(K_(0.5)Na_(0.5))NbO_3-CaZrO_3基无铅压电陶瓷的相结构和压电性能研究

采用传统陶瓷工艺制备了(1-x)(K0.5Na0.5)NbO3-xCaZrO3(简称KNN-CZ)无铅压电陶瓷。分析了陶瓷样品的相结构组成。测试结果表明:所有陶瓷样品均为钙钛矿相,未发现其它晶相。随着CaZrO3含量的增加,(1-x)KNNxCZ陶瓷的相结构由正交相转变为四方相,最后变为立方相。研究了不同CaZrO3含量对压电性能的影响,实验表明:当CaZrO3含量为0.05mol时,压电常数d33和径向机电耦合系数kp分别达到了最大值196pC/N和0.35。(1-x)KNNxCZ(x=0.05)陶瓷的压电性能展现了良好的温度稳定性和经时稳定性,这些结果表明(1-x)KNN-xCZ(x=0.05)陶瓷是一种优良的无铅压电备选材料。     

锂掺杂KNN-BNKT无铅压电陶瓷性能研究

采用液相包覆法制备了结构致密的铌酸钾钠基[(K0.5Na0.5NbO3-K0.1Na0.4Bi0.5TiO3)-xLiNbO3,0≤x≤0.02]无铅压电陶瓷,研究了掺杂Li+对铌酸钾钠钛酸铋钾钠K0.5Na0.5NbO3-K0.1Na0.4Bi0.5TiO3(KNN-BNKT)晶体结构和压电、介电性能的影响。结果表明:当Li+含量在x取0～0.010(摩尔分数)时,陶瓷样品均形成了均一的钙钛矿型结构。Li+掺杂量对陶瓷压电、介电性能有很大的影响,其压电常数(d33)随着Li+掺杂量的增加先升高后降低,并在x=0.010的时候取得最大值。实验表明:当x=0.01时,(K0.5Na0.5NbO3-K0.1Na0.4Bi0.5TiO3)-xLiNbO3无铅压电陶瓷表现出较好的压电性能:d33=173pC/N,相对介电常数εr=620.745,介电损耗tanδ=0.0132,kp=27.35%,kt=26.34%,Qm=48.97。     

(1-x)BCZT-xKNNLN无铅压电陶瓷的结构与电性能研究

为了获得高性能无铅压电陶瓷材料,本文采用传统固相烧结反应法制备了(1-x)(Ba_0.85Ca_0.15Zr_0.08Ti_0.92)-x (K_0.5Na_0.5NbO₃-LiNbO₃)(简称(1-x)BCZT-xKNNLN)无铅压电陶瓷并系统地研究了KNN含量的增加,整体电学性能的变化。研究结果表明：制备的无铅压电陶瓷具有纯的钙钛矿结构;当KNN的含量为0.4mol时,晶粒尺寸趋于一致,致密性提高,且达到了最佳的电学性能d₃₃～315pC/N, kp～0.46,ε_r～1357,tanδ～0.025。当KNN含量超过0.4mol时,整体性能逐渐下降。     

制备工艺对0.95(K_(0.5)Na_(0.5))NbO_3-0.05CaZrO_3基无铅陶瓷压电性能的影响

采用传统陶瓷工艺制备了0.95(K0.5Na0.5)NbO3-0.05CaZrO3无铅压电陶瓷。研究了烧结温度和极化工艺对陶瓷压电性能的影响。结果表明:随着烧结温度的提高,0.95(K0.5Na0.5)NbO3-0.05CaZrO3陶瓷的体积密度增大,在1170℃时达到最大值,同时d33和kp,在此温度也分别达到他们的最大值210pC/N和0.40。极化工艺对0.95(K0.5Na0.5)NbO3-0.05CaZrO3陶瓷的压电性能有明显的影响,0.95(K0.5Na0.5)NbO3-0.05CaZrO3陶瓷的最佳极化温度是70℃,最佳极化电场是4kV/mm。     

(1-x)K0.49Na0.51NbO3-xLiNbO3无铅压电陶瓷的性能

用传统固相烧结法制备(1-x)K0.49Na0.51NbO3-xNbO3(KNNLN,x=0.00～0.08,摩尔分数)体系无铅压电陶瓷.用x射线衍射仪及精密阻抗分析仪等研究不同掺量LiNbO3掺杂后对KNNLN体系陶瓷的晶体结构和电性能的影响.结果表明:在研究组成范围内,LiNbO3加入后能够形成单一钙钛矿结构的固溶...     

