Atomic oxygen generation by in-situ plasma and post-plasma in dielectric barrier discharges for surface treatment

Atomic oxygen (AO) generation is experimentally and numerically investigated for in-situ plasma and post-plasma produced by dielectric barrier discharges (DBDs) for surface treatment. The AO generation in in-situ plasma inside a DBD reactor is closely related to the plasma characteristics depending on the applied voltage and O₂ additive concentration, while the AO density distribution along the post-plasma ejected outside the reactor exit is influenced by the AO generation in the in-situ plasma, gas flow rate, and effluent distance. Contact angle measurements show that the metal surface characteristics, which are treated by in-situ plasma and post-plasma, respectively, are distinctive from each other depending on the AO densities.     

Film thickness dependence of microstructures and magnetic properties in single-layered FePt films by in-situ annealing

The FePt films with various thicknesses (t) of 5 to 50 nm are deposited on Si(100) substrate without any underlayer by in-situ annealing at substrate temperature (Ts) of 620 °C. A strong (001) texture of L1₀ FePt film is obtained and presents high perpendicular magnetic anisotropy as the film thickness increases to 30 nm. By further increasing the thickness to exceed 30 nm, the (111) orientation of L1₀ FePt is enhanced greatly, indicating that the quality of perpendicular magnetic anisotropy degrades when the thickness of the FePt film is greater than 30 nm. The single-layered FePt film with thickness of 30 nm by in-situ depositing at 620 °C shows good perpendicular magnetic properties (perpendicular coercivity of 1033 kA/m (13 kOe), saturation magnetization of 1.08 webers/m² and perpendicular squareness of 0.91, respectively), which reveal its significant potential for perpendicular magnetic recording media.     

The relationship between Ct and contour integrals under small-scale transient creep

In this paper, the relationship between the C_t and contour integrals for small-scale transient creep conditions is established, via elastic-creep finite element analysis. It is found that the C_t integral is similar to the contour integral value evaluated roughly at the creep zone size defined as the boundaries where time-dependent effective creep strains equal the instantaneous effective elastic strains and measured normal to the crack plane at the crack tip.     

Surface morphology and thickness of a multilayer film composed of strong and weak polyelectrolytes: Effect of the number of adsorbed layers, concentration and type of salts

Self-assembled multilayered films were prepared by alternate deposition of a strong cationic polyelectrolyte, poly(trimethylammonium ethyl methacrylate chloride) and a pH-dependant anionic polyelectrolyte, poly(acrylic acid). The layer-by-layer adsorption was followed in-situ by optical fixed-angle reflectometry and after drying by ellipsometry. A recently developed “substrate thickness method” was applied to calculate the adsorbed amount of polymer from the reflectometric signal. Surface film morphology was imaged before and after drying with atomic force microscopy (AFM). Influence of the number of adsorbed layers, concentration and type of salts on the multilayer growth was examined. The number of adsorbed layers produced a specific effect on the reflectometric signal which is linked to the refractive index of the film. Adjustment of the adsorbed amount of polyelectrolytes was done by changing sodium chloride salt concentration within a range of 10^− 3 to 10^− 1 M. AFM observations showed a significant evolution in surface morphology and a maximum of surface roughness for films built-up at 10^− 2 M. Experiments were then carried out at 10^− 3 M in either barium chloride or zinc chloride salts. In the presence of Ba²⁺ and Zn²⁺ ions, adsorption of 5 bilayers is completely modified and the surface morphology was smoother than the multilayers obtained using sodium chloride salt.     

Effect of the oxygen fraction on the structure and optical properties of HfOxNy thin films

The main purpose of this work was to prepare hafnium oxynitride (HfO_xN_y) thin films. HfO_xN_y thin films were deposited by radio frequency reactive magnetron sputtering from a pure Hf target onto Quartz and ZnS substrates at room temperature. The depositions were carried out under an oxygen-nitrogen-argon atmosphere by varying the flow rate of the reactive gases (oxygen/nitrogen ratio). The variation of the flow rate of the reactive gases changed the structure and properties of the films. Glancing incidence X-ray diffraction (GIXRD) was used to study the structural changes of as-deposited films; a new crystalline hafnium oxynitride phase was formed in a region of oxygen/nitrogen ratio. Cross-section of the films observed by SEM revealed that the films grew with a columnar-type structure, and surface observation with AFM showed values of surface roughness changed with the flow rate of the reactive gases, higher oxygen fraction had lower surface roughness than lower oxygen fraction. Visible spectra, infrared spectra, refractive index, absorption coefficient also changed with the variation of the oxygen fraction.     

Influence of oxygen/argon pressure ratio on the morphology, optical and electrical properties of ITO thin films deposited at room temperature

Transparent conductive oxides (TCOs) such as indium tin oxide (ITO) thin films onto glass substrates are widely used as transparent and conductive electrodes for a variety of technological applications including flat panel displays, solar cells, smart windows, touch screens, etc.ITO films on glass and polycarbonate (PC) substrates were prepared at room temperature (RT) and at different PO₂. The films were characterized in terms of the surface roughness (δ), sheet resistance, the refractive index (n) and extinction coefficient (k). The free carrier density (n_c) and the carrier mobility (μ) of the ITO (In₂O₃:Sn) films were measured and studied. The n_c and μ values vary in different ratio of oxygen partial pressure (PO₂) of ITO deposition. The observed changes in the ITO film resistivity are due to the combined effect of different parameter values for n_c and μ. From AFM analysis and spectra calculations, the surface roughness values of the ITO films were studied and it was observed that the δ values were lower than 15 nm. The energy band gap E_g ranges from 3.26 eV to 3.66 eV as determined from the absorption spectrum. It was observed an increase on the energy band gap as the PO₂ decrease in the range of 20-2% PO₂. The Lorentz oscillator classical model has also been used to fit the ellipsometric spectra in order to obtain both refractive index n and extinction coefficient κ values.     

Investigation of the tribological behavior and its relationship to the microstructure and mechanical properties of a-SiC:H films elaborated by low frequency plasma assisted chemical vapor deposition

Amorphous hydrogenated silicon carbide (a-SiC:H) coatings are promising candidates for tribological applications in the mechanical and aeronautical industries. Alternately high values of hardness H (15 < H < 32 GPa) and elastic modulus E contribute to their good wear resistance as well as to a low friction coefficient. The latter has been found to vary in the range 0.1 < μ < 0.65, depending upon the microstructure of the layers. The roughness of the films determined by atomic force microscopy is in all cases low (Ra ~ 5 nm). Comparisons between the tests carried out in air and those performed under vacuum conditions point to a substantial role of the adhesive part of the friction coefficient in vacuum. They also highlight the role played by the transfer layer between the film and the pin in producing a low friction coefficient for several coatings. This transfer layer consists chiefly of silicon and oxygen (O/Si ~ 2), whilst low quantities of carbon are also present.