激光作用下GeS2非晶半导体薄膜的性能及结构变化

采用514.5石nm波长的氩离子激光器,结合X射线衍射分析（XRD）、红外光谱分析（IR）、扫描电镜分析（SEM）和透射光谱分析,研究了GeS₂非晶半导体薄膜在激光辐照后的性能及结构变化.实验结果发现,经热处理和激光辐照后,薄膜的光学吸收边均移向短波长处,并且随着辐照激光强度和辐照时间的增加而增加,这种平移在退火薄膜中是可逆的.SEM结果分析表明,薄膜在激光辐照后有晶相出现,且随着辐照激光强度的增加,晶相更多.     

ZnO纳米晶薄膜的制备及特性分析

在低温下制备了粒径小于10nm的ZnO纳米晶,用旋涂法制备ZnO纳米晶薄膜,XRD分析ZnO晶相是纤锌矿结构;SEM与AFM表明,纳米晶薄膜在300％退火后薄膜的厚度明显减小到130nm,表面粗糙度降低到3．27nm,粒径明显增大;紫外-可见吸收和透射比光谱表明,随着退火温度的增加,吸收边发生了红移,吸收肩更明显,薄膜具有高的透射率（75—85％）;薄膜方阻随温度增加而增大,300℃以下退火方阻增加很小（小于8．5Ω／sq）,400℃以上退火方阻大幅增加（大于21．1Ω／sq）,因此,ZnO纳米晶薄膜最优退火温度点为300℃。     

硅基氧化铱薄膜的脉冲激光沉积及其微观结构研究

采用脉冲激光沉积技术，在Si（100）基片上制备了高致密的氧化铱（IrO2）薄膜，研究了不同沉积温度对薄膜结构的影响。利用X射线衍射（XRD）、拉曼光谱、扫描电镜（SEM）和原子力显微镜（AFM）对制备的IrO2薄膜进行了表征。结果表明：在20Pa氧分压，250℃～500℃范围内，得到的薄膜为多晶的IrO2物相，其晶粒尺寸和粗糙度随着沉积温度的升高而增加；所得到的IrO2薄膜表面粗糙度低，厚度均匀，与基片结合良好。     

WO3/Si纳米晶薄膜的脉冲准分子激光沉积及结构分析

采用脉冲准分子激光大面积扫描沉积技术，在Si(111)单晶衬底上沉积了WOx薄膜，采用X射线衍射（XRD）、喇曼光谱（RS），付里叶红外光谱（FT－IR）及透射电镜扫描附件（STEM）对不同条件下沉积的样品进行了结构分析，结果表明，氧分压和沉积温度是决定薄膜结构和成份的主要参数，在沉积温度300℃以上及20Pa氧压下得到了三斜相纳米晶WO3薄膜。     

微波辐照对HDPE在Al/HDPE/Al界面层结晶结构影响的研究

采用衰减全反射傅里叶变换红外光谱（ATR－FTIR）和薄膜X射线衍射（TF－XRD）方法，研究了微波辐照对聚乙烯（HDPE）在Al/HDPE/Al界面层结晶结构的影响，结果表明，微波辐照可实现HDPE界面层晶区部分的正交晶形向六方晶形转变，增大正交晶昌形晶粒尺寸和无序程序，随界面层深度增加，微波对HDPE晶形结构的影响逐渐减弱。     

低温水浴制备ZnO纳米晶薄膜的研究

首先在低温下制备了粒径小于10nm的ZnO纳米晶,然后采用旋口法制备了ZnO纳米晶薄膜,XRD分析ZnO晶相是纤锌矿结构;SEN与AFM表明,纳米晶薄膜在300℃退火后薄膜的厚度明显地减小到130nm（未退火200nm）,粒径明显增大,表面粗糙度减少到3．27nm（未退火4．89nm）;紫外-可见吸收和透射比光谱表明,随着退火温度的增加,吸收边发生了红移,吸收肩更明显,薄膜具有高的透射率（75—85％）,随着温度增加薄膜方阻增大,300℃以下退火方阻增加很小（小于8．5Ω／sq）,400℃以上退火方阻大幅增加（大于21．1n／sq）,假定存在最优退火温度点（300℃）。     