（1–x）（K_（0.48）Na_（0.48）Li_（0.04））NbO_3–x（Na_（0.8）K_（0.2））_（0.5）Bi_（0.5）TiO_3无铅压电陶瓷的相变行为及其压电性能

采用固相法应法制备了（1–x）（K0.48Na0.48Li0.04）NbO3–x（Na0.8K0.2）0.5Bi0.5TiO3无铅压电陶瓷,研究了不同x（0,0.5%,1.0%,1.5%,2.0%,3.0%）对材料的相结构、介电性能以及压电性能的影响。结果表明：随着x增加,样品的Curie温度TC与正交到四方相变温度TO–T均逐渐降低,而压电常数d33与机电耦合系数kp均先升高后降低;该体系在0.5%     

氧化铋掺杂对铌酸钾钠无铅压电陶瓷性能的影响

用传统固相反应法制备了结构致密的铌酸铋钾钠[(Na0.5K0.5)1-3xBixNbO3,0≤x≤0.05]无铅压电陶瓷,研究了掺杂氧化铋(Bi2O3)对铌酸钾钠(Na0.5K0.5)NbO3(NKN)晶体结构和压电性能的影响.结果表明:当Bi2O3含量x＜0.02时,能得到具有纯钙钛矿结构的(Na05K0.5)1.3xBixNbO3陶瓷.最佳烧结温度随Bi2O3含量的增加而升高,与纯铌酸钾钠陶瓷相比,样品密度显著提高.Bi2O3掺杂量对铌酸钾钠的压电性能有很大影响,其压电常数(d33),机电耦合系数(kp,kt)随Bi2O3含量的增加先升高而后降低,并在x=0.01时达到最大值,机械品质因数(Qm)有明显提高.实验表明:当x=0.01时,(Na0.5K0.5)1-3BixNbO3无铅压电陶瓷的密度达4.42g/cm3,表现出优异的压电性能:d33=154×10-6C/N,kp=45%,kt=46%,介电损耗tanδ=3.5%,相对介电常数ε=598,Qm=138.     

(1-x)Li0.05(K0.5Na0.5)0.95NbO3-x(Bi0.5Na0.5)TiO3无铅压电陶瓷的结构与电性能研究

采用固相反应法制备了(1-x)Li0.05(K0.5Na0.5)0.95NbO3-x(Bi0.5Na0.5)TiO3(LKNN-BNT)无铅压电陶瓷,研究了BNT的添加量x(0,0.005,0.01,0.02)对LKNN-BNT陶瓷的结构与电性能影响。X射线衍射(XRD)分析结果表明当x≤0.005时,陶瓷为正交钙钛矿结构,而当x≥0.01时,陶瓷则转变为四方钙钛矿结构,说明该陶瓷的多型相转变(PPT)区域为0.005相似文献   

BiFeO_3掺杂改性铌酸钾钠无铅压电陶瓷

采用传统固相法制备了(1–x)(K0.5Na0.5)NbO3-xBiFeO3[(1–x)KNN-xBF]无铅压电陶瓷,研究了不同BF含量(x=0,0.175%,0.5%,1%,2%,3%,摩尔分数)样品的物相组成、显微结构及电性能。结果表明:当x≤3%时,得到了纯钙钛矿结构的(1–x)KNN-xBF陶瓷。与纯KNN相比,在0x≤1%时,(1–x)KNN-xBF样品的密度(ρ)、压电常数(d33)、平面机电耦合系数(kp)和机械品质因子(Qm)都显著增大;当1%x≤3%时,ρ,d33,kp和Qm又迅速降低;在x=1%时达到最大值。x=1%时,(1-x)KNN–xBF材料的综合性能最好,其中ρ=4.42g/cm3,d33=172pC/N,kp=0.45,介电损耗tanδ=0.021,相对介电常数εr=759和Qm=138;同时表现出较好的抗老化性能。     

