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1.
In this study, we report the fabrication of cadmium-doped indium sulfide thin films (In2S3:Cd) using a low-cost nebulizer-aided spray pyrolysis process at 350 °C on glass substrates for photo-sensing applications. The impact of 0, 2, 4, and 8 wt% cadmium concentrations on the structure, morphology, optical properties, and photo-sensing capabilities of In2S3 thin films were examined systematically. From X-ray diffraction (XRD) analysis, the major peak is located in the (103) plane for all Cd-doped In2S3 thin film samples, and the maximum crystallite size for the 4 wt% sample is 59 nm. The field emission scanning electron microscope (FESEM) image revealed a homogenous large-grained surface of Cd-doped In2S3 film that completely covered the substrate. UV–Vis absorption analysis demonstrated good absorption for all thin film samples in the visible and ultraviolet regions of the electromagnetic spectrum, particularly, the 4% Cd-doped concentration showed excellent absorption as is observed from Tauc relation. The highest PL intensity at 680 nm was observed for the sample coated with 4 wt% of Cd. Under UV light, the I–V behavior depicts a light current of 1.06?×?10–6 A for a 5 V bias voltage. The In2S3: Cd (4%) sample had the highest responsivity of 2.12?×?10?1A/W and a detectivity of 1.84?×?1011 Jones, with a high EQE of 50%. The study manifests that the developed Cd (4%)-doped In2S3 thin film sample might be better suited for the application of photodetectors. 相似文献
2.
Two routes have been proposed for the synthesis of In 2O 3 powders from InCl 3•4H 2O and thiourea. One route involved a two-step procedure (that is, firstly, In 2S 3 clusters constructed with mainly nanoflakes were synthesized by heating the mixture of InCl 3•4H 2O and thiourea in air from room temperature to 200 °C, coupled with a subsequent washing treatment; secondly, In 2O 3 was obtained by calcining the In 2S 3 clusters in air at 600 °C for 6 h), and the other route was a one-step procedure (that is, In 2O 3 was synthesized directly by calcining the mixture of InCl 3•4H 2O and thiourea in air at 600 °C for 6 h). The resultant products were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electronic microscope and room temperature photoluminescence (RT-PL) spectra. It was observed that the In 2O 3 nanocrystals obtained via the two-step procedure exhibited PL peaks at about 453 and 471 nm, corresponding to the defeat-related emission; while the In 2O 3 submicron polyhedral crystals obtained via the one-step procedure and In 2O 3 pyramids obtained by calcining the only InCl 3•4H 2O in air at 600 °C for 6 h displayed a PL band centered at around 338 nm, corresponding to the band edge emission. 相似文献
3.
Heterostructured In 2O 3/BiOCl powders were synthesized by chemical coprecipitation method at room temperature followed by thermal treatment at 400 °C for 2 h. The TEM results confirmed the formation of sheet-like BiOCl nanostructures with the thickness of ca. 5–7 nm. In order to investigate the effect of In 2O 3 on the photocatalytic activity of heterostructured powders, the amount of In 2O 3 was varied from 0 wt% to 14 wt%. Adsorption and photocatalytic activity of the samples were evaluated for the degradation of Rhodamine B (RhB) in the dark and under visible light irradiation, respectively. The heterostructured In 2O 3/BiOCl powders showed high adsorption capacity and enhanced photocatalytic activity compared to P25 and pure BiOCl. Based on the results obtained in this study, the mechanism for the enhancement of photocatalytic activity of heterostructured In 2O 3/BiOCl powders is discussed. 10 wt% In 2O 3/BiOCl composite also exhibited good cycle performance for the degradation of RhB under visible light irradiation. 相似文献
4.
Urchin-like α-Fe 2O 3 superstructures have been deposited on Si substrate using thermal decomposition FeCl 3 solution at 200–600 °C in the oven. The morphologies and structures of the synthesized urchin-like superstructures have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). The results show that urchin-like α-Fe 2O 3 superstructures were a polycrystal with the rhombohedral structure and typical diameters of 16–20 nm and lengths up to 1.0 μm. The as-prepared α-Fe 2O 3 superstructures have a high Brunauer–Emmett–Teller (BET) surface area of about 60.24 m 2/g. The photoluminescence spectrum of the urchin-like α-Fe 2O 3 superstructures consists of one weak emission peak at 548 nm (2.26 eV). A possible new mechanism for the formation of the urchin-like superstructures was also preliminarily discussed. 相似文献
5.
