Structural and electrical properties of brush plated ZnTe films

Zinc telluride thin films were deposited by the brush plating technique at a potential of −0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90 °C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 10¹⁴–10¹⁵ cm⁻³ with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm² V⁻¹ s⁻¹.     

Substrate temperature effect on structural,optical and electrical properties of vacuum evaporated SnO2 thin films

Tin oxide (SnO₂) thin films were deposited on glass substrates by thermal evaporation at different substrate temperatures. Increasing substrate temperature (T_s) from 250 to 450 °C reduced resistivity of SnO₂ thin films from 18×10⁻⁴ to 4×10⁻⁴▒ Ω ▒cm. Further increase of temperature up to 550 °C had no effect on the resistivity. For films prepared at 450 °C, high transparency (91.5%) over the visible wavelength region of spectrum was obtained. Refractive index and porosity of the layers were also calculated. A direct band gap at different substrate temperatures is in the range of 3.55−3.77 eV. X-ray diffraction (XRD) results suggested that all films were amorphous in structure at lower substrate temperatures, while crystalline SnO₂ films were obtained at higher temperatures. Scanning electron microscopy images showed that the grain size and crystallinity of films depend on the substrate temperature. SnO₂ films prepared at 550 °C have a very smooth surface with an RMS roughness of 0.38 nm.     

电子束蒸发法制备CdS多晶薄膜及其结构和光学性质

采用电子束蒸发法在玻璃衬底上制备了具有较高结晶度和优异透光性能的CdS多晶薄膜,对制备样品的结构和光学性质进行了表征。结果表明,制备薄膜属于六方相多晶结构,沿（002）晶向择优取向生长。此外,随着衬底温度的升高,样品结晶质量先提高后降低,与薄膜厚度变化有关。紫外-可见透过谱显示,随着衬底温度的升高,薄膜的光吸收边趋于陡直,但光学带隙呈现波动变化,分布在2.389-2.448 eV之间。对样品进行光致发光谱测试表明,CdS薄膜发光锋展宽严重,仅在1.60 eV附近有一个微弱的红光发射。论文对上述实验结果进行了分析和讨论。     

硫化法制备ZnS薄膜的结构和光学性能研究

采用直流反应磁控溅射法,在玻璃衬底上沉积了ZnO薄膜,然后在H2S气氛和500℃温度下退火制备了六方ZnS薄膜。利用X射线衍射仪(XRD)、UV-VIS分光光度计、扫描电子显微镜(SEM)对样品进行了表征。结果表明:ZnO经0.5 h硫化就能全部生成ZnS,适当提高硫化时间可改善ZnS的结晶性,但硫化时间超过2 h后,结晶性会有所降低;所有制得ZnS薄膜都沿c轴择优生长,其晶粒明显比ZnO更大。此外,这些ZnS薄膜在500~1 100nm波长范围内的光透过率均高达约75%,带隙为3.65~3.70 eV。     

Structural and optical properties of polycrystalline CdS thin films deposited by electron beam evaporation

Highly crystalline and transparent cadmium sulphide(CdS) films were deposited on glass substrate by electron beam evaporation technique.The structural and optical properties of the films were investigated.The X-ray diffraction analysis revealed that the CdS films have a hexagonal structure and exhibit preferred orientation along the(002) plane.Meanwhile,the crystalline quality of samples increased first and then decreased as the substrate temperature improved,which is attributed to the variation in film thickness.UV-vis spectra of CdS films indicate that the absorption edge becomes steeper and the band gap present fluctuation changes in the range of 2.389-2.448 eV as the substrate temperature increased.The photoluminescence peak of the CdS films was found to be broadened seriously and there only emerges a red emission band at 1.60 eV.The above results were analyzed and discussed.     

Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films

Nanocrystalline Zn1-x CoxO(where x varies from 0 to 0.04 in steps of 0.01) thin films were deposited onto glass substrate by the spray pyrolysis technique at a substrate temperature of 350 ℃. The X-ray diffraction patterns confirm the formation of hexagonal wurtzite structure. The crystal grain size of these films was found to be in the range of 11–36 nm. The scanning electron micrographs show a highly crystalline nanostructure with different morphologies including rope-like morphology for undoped ZnO and nanowalls and semispherical morphology for Co-doped Zn O. The transmittance increases with increasing Co doping. The optical absorption edge is observed in the transmittance spectra from 530 to 692 nm, which is due to the Co2C absorption bands corresponding to intraionic d–d shifts. The direct and indirect optical band gap energies decrease from 3.05 to 2.75 eV and 3.18 to 3.00 eV, respectively for 4 mol% Co doping. The electrical conductivity increases with increasing both the Co doping and temperature, indicating the semiconducting nature of these films. The temperature dependence thermal electromotive force measurement indicates that both undoped and Co-doped ZnO thin films show p-type semiconducting behavior near room temperature. This behavior dies out beyond 313 K and they become n-type semiconductors.     