微波水热法制备(1-x) K0.55Na0.45NbO3-xLiSbO3系无铅压电陶瓷

以分析纯NaOH,KOH,Li2CO3,Nb2O5,Sb2O3等为原料,采用微波水热法合成(1-x)K0.55Na0.45NbO3-xLiSbO3(KNNLS,x =0.03～0.07mol)粉体,分析了粉体的晶体结构与形貌.以该粉体制备压电陶瓷,系统研究了LiSbO3含量对压电陶瓷结构与性能的影响.研究结果表明:微波水热法在220℃下保温30min可以合成具有纯正交钙钛矿结构的KNNLS(x=0.03～0.07)粉体,粉体呈立方状,尺寸约0.5～1μm.利用该粉体制备的压电陶瓷结构致密,晶粒大小分布均匀.当x=0.05时,该组成陶瓷具有最佳的综合压电性能:压电常数d33=110 pC/N,平面机电耦合系数kp=0.29,介电常数εT33/ε0=466,介质损耗tanδ =1.4％以及机械品质因素Qm=107.     

K0.5Na0.5NbO3-BaCu0.5W0.5O3无铅压电陶瓷的结构与性能

以传统固相法工艺制备(1-x)K0.5Na0.5NbO3-xBaCu0.5W0.5O3[(1-x)KNN-xBCW]无铅压电陶瓷,研究不同BCW掺量(x=0％,0.1％,0.25％,0.5％,1.0％,摩尔分数,下同)对KNN陶瓷的晶体结构和电性能的影响,结果表明:x＜0.5％时,KNN陶瓷的相结构没有改变,仍为正交相...     

（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3无铅压电陶瓷,利用XRD、 SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。在室温下,当KSbO3的掺杂量为1％时,该体系表现出较好的介电性能：εr和tanδ分别为2231和0．055。     

K0.5Na0.5NbO3-LiSbO3-BiFeO3无铅压电陶瓷的烧结特性

采用传统无压固相烧结法制备0.996(0.95K0.5NbO3-0.05LiSbO3)-0.004BiFeO3[0.996(0.95KNN-0.05LS)-0.004BF]无铅压电陶瓷,着重研究烧结保温时间对陶瓷结构、压电性能与介电性能和Curie温度Tc的影响.结果表明:随着烧结保温时间的延长,陶瓷趋于形成更稳定的四...     

Low-Temperature Sintering of (K0.5Na0.5)NbO3 Piezoelectric Ceramics

(K_0.5Na_0.5)NbO₃ piezoelectric ceramics can be sintered at a temperature as low as 750 °C for 5 h by incorporating Li₂CO₃ + Bi₂O₃ + ZnO as the sintering aid, whereas the conventional sintering temperature is around 1,100 °C. The optimal “soft” piezoelectric properties are obtained for ceramics sintered at 850 °C for 5 h. The dielectric permittivity (ε), piezoelectric coefficient (d ₃₃), electromechanical coupling (k _p) and mechanical quality factors (Q _m) of (K, Na)NbO₃ modified with 5.5 wt% sintering aids are 1,436, 90 pC/N, 0.3 and 10, respectively. These values are similar to the values obtained for (K_0.5Na_0.5)NbO₃ ceramics sintered above 1,100 °C. The underlying mechanism for abrupt change of dielectric permittivity is explained.     