In 2O 3 nanorods were prepared by sol–gel technique with polyethylene octyl phenyl ther (OP-10) controlling their morphology and were characterized by TEM, TG-DSC and XRD. The results indicated that In 2O 3 nanorods had the length of about 120 nm and the diameter of about 20 nm. The precursor was In 2O(OH) 4 dry gelatin which was formed by partly dehydrating of In(OH) 3 molecules. The influencing factors and growth mechanism were discussed. The geometry arrangement parameter P of OP-10 was in 1/3–1/2 through calculating, which conformed the shape of claviform micelle. 相似文献
6.
CuIn(S,Se) 2(CISSe) thin films have been prepared onto soda-lime-glass (SLG) substrates by selenization and sulfurization of magnetron sputtered Cu–In precursors. The results indicate that the properties of the CISSe films are strongly dependent on the post-annealing treatment. After annealing at 400 °C for 20 min, the CISSe films have formed tetragonal (chalcopyrite) crystal structure and the diffraction peaks of the films shift systematically to the left with the temperature varying from 400 °C to 500 °C. EDAX study reveals that the compositions of CISSe films are Cu 0.83In 1.17S 1.67Se 0.3, Cu 0.86In 1.13S 1.61Se 0.4 and Cu 0.82In 1.15S 1.54Se 0.49 after annealing at 400 °C, 450 °C and 500 °C, respectively. The direct optical band gaps of the films slightly decrease from 1.44 ev to 1.32 ev with the increase of the temperature from 400 °C to 500 °C, and the optical absorption coefficient is over 10 5 cm −1. The films annealed at 400 °C–500 °C are all found to be p-type and the resistivity is almost 10 −2–10 −3 Ω cm. The carrier mobility of the film at 500 °C is almost as high as 1.701 cm 2/V S. 相似文献
7.
Nanostructured indium oxide (In 2O 3) thin films were prepared by spray pyrolysis (SP) technique. X-ray diffraction (XRD) was used to investigate the structural properties and field emission scanning electron microscopy (FESEM) was used to confirm surface morphology of In 2O 3 films. Measurement of electrical conductivity and gas sensing performance were conducted using static gas sensing system. Gas sensing performance was studied at different operating temperature in the range of 25–150 °C for the gas concentration of 500 ppm. The maximum sensitivity ( S = 79%) to H 2 S was found at lower temperature of 50 °C. The quick response (4 s) and fast recovery (8 s) are the main features of this film. 相似文献
8.
Amorphous indium oxide (In 2O 3) and 10-wt% SnO 2 doped In 2O 3 (ITO) thin films were prepared by pulsed-laser deposition. These films were crystallized upon heating in vacuum at an effective heating rate of 0.00847 °C/s, while the evolution of the structure was observed by in situ X-ray diffraction measurements. Fast crystallization of the films is observed in the temperature ranges 165–210 °C and 185–230 °C for the In 2O 3 and ITO films, respectively. The crystallization kinetics is described by a reaction equation, with activation energies of 2.31 ± 0.06 eV and 2.41 eV and order of reactions of 0.75 ± 0.07 and 0.75 for the In 2O 3 and ITO films, respectively. The structures of the films observed here during heating are compared with those obtained upon film growth at different temperatures. The resistivity of the films depends on the evolution of the structure, the oxygen content and the activation of tin dopants in the films. A low resistivity of 5.5 × 10 −4 Ω cm was obtained for the In 2O 3 and ITO films at room temperature, after annealing to 250 °C the resistivity of the ITO film reduces to 1.2 × 10 −4 Ω cm. 相似文献
9.