Magnetic and photomagnetic properties of polycrystalline wide-gap semiconductor Cd1-xMnxTe thin films

The magnetic and photomagnetic properties of polycrystalline Cd_1-xMn_xTe thin films prepared by radio frequency (rf) sputtering have been investigated. Magnetization measurements were carried out using a rf superconducting quantum interference device magnetometer in the temperature range of 1.8∼300K at various magnetic fields up to 5.5 T. For temperatures above 40K, Curie-Weiss behavior was observed with a negative Weiss constant indicating predominantly antiferromagnetic interactions. Spin-glass transitions occurred at low temperatures. Photoinduced magnetization has been observed when the sample was illuminated by unpolarized light from an optical fiber.     

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

This paper reports the optimization of physical properties of cadmium telluride (CdTe) thin films with the application of thermal treatment. The films of thickness 650 nm were deposited on glass and indium tin oxide (ITO) coated glass substrates employing vacuum evaporation followed by thermal annealing in the temperature range 250–450 °C. The films were characterized using X-ray diffraction (XRD), source meter and atomic force microscopy (AFM) for structural, electrical and surface topographical properties respectively. The X-ray diffraction patterns reveal that films are polycrystalline with predominant zinc-blende structure having preferred reflection (111). The structural parameters are calculated and discussed in detail. The current–voltage characteristics show Ohmic behavior and the electrical conductivity is found to increase with annealing treatment. The AFM studies show that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing plays an important role to enhance the physical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.     

NiO薄膜的脉冲激光沉积及其结构和光学特性研究

利用脉冲激光沉积法在ITO玻璃衬底上制备了NiO薄膜,利用XRD、AFM对样品的晶体结构和表面形貌进行了表征,并对其透射光谱进行了测试,研究了衬底温度及脉冲激光能量对所制NiO薄膜的结构、形貌和光学特性的影响。结果表明:在脉冲激光能量为180 mJ、衬底温度为600~700℃条件下所制备的样品为沿(111)晶面择优取向生长的多晶NiO薄膜,薄膜结晶质量良好,表面颗粒排列均匀,可见光透射率较高,禁带宽度为3.40~3.47 eV。     

Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique

Zinc oxide (ZnO) thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 mL of deposition rate, the ZnO thin films were deposited at two different temperatures: 300 and 350 ℃. The substrates were heated using the solar cells method. The substrate was R217102 glass, whose size was 30 × 17.5 × 1 mm³. The films exhibit a hexagonal wurtzite structure with a strong (002) preferred orientation. The higher value of crystallite size is attained for sprayed films at 350 ℃, which is probably due to an improvement of the crystallinity of the films at this point. The average trans mittance of obtain films is about 90%-95%, as measured by a UV-vis analyzer. The band gap energy varies from 3.265 to 3.294 eV for the deposited ZnO thin film at 300 and 350 ℃, respectively. The electrical resistivity measured of our films are in the order 0.36 Ω·cm.     

Impact of substrate temperature on the structural,optical and electrical properties of thermally evaporated SnS thin films

Tin Sulfide thin films were deposited on soda lime glass substrates at three different substrate temperatures using thermal evaporation technique. The impact of substrate temperature on the deposited films has been studied thoroughly. Surface morphology was modified with the substrate temperature. XRD spectra shows orthorhombic end-centered type SnS having (1 1 0) orientation. The crystallite size increases with the increase in the substrate temperature. At a high substrate temperature (450 °C) small grains form on the surface and crystallinity decreases. The effect of substrate temperature on optical and electrical properties has been studied using UV–Vis–NIR Spectrophotometer and Hall effect respectively. With the increase in the substrate temperature there is a substantial decrease in the transmittance and bandgap value. Refractive index (n), dielectric constant (ε₁) and extinction co-efficient (k) have also been calculated for different substrate temperatures.     

Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis

Fe-doped ZnO thin films have been prepared by spray pyrolysis on glass substrates and the influence of Fe-doping concentration on the structural and optical properties of the films has been studied.The X-ray diffraction (XRD) analysis shows that Fe doping has a significant effect on crystalline quality,grain size and strain in the thin films.The best crystalline structure is obtained for 3 at%Fe doping as observed from scanning electron microscopy (SEM) and XRD.However,lower or higher Fe-doping degrades the crystalline quality in turn.Moreover,UV spectroscopy demonstrates the influence of Fe-incorporation on visible range transmittance of ZnO where the best transmittance is obtained for 3 at%doping.The results have been illustrated simultaneously focusing previous results obtained from literature.     