Piezoelectric K0.5Na0.5NbO3 Ceramics Textured Using Needlelike K0.5Na0.5NbO3 Templates

Improved performance by texturing has become attractive in the field of lead‐free ferroelectrics, but the effect depends heavily on the degree of texture, type of preferred orientation, and whether the material is a rotator or extender ferroelectric. Here, we report on successful texturing of K_0.5Na_0.5NbO₃ (KNN) ceramics by alignment of needlelike KNN templates in a matrix of KNN powder using tape casting. Homotemplated grain growth of the needles was confirmed during sintering, resulting in a high degree of texture parallel to the tape casting direction (TCD) and the aligned needles. The texture significantly improved the piezoelectric response parallel to the tape cast direction, corresponding to the direction of the strongest <001>_pc orientation, while the response normal to the tape cast plane was lower than for a nontextured KNN. In situ X‐ray diffraction during electric field application revealed that non‐180° domain reorientation was enhanced by an order of magnitude in the TCD, compared to the direction normal to the tape cast plane and in the nontextured ceramic. The effect of texture in KNN is discussed with respect to possible rotator ferroelectric properties of KNN.     

Dielectric and Piezoelectric Properties of (1−x)K0.5Bi0.5TiO3–xBa(Ti0.8Zr0.2)O3 Ceramics

The properties of relaxor ceramics in the compositional series (1?x)K_0.5Bi_0.5TiO₃–xBa(Ti_0.8Zr_0.2)O₃ have been investigated. Values of T_m, the temperature of maximum relative permittivity, decreased from 380°C at x = 0.0 to below room temperature for x > 0.7. Compositions x = 0.1 and 0.2 were piezoelectric and ferroelectric. The maximum value of d₃₃ piezoelectric charge coefficient, 130 pC/N, and strain, 0.14%, occurred at x = 0.1. Piezoelectric properties of x = 0.1 were retained after thermal cycling from room temperature to 220°C, consistent with results from high‐temperature X‐ray diffraction indicating a transition to single‐phase cubic at ~300°C.     

Thermally-stable large strain in Bi(Mn0.5Ti0.5)O3 modified 0.8Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3 ceramics

(1-x)[0.8Bi_0.5Na_0.5TiO₃-0.2Bi_0.5K_0.5TiO₃]-xBi(Mn_0.5Ti_0.5)O₃ (x = 0–0.06, BNKMT100x) lead-free ferroelectric ceramics were prepared via solid state reaction method. Bi(Mn_0.5Ti_0.5)O₃ induces a structure transition from rhombohedral-tetragonal morphotropic phases to pseudo-cubic phase. Moreover, the wide range of compositions within x = 0.03–0.055 exhibit large strain of 0.31%–0.41% and electrostrictive coefficient of 0.027–0.041 m⁴/C². Especially, at x = 0.04, the large strain and electrostrictive coefficient are nearly temperature-independent in the range of 25–100 °C. The impedance analysis shows the large strain and electrostrictive coefficient originate from polar nanoregions response due to the addition of Bi(Mn_0.5Ti_0.5)O₃.     

High recoverable energy storage density in (1-x)Bi0.5(Na0.8K0.2)0.5TiO3-xSrZrO3 thin films prepared by a sol-gel method

Lead-free (1-x)Bi_0.5(Na_0.8K_0.2)_0.5TiO₃-xSrZrO₃ (abbreviated as BNKT-100xSZ) thin films were deposited on Pt(111)/Ti/SiO₂/Si using sol-gel/spin coating method. With the addition of SZ, the long-range ferroelectric order dominant in BNKT is disrupted, which boosts the ferroelectric relaxor behavior. Consequently, a high recoverable energy density of 34.69?J/cm³ combined with an efficiency of 59.32% was achieved at the optimal composition of BNKT-15SZ under a high electric field of 2100?kV/cm, which can be ascribed to the slim P-E loops induced by strong relaxor behavior (γ?=?1.93) and the enhanced breakdown strength. Moreover, BNKT-15SZ thin film capacitor presents a good thermal stability with minimal variations of the energy density (<10%) and the energy storage efficiency (<5%) over a wide temperature range of 30–100?°C. The results indicated that the BNKT-100xSZ thin films may be a promising environmental-friendly material for energy storage applications.