In this work, we present the preparation of CuSbS 2 thin films of approximately 850 nm in thickness by heating glass/Sb 2S 3/Cu layers in low vacuum and their application in PV structures: Glass/SnO 2:F/n-CdS/p-CuSbS 2/C/Ag. The Sb 2S 3 thin films were chemically deposited from a solution containing SbCl 3 and Na 2S 2O 3 at 40 °C on well cleaned substrates. Copper thin films of 50 nm were thermally evaporated on Sb 2S 3 films of thickness ~600 and 800 nm and the glass/Sb 2S 3/Cu precursor layers were heated in vacuum at 300 and 350 °C for 1 h. Structural, morphological, optical and electrical characterizations of the annealed thin films were analyzed by X-ray diffraction, Atomic force microscopy, UV–Vis spectrometry and photoresponse measurements. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. Photovoltaic devices were prepared using CuSbS 2 thin films as absorber and chemical bath deposited CdS thin films as window layer on FTO coated glass substrates. The photovoltaic parameters of the devices were evaluated from the corresponding J–V curves, yielding J sc, V oc and FF values in the range of 1.03–1.55 mA/cm 2, 250–294 mV and 0.46–0.57 respectively, performed using a solar simulator under illumination of AM1.5 radiation. 相似文献
10.
The pseudo-binary In 2O 3–SnO 2 phase diagram has been determined in the range of 1000–1650 °C using electron probe microanalysis (EPMA) and x-ray diffraction
(XRD) analysis of solid-state sintered samples. The solubility of SnO 2 in In 2O 3 was found to range from 1.3 mol% at 1000 °C to a maximum of 13.1 mol% at 1650 °C, indicating that commercial SnO 2-doped In 2O 3 thin films are thermodynamically metastable. In 2O 3 was found to have negligible solubility in SnO 2 throughout the temperatures examined. In this study two intermediate compounds, In 4Sn 3O 12 and In 2SnO 5, were found. Each phase was found to be stable only at high temperatures, decomposing eutectoidally at 1325 and 1575 °C, respectively.
This is believed to be the first report of the high temperature phase In 2SnO 5, which is attractive for future research as a transparent conducting oxide. 相似文献
11.
In 2S 3–SiO 2 nanocomposite films (with molar ratios of In 2S 3:SiO 2 = 15:85, 10:90 and 5:95) were prepared on quartz substrates by sol–gel method. Highly confined nanoparticles of In 2S 3 (radius ∼ 1.8–7 nm) were obtained in SiO 2 matrix, indicating SiO 2 to be a good capping agent for the nanoparticles. The films were annealed in air at different temperatures (473–623 K) and characterized by optical, microstructural and photoluminescence measurements. XRD studies showed that annealing in air upto 623 K leads to the formation of oxide free In 2S 3 nanoparticles. The broad Photoluminescence peak observed at ∼353 nm showed a marked blue shift associated with a decrease in intensity with increasing concentration of In 2S 3 in the matrix. 相似文献
12.
Direct hydrogenation of CO 2 to methanol using green hydrogen has emerged as a promising method for carbon neutrality, but qualifying catalysts represent a grand challenge. In 2O 3/ZrO 2 catalyst has been extensively applied in methanol synthesis due to its superior activity; however, the electronic effect by strong oxides-support interactions between In 2O 3 and ZrO 2 at the In 2O 3/ZrO 2 interface is poorly understood. In this work, abundant In 2O 3/ZrO 2 heterointerfaces are engineered in a hollow-structured In 2O 3@ZrO 2 heterostructure through a facile pyrolysis of a hybrid metal–organic framework precursor MIL-68@UiO-66. Owing to well-defined In 2O 3/ZrO 2 heterointerfaces, the resultant In 2O 3@ZrO 2 exhibits superior activity and stability toward CO 2 hydrogenation to methanol, which can afford a high methanol selectivity of 84.6% at a conversion of 10.4% at 290 °C, and 3.0 MPa with a methanol space-time yield of up to 0.29 g MeOH g cat−1 h −1. Extensive characterization demonstrates that there is a strong correlation between the strong electronic In 2O 3–ZrO 2 interaction and catalytic selectivity. At In 2O 3/ZrO 2 heterointerfaces, the electron tends to transfer from ZrO 2 to In 2O 3 surface, which facilitates H 2 dissociation and the hydrogenation of formate (HCOO*) and methoxy (CH 3O*) species to methanol. This study provides an insight into the In 2O 3-based catalysts and offers appealing opportunities for developing heterostructured CO 2 hydrogenation catalysts with excellent activity. 相似文献
13.
