Cd_0.22Te samples were analyzed by infrared reflectivity in the 2–20 μm wavelength range. We show how to derive some characteristic values of the free carriers induced by ion implantation from simple models of the implanted samples. For low energy implantations (Al (320 keV)) an excess of electrons with concentration n⁺ ≈ 5 × 10¹⁷ cm⁻³ for doses 10¹² and 10¹⁴ ions cm⁻² is observed between the surface and the projected range R_p of the ions, in agreement with the well-known change of type of the free carriers induced by the ion implantation in this kind of samples. High energy α particle (0.8 and 2 MeV, 10¹⁴ ions cm⁻²) implantations lead to a pronounced inhomogeneous concentration of free electrons with n⁺ ≈ 9.2 × 10¹⁶ cm⁻³ between the surface and R_p where a negligible amount of defects due to the nuclear energy loss is formed, and n⁺ ≈ 1.6 × 10¹⁷ cm⁻³ between R_p and R_p + ΔR_p, ΔR_p being the longitudinal straggling, where the defect production rate through the nuclear energy loss mechanism is maximum.     

Measurement of (n, n′) reaction cross-sections of 79Br, 90Zr, 197Au and 207Pb with pulsed d-D neutrons

Activation cross-sections for the (n, n′) reaction were measured by means of the activation method at neutron energies of 3.1 and 2.54 MeV using a pulsed neutron beam. The target nuclei were ⁷⁹Br, ⁹⁰Zr, ¹⁹⁷Au, and ²⁰⁷Pb whose half-lives were between 0.8 and 8 s. The value of the ⁹⁰Zr(n, n′) ^90mZr reaction was obtained for the first time. In order to confirm the pulsed neutron beam measuring method, the cross-section data of ⁷⁹Br and ¹⁹⁷Au were compared with previous data obtained using a pneumatic sample transport system. The results of this comparison were in agreement within the range of experimental error. The d-D neutrons were generated by bombarding a deuterated titanium target with a 350-keV d⁺-beam at the 80° beam line of the Fusion Neutronics Source (FNS) at the Japan Atomic Energy Research Institute. In order to obtain reliable activation cross-sections, careful attention was paid to correct the efficiency for a volume source, and the self-absorption of gamma rays in irradiated samples. The systematics of the (n, n′) reaction at a neutron energy of 3.0 MeV, which can predict cross-section of (n, n′) reaction with an accuracy of 50%, was proposed for the first time on the basis of our data.     

Quantifying helium distribution in dual-ion beam irradiated SiCf/SiC composites by electron energy loss spectroscopy

In this study, we report a method to quantify the helium distribution in the SiC_f/SiC composites, which are used as the first-wall materials of fusion reactor. The helium-bubble formation in Hi-Nicalon Type-S (HNS) was observed in the irradiated SiC_f/SiC composites at a level of 100 dpa and at 800 °C and 1000 °C, respectively. We applied transmission electron microscopy and electron energy loss spectroscopy to investigate the helium-gas-bubbles-formation mechanisms. To simulate the practical first-wall environment of Deuterium–Tritium (D–T) fusion reactor, a dual-ion beam (6 MeV Si³⁺ and 1.13 MeV He⁺) was performed to irradiate the SiC_f/SiC composites. The relationship between the energy shift of He K-edge and the radius of the bubble of the SiC composites was estimated by electron energy loss spectroscopy analysis. The results show that all of the helium atoms irradiated at 1000 °C and formed the bubbles. On the other hand, at 800 °C, only 25.5% of the helium atoms form the helium bubbles. A clear thermal-dependent formation mechanism is found.     

Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

The spectral deterioration of Hamamatsu S5821 silicon photodiodes for ion types and energies frequently used in Ion Beam Analysis was investigated. Focused proton beams with energies 430 keV and 2 MeV were applied to generate radiation damage via an area selective ion implantation in unbiased diodes at room temperature. The variations of spectroscopic features were measured “in situ” by Ion Beam Induced Current (IBIC) method as a function of fluence, within the 10⁹–5 × 10¹² ion/cm² range and diode bias voltages, between 0 and 100 V.An empirical model has been developed to describe the radiation damage. Equations are derived for the variations of the normalized peak position and peak width. The derived empirical equations are physically correct, as far as they account for the superposition of the influence of charge carrier trapping by native and radiation-induced defects and for the effect of charge carrier velocity saturation with electric field strength, as well.     

Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon

A silicon wedge mask with thickness varying from approximately 5 μm to a few hundred μm has been used for converting the depth distribution of defect concentration induced by 4 MeV H⁺ ion implantation in silicon to a lateral scale on the surface, i.e. the distance from the edge of the wedge mask. Thus, using proper devices fabricated on bulk Si prior to ion implantation, depth profiles of the generation lifetime of minority charge carriers and of the different defect densities can be measured by the transient capacitance method and by Deep Level Transient Spectroscopy (DLTS), respectively. The distribution of lifetime follows well that of the implantation induced vacancies calculated by the TRIM code in the applied dose range (from 1 × 10¹⁰ to 3 × 10¹¹ H⁺/cm²). The correlation between implantation dose and lifetime decrease is also discussed.     

Measurements and model calculations of activation cross sections for 232Th(n,2n)231Th reaction between 13.57 and 14.83 MeV neutrons

In this study, activation cross sections were measured for the reaction of ²³²Th(n,2n)²³¹Th (T_1/2 = 25.5 h) by using neutron activation technique at six different neutron energies from 13.57 and 14.83 MeV. Neutrons were produced via the ³H(²H,n)⁴He reaction using SAMES T-400 neutron generator. Irradiated and activated high purity Thorium foils were measured by a high-resolution γ-ray spectrometer with a high-purity Germanium (HpGe) detector. In cross section measurements, the corrections were made for the effects of γ-ray self-absorption in the foils, dead-time, coincidence summing, fluctuation of neutron flux, low energy neutrons. For this reaction, statistical model calculation, which the pre-equilibrium emission effects were taken into consideration, were also performed between 13.57 and 14.83 MeV energy range. The cross sections were compared with previous works in literature, with model calculation results, and with evaluation data bases (ENDF/B-VII, ENDF/B-VI, JEFF-3.1, JENDL-4.0, JENDL-3.3, and ROSFOND-2010).     

Elastic scattering of 7Li + 27Al at several angles in the 7–11 MeV energy range

Elastic cross sections for the ⁷Li + ²⁷Al system were measured at laboratory energies between 7 and 11 MeV in steps of 0.25 MeV, and angles between 135° and 170° in steps of 5°. Excitation functions for the elastic scattering were measured using an array of eight Si surface-barrier detectors whereas a solid-state telescope was used to estimate and subtract background from other reactions. Contamination from α particles arising from the ⁷Li breakup process at E_lab ? 10 MeV makes the use of these energies inadvisable for RBS applications. The present results are compared with previous data obtained at 165° (E_lab ? 6 MeV), 140° and 170° (E_lab ? 8 MeV). The experimental data were analyzed in terms of the Optical Model. Two different energy-independent potentials were found. These optical potentials allow an interpolation with physical meaning to other energies and scattering angles. The experimental cross sections will be uploaded to the IBANDL database.     

Evaluation of soft error rates using nuclear probes in bulk and SOI SRAMs with a technology node of 90 nm

The difference of soft error rates (SERs) in conventional bulk Si and silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm has been investigated by helium ion probes with energies ranging from 0.8 to 6.0 MeV and a dose of 75 ions/μm². The SERs in the SOI SRAM were also investigated by oxygen ion probes with energies ranging from 9.0 to 18.0 MeV and doses of 0.14–0.76 ions/μm². The soft error in the bulk and SOI SRAMs occurred by helium ion irradiation with energies at and above 1.95 and 2.10 MeV, respectively. The SER in the bulk SRAM saturated with ion energies at and above 2.5 MeV. The SER in the SOI SRAM became the highest by helium ion irradiation at 2.5 MeV and drastically decreased with increasing the ion energies above 2.5 MeV, in which helium ions at this energy range generated the maximum amount of excess charge carriers in a SOI body. The soft errors occurred by helium ions were induced by a floating body effect due to generated excess charge carriers in the channel regions. The soft error occurred by oxygen ion irradiation with energies at and above 10.5 MeV in the SOI SRAM. The SER in the SOI SRAM gradually increased with energies from 10.5 to 13.5 MeV and saturated at 18 MeV, in which the amount of charge carriers induced by oxygen ions in this energy range gradually increased. The computer calculation indicated that the oxygen ions with energies above 13.0 MeV generated more excess charge carriers than the critical charge of the 90 nm node SOI SRAM with the designed over-layer thickness. The soft errors, occurred by oxygen ions with energies at and below 12.5 MeV, were induced by a floating body effect due to the generated excess charge carriers in the channel regions and those with energies at and above 13.0 MeV were induced by both the floating body effect and generated excess carriers. The difference of the threshold energy of the oxygen ions between the experiment and the computer calculation might be due to the difference between the designed and real structures.     