铝诱导非晶硅薄膜快速低温晶化研究

采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-Si薄膜晶化的影响，采用XRD，Raman，SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20min薄膜仍为非晶结构（a-Si），在450℃下退火20min后非晶硅开始晶化且随着温度的升高，且晶化程度加强。     

类金刚石薄膜的紫外辐照研究

对射频等离子体方法制备的类金刚石（以下简称DLC）薄膜样品进行了紫外辐照，采用电阻率，Raman光谱及红外光谱研究了紫外光（以下简称UV）辐照对DLC薄膜结构与特征的影响，Raman光谱表明：紫外光对DLC薄膜中SP^3C-H键的破坏作用非常明显，红外（IR）光谱结果进一步验证了这一结果，经UV辐照后，DLC薄膜的电阻率呈变小趋势，这说明薄膜被强烈氧化，最后呈现石墨化趋势。     

CuI微晶掺杂硅凝胶玻璃及其薄膜的制备与光谱性质

抄采用溶胶-凝胶工艺制成Cul微晶掺杂硅凝胶玻璃及其薄膜。通过X射线粉末衍射（XRD）和高分辨透射电镜（HRTEM）分析观察到玻璃中的晶相及其分布；由薄膜的室温透射光谱发现，随着热处理温度提高和时间延长，薄膜的特征透射谱谷向长彼方向移动（红移），并源于玻璃中的量子尺寸效应。     

立方相Y掺杂ZrO2纳米晶薄膜的制备与辐照效应研究

采用溶胶-凝胶结合旋涂法在单晶Si衬底上制备了立方相Y掺杂ZrO₂纳米晶薄膜(YSZ), 并分析了制备工艺参数对YSZ成膜的影响。采用光学显微镜、扫描电子显微镜、X射线衍射和透射电镜等手段对样品进行了表征和分析。结果表明, 加入PVA作为分散剂、采用分级干燥工艺以及提高匀胶转速可大大提高YSZ薄膜的成膜质量, 制备的YSZ薄膜表面十分平整, 没有出现裂纹。YSZ薄膜为立方相结构, 没有出现其它相。薄膜由平均晶粒尺寸为9.4 nm的纳米晶组成, 薄膜的厚度约为60 nm。在室温条件下, 低剂量的Xe离子辐照YSZ薄膜后出现微裂纹, 而当辐照剂量比较高时, 由于热峰效应, 辐照引起的微裂纹逐渐发生愈合。并且, 随着辐照剂量的增加, YSZ薄膜的平均晶粒尺寸增大。     

硫系Ge-As-S玻璃和薄膜的特性

用差热分析，X射线衍射分析和透射光谱分析等手段研究了硫系Ge-As-S玻璃和薄膜的性能，结果表明，Ce-As-S体系的成玻能力较强在空气中自然冷却就能成玻，其（Tg-Tc)/Tg值为0.127-0.289，经激光辐射后的Ge-As-S玻璃薄膜的透射光谱曲线向短波方向移动，且平移的大小随激光功率的增加而增加，薄膜的透射光谱线的平移表明激光辐射导致薄膜光致结构变化，利用电子束辐射极化，通过Maker条纹测试方法在Ge-As-S玻璃中观察到二次谐波。     

Photoelectrical Response in Single‐Layer Graphene Transistors

The illumination of single‐layer graphene (SLG) transistors with visible light causes a negative shift in their transfer curves, attributable to the desorption of oxygen. However, their hysteresis is not affected by illumination, which suggests that charge traps are not affected by the visible‐light exposure. When SLG transistors are covered with a layer of photoactive polymer, the photodesorption‐induced current change in the transistors becomes less significant than the effects caused by the surrounding photoactive polymer. These observations demonstrate that the photoelectrical response of SLG transistors is dominated by extrinsic mechanisms rather than by the direct photocurrent process. The results suggest a new strategy for achieving light detection. The large cross section of SLG films for receiving photons and the capability of tailoring photoelectrical properties on them is potentially useful for optoelectronic applications.     