BaTi 2O 5 nanobelts with 60–100 nm in thickness, 200–300 nm in width, and several micrometers in length have been successfully synthesized through a two-step hydrothermal reaction. Sodium titanate nanobelts are synthesized via the reaction of titania nanoparticles and NaOH aqueous solution at 180 °C for 24 h. After the reaction, resulting sodium titanate nanobelts are ion-exchanged with barium ions and then treated at 180 °C for 60 h under alkaline condition, BaTi 2O 5 nanobelts are formed. The morphologies and crystal structures of sodium titanate and BaTi 2O 5 nanobelts are characterized by field-emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM) and X-ray powder diffractometer (XRD), respectively. 相似文献
14.
The cubic β-In 2S 3 hollow nanospheres was fabricated via two-step solvothermal approaches using InCl 3·4H 2O, CS 2, and thioacetamide (C 2H 5NS) as the starting materials. The as-prepared cubic β-In 2S 3 possessed hollow nanosphere structures, whose outward diameters and shells are −75 and 20 nm, respectively. The samples were characterized by XRD, FESEM, TEM, SAED, and HRTEM. The optical properties of the cubic β-In 2S 3 hollow nanospheres were also investigated. UV–vis (280 nm) and PL (367 nm) spectra indicate that there exists obvious blue shift compared with the In 2S 3 bulk materials. 相似文献
15.
A molten salt method to synthesize SnS 2 nanoplates, in a melt of tin dichloride and thiourea in air at 250–280 °C for 0–5 h, coupled with a subsequent washing treatment using distilled water, is demonstrated. The X-ray diffraction, Raman spectra, and field emission scanning electron microscope images disclosed that all the obtained products were phase pure hexagonal SnS 2 nanoplates, of 20–70 nm thickness. 相似文献
16.
Molybdenum-doped indium oxide nanopowders were synthesized via mechanical alloying with subsequent annealing at a relatively low temperature of 600 $^{\circ}$ C. The morphologies and crystal structures of the synthesized nanopowders were examined by using scanning electron microscopy (SEM) and X-ray diffraction patterns. X-ray diffraction pattern of the milled mixture shows the presence of both In 2O 3 phase and Mo element. The presence of broad peaks in the pattern confirms that the synthesized powders are nanosized. The X-ray diffraction of annealed samples at 600 $^{\circ}$ C shows the absence of Mo peaks revealing that the Mo was incorporated into the crystal lattices of In 2O 3. Interestingly, it was observed that the diffraction peaks were still broad in the annealed samples indicating the single phase at the nanoscale. From the XRD pattern, the calculated crystallite sizes were in the range of 12–18 nm. Magnetic properties of the synthesized Mo-doped In 2O 3 nanopowders were examined and it was found that the obtained nanopowders possess diamagnetic properties. 相似文献
17.
