基于小波变换的图像边缘检测

介绍了利用小波变换进行图像边缘检测的原理与方法。基于小波变换的模极大值原理,利用不同尺度小波变换后的不同方向获取图像的高频信息,并通过小波系数的模极值点与过零点,检测出图像在四个方向上的模极大值,得到该位置模的局部最大值。仿真测试表明,利用小波变换进行图像边缘检测可以较好的检测图像边缘的细节特征,取得了很好的效果。     

大鱼际掌纹图像边缘提取算法

主要研究大鱼际掌纹图像边缘提取算法。介绍几种经典的边缘检测算子以及Hough变换方法,重点讨论了小波模极大值多尺度边缘检测方法。构造了高斯多尺度边缘检测算子,根据噪声和图像边缘的小波变换模值跨尺度传递的不同特征,研究小波模极大值多尺度边缘检测方法,对大鱼际掌纹图像进行边缘提取。实验结果表明该方法检测到的边缘细节丰富,定位较准确,有效降低了噪声,不足之处是连续性较差。     

一种基于二进小波变换的图像边缘检测方法

边缘检测是图像处理和计算机视觉领域最活跃的研究课题之一。传统边缘检测方法对噪声非常敏感,针对该问题在传统边缘检测算法分析的基础上,提出了一种基于二进小波变换的图像边缘检测方法。首先,对原图像进行二进小波分解,然后对低频子图像用直方图均衡化来进行增强,对增强后的低频子图像用二进小波变换模极大值点方法进行边缘检测得到边缘图像。实验结果表明,这种边缘检测方法明显优于对原图像直接使用传统边缘检测算子或二进小波变换模极大值点的边缘检测方法。     

一种新的图像边缘检测方法

针对基于空间域或小波变换域图像边缘检测算法提取的边缘只是具有有限方向的问题,该文提出使用具有抛物线型尺度和足够方向消失矩的Contourlet变换来更有效地表示自然图像中的奇异曲线。Contourlet子带比小波子带具有更强的方向性,在其子带上检测系数模极大值,运算复杂度更低。实验结果表明,与基于小波模极大值的图像边缘检测方法相比,该文算法有较低的计算复杂度,所提取的边缘更加逼近图像真实边缘。     

改进的基于小波变换的图像边缘检测方法的研究

本文介绍一种基于小波变换模极大值进行图像边缘检测的方法。对图像进行二维小波变换,其梯度模值反映了图像的边缘,用这种方法可以检测到图像所有边缘的细节,但同时也会检测到一些伪边缘和噪声点。本文采用图像分块方法确定阈值,并用该阈值来限定模值,与传统边缘检测方法相比,可以得到更好的边缘检测效果。     

多尺度小波在图像测量中的应用

在图像测量中,图像的边缘检测是关键.基于信号和噪声在不同尺度下小波系数模值的变化特征,利用小波变换系数模的局部极大值提取图像的边缘.在对前、后孔配准图像的测量中,能够降低噪声,并能比较精确的得到图像的边缘.     

小波变换模极大值域的一种自动滤波算法的实现

本文给出一种对小波变换模极大值进行自动滤波的算法.该算法可以自动寻找不同尺度之间对应同一边缘的模极大值,以实现非人工干预下的自动检测和去噪;并为采用小波变换模极大值法对边缘进行实时检测提供了可能性.     

红外小目标小波多尺度相关检测方法

提出一种基于小波多尺度相关的目标检测方法.该方法通过二进小波对图像进行多尺度分析;利用边缘和噪声具有不同的Lipschitz指数造成它们的小波变换模在不同尺度下的不同传播特性,根据小波变换尺度相关性计算相邻大尺度模相关量用来增强信号,抑制噪声,提取粗略边缘图;并结合小尺度检测,具有定位精确的特点,将粗略边缘图与小尺度模图相与,寻找模极大值点,得到最终的检测结果.实验结果表明,该方法较传统的小波多尺度边缘检测方法能更加有效地进行红外小目标检测.     

一种基于小波变换和图像边缘特征的图像融合方法

图像融合是信息融合的重要组成部分,是一种重要的增强图像信息的方法。本文将图像小波变换边缘提取和图像融合结合起来,提出了一种基于图像边缘特征的图像融合方法。首先对输入图像进行小波变换,用模极大值方法检测出图像的多尺度边缘,然后利用边缘特征对小波系数进行融合。实验结果表明该方法既能有效地去除噪声,又能突出源图像的边缘细节信息,是一种有效的图像融合方法。     

一种基于图像融合的含噪图像边缘检测方法

针对含噪声图像在边缘定位、噪声抑止、弱边缘保留及边缘细节的视觉感知等方面难以兼顾的具体情况,提出了一种基于图像融合的含噪图像边缘检测方法。首先,讨论了基于小波变换模极大值的图像边缘检测法;结合数学形态学基本运算与信息熵理论,提出了改进的灰值数学形态学图像边缘检测法,并分析了其基本原理。然后,结合两种方法的优点,采用叠加运算进行图像融合最终检测到的图像边缘连续完整。最后,与传统边缘检测法、小波变换模极大值法、改进的灰值数学形态学法进行了实验对比,结果表明,本文算法优质系数最大,所花时间最少。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.