数据库管理技术与计算机安全风险的规避

通过对计算机数据库应用体系的健全,可以有效提升计算机网络安全工作的处理效率、质量。受到计算机网络化环境的影响,计算机数据库的安全性是不稳定的,这需要进行计算机数据库网络安全工作的更新,进行计算机数据库管理技术体系的健全,实现其内部各个应用环节的协调,从而确保计算机数据信息的有效管理及其处理。     

大数据时代计算机信息处理技术研究

大数据时代的快速发展给计算机信息处理技术带来极大的机遇和挑战,要充分认识到大数据时代计算机信息处理技术的重要性和特点。文章探讨和分析大数据时代下的计算机信息采集技术、存储技术和安全技术,构建适宜的网络平台和数据库结构,实现对数据信息的高效采集和数据库链接。并研究和分析数据存储算法,构建低冗余度、高可靠性的海量数据存储系统,同时运用计算机信息安全技术构建复杂的安全信息系统,确保计算机信息处理技术在生产生活、各行各业的便捷安全应用。     

计算机数据库技术在信息管理领域的应用

随着信息化技术的持续发展,其在人们的日常生活和工作中得到了广泛应用,通过对信息技术的应用,可以更好地收集、整合、分析和处理数据,以发挥数据信息资源的重要价值。在信息化时代,计算机数据库技术的应用,可以有效提升信息管理效率,使各类信息的处理得到优化,从而满足人们的信息需求。文中充分研究了计算机数据库技术,分析了该技术的特征及内涵,对计算机数据库技术的应用现状进行了探讨,并阐述了其应用成效,希望能为相关研究提供一些参考和借鉴。     

计算机数据库备份和恢复技术的应用

随着我国科技的不断发展,计算机数据库越来越受重视,计算机逐渐被应用于人们的日常生活中,在人们的学习和交往过程中,起到了重要作用。现阶段,随着计算机的应用范围不断扩大,需要加强对计算机数据库备份与恢复技术的深入研究。文中对计算机数据库特点、基本含义、数据库备份技术进行了分析,根据我国计算机发展情况,重点总结了计算机数据库备份技术和恢复技术的应用对策,加强了两者之间的结合,更好地弥补了计算机数据库储存和应用时的不足,增强了计算机数据的真实性和完整性,提升了计算机的安全性和保密性,从而促进计算机数据库的发展。     

浅析计算机数据库管理系统的应用

网络技术在当今社会的应用范围越来越广,已成为人们工作生活的重要工具。计算机数据库管理系统作为数据管理系统的重要内容,在网络信息传输过程中的应用,能够对计算机数据进行加工和保密处理,并进行快速的传输和接收,实现了信息的快速处理,对于提高计算机的安全性和可靠性具有重要的意义。本文主要阐述了计算机数据库管理系统的应用基础和主要的应用领域。     

浅谈计算机数据库的应用技术及维护

随着计算机技术的不断进步,在计算机科学技术中数据库技术是应用最广、发展最快的领域,是计算机信息系统和应用程序的核心技术。数据库是存储数据并对数据进行操作的一种工具。本文主要进行分析计算机数据库的应用技术以及数据库的维护。     

计算机数据库备份与恢复技术探讨

当前计算机网络安全问题越来越突出,受到各种安全因素的影响,一旦计算机数据库的数据信息泄漏,会给国家、社会和人民造成巨大损失,而计算机数据库备份和恢复技术的应用,对数据库相关数据信息进行恢复和备份,保障计算机数据库的安全运行.本文分析了计算机数据库备份和恢复技术应用.     

云计算中的数据库关键性技术分析

伴随着计算机技术的迅速发展,云计算的诞生标志着计算机应用技术已经进入了一个新的篇章。由于运用云计算能够简化处理信息数据时的运算过程,同时又能够节省存储数据时的资金成本,因而它在计算机应用领域中大受欢迎。文章根据现阶段云技术的发展现状,简要介绍了云计算和NoSQL技术,对云计算中的数据库关键技术——NoSQL技术作了简要的分析。     

浅析计算机数据库的维护与管理

随着计算机技术的飞速发展,利用计算机来获得和处理信息是当今信息管理的一大特色。对于计算机硬件的发展,有关信息管理的软件数据库系统管理软件也在迅猛发展。目前最好的、最先进的数据管理技术就是数据库技术。数据库技术是管理数据的一种最新方法,它研究如何组织和存储数据和如何高效的获取和处理数据。在数据库技术的应用中,数据库的维护与管理也相当重要。     

嵌入式数据库SQLite在数字电视EPG系统中的应用

分析了嵌入式数据库SQLite架构,介绍了EPG数据来源,提出将SQLite运用于数字电视接收终端,并结合实例说明了数字电视机顶盒中使用SQLite构建EPG数据库和对EPG数据进行管理的方法。SQLite数据库的应用,提高了数字电视系统处理数据的效率,节省了处理数据时所占用的资源。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.