CuO, Fe 2O 3 and CuO–Fe 2O 3 samples supported on cordierite (commercial grade) were prepared by wet impregnation method using finely powdered support material, copper and/or iron nitrates. The extent of loading was varied between 5 and 20 wt.% CuO, Fe 2O 3 or CuO–Fe 2O 3. The physicochemical, surface and catalytic properties of the various solids calcined at 350–700 °C were investigated using XRD, EDX, nitrogen adsorption at 77 K and CO-oxidation by O 2 at 220–280 °C.The results obtained revealed that the employed cordierite preheated at 350–700 °C was well-crystallized magnesium aluminum silicate (Mg 2Al 4Si 5O 18). Loading of 20 wt.% CuO or Fe 2O 3 on the cordierite surface calcined at 350 °C led to a partial dissolution of the added oxides in the support lattice forming solid solutions. The other portions remained as separate nanocrystalline CuO or Fe 2O 3 phases. The dissolved portions of the transition metal oxide increased upon increasing the calcination temperature from 350 to 500 °C. Loading of 20 wt.% CuO–Fe 2O 3 on the cordierite surface followed by calcination at 350 °C resulted in a solid–solid interaction between some of CuO and Fe 2O 3 yielding iron cuprate Fe 2CuO 4, which decomposed at ≥500 °C yielding copper and iron oxides. The portion of Fe 2O 3 dissolved in the cordierite lattice at 500 °C is twice that of CuO.The SBET of cordierite increased several times by treating with small amounts of Fe 2O 3 or CuO. The increase was more pronounced by treating with Fe 2O 3. The catalytic activity of the cordierite increased progressively by increasing the amount of oxide(s) added. The mixed oxides system supported on cordierite and calcined at 350–700 °C showed catalytic activities much bigger than those measured for the individual supported systems. The synergistic effect manifested in case of solids calcined at 350 °C was attributed to the formation of surface iron cuprate. The significant increase in surface concentration of copper species on top surface layers of the solids treated with mixtures of copper and ferric oxides could be responsible for the synergistic effect for the mixed oxide catalysts calcined at 500 or 700 °C. 相似文献
18.
The aluminium oxide/zirconium oxide (Al 2O 3/ZrO 2) nanolaminate thin films (5/20 nm with 4 bilayers, 5/15 nm with 5 bilayers and 5/10 nm with 7 bilayers) were deposited on Si (100) and quartz substrates at an optimized oxygen partial pressure of 3 × 10 −2 mbar at room temperature using pulsed laser deposition. The multilayer films were characterized using X-ray diffraction, X-ray reflectivity, Atomic force microscopy and UV–Visible spectroscopy. The X-ray diffraction studies showed amorphous nature for 5/20 nm film, whereas 5/15 nm and 5/10 nm multilayers showed only tetragonal zirconia at room temperature. X-ray reflectivity studies showed the Kiessig fringes and Bragg peaks, indicating the well defined formation of individual layers and bilayer periodicity in the multilayer films. The AFM studies showed the RMS roughness values of 0.7 nm, 0.9 nm and 1.1 nm for 5/10 nm, 5/15 nm and 5/20 nm multilayers respectively. The optical performance of the combined Al 2O 3/ZrO 2 nanolaminates showed that the refractive indices of the films increased from 1.75 to 1.99 with the decrease of ZrO 2 layer thickness from 20 to 10 nm. 相似文献
19.
Ultrafine Co–30 wt.%NbC composite powder with a core/rim structure was synthesized via a direct reduction and carbonization process at 950 °C for 2 h under a vacuum condition. Results show that the particle size of the composite powder is about 150–200 nm. The size of a NbC core is about 110–140 nm and the thickness of its rim is 30 nm approximately. Comparative experiments and thermodynamic calculations indicate that the carbothermal process was greatly improved by the participation of Co 3O 4 in the raw material. 相似文献
20.
In this work, self-assembled monolayers (SAMs) of octadecyltrichlorosilane (OTS) were applied to induce the nucleation and
growth of the antimony sulfide (Sb 2S 3) films on the functional ITO glass substrate at low temperature. The structure, morphology, and optical properties of the
Sb 2S 3 films were investigated by X-ray diffraction, scanning electron microscopy, X-ray energy dispersive spectroscopy, and UV–vis
spectroscopy. After thermal treatment at 200 °C for 1 h in air, the orthorhombic Sb 2S 3 was formed as a predominant phase in the deposited thin films. When the deposited films were thermally treated at 400 °C
for 1 h in air, the orthorhombic Sb 2S 3 was decomposed and a cubic Sb 2O 3 was formed. The optical band energies of the as-deposited and thermally treated Sb 2S 3 films at 200 °C for 1 h in air and nitrogen were found to be 2.05 eV, 1.77, and 1.76 eV, respectively. As chemical templates,
the OTS-functionalized SAMs played an important role in controlling the nucleation and growth of Sb 2S 3 films at low temperature. The results obtained from different preparation parameters applied in the present work will allow
controlling the growth of the Sb 2S 3 films with uniform surface. 相似文献
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