Ni-Al薄膜的制备和电性能研究

用双靶直流磁控共溅射制备了NixAl(1-x)(0.75相似文献   

不同离子比的锰钴镍薄膜材料结构和电学性能

采用磁控溅射法分别制备了不同组分的Mn-Co-Ni-O(MCNO)薄膜材料。通过对材料结构分析,发现在Mn离子数目不变的情况下,随着Co离子的增加,晶粒尺寸逐渐增大,且晶格常数先增大后减小;在Co离子数目不变的情况下,随着Mn离子的增加,薄膜的择优生长晶面由(311)不晶面向(400)晶面转变。对电学性能测试进行分析,可知薄膜材料既有Mn离子的导电机制,也有Co离子的导电机制;Mn_1.2Co_1.5Ni_0.3O₄具有最低的电阻率(235 Ω.cm),具有最高的室温负温度电阻系数︱a₂₉₅︱(4.7%.K_-1)值。     

Investigation of the optical and structural properties of thermally evaporated cadmium sulphide thin films on polyethylene terephthalate substrate

Cadmium sulphide (CdS) thin films of different thicknesses ranging from 100 to 400 nm were prepared on polyethylene terephthalate (PET) substrates at room temperature by thermal evaporation technique in vacuum of about 3×10⁻⁵ Torr. The structural characterisation was carried out by X-ray diffraction (XRD). These studies confirm the proper phase formation of the cadmium sulphide structure. The root mean square (RMS) roughness of the films was measured using atomic-force microscopy. The root mean square roughness of the films increases as the film thickness increases. The energy gap of CdS on PET substrates was determined through the optical transmission method using an ultraviolet–visible spectrophotometer. The optical band gap values of CdS thin films slightly increase as the film thickness increases. The optical band gap energy was found to be in the range of 2.41–2.56 eV.     

ZnO薄膜的丙酮气敏特性研究

用直流磁控反应溅射法,分别在Si(111)基片及Al2O3陶瓷基片上制备了ZnO薄膜,并进行TiO2、SnO2、Al2O3或CuO的掺杂和退火处理。用XRD分析了退火前后晶型的变化,利用气敏测试系统对各样品进行了气敏特性测试。结果表明:经过700℃退火后的样品,在最佳工作温度为220℃时,对丙酮有很好的选择性和很高的灵敏度(34.794)。掺杂TiO2或SnO2,可提高ZnO薄膜传感器对丙酮的灵敏度(57.963)。     

Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrystalline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.     

脉冲Nd:YAG激光器选区晶化制备多晶硅薄膜

采用三倍频后的Nd:YAG固体脉冲激光系统(波长为355 nm)选区诱导晶化非晶硅薄膜,以制备多晶硅薄膜。分别测试了激光晶化前后薄膜的表面形貌和拉曼光谱。在文中分析了400 nm厚薄膜在激光扫描前后的表面形貌变化。拉曼光谱显示薄膜的晶化程度随着激光能量的增加而提高。最优的激光晶化能量密度与薄膜的厚度相关。对于300 nm和400 nm厚的非晶硅薄膜,有效晶化非晶硅的能量密度分别在440-634 mJ/cm²,777-993 mJ/cm²之间。在激光能量密度分别为634 mJ/cm²,975 mJ/cm²和1571 mJ/cm²时,300 nm、400 nm和500 nm厚薄膜达到最好的晶化效果。     

锡掺杂对碲化镉多晶薄膜形貌和光学性能的影响

Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrys- talline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of （111） in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of （111） in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of （111） in films and a larger grain size can be obtained by appropriate Sn-doping （molar ratio of Sn ： CdTe = 0.06 ： 1）, while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.     

Effects of Sb,Zn doping on structural,electrical and optical properties of SnO2 thin films

Highly transparent, low resistive pure and Sb, Zn doped nanostructured SnO₂ thin films have been successfully prepared on glass substrates at 400° C by spray pyrolysis method. Structural, electrical and optical properties of pure and Sb, Zn doped SnO₂ thin films are studied in detail. Powder X-ray diffraction confirms the phase purity, increase in crystallinity, size of the grains (90–45 nm), polycrystalline nature and tetragonal rutile structure of thin films. The scanning electron microscopy reveals the continuous change in surface morphology of thin films and size of the grains decrease due to Sb, Zn doping in to SnO₂. The optical transmission spectra of SnO₂ films as a function of wavelength confirm that the optical transmission increases with Sb, Zn doping remarkably. The optical band gap of undoped film is found to be 4.27 eV and decreases with Sb, Zn doping to 4.19 eV, 4.07 eV respectively. The results of electrical measurements indicate that the sheet resistance of the deposited films improves with Sb, Zn doping. The Hall measurements confirm that the films are degenerate n-type semiconductors.