宽带X波段波导结环行器的研究

为了满足某系统的要求,需研制带宽在X波段达4GHz（40％）的宽带波导结环行器。文中采用Y形脊波导中心结形式,采用三阶等宽切比雪夫阶梯阻抗匹配器实现环行器宽带阻抗匹配,并利用HFSS软件优化环行器结构。设计的环行器实验结果为：在8．4GHz至12．4GHz范围内,插损不大于0．3dB,隔离不小于20dB,驻波不大于1．2。环行器设计结果与实验结果基本一致,表明该设计方法正确,设计的环行器满足系统宽带要求。     

毫米波宽带高功率结环行器的研制

为了满足某宽带发射机系统的需求,需研制全Ka波段（26.5～40 GHz）的宽带波导结环行器。本文采用Y形脊波导中心结形式,多级切比雪夫阶梯阻抗匹配器实现环行器宽带阻抗匹配,利用HFSS优化环行器结构。设计的环行器实验结果为：在26.5～40 GHz范围内,插损不大于0.45 dB,隔离不小于19.5 dB,驻波不大于1.4,通过60 W平均功率实验。     

Ku波段自偏置微带双Y结环行器的设计和制作

目前商用环行器均需要外加偏置磁场,体积大,难集成。利用厚度为0.2mm的锶永磁铁氧体材料,基于带线结环行器理论,设计、优化并制作了一种自偏置微带双Y结环行器,器件无需外加偏置磁场,可显著降低环行器的体积和重量,便于集成化。测试结果和仿真结果基本吻合。测试结果表明,制作的器件在17.5GHz和29.3GHz频率点处均呈现明显的环行性能。在17.5GHz处,电压驻波比为1.3,插入损耗为4.2dB,隔离损耗为20.4dB。在29.3GHz附近,隔离损耗为18.1dB。在30.3GHz附近,插入损耗为3.1dB,电压驻波比约为1.2,最后探讨了所制作的环行器的插入损耗偏大的原因。     

基于M型六角铁氧体Ba(ZnHf)0.08Fe11.92O19的自偏置微带环行器设计

电子信息技术的发展对环行器提出了低损耗、高隔离度及小型化的要求，采用具有高剩磁比(M_r/M_s)和强各向异性场(H_a)的BaM自偏置铁氧体材料有利于提高环行器性能和减小器件尺寸。在阐述高度取向M型六角铁氧体Ba(ZnHf)_0.08Fe_11.92O₁₉制备工艺的基础上，表征了材料的相结构、微观形貌和磁性能。根据环行器设计理论，基于0.25 mm厚度的BaM铁氧体材料仿真设计了工作于Ku波段的双Y结和开槽多Y结环行器。仿真结果表明，两种环行器均在12.44 GHz处显示出良好的环行功能，电压驻波比均小于1.22。在中心频率附近，双Y结环行器插入损耗为0.61 dB,相应的隔离度为26 dB,20 dB带宽为1.3 GHz;开槽多Y结环行器插入损耗为0.505 dB,相应的隔离度为36 dB,20 dB带宽为1.03 GHz。相比于双Y结环行器，开槽多Y结环行器在保证器件性能的前提下，能够有效改善插入损耗和隔离度等性能，并有利于减小环行器尺寸。     

一种双波段MEMS低噪声放大器设计

本文利用一种MEMS电容式开关并联实现双波段2．1GHz／4．6GHz微机械低噪声放大器。根据MEMS电容开关的电容特性,实现LNA电路匹配阻抗的变化、在不同的波段实现谐振匹配,从而实现双波段分别放大的功能。首先提出一种电容式开关的设计,理论、仿真分析了开关的特性,开关在2．21GHz和4．8GHz具有良好的插入损耗和隔离度、插损为2．2dB左右,隔离度达到30dB以上。其次将开关引入于基于Casoode放大管的LNA电路中、和CMOS电路具有很好的兼容性,设计了LNA的电路模型和仿真分析、分析结果表明,在频率为2．21GHz时、增益达到11．4dB,4．8GHz时、增益达12．5dB,二波段隔离度在30dB以上、噪声在4．1dB左右,该研究方法和设计克服了普通双波段LNA需要两路单独电路的缺点,该器件可应用在Wimax,WiFi等3．5G、4G无移动通信网络中。     

基于高取向度多晶SrNi2Sc0.75Fe15.25O27的Ku波段自偏置环行器设计

计及自偏置环行器插入损耗过大,分别从铁氧体材料与器件设计两方面进行研究,以改善自偏置环行器性能。对取向W型六角铁氧体SrNi₂Sc_0.75Fe_15.25O₂₇(SrW)的磁性能进行了阐述,并基于SrW性能参数设计了Ku波段自偏置微带环行器。同时,论述了三角谐振器的环行原理、阻抗匹配原理,并进行了器件仿真分析。由仿真结果可知,自偏置微带环行器在12.4 GHz附近插入损耗为最小值0.51 dB,相应的隔离度为18.58 dB,15 dB带宽为0.94 GHz,电压驻波比小于1.22,表明该环行器在12～18 GHz实现了良好的环行性能。     

易集成的S波段小型化环行器的研制

采用半集总参数设计思路,利用高场工作模式和双Y中心结内导体形式,研制出了一种S波段电性能优良、体积十分小巧且易于集成的小型化环行器。环行器测试结果：在3．2GHz附近9％带宽范围,插损≤0．35dB,隔离≥20dB,驻波≤1．2,能在-55℃～＋85℃的宽温范围工作。     

CDMA 870～880MHz频段的结环行器设计

利用带线结环行器的相关理论．设计7870～880MHz结环行器．最看实现的环行器在0．5～1．5GHz内,插入损耗≤0.4dB,最小隔离麦≥20dB．电压驻波比≤1．20．符合基站用环行器的技术指标。[编者按]     

HMC849LP4CE：适合蜂窝和LTE／4G的SPDT开关

Hittite公司推出SPDT开关HMC849LP4CE，HMC849LP4CE GaAs pHEMT SPDT MMIC开关非常适用于蜂窝，LTE／4G基础设施，提供高达60dB的隔离和52dBm输入IP3，插入损耗低至0．8dB。该器件在5—6GHz WiMAX频段提供32dBm的P1dB压缩点。     

铁氧体薄膜环行器的设计

介绍了采用铁氧体薄膜的微带环行器的工作原理、结构以及环行器阻抗匹配网络。对环行器进行了分析以及设计。在Ansoft公司的仿真软件HFSS中建立了环行器的模型进行了仿真,并对各个部分尺寸进行了优化。设计的薄膜环行器铁氧体薄膜厚度为10μm,在X波段（9.67～9.68GHz）可以达到插损低于1dB,隔离度大于20dB的设计要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.