Micro-Raman depth profile investigations of beveled Al+-ion implanted 6H-SiC samples

6H-SiC single crystals were implanted with 450 keV Al⁺-ions to a fluence of 3.4 × 10¹⁵ cm^?2 , and in a separate experiment subjected to multiple Al⁺ implantations with the four energies: 450, 240, 115 and 50 keV and different fluences to obtain rectangular-like depth distributions of Al in SiC. The implantations were performed along [0 0 0 1] channeling and non-channeling (“random”) directions. Subsequently, the samples were annealed for 10 min at 1650 °C in an argon atmosphere. The depth profiles of the implanted Al atoms were obtained by secondary ion mass spectrometry (SIMS). Following implantation and annealing, the samples were beveled by mechanical polishing. Confocal micro-Raman spectroscopic investigations were performed with a 532 nm wavelength laser beam of a 1 μm focus diameter. The technique was used to determine precisely the depth profiles of TO and LO phonon lines intensity in the beveled samples to a depth of about 2000 nm. Micro-Raman spectroscopy was also found to be useful in monitoring very low levels of disorder remaining in the Al⁺ implanted and annealed 6H-SiC samples. The micro-Raman technique combined with sample beveling also made it possible the determination of optical absorption coefficient profiles in implanted subsurface layers.     

Thermal conductivity of SiC after heavy ions irradiation

In this study, we performed irradiation experiments on α-SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence of 5 × 10¹⁴ ions cm^?2). This energy results in an irradiated layer of about 9.6 μm for SiC. TEM and Raman analyses reveal a graded damaged material. In the electronic interactions domain SiC is weakly damaged whereas it becomes fully amorphous in the nuclear interactions domain. According to the structural examinations, the irradiated SiC is considered as a multilayered material. Thermal conductivity in both electronic and nuclear interactions domains is measured as a function of temperature and annealing temperature. It appears that such an approach is reliable to estimate thermal conductivity of ceramics under neutron irradiation.     

Stopping cross-section and energy straggling of protons in SiC obtained by nuclear resonant reaction of protons with 12C and 28Si

In order to evaluate stopping cross-section and energy straggling of protons in compound material SiC and its constituents C and Si, resonant backscattering spectra have been measured using proton beams in an energy range 4.9–6.1 MeV per a 100 keV step. We have observed two sharp nuclear resonances at proton energies of 4.808 MeV by ¹²C and 4.879 MeV by ²⁸Si. By systematic analyses of the resonance peak profiles, i.e., energy shift of the peak position and broadening of the peak width, the values of the stopping cross-section and the energy straggling have been deduced to be compared with SRIM-2006 and Bohr’s prediction.     

Characterisation of inhomogeneous inclusions in Darwin glass using ion beam analysis

Darwin glass is an impact glass resulting from the melting of local rocks during the meteorite impact that formed the 1.2 km diameter Darwin Crater in western Tasmania. These glass samples have small spheroidal inclusions, typically a few tens of microns in diameter, that are of great interest to the geologists. We have analysed one such inclusion in detail with proton microbeam ion beam analysis (IBA). A highly heterogeneous composition is observed, both laterally and in depth, by using self-consistent fitting of photon emission and particle backscattering spectra. With various proton energies near 2 MeV we excite the ¹²C(p,p)¹²C resonance at 1734 keV at various depths, and thus we can probe both the C concentration, and also the energy straggling of the proton beam as a function of depth which gives information on the sample structure. This inclusion has an average composition of (C, O, Si) = (28, 56, 16) mol% with S, K, Ca, Ti and Fe as minor elements and Cr, Mn, Ni, Cu, Zn and Br as trace elements. This composition includes, at specific points, an elemental depth profile and a density variation with depth consistent with discrete quartz crystals a few microns in size.     

Effect of Li3+ irradiation on the transport properties of La0.7Pb0.3MnO3 type CMR material

We report the low temperature (below the metal–insulator transition temperature T_im) resistivity and magnetoresistance (MR) behavior of 50 MeV Li³⁺ beam irradiated La_0.7Pb_0.3MnO₃ for three different fluences. Ion beam irradiation causes a decrease of T_im leading to the increase of insulating regime. Resistivity data of the unirradiated as well as irradiated samples fitted well with an equation of the form ρ = ρ₀ + ρ_2.5T^2.5 which indicates predominant contribution from the electron–magnon interaction (second term). The temperature dependent MR data of samples irradiated with different ion fluences follow the simple relation [MR = a + b/(T + C)] showing appreciable effect of radiation on the parameters a, b and C. The physical significance of the radiation effect on these parameters is not yet very clear.     

Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films

The effect on the crystalline structure and ferroelectric properties of ion implantation in SrBi₂Ta₂O₉(SBT) ferroelectric thin films has been investigated. 25 keV H⁺, 140 keV O⁺ with doses from 1 × 10¹⁴/cm² to 3 × 10¹⁵/cm² were implanted into the Sol–Gel prepared SBT ferroelectric thin films. The X-ray diffraction patterns of SBT films show that no difference appears in the crystalline structure of as-H⁺-implanted SBT films compared with as-grown films, H⁺ and O⁺ co-implanted SBT films show an obvious degradation of crystalline structure. Ferroelectric properties measurements indicate that both remnant polarization and coercive electric field of H⁺ implanted SBT films decrease with increasing the implantation dose. The disappearance of ferroelectricity was found in the H⁺, O⁺ co-implanted SBT films at room temperature. The great recovery of hydrogen-induced degradation in SBT films was obtained with O⁺ implantation using a heat-target-implantation technique.     

Characterisation of Ni+ implanted PEEK,PET and PI

Polyimide (PI), polyetheretherketone (PEEK) and polyethyleneterephthalate (PET) were implanted with 40 keV Ni⁺ ions at room temperature at fluences ranging from 1.0 × 10¹⁶ to 1.5 × 10¹⁷ ions cm^?2 and with ion current density varying between 4 and 10 μA cm^?2. The depth profiles of the implanted Ni atoms determined by the RBS technique were compared with those predicted by the SRIM and TRIDYN codes. Hydrogen depletion as a function of the ion fluence was determined by the ERDA technique, and the compositional and structural changes of the polymers were characterised by the UV–vis and XPS methods. The implanted profiles differed significantly from those predicted by the SRIM code while the lower fluences were satisfactorily described by the TRIDYN simulation. A significant hydrogen release from the polymer surface layer was observed along with significant changes in the surface layer composition. The UV–vis results indicated an increase in the concentration and conjugation of double bonds.     

SHI induced re-crystallization of Ge implanted SiO2 films

Ge nanocrystals embedded in SiO₂ matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO₂ films. In the present study, 400 keV Ge⁺ ions were implanted into SiO₂ films at dose of 3 × 10¹⁶ ions/cm² at room temperature. The as-implanted samples were irradiated with 150 MeV Ag¹²⁺ ions with various fluences. Similarly 400 keV Ge⁺ ions implanted into Silicon substrate at higher fluence at 573 K have been irradiated with 100 MeV Au⁸⁺ ions at room temperature (RT). These samples were subsequently characterized by XRD and Raman to understand the re-crystallization behavior. The XRD results confirm the presence of Ge crystallites in the irradiated samples. Rutherford backscattering spectrometry (RBS) was used to quantify the concentration of Ge in the SiO₂ matrix. Variation in the nanocrystal size as a function of ion fluence is presented. The basic mechanism of ion beam induced re-crystallization has been discussed.     

Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

Metastable pseudomorphic Ge_0.06Si_0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (1 0 0) substrates were implanted at room temperature by 70 keV BF₂⁺ ions with three different doses of 3 × 10¹³, 1 × 10¹⁴, and 2.5 × 10¹⁴ cm⁻². The implanted samples were subsequently annealed at 800°C and 900°C for 30 min in a vacuum tube furnace. Observed by MeV ⁴He channeling spectrometry, the sample implanted at a dose of 2.5 × 10¹⁴ BF₂⁺ cm⁻² is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge_0.06Si_0.94 samples become pronounced as the dose increases. Only the samples implanted at 3 × 10¹³ cm⁻² do not visibly degrade nor relax during anneal at 800°C . In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 800°C for 30 min after implantation to a dose of 2.5 × 10¹⁴ cm⁻². It is concluded that such a low dose of 3 × 10¹³ BF₂⁺ cm⁻² can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900°C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.     

The effect of neutron irradiation dose on vacancy defect accumulation and annealing in pure nickel

In order to investigate the dose dependence of vacancy defect evolution in nickel, specimens of high-purity Ni were neutron-irradiated at ～330 K in the IVV-2M reactor (Russia) to fluencies in the range of 1 × 10²¹–1 × 10²³ n/m² (E > 0.1 MeV) corresponding to displacement dose levels in the range of about 0.0001–0.01 dpa and subsequently stepwise annealed to about 900 K. Ni was characterized both in as-irradiated state as well as after post-irradiation annealing by positron annihilation spectroscopy. The formation of three-dimensional vacancy clusters (3D-VCs) in cascades was observed under neutron irradiation, the concentration of 3D-VCs increases with increasing dose level. 3D-VCs collapse into secondary-type clusters (stacking fault tetrahedra (SFTs), and vacancy loops) during stepwise annealing at 350–450 K. It is shown that the thermal stability of SFTs grow with increasing dose level, probably, it is due to growth of the average SFT size during annealing. The results of annealing experiments on electron-irradiated Ni at 300 K are indicated in the paper, for comparison. We also have briefly discussed the positron response to the SFT-like structures.