Light illumination effects in ambipolar FETs based on poly(3-hexylthiophene) and fullerene derivative composite films

The effects of light illumination on field effect transistors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C₆₁-butyric methyl ester (PCBM) composite films have been studied. It is found that the light illumination on pure P3HT and PCBM generally resulted in decrease of the threshold voltages and increase of the mobilities by a little. In the composite film at the PCBM contents of x = [P3HT] / ([P3HT] + [PCBM]) = 0.67 ∼ 0.9, an ambipolar field transport appeared. The light illumination effect was observed remarkably in the shift of threshold voltage for the hole generation at x = 0.75. Variations of Hole and electron mobilities and threshold voltage of electron generation upon light illumination were basically similar to those of the pure materials. The results were discussed in terms of the light assisted carrier generation in field effects.     

Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.     

New azobenzene polymers for light-controlled optical elements

Three new azobenzene polymers have been synthesized by polymerization of cyanazobenzene monomers with different numbers of methylene groups attached to the cyanazobenzene dye. The rearrangement of the anisotropic azobenzene moieties in them was initiated by illumination with linearly polarized light (488 nm), and the optical anisotropy due to this arrangement has been investigated. The photobirefringence can be erased by illumination with circularly polarized light and re-induced to the same value with linearly polarized light. We show that films from these polymers can be used as optically controlled reversible polarization elements.     

Broadband photovoltaic effect of n-type topological insulator Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films on p-type Si substrates

We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD).The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths.Under the light illumination with a wavelength of 1,000 nm,a short circuit current (Isc) of 19.2 μA and an open circuit voltage (Voc) of 235 mV are achieved.The maximum fill factor (FF) increases with a decrease in the wavelength or light density,achieving a value of 35.6％ under 600 nm illumination.The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale.These findings are important for both the fundamental understanding and solar cell device applications of TI materials.     

WO3+掺杂对纳米TiO2薄膜可见光致亲水性的影响

用溶胶-凝胶法和浸渍-提拉工艺在载波片上制备了均匀、透明的WO^3＋掺杂的纳米TiO2薄膜.用XRD、紫外-可见分光光度计分析了样品的晶相和光吸收性能,研究了WO^3＋的掺杂、掺杂量及热处理温度对薄膜可见光致亲水性的影响,并考察了薄膜在停止光照后,其亲水性能的变化.结果表明,与纯TiO2薄膜相比,掺WO^3＋的TiO2薄膜对可见光的吸收有所增强,并有一定的红移现象,且在可见光照射下,亲水性能都有提高,WO^3＋的最佳掺杂量为3%（物质的量比）;薄膜的最佳煅烧温度为773K;停止光照后,掺WO3＋的TiO2薄膜亲水性能持续的更久.     

Photoinduced hydrophilicity of titanium dioxide thin films prepared by cathodic electrodeposition

Crystal structure and microstructural properties of titanium dioxide thin films prepared by cathodic electrodeposition on indium-tin-oxide coated glass substrates from aqueous peroxo-titanium complex solutions have been investigated as a function of sintering temperature (25-500 °C) for the first time. We have noticed pronounced photoinduced hydrophilicity for such thin films on exposure to ultraviolet (UV) light illumination. It was observed that all the films, irrespective of their crystalline nature (amorphous and crystalline), display transformation from hydrophobic to super-hydrophilic behavior upon UV illumination. This observation can be correlated with typical nanoporous morphology of electrodeposited TiO₂ films.     

One-dimensional Ag2S/ZnS/ZnO nanorod array films for photocathodic protection for 304 stainless steel

Highly ordered Ag_2 S/ZnS/ZnO nanorod array film photoanodes were prepared on a Ti substrate for photocathodic cathodic protection.The results indicated that the photoresponse range of the Ag_2S/ZnS/ZnO composite film was extended compared to those of the ZnO and ZnS/ZnO films,indicating its higher light absorption capacity.When the Ag_2S/ZnS/ZnO composite film served as a photoanode,the film can provide the best effective photocathodic protection for 304 stainless steel in a 3.5 wt% NaCl solution under white light illumination compared to the ZnO and ZnS/ZnO films.Additionally,in comparison to pure ZnO film,the photocurrent for the ZnS/ZnO film remained the same without noticeable fluctuation after illumination for 1 h,indicating that the ZnS functionalization improved the stability by overcoming the photocorrosion effect of the ZnO photoanode under light